DIODE WP Search Results

"laser diode Driver Circuit"

Abstract: SFP Laser Driver
Contextual Info: Signal Conditioning/Calibration and Control Products X9530 Temperature Compensated Laser Diode Controller Description • SONET and SDH Transmission System Laser Diode Bias Control • 1G and 10G Ethernet, and Fibre Channel Laser Diode Driver Circuits The X9530 is a highly integrated laser diode bias controller

7493 counter

Abstract: X9312 X9C102 X9C103 X9110 X9258 X9259 X9520 X9521 X9522 X9523
Contextual Info: X9520 Laser Diode Control for Fibre Channel & Gigabit Ethernet RH0 Wiper Counter Register RW0 RL0 8 WP Applications 8-Bit Nonvolatile Memory Protect Logic Data Register SDA RH1 Constat Register Wiper Counter Register 4 Command Decode & Control Logic • Laser Diode Modules

Contextual Info: HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet Description Features The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. • Low Junction Capacitance • fc >200 GHz • Lower Temperature

TC611 Diode Model

Abstract: AGILENT TECHNOLOGIES 9161 AGILENT TECHNOLOGIES 9162 gamma detector tc6* agilent TC611 pn#2 hsch-9161 PN diode specifications GaAs Detector Diode
Contextual Info: HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet Description Features The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. • Low Junction Capacitance • fc >200 GHz • Lower Temperature

Contextual Info: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current

bsm 300 ga 160 dn

Contextual Info: SIEMENS BYM 300 A 170 DN2 Diode Power Module Preliminary data • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 170 DN 2 Type ^R25 BYM 300 A 170 DN2 1700V 380A

UM9441 UM9442

Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
Contextual Info: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of

UM9442

Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
Contextual Info: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of

BY228

Abstract: modulator circuit
Contextual Info: N AMER PHI LIP S/ DI S CR ET E b^E D • bbSB'iBl GÜ2fai*Sfl ÖOS ■ APX BY228 Jl PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television

OW43

Abstract: DF900R12IP4D u 1620 DF900 2n67 667 2N
Contextual Info: Technische Information / technical information DF900R12IP4D IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode

DF600R12IP4D

Abstract: diode 9-f 1N6760
Contextual Info: Technische Information / technical information DF600R12IP4D IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode

DIODE WJ SOD323

Abstract: BZT52C2V0S BZT52C2V0S-BZT52C39S BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S
Contextual Info: BL Galaxy Electrical Production specification Surface mount zener diode FEATURES BZT52C2V0S-BZT52C39S Pb z z Planar die construction. General purpose, medium current. z Ideally suited for automated assembly processes. Lead-free APPLICATIONS z z Zener diode.

smd diode code WP

Abstract: diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode
Contextual Info: SIEMENS BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

LTC4098-3.6

Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense

AK2573A

Abstract: AK2573AVB C101 620CH
Contextual Info: ASAHI KASEI [AK2573A] AK2573A 125M / 156M Laser Diode Driver + APC Features - 1 chip 125M / 156M Laser Diode Driver LDD + Digital APC (APC_FF and APC_FB) - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor (APC_FF)

Contextual Info: BAS 19 . 21 Surface Mount Silicon Planar Small-Signal Diode Silizium-Planar-Diode für die Oberflächenmontage Nominal current – Nennstrom 200 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 85 V Plastic case Kunststoffgehäuse SOT-23

marking code C15

Abstract: AK2574 AK2574VB R132 R133
Contextual Info: ASAHI KASEI [AK2574] AK2574 156M Laser Diode Driver + APC for Burst Mode Features - 156M Laser Diode Driver for burst mode application - BIAS current switching - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor APC_FF

Contextual Info: BAS 16 Silizium-Planar-Diode für die Oberflächenmontage Surface Mount Silicon Planar Small-Signal Diode Nominal current – Nennstrom 250 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 85 V Plastic case Kunststoffgehäuse SOT-23 TO-236

UEL270

Abstract: UEL271 UEL127 M22001 UEL162 UEL273 UEL tdk organic light emitting diode
Contextual Info: High Performance Organic Light Emitting Diode Display Pure White, Mono-color Types and Full-color Types UEL Series TDK CORPORATION TDK CORPORATION High Performance Organic Light Emitting Diode Display Pure White, Mono-color Types and Full-color Types UEL Series

DIODE WJ SOD323

Abstract: BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C4V7S BZT52C2V0S BZT52C2V0S-BZT52C39S BZT52C2V4S BZT52C2V7S
Contextual Info: Surface mount zener diode BZT52C2V0S-BZT52C39S FEATURES Pb z z Planar die construction. General purpose, medium current. z Ideally suited for automated assembly processes. Lead-free APPLICATIONS z z Zener diode. Ultra-small surface mount package. SOD-323 ORDERING INFORMATION

H8 SOT-23

Abstract: marking H8 SOT-23 MMBV609LT1 marking AM sot-23 marking SH SOT23
Contextual Info: MOTOROLA SEMICONDUCTOR @ TECHNICAL SiIicon~ning Order this document by MMBV609LT1/D DATA Diode This device is designed for FM tuning, general frequency control and tuning, or any top–of–th~line application requiring back–to–back diode configuration for minimum

ESJC01-12B

Abstract: IR 9515 ESJC01-09B a1t diode ESJC01
Contextual Info: ESJC01 9kV, 12kV : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC01 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. • : Features Small size

diode rectifier siemens

Contextual Info: SIEMENS BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies ESD: Electrostatic discharge sensitive device, observe handling precaution BAT 62-02W L 1 =C Q62702-A1028 h Pin Configuration < Marking Ordering Code CM Type

Contextual Info: Under development ● New product GH4837A1TG Infrared Laser Diode Infrared Eye-safe Laser Diode • Features ■ Absolute Maximum Ratings Tc=25℃ *1 (1) Wavelength : 830 nm(Typ.) Symbol Ratings Unit Forward Current(CW) Iop 1 A (3) Φ5.6mm CAN package