Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 20V~100V / 1.0A WSSCD102SH THRU WSSCD110SH FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, High efficiency
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WSSCD102SH
WSSCD110SH
1206-S
WSSCD106SH
104SH
50mVP-P
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Untitled
Abstract: No abstract text available
Text: SKN 135F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode OB$; OBB; O WSS <SSS O WSS <SSS CPB;$ Q =RS G L%&T4%9% ,&'9 0+ *+81489+95 +F)(&14+8N CPGO Q <UV G L548H <WSA <SSS 3XA :* Q <SS YIN $>? <UVPSW $>B <UVPSW $>? <UVP<S $>B <UVP<S <=SS <=SS $>? <UVP<= Symbol Conditions
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L548H
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Untitled
Abstract: No abstract text available
Text: SKN 136F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode OB$; OBB; O WSS <SSS O WSS <SSS CPB;$ Q =RS G L%&T4%9% ,&'9 0+ *+81489+95 +F)(&14+8N CPGO Q <UV G L548H <WSA <SSS 3XA :* Q <SS YIN $>? <URPSW $>B <URPSW $>? <URP<S $>B <URP<S <=SS <=SS $>? <URP<= Symbol Conditions
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L548H
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FM6L5202
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FM6L5202 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview Package FM6L5202 is N-channel type MOS FET with Schottky Brrier Diode in small
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FM6L5202
FM6L5202
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FL6L5203
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5203 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Overview Package FL6L5203 is P-channel type MOS FET with Schottky Brrier Diode in small
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FL6L5203
FL6L5203
FL6L52030L
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kl 04 diode
Abstract: No abstract text available
Text: SK 15 DGDL 126 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper O$PQ B$ B$UV OCPQ @-J KLM$N 407,- %*8,23.-, -', .6.,+ @- J KL <TS? M$ B$UVJ K ; B$0%&N *' J R &- @Y Diode - Inverter, Chopper SEMITOP 3 3-phase bridge rectifier +
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86628 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package Overview Features Built-in schottky barrier diode: VR = 15 V, IF = 700 mA
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MTM86628
MTM86628
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Untitled
Abstract: No abstract text available
Text: SK 10 DGDL 126 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper O$PQ B$ B$UV OCPQ @-J KLM$N 407,- %*8,23.-, -', .6.,+ @- J KL <TS? M$ B$UVJ K ; B$0%&N *' J R &- @Y Diode - Inverter, Chopper SEMITOP 3 3-phase bridge rectifier +
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
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lg crt monitor circuit diagram
Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJGV0SG00
lg crt monitor circuit diagram
micro servo 9g
samsung lcd tv power supply diagrams
MP 1008 es
uPa2003
8049 microcontroller APPLICATION
LG lcd tv tuner
pioneer car dvd service manual
lg washing machine circuit diagram
8ch pnp DARLINGTON TRANSISTOR ARRAY
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Untitled
Abstract: No abstract text available
Text: Emphasizing efficiency while contributing to end product miniaturization MTM86XXX Power Management MOSFET Series Overview These devices are power management MOSFETs that are optimal for mobile equipment such as cell phones and that adopt the newlydeveloped WSSMini6-F1 ultraminiature package 1.6 x 1.6 mm .
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MTM86XXX
MTM86127
MTM86727
MTM86627
M00735EE
MTM86227
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MTM86628
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86628 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package Code WSSMini6-F1 Pin Name 1: Gate
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MTM86628
MTM86628
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MTM86627
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package Code WSSMini6-F1 Pin Name 1: Gate
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MTM86627
MTM86627
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MTM86227
Abstract: MTM86727 IR CLASS D Applications mosfet power class d sbd diode S mosfet class d MTM86927
Text: Emphasizing efficiency while contributing to end product miniaturization MTM86XXX Power Management MOSFET Series Overview These devices are power management MOSFETs that are optimal for mobile equipment such as cell phones and that adopt the newlydeveloped WSSMini6-F1 ultraminiature package 1.6 x 1.6 mm .
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MTM86XXX
MTM86927
IF700mA
MTM86727
MTM86927
IF800mA
M00735CE
MTM86727
MTM86227
MTM86227
IR CLASS D Applications
mosfet power class d
sbd diode S
mosfet class d
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W1A 73
Abstract: Diode LT 410 ic tms 1000 81 210 W 20 w1A 49 W1A 95 dt61n dt250n
Text: Thyristor-Dioden-Module für l-Umrichter Thyristor-diode-modules for current source inverters Modules thyristor-diode pour convertisseurs à circuit intermédiaire à courant continu Typ Type V drm It r m s m Itsm / ¡ 2d t Itavm /I c V TO Tt ( d i/ d t ) cr
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asi/73
W1A 73
Diode LT 410
ic tms 1000
81 210 W 20
w1A 49
W1A 95
dt61n
dt250n
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 11DQ05 11DQ06 1.1A/50— 60V FEATURES “ Miniature Size ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available ° 52mm Inside Tape Spacing Package Available
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A/50--
11DQ05
11DQ06
11DQK
ui10n
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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"Darlington Transistor"
Abstract: No abstract text available
Text: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode a t E-C Lead Formed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1" Suffix)
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MJD122
"Darlington Transistor"
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3n214
Abstract: 3n215 3N217
Text: TYPES 3N 2U THRU 3N217 N-CHANNEL DEPLETION-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 7 3 1 1 9 9 1 . M A R C H 1 9 7 3 DIODE-PROTECTED DEPLETION-TYPE MOS SILICON TRANSISTORS For Low-Power Chopper or Switching Applications •
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3N217
3IM214)
3n214
3n215
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C67078-A1103-A2
Abstract: V103 DIN 41872 kbs 005
Text: s a t D • 823ShO S 1 001413b sao 14936 O H S IE 6 BUZao r-s y -1 3 SIEMENS A K TI EN GE SE LL SCH AF Main ratings N-Channel Draln-source voltage Voa Continuous drain current Draln-source on-reslstance ^DS Ofl Description Case 800 V 6.5 A 1.5 í l FREDET with fast-recovery reverse diode, N-channel, enhancement mode
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2f-13
C67078-A1103-A2
fl235bQ5
C67078-A1103-A2
V103
DIN 41872
kbs 005
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Untitled
Abstract: No abstract text available
Text: E S A C 8 2 M - 0 4 1 0 A * ± 'h * a * - r 3 i— K ^ 3 ‘y h + — ^ x Y 7 ¥ ^ ^ t —K : Outline Drawings SCHOTTKY BARRIER DIODE : Features In su la ted packa g e by fu lly m o ld in g • “(SVf Low V F • • x -r n m Connection Diagram x e - F * * # * ta v .'
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16MQ40
Abstract: ajw 35
Text: SCHOTTKY BARRIER DIODE 16MQ30 16MQ40 16.6A/30— 40V FEATU RES ° H e r m e t i c a l l y S e a l e d C ase ° High Reliability Device ' L o w F o r w a r d P o w e r Loss, High Efficiency » High Surge Capability ° 30 V o l t s t h r o u g h 60 V o l t s T y p e s A v a i l a b l e
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A/30--
16MQ30
16MQ40
16MQ30
16MQ40
ajw 35
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