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    DISCRETE THYRISTOR CHIP Search Results

    DISCRETE THYRISTOR CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D
    		Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L
    		Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W
    		Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D
    		Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D
    		Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    DISCRETE THYRISTOR CHIP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram PDF

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


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    thyristor lifetime

    Contextual Info: / Thyristor Diode Modules One of the essential advantages of power semiconductor modules compared to discrete designs is the electrical isolation between the baseplate of the module and the parts subject to voltage 3.6 kVRMS tested . This makes possible the mountdown of


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    thyristor lifetime

    Contextual Info: Thyristor / Diode Modules One of the essential advantages of power semiconductor modules compared to discrete designs is the electrical isolation between the baseplate of the module and the parts subject to voltage 3.6 kVRMS tested . This makes possible the mountdown of


    OCR Scan     		PDF

    thyristor lifetime

    Contextual Info: Thyristor / Diode Modules One of the essential advantages of power semiconductor modules compared to discrete designs is the electrical isolation between the baseplate of the module and the parts subject to voltage 3.6 kVRMS tested . This makes possible the mountdown of


    OCR Scan     		PDF

    Discrete Thyristor Chip

    Contextual Info: Thyristor / Diode Modules One of the essential advantages of pow er sem iconductor modules com pared to discrete designs is the electrical isolation between the baseplate of the m odule and the parts subject to voltage 3.6 kV HMS tested . This m akes possible the m ountdow n of


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    thyristor lifetime

    Abstract: all type of thyristor Discrete Thyristor Chip thyristor modules
    Contextual Info: Thyristor / Diode Modules One of the essential advantages of power sem iconductor modules com pared to discrete designs is the electrical isolation between the baseplate of the module and the parts subject to voltage 3.6 kVRUS tested . This makes possible the mountdown of any number of the same or diffe­


    OCR Scan     		PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    2N6070 MOTOROLA

    Abstract: 2N6070 2N6074 2N6069 2n6070 triac 2N6068 2N6072 triac 2n6073 triac 2N6070 2N6073 motorola
    Contextual Info: 3M MOTOROLA SC -CDIODES/OPTO} 6367255 M O T O R OL A SC DE|b3t ,7H SS 0030157 S D IO D E S /O P T O 34C 38157 T - Z fJ f - O ' SILICON THYRISTOR DIE (continued) 2C6075 CHIP NO. LINE SOURCE — DTL0401 Device assembled from this die type are similar to or


    OCR Scan     		DTL0401 2N6068 2N6069 2N6070 2N6071 2N6072 2N6073 2N6074 2N6075 2C6075 2N6070 MOTOROLA 2n6070 triac triac 2n6073 triac 2N6070 2N6073 motorola PDF

    AC15A

    Abstract: TRIAC FT 12 thyristor FT 12 2N5570 triac Motorola Discrete Thyristor Chip 2N5571
    Contextual Info: MOTOROLA SC i DIODES/O PTO ï 6367255 MOTOROLA SC 34 D E § b3t>7555 0030155 1 DIODES/OPTO 34C 38155 T * SILICON THYRISTOR DIE (continued) 2 s'-z'dr 2C5574 CHIP NO. LINE SOURCE — DTL0420 Device assembled from this die type are similar to or better than the following device types:


    OCR Scan     		DTL0420 2N5567 2N5568 2NSS69 2N5570 2N5571 2N5572 2N5573 2N5S74 2C5574 AC15A TRIAC FT 12 thyristor FT 12 triac Motorola Discrete Thyristor Chip PDF

    Triac 2N5444

    Abstract: MAC50 2N5446 triac Motorola
    Contextual Info: MOTOROLA SC Í DI ODES/OPTO} i 6 3 6 7 2 5 5 MOTOROLA SC "34 ÍF|t,3b7SSS DD3aiSW 7 |"~ DI ODES/ OPTO 34C 3 8 15 4 7^ 2- 5" - SILICON THYRISTOR DIE (continued) / 7 2C5446 CHIP NO. UNE SOURCE — DTL0440 Device assembled from this die type are similar to or


    OCR Scan     		DTL0440 2N5441 2N5442 2N5443 2N5444 2N5445 2N5446 MAC50, 2C5446 Triac 2N5444 MAC50 triac Motorola PDF

    TRIAC FT 12

    Abstract: triac Motorola
    Contextual Info: MOTOROLA SC 34 -CDIODES/OPTOJ 6367255 MOTOROLA SC DeT J b3t,725S GD3fllb2 L> < D I O D E S/ O PT O 34C 38162 zr-'/îT D SILICON THYRISTOR DIE continued) MACC222A-10 SERIES chip no. LINE SOURCE — DTL0410 Device assembled from this die type are similar to or


    OCR Scan     		DTL0410 MACC222A-10 MAC222 TRIAC FT 12 triac Motorola PDF

    BYX38-600

    Abstract: germanium rectifier diode byx38 diode germanium varactor diode BYX38
    Contextual Info: TYPE DESIGNATION J^ PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits — , multiples of such devices and semiconductor chips. "Although not all type numbers accord with the Pro Electron system, the following explanation is given


    OCR Scan     		BYX38-600 BZY93-C7V5 BYX38 BZY93 germanium rectifier diode byx38 diode germanium varactor diode PDF

    rca thyristor manual

    Abstract: diode lt 341 1W1000 RG35A "RCA Solid State thyristor
    Contextual Info: B3612 PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC D ECEM BER 1995 - B 6V IS6 0 SfiPfeM HEFI 1897 Copyright 1997. Power Innovations Limited. UK OVERVOLTAGE PROTECTION FOR ERICSSON COMPONENTS LINE INTERFACE CIRCUITS • PBA 3357/3 DCLIC Overvoltage Protector


    OCR Scan     		B3612 RLM88 T-001089 R3612 TCM1060 R3612 1W1000 rca thyristor manual diode lt 341 RG35A "RCA Solid State thyristor PDF

    rca thyristor manual

    Abstract: PBA transistor "RCA Solid State thyristor ic k1 RCA Solid state Linear Integrated Circuits 1970s SGT10S10 BELLCORE tr-nwt-001089 I3124 DIODE D5 R3612
    Contextual Info: R3612 PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC Copyright 1997, Power Innovations Limited, UK DECEMBER 1995 - REVISED SEPTEMBER 1997 OVERVOLTAGE PROTECTION FOR ERICSSON COMPONENTS LINE INTERFACE CIRCUITS ● PBA 3357/3 DCLIC Overvoltage Protector


    Original     		R3612 rca thyristor manual PBA transistor "RCA Solid State thyristor ic k1 RCA Solid state Linear Integrated Circuits 1970s SGT10S10 BELLCORE tr-nwt-001089 I3124 DIODE D5 R3612 PDF

    WESTINGHOUSE scr

    Abstract: Westinghouse thyristor POW-R-BRIK WESTINGHOUSE scr fast dc to ac inverter by scr
    Contextual Info: Power Semiconductor Solutions EXPERTISE INNOVATION RELIABILITY Powerex Quick Reference Guide Assemblies Air Cooled / Liquid Cooled / Integrated Power Structures POWER SEMICONDUCTOR SOLUTIONS Applications Include: • Battery Chargers  Induction Heating/Melting


    Original     		202/3K/Pub. WESTINGHOUSE scr Westinghouse thyristor POW-R-BRIK WESTINGHOUSE scr fast dc to ac inverter by scr PDF

    single phase thyristor controller ic

    Abstract: 2 x 20w amplifier Peak and Hold PWM MOSFET Predriver sc70-5 mosfet driver 2N7002-SOT23 NCP1652 NCS2560 dpdt array circuit mosfet ac switch UDFN-8
    Contextual Info: The information contained in this Quarterly Update represents ON Semiconductor’s current and planned new products. For additional information regarding any of these products, please visit our website at www.onsemi.com. Operational Amplifiers/Comparators


