DIODE VERT Search Results

3.2 v zener diode

Abstract: DIODE ZENER DUAL diode zener protection WT-Z210V zener- diode zener diode Weitron Technology DIODE ZENER X
Contextual Info: WT-Z210V-AU4 Zener Diode Chips Dual Pad for ESD Bidrectional Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application 1-2 This specification applies to N/P/N-Type silicon Zener diode chip (Dual pad/Vertical)

Contextual Info: WT-208DV06 Zener Diode Chips for ESD Bidrectional Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 T ation applies to N/P/N-Type silicon Zener diode chip(Vertical) Device NO:WT-208DV06 2. Structure:

3.2 v zener diode

Abstract: WT-Z206V-AU4 diode zener protection Double Zener diode Zener led 5 V zener diode chip zener diode specification zener diode sILICON ZENER DIODE zener diode chip
Contextual Info: WT-Z206V-AU4 Zener Diode Chips for ESD Bidrectional Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N/P/N-Type silicon Zener diode chip(Vertical) Device NO:WT-Z206V-AU4

DZ800S17K3

Abstract: FF800R17KE3
Contextual Info: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Emitter Controlled³ Diode 62mm C-series module with Emitter Controlled³ diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data

MOZ 23

Abstract: DD1000S33HE3 48 H diode
Contextual Info: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values

DD1000S33

Abstract: FZ1000R33HE3
Contextual Info: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values

schema

Contextual Info: EBC 3 DUO-DIODE­ TRIODE De duo-diode-triode EBC 3 is een com binatie van een triode en tw ee dioden m et een gem eenschappelijke kathode. H et diode-systeem k an dienen voor signaaldetectie en voor vertraagde autom atische geluidssterkte-regeling; h et triode-gedeelte kan gebruikt

DZ800S17K3

Contextual Info: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit EmCon3 Diode 62mm C-series module with EmCon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values

105386

Abstract: dek 1.5 47346-0001 WDK 2.5 105366 105396 105446 WDK 4N 10-588 102260
Contextual Info: Feed Through Terminals WDK 2.5 D WDK 2.5 D Diode terminal for lamp test circuits Diode terminal for lamp test circuits Branch with Diode Branch with Diode WDK 2.5 LD WDK 2.5 LD Branch with LED Branch with LED Terminal Block Selection Data Available Options

Contextual Info: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.

DIODE D2

Abstract: diode bandfilter Diode d3 schema foto diode DE diode
Contextual Info: I * DRIEVOU DIGE DIODE De EÀB 1 is een drievoudige diode, voor gebruik in de bekende drie-dioden schakeling, die een ideale weergaye bevordert. Zij bestaat uit een gem eenschappelijke kathode, w aarom heen drie diodeplaatjes zijn aangebracht. Diode d3 w ordt gebruikt voor de detectie, diode d1 zorgt voor de regelspanning

ADB13

Contextual Info: DATA SHEET LASER DIODE NDL7001 1310 nm FIBER OPTIC COMMUNICATIONS InGaAsP M OW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1310 nm laser diode for fiber optic com m unications and have a M u ltip le Quantum W e ll M Q W structure and built-in InGaAs m onitor photo diode.

MRA333

Abstract: MRA333B 300 volts bridge rectifier
Contextual Info: MRA333, MRA333B silicon Multi-Cell n, power rectifier diode circuits designed for high-current rectifier service. The MRA333 is an air-cooled, integral rectifier assembly engineered for optimum diode/heatsink utilization. MAXIMUM DIODE RATINGS PER CIRCUIT LEG

Contextual Info: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 100 N 16 RR Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung

PMOS MODEL PARAMETERS SPICE

Abstract: PMOS k 815 MOSFET Si6923DQ
Contextual Info: SPICE Device Model Si6923DQ P-Channel Rated MOSFET + Schottky Diode Characteristics • • • • • Applicable Over a -55 to 125 o C Temperature Range • Models Gate Charge, Transient and Diode Reverse P-Channel Vertical DMOS Macro-Model Subcircuit

AOZ8201

Abstract: AOZ8201NI-05L AOZ8201NI-12L SOD523 land pattern DIODE ED 16 AOS date code System General Semiconductor diode marking ME
Contextual Info: AOZ8201 One-line TVS Diode General Description Features The AOZ8201 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. This state-ofthe-art device utilizes AOS leading edge Trench Vertical

AOZ8211

Abstract: AOZ8211NI-05L AOS date code System alpha date code System
Contextual Info: AOZ8211 One-line TVS Diode General Description Features The AOZ8211 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. This state-ofthe-art device utilizes AOS leading edge Trench Vertical

HFE4391-541

Abstract: HFE439X-541 DE diode safety monitor APD 1310 detector APD Arrays T-25 850NM HFE4390-541 TOSA finisar LC TOSA wiggle
Contextual Info: 2.5GBPS 850NM VCSEL SC TOSA PACKAGE DATA SHEET HFE439X-541 These products are high-performance 850nm VCSELs Vertical Cavity SurfaceEmitting Lasers designed for high-speed data communications and packaged with a custom designed power monitor diode. The power monitor diode can

MARK BE diode SOD523

Abstract: diode marking code 12L MARK BE diode SOD523 general AOZ8201 AOZ8201NI-05L AOZ8201NI-12L 12L marking AOS date code System diode body mark a1
Contextual Info: AOZ8201 One-line TVS Diode General Description Features The AOZ8201 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. This state-ofthe-art device utilizes AOS leading edge Trench Vertical

d06s60

Abstract: diode schottky 600v T-1228 SDB06S60 SDP06S60 smd diode marking code UJ
Contextual Info: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery

smd diode marking code UJ

Abstract: Q67040-S4370
Contextual Info: SDB06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery

Contextual Info: DATA SHEET LASER DIODE NDL7408P Series 1 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER DESCRIPTION NDL7408P Series is a 1 310 nm laser diode coaxial module with single mode fiber. It has a strained Multiple Quantum Well st-MQW structure and a built-in InGaAs monitor photo diode.

D06S60

Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
Contextual Info: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery

diode

Abstract: DD400S17K6CB2
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung