BYW51-200
Abstract: BYW51F-200 BYW51FP-200 BYW51G-200
Text: BYW51/F/G/FP-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 K FEATURES AND BENEFITS n n n n n A2 SUITED FOR SMPS
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BYW51/F/G/FP-200
ISOWATT220AB
O-220FP)
DO-220FP
BYW51FP-200
BYW51G-200
O-220AB,
ISOWATT220AB,
O-220FPhts
BYW51-200
BYW51F-200
BYW51FP-200
BYW51G-200
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BYW51-200
Abstract: BYW51F-200 BYW51G-200
Text: BYW51/F/G-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAJOR PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 K A2 A1 FEATURES AND BENEFITS D2PAK SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES
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BYW51/F/G-200
ISOWATT220AB)
BYW51G-200
O220AB,
ISOWATT220AB
BYW51-200
BYW51F-200
BYW51G-200
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ISOWATT-220
Abstract: No abstract text available
Text: BYW51/F/G-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 K A2 A1 FEATURES AND BENEFITS D2PAK SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES
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BYW51/F/G-200
ISOWATT220AB)
BYW51G-200
O-220AB,
ISOWATT220AB
ISOWATT-220
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BYW51-200
Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
Text: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES
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BYW51/F/G/FP/R-200
O-220FPAB
BYW51FP-200
ISOWATT220AB
O-220FP)
O-220AB
BYW51-200
BYW51G-200
O-220AB,
BYW51-200
BYW51F-200
BYW51FP-200
BYW51G-200
BYW51R-200
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BYW51-200
Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200 TO220-FPAB diode 57
Text: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES
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BYW51/F/G/FP/R-200
O-220FPAB
BYW51FP-200
ISOWATT220AB
O-220FP)
BYW51G-200
O-220AB
BYW51-200
BYW51-200
BYW51F-200
BYW51FP-200
BYW51G-200
BYW51R-200
TO220-FPAB
diode 57
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BYW51-200
Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
Text: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES
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BYW51/F/G/FP/R-200
O-220FPAB
BYW51FP-200
ISOWATT220AB
O-220FP)
O-220AB
BYW51-200
BYW51G-200
O-220AB,
ISOWATT22cs.
BYW51-200
BYW51F-200
BYW51FP-200
BYW51G-200
BYW51R-200
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byw51fp200
Abstract: BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
Text: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES
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BYW51/F/G/FP/R-200
O-220FPAB
BYW51FP-200
ISOWATT220AB
O-220FP)
O-220AB
BYW51-200
BYW51G-200
O-220AB,
byw51fp200
BYW51-200
BYW51F-200
BYW51FP-200
BYW51G-200
BYW51R-200
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BYW51-200
Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
Text: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V A1 K trr (max) A2 A2 K A1 25 ns TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES
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BYW51/F/G/FP/R-200
O-220FPAB
BYW51FP-200
ISOWATT220AB
O-220FP)
O-220AB
BYW51-200
BYW51G-200
O-220AB,
BYW51-200
BYW51F-200
BYW51FP-200
BYW51G-200
BYW51R-200
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LD chip
Abstract: LLD1013E01
Text: CW LASER DIODES L9418 100 Relative Radiant Output Power % Radiant Output Power Φe (W) ( Top(c) = 25 °C ) ( Top(c) = 25 °C ) 1.5 1.0 0.5 0.5 Peak Emission Wavelength 980nm, Radiant Output Power 1W (CW) 60 FEATURES 40 Radiant output power (CW) : 1W Peak Emission Wavelength : 980 nm ± 3 nm
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L9418
980nm,
L9418
SE-171-41
LLD1013E01
LD chip
LLD1013E01
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L9390
Abstract: valve & pump control D1062 JESD97 TQFP100
Text: L9390 Twelve channel valve driver Data Brief Features • Four low side switched output drivers with 0.1Ω Rds,ON at 25°C Possibly configurable as PWM controlled adding external freewheeling diodes ■ Two low side PWM controlled output drivers with 0.1Ω Rds,ON at 25°C and integrated active
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L9390
TQFP100
800mA)
L9390
valve & pump control
D1062
JESD97
TQFP100
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Untitled
Abstract: No abstract text available
Text: L9390 Twelve channel valve driver Data Brief Features • Four low side switched output drivers with 0.1Ω Rds,ON at 25°C Possibly configurable as PWM controlled adding external freewheeling diodes ■ Two low side PWM controlled output drivers with 0.1Ω Rds,ON at 25°C and integrated active
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L9390
800mA)
TQFP100
L9390
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600 um laser fiber medical
Abstract: L929 Peltier element L9399 836 DIODE LLD1012E01 836 DIODE current "Peltier element" AL7 1BW CW Laser
Text: FIBER-OUTPUT CW LASER DIODES L9399 Figure 1: Radiant Output Power vs. Forward Current Typ. 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 ( Top(c) = 20 °C ) 100 Relative Radiant Output Power (%) Radiant Output Power Φe (W) Figure 2: Emission Spectrum (Typ.)