    Original     		NCS2001A NCS2530A NCS2560 NCS2561 NCS2561A NCS2563 SOIC-14 SC88-6 SOI75 SGD503-29 single phase thyristor controller ic 2 x 20w amplifier Peak and Hold PWM MOSFET Predriver sc70-5 mosfet driver 2N7002-SOT23 NCP1652 NCS2560 dpdt array circuit mosfet ac switch UDFN-8 PDF

    SIEMENS THYRISTOR

    Abstract: TEMPFET SIEMENS THYRISTOR thy pwm thyristor thyristor control ic with current sense Discrete Thyristor Chip siemens thy mosfet controlled thyristor SIEMENS FAST THYRISTOR 6 thyristor driver circuit
    Contextual Info: Speed TEMPFET HL Application Note Temperature sense concept – Speed Tempfet® Principle of the temperature sense concept of the Speed-TEMPFET family Benno Köppl Introduction The well-known classic TEMPFET products from Siemens are a cost-effective solution for


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    P-Channel Depletion Mode FET

    Abstract: 5155 transistor Depletion MOSFET 20V HV Diode breadboard 400 dc voltage regulator using thyristor P-Channel mosfet 400v 0.5A
    Contextual Info: USH5155; USH5156 ISOPOWER HIGH VOLTAGE Universal Semiconductor FEATURES • • • • • • 500V Devices Dielectrically isolated Silicon gate CMOS/DMOS technology Freedom from latch-up Ultra Low leakage Rad-Hard devices DESCRIPTION The USH5155 and USH5156 are high voltage Kit Parts de­


    OCR Scan     		USH5155; USH5156 USH5155 USH5156 P-Channel Depletion Mode FET 5155 transistor Depletion MOSFET 20V HV Diode breadboard 400 dc voltage regulator using thyristor P-Channel mosfet 400v 0.5A PDF

    IXYS CORPORATION

    Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
    Contextual Info: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS


    Original     		DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ PDF

    SKIIP 32 nab 12 t 49

    Abstract: SKiiP 33 NEC 125 To skiip 33 ups 063 semikron skiip 24 nab 125 t 12 thyristor firing circuit SEMIKRON SKIIP 20 NAB 12 T 17 semikron skiip 20 nab 12 I T 38 Semikron skiip 31 nab 12 semikron skiip 81 AN 15 T semikron skiip 32 nab 12
    Contextual Info: MiniSKiiP Do it your way MiniSKiiP Technology • Pressure contact of all power and auxiliary connections instead of soldered joints. ■ Integration of latest chip technology: • Low switching loss, 600V or 1200V, homogeneous NPT IGBTs with antiparallel


    Original     		D-90253 SKIIP 32 nab 12 t 49 SKiiP 33 NEC 125 To skiip 33 ups 063 semikron skiip 24 nab 125 t 12 thyristor firing circuit SEMIKRON SKIIP 20 NAB 12 T 17 semikron skiip 20 nab 12 I T 38 Semikron skiip 31 nab 12 semikron skiip 81 AN 15 T semikron skiip 32 nab 12 PDF

    all type of thyristor

    Abstract: mosfet power class d Discrete Thyristor Chip 1200 A thyristor 6912 mosfet rectifier diode thyristor phase control chip ixys thyristor thyristor 60 A IXYS CDWEP
    Contextual Info: Symbols and Definitions Cies Ciss -di/dt IC ID IF IF AV M IFSM IGT IR IRM IT IT(AV)M ITSM RDS(on) Rthjc rT Tcase Th tfi Tj, T(vj) Tjm, T(vj)m trr VCE(sat) VCES VDRM VDSS VF VR VRRM VT VT0 Input capacitance of IGBT Input capacitance of MOSFET Rate of decrease of forward current


    Original     		TS2/765/17557 D-68623 all type of thyristor mosfet power class d Discrete Thyristor Chip 1200 A thyristor 6912 mosfet rectifier diode thyristor phase control chip ixys thyristor thyristor 60 A IXYS CDWEP PDF