DIP28PIN Search Results

tip off 0401 transistor using circuit free energy

Abstract: ghr 87 diode transistor 5-2736 E0C63158 E0C63256 E0C63358 S1C05251 AC 121 V TPI 121
Contextual Info: MF1329-02 CMOS CALLING NUMBER IDENTIFICATION RECEIVER IC S1C05251 Technical Manual S1C05251 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

DIP28

Abstract: LC33832M LC33832P LC33832S
Contextual Info: Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K 32768 words x 8 bits Pseudo-SRAM Overview Package Dimensions The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory

Contextual Info: ROHM CO LT D 4oe d m T a e a 'm ooom a? I C / M e m o r y ICs s b irh h BR2865A 'T-4L-/3-2~ 7 8K X 8 fcf-y K 5V EEPROM 8K X 8 Bit 5V EEPROM •W fi^ ife E l/D im e n s io n s U n it: mm BR2865A ( i, 8192 X 8 M "j (EEPROM) T 'f « U, Betti y ? RAM tmmzti k?

78L033

Abstract: DB15 pcb connector female H11A 3.3v adapter db15 female to usb 78l03 H11A PDIUSBH11A VGA DB15 DB15 vga connector PDIUSBD11
Contextual Info: Philips Semiconductors Networking August 15, 2000 Philips H11A/D11 Evaluation Board User’s Manual Philips Semiconductors - Asia Product Innovation Centre Visit http://www.flexiusb.com

UPD444C

Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Contextual Info: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238

SRM2564M

Abstract: SRM25
Contextual Info: SRM2564 CMOS 64K-BIT STATIC RAM • Low Voltage and Low Supply Current • Access Time 1,000ns • 8,192 Words x 8-Bit Asynchronous • DESCRIPTION The SRM2564 is an 8,192 words x 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with

SED2000FVB

Abstract: SED2800FVA seiko 64 s chip DIP-28pin SED2000F0A SED2800F DIP28pin SED2000F0 SED2000F SED2032F0B
Contextual Info: Other Drivers • High-voltage drivers Part number Supply voltage Output withstand Output current Clock frequency range voltage mA-typ. (MHz) (V) (V-max.) grid : 20 anode : 2 SED2000FVB Outputs Description grid : 20 anode : 40 SED2020F0A QFP5-80pin QFP1-46pin

BU8326

Abstract: BA4116 BA8215 A8206 single line telephone hybrid DIP18 BA1604
Contextual Info: ICs for Industrial Equipment Information/Communication Phones S p e a k e r, S p e a ke r / Telep ione line ECM Piezoetectric buzza Piezoelectric speaker Piezoelectric mie Block Diagram of Typical Applications — (qV ' Cross point mixer B U 8241(8X 8) B U 8242(6X 6)

BA6805A

Abstract: VU meter circuit
Contextual Info: BA6800A/BA6800AF/BA6805A BA6800A BA6800AF BA6805A 1 6 /£ FLffl VU K 7 fM 16-Point Fluorescent Display Tube VU Scale Peak Hold Level Meter • W fé -tfj& 0 /'D im e n s io n s U n it:iT iin BA6800A/BA6800AF/BA6805A l i , Ig liC fr jSLlC <t % 1 6 & X 2 c h *^ < 7 > F L < £ fflV U @

SRM2264LM10

Contextual Info: SRM2264L10/12 CMOS 64K-BIT STATIC RAM • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8 Bits, Asynchronous • DESCRIPTION The SRM2264L10/12 is an 8,192-word x 8-bit asynchronous, static, random access m em ory on a m onolithic CM OS chip. Its very low standby power requirem ent makes it ideal for applications requir­

ic L70B

Abstract: SRM2B257SLC70 T70B
Contextual Info: EPSON PF859-01 S R M 2B 257S L C 70/10 256K-Bit Static RAM • • • • Low Supply Current Access Time 100/120ns 32,768 W ordsX 8-bit Asynchronous Two Chip Select Term inals I DESCRIPTION The SRM2B257SLC70/10 is a 32,768 wordX8-bit asynchronous, static, random access memory fabricated using

SOP48

Abstract: CF RM sot89 SOP38 14X14X2 epson QFP 216 14X14X1 45x45 mm bga 14X20X2 14x14x2.7 QFP13
Contextual Info: Plastic QFP Pin Count 44 46 48 52 60 64 80 100 120 128 144 160 176 184 208 216 232 240 256 304 Package code QFP 13 QFP4 QFP2 QFP6 QFP5 QFP12 QFP5 QFP6 QFP2 QFP6 QFP5 QFP13 QFP15 QFP6 QFP5 Plastic TQFP Body size mm 10X10X1.4 10X10X1.45 14X14X2 14X14X2.7 14X20X2.7