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L9399
L9399
600 um laser fiber medical
L929
Peltier element
836 DIODE
LLD1012E01
836 DIODE current
"Peltier element"
AL7 1BW
CW Laser
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Untitled
Abstract: No abstract text available
Text: L9390 Twelve channel valve driver Data Brief Features • Four low side switched output drivers with 0.1 Rds,ON at 25°C Possibly configurable as PWM controlled adding external freewheeling diodes ■ Two low side PWM controlled output drivers with 0.1 Rds,ON at 25°C and integrated active
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L9390
TQFP100
800mA)
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zener diode marking E7
Abstract: diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Typ e Device Typ e Device m arking Device m arking BA L99 E2 B Z X 84-C 4 3 X6 B A R 99 E3 B Z X 84-C 47 X7 B A S 16 A3 FM M D 914 5D B A V 70 A4 FM M D 6050 5A B A V 74
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OT-23
BAL99
BZX84-C43
BAR99
BZX84-C47
BAS16
FMMD914
BAV70
FMMD6050
BAV74
zener diode marking E7
diode marking w8
marking J7 diode
diode marking e8
marking W6 diode
diode marking x6
FMMD6050
FMMD914
diode MARKING c9
BAR99
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ml976h6f
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML9XX6 SERIES InGaAsP— MQW— FP LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X6 series are InG aA sP laser diodes w hich provides a s ta b le , s in g le w avele ngth of tra n s v e rs e 1550nm m ode o s c illa tio n and standard
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1550nm
ML976H6F
ML920B6S
ml976h6f
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML9XX6 SERIES InGaAsP — MQW— FP LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X6 series are InG aA sP laser diodes w hich provides a s ta b le , s in g le tra n s v e rs e w avele ngth of 1550nm m ode o s c illa tio n and standard
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1550nm
ML976H6F
ML920B6S
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Untitled
Abstract: No abstract text available
Text: M ITSU BISH I LASER DIODES ML9XX11,ML9XX16,ML9XX22 SERIES InGaAsP DEB LASER DIODES TYPE NAME DESCRIPTION APPLICATION M L9XX11,M L9XX 16 and M L9XX22 series are DFB Distributed Feedback laser diodes emitting light beam with • . . emission wave length o f 1470 ~ 161 Onm.
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ML9XX11
ML9XX16
ML9XX22
L9XX11
L9XX22
speed1533
ML925B22F-04
ML925B22F-05
L925B22F-06
925B11F-05
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML9XX6 SERIES In G aA sP — M QW — F P L A S E R DIODES TYPE N AM E DESCRIPTION FEATURES M L9XX 6 series are InG aAsP laser diodes which provides a stable, sin gle transverse mode o scilla tio n with e m ission wavelength of 1550nm and standard continuous light Output
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1550nm
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40h50
Abstract: laser diodes 300 mW H Beam ML976H10 ML9XX10 Laser diodes
Text: MITSUBISHI LASER DIODES ML9XX10 SERIES InGaAsP— MQW HIGH POWER LASER DIODES TYPE NAME DESCRIPTION M L9XX10 w hich s e rie s provides w ith em ission FEATURES are InG aA sP a stable, single h igh power tra nsverse w avelength o f 1550nm la s e r m ode and pulse
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ML9XX10
1550nm
200mW.
200mW)
l550nm
ML976H10
700mA
40h50
laser diodes 300 mW
H Beam
ML976H10
Laser diodes
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML9XX10 SERIES InGaAsP— MQW HIGH POWER LASER DIODES TYPE NAME DESCRIPTION M L9XX10 w hich w ith s e rie s provides FEATURES are In G a A sP a stable, single high power tra nsverse em ission w avelength o f 1550nm la s e r m ode and pulse
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ML9XX10
L9XX10
1550nm
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ML961B8S
Abstract: S-25 1480 nm diode laser H Beam photodiode 1490 nm
Text: MITSUBISHI LASER DIODES ML9XX8 SERIES InG aA sP-M Q W HIGH POWER LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X8 serie s are InG aA sP high po w e r laser dio d e s w hich p ro vid e s a sta b le , single em is s io n w a v e le n g th of tra n s v e rs e
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1480nm
150mW.
150mW)
l480nm
ML961B8S
100mW
100rr
ML961B8S
S-25
1480 nm diode laser
H Beam
photodiode 1490 nm
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ITT TCA 700 Y
Abstract: TCA 700 Y
Text: TCA1561 B TCA1560 B Stepper M otor Drivers Preliminary Data Bipolar IC Type Ordering Code Package TCA 1 5 6 1 B TCA 1 5 6 0 B Q 67000-A 8209 Q 67000-A 8208 P-SIP-9 P-DIP-18-L9 The TCA 1561 B is a bipolar m onolithic IC designed to control the m otor current in one
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TCA1561
TCA1560
7000-A
P-DIP-18-L9
ITT TCA 700 Y
TCA 700 Y
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L9836
Abstract: L9839 L9827 L9B47 L9813 L98200 L9B15 L9H5.4 L9B10 L9 Zener
Text: L9 Series 1.5 KW Voltage Limiting Diodes A range of medium power zener and avalanche surge suppressor diodes available in a hermetically sealed D01 package in both unipolar and bipolar configurations. - 5KW; 1mS ^ surge- - - —
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L9B10C
10-12S
5x10-9S
L9836
L9839
L9827
L9B47
L9813
L98200
L9B15
L9H5.4
L9B10
L9 Zener
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L9922
Abstract: No abstract text available
Text: blE D • DDmb7T T7fl I M IT S MITSUBISHI LASER DIODES ML9XX2 SERIES MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION FEATURES M L9 X X 2 is a DFB (D is trib u te d Feedback) laser diode • L o w th re sh o ld c u rre n t ty p ic a l 2 0 m A
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1550nm
L9922,
L9922
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