BA7700

Abstract: BP3002 ba7703 BP50M05 51L05
Contextual Info: noHm Standard Hybrid ICs #For Telephone Units BP3000 Series Function Part No. B P 3002 Japan model BP3003 North America model BP3004 Japan model BP3005 North America model BP3008 Japan model BP3009 North America model Package R edial,pause,piezoelectric ringer and

SED2000F

Abstract: SED2020F SED5620D SED2000FVB SED2800F SED2800FVA sed2032f
Contextual Info: ASSPs -4 O t h e r D r iv e rs Other Drivers iHigh-voltage drivers Pa rt n u m b e r Supply voltage range V Output withstand O u tp u t current Clock frequency voitage (MHz) (m A-typ.) (V-m ax.) O u tp u ts grid : 20 anode : 2 grid : 20 anode : 40 VFD anode/grid driver

SRM2B256SLMT10

Abstract: SRM2B256SLRMT SRM2B256SLMT SRM2B256SLMT55 SRM2B256SLMT70 SRM2B256SLTMT
Contextual Info: PF857-02 SRM2B256SLMT55/70/10 256K-Bit Static RAM ge lta o V n de tio Wi pera cts O odu Pr ● Wide Temperature Range ● Extremely Low Standby Current ● Access Time 100ns 2.7V /55ns s (4.5V) ● 32,768 Words x 8-bit Asynchronous • DESCRIPTION The SRM2B256SLMT is a low voltage operating 32,768 words✕8-bit asynchronous, static, random access

SRM2B257SLC10

Abstract: SRM2B257SLC70 DIP28pin SRM2B257SLM70 PF859-02
Contextual Info: PF859-02 SRM2B257SLC70/10 256K-Bit Static RAM ● Low Supply Current ● Access Time 100/120ns ● 32,768 Words✕8-bit Asynchronous ● Two Chip Select Terminals • DESCRIPTION The SRM2B257SLC70/10 is a 32,768 word✕8-bit asynchronous, static, random access memory fabricated using

DIP-48-PIN

Abstract: BP3303
Contextual Info: ROHM CO LTD 7650^ MOE D 0003273 4 E R H M •-V* ia tË iû ^ a iâ S â lM l T É lft ì I • Package List Appearance Lead specs, mm Single in-line (SIP) £=4±f p s W1 W2 Board wfdBì (iron) 10 Min. I 90 Max. 7 Min. I 38 Max. 15 Min. f 90 Max. 18 Min.

SRM2264LCT

Abstract: 2264L SRM2264
Contextual Info: SRM2264L,m CMOS 64K-BIT STATIC RAM • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8-Bit Asynchronous DESCRIPTION The SRM2264Lio/i2 is an 8,192 wordsx 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with

2b256

Contextual Info: EPSON PF857-02 SRM2B256SLMT55/70/10 256K-Bit Static RAM • • • • Wide Temperature Range Extremely Low Standby Current Access Time 100ns 2.7V /55ns (4.5V) 32,768 Words x 8-bit Asynchronous I DESCRIPTION The SRM 2B256SLM T is a low voltage operating 32,768 w ordsX 8-bit asynchronous, static, random access

upd444c

Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
Contextual Info: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238

S1C05251

Abstract: V23 FSK Japan DTMF fsk cli circuit BELLCORE FSK BELL202 GR-30-CORE S1C05250 SIN227
Contextual Info: PF1243-01 S1C05251 CAS + FSK IC ge oltan V o Lowerati ts p c u O od Pr ● ITU V.23 & Bell 202 FSK Receiver ● Bellcore "CPE Alerting Signal" Detection ● BT "Idle Tone Alert Signal" Detection ● Low Voltage Operation • DESCRIPTION The S1C05251 CAS + FSK IC , an upgraded version of the S1C05250, is a CMOS IC for calling number

Contextual Info: Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 'SAiiYOl 256 K 32768 words x 8 bits Pseudo-SRAM Overview The LC33832 series is composed of pseudo static RAM that operates on a single 5 V pow er supply and is organized as 32768 words x 8 bits. By using memory

SRM20257

Abstract: SRM20257LM10
Contextual Info: SRM20257Lio/i2 CMOS 256K-BIT STATIC RAM • • • • Low Supply Current Access Time 100ns/120ns 32,768 Words x 8-Bit Asynchronous Two Chip Select Terminals DESCRIPTION The SRM20257Lio/i2 is a 32,768 word x 8-bit asynchronous, static, random access memory fabricated using

SRM2264lm10

Abstract: SRM2264L10 SRM2264L DIP-28 SRM2264L12
Contextual Info: SRM2264L10/12 CMOS 64K-BIT STATIC RAM ● Low Supply Current ● Access Time 100ns/120ns ● 8,192 Words x 8 Bits, Asynchronous • DESCRIPTION The SRM2264L10/12 is an 8,192-word × 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with back-up batteries. The asynchronous and static nature of the memory