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    DIODE V6 40 Search Results

    DIODE V6 40 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE V6 40 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MA46410 thru MA46485 Series GaAs Hyperabrupt Varactor Diode Gamma = 1.0, 1.25, & 1.50 Features Rev. V6 Common Case styles Constant Gamma = 1.0, 1.25 or 1.5 High Q up to 4000 at -4 Volts More Linear Frequency Tuning High and Nearly Constant Modulation Sensitivity


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    MA46410 MA46485 MA46450, MA46470 MA46450 PDF

    PIN diode MACOM SPICE model

    Abstract: MADP-000402-12530P MADP-000402-12530G MADP000402 MA4SPS402 HP4291A M513
    Text: MA4SPS402 SURMOUNTTM PIN Diode RoHS Compliant Rev V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Surface Mount No Wire Bonding Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance


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    MA4SPS402 MADP-000402-12530P PIN diode MACOM SPICE model MADP-000402-12530P MADP-000402-12530G MADP000402 MA4SPS402 HP4291A M513 PDF

    MA4E2054E-1068T

    Abstract: LG diode 831 MA4E2054A-287T MA4E2054B MA4E2054B-287T MA4E2054 equivalent of v6 surface mount diode DIODE 1581
    Text: Also Offering RoHS Compliant Equivalent Parts MA4E2054 Series V6 Surface Mount Low Barrier Schottky Diode Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • High Detector Sensitivity: -55 dBm TSS


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    MA4E2054 100nA 500nA OT-23 OT-143 OT-323 OD-323 ODS-1279 MA4E2054E-1068T LG diode 831 MA4E2054A-287T MA4E2054B MA4E2054B-287T equivalent of v6 surface mount diode DIODE 1581 PDF

    AT10-0019

    Abstract: AT10-0019-TB AT10-0019TR M513 MAAV-007088-000100
    Text: AT10-0019 PIN Diode Based Variable Attenuator, 50 - 1000 MHz Rev. V6 Features • • • • • • Functional Schematic High Dynamic Range: 42dB Typical Flat Attenuation vs. Frequency High P1dB Compression Operates on a Single +5V Supply: 50 Ohm Nominal Impedance


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    AT10-0019 SOW-16 AT10-0019 AT10-00sed AT10-0019-TB AT10-0019TR M513 MAAV-007088-000100 PDF

    MASW-001100-1190

    Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G
    Text: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation than pHempt


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    MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 50MHz 20GHz 33dBm MASW-001100-1190, MASW-002100-1191 MASW-001100-1190 MASW-001100-11900G MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant V6 Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs


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    MA4SW410 30dBm MA4SW410 PDF

    MASW-001100-1190

    Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512
    Text: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches RoHs Compliant Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation


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    MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 50MHz 20GHz 33dBm MASW-001100-1190, MASW-002100-1191 MASW-001100-1190 MASW-001100-11900G MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant M/A-COM Products Rev. V6 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs


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    MA4SW110 MA4SW210 MA4SW310 50MHz 20GHz 30dBm MA4SW110 MA4SW110, PDF

    MA4GP907

    Abstract: 10ghz pin diode
    Text: MA4GP907 GaAs Flip Chip PIN Diode M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V6 RoHS Compliant Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL


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    MA4GP907 MA4GP907 10ghz pin diode PDF

    smd diode v6 59

    Abstract: No abstract text available
    Text: 面実装デバイス アレイ型 ツインダイオード Surface Mounting Device Diode Array Twin Diode •外形寸法図 OUTLINE DIMENSIONS Package:1Z Unit : mm Weight:0.13g(typ.) ④ ① S1ZA□ (1.2) ③ ② (1.2) V6 064D 管理番号(例)


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    25unless wave50Hz smd diode v6 59 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4ST1200 Series Low Tuning Voltage / Low Rs Silicon Hyperabrupt Varactor Diode M/A-COM Products Rev. V6 Features SC-70 3 lead • Low Series Resistance at Low Tuning Voltages • High Capacitance Ratio at Low Tuning Voltages • Surface Mount Plastic Packages : SC-79, SOD323, SC-70 ( 3L )


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    MA4ST1200 SC-70 SC-79, OD323, OD-323 SC-79 PDF

    MASW-000553-13220G

    Abstract: macom rf switch MASW-000553 macom pin diode application
    Text: MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 FEATURES ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz ♦ Functional Bandwidth : 50 MHz to 70 GHz ♦ 0.8 dB Insertion Loss, ♦ 31 dB Isolation at 50 GHz ♦ Low Current consumption. • -10mA for low loss state


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    -10mA MASW-000553-13220G macom rf switch MASW-000553 macom pin diode application PDF

    MA4AGSW3

    Abstract: 10GHZ M541
    Text: MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 FEATURES • Ultra Broad Bandwidth: 50 MHz to 50 GHz  Functional Bandwidth : 50 MHz to 70 GHz  0.8 dB Insertion Loss,  31 dB Isolation at 50 GHz  Low Current consumption.  -10mA for low loss state


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    -10mA MA4AGSW3 10GHZ M541 PDF

    Untitled

    Abstract: No abstract text available
    Text: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features •           Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance


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    MASW-002103-1363 MASW-002103-1363 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA46410 thru MA46485 Series GaAs Hyperabrupt Varactor Diode Gamma = 1.0, 1.25, & 1.50 Features •     Constant Gamma = 1.0, 1.25 or 1.5 High Q up to 4000 at -4 Volts More Linear Frequency Tuning High and Nearly Constant Modulation Sensitivity


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    MA46410 MA46485 MA46450, MA46470 MA46450 PDF

    NTE1681

    Abstract: DIODE S2 S1 DIODE schottky S1 DIODE scr v12 comprator crowbar DC voltage regulator using SCR
    Text: NTE1681 Integrated Circuit High Power Switching Regulator Description: The NTE1681 is a stepdown power switching regulator in a 15−Lead Staggered SIP type package delivering 4A at a voltage variable from 5.1V to 40V. Features of this device include soft start, remote


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    NTE1681 NTE1681 15-Lead 200kHz DIODE S2 S1 DIODE schottky S1 DIODE scr v12 comprator crowbar DC voltage regulator using SCR PDF

    vogt v6

    Abstract: vogt v4 vogt s1 L296 vogt V5 L296P 58930 scr preregulator L296PHT cogema coil 14.5
    Text: L296 L296P HIGH CURRENT SWITCHING REGULATORS . . . . . . . 4 A OUTPUT CURRENT 5.1 V TO 40 V OUTPUT VOLTAGE RANGE 0 TO 100 % DUTY CYCLE RANGE PRECISE ±2 % ON-CHIP REFERENCE SWITCHING FREQUENCY UP TO 200 KHz VERY HIGH EFFICIENCY (UP TO 90 %) VERY FEW EXTERNAL COMPONENTS


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    L296P L296P) L296P vogt v6 vogt v4 vogt s1 L296 vogt V5 58930 scr preregulator L296PHT cogema coil 14.5 PDF

    58930

    Abstract: vogt s1 vogt V5 L296 l296 datasheet vogt v6 L296HT L296P L296PHT
    Text: L296 L296P HIGH CURRENT SWITCHING REGULATORS . . . . . . . 4 A OUTPUT CURRENT 5.1 V TO 40 V OUTPUT VOLTAGE RANGE 0 TO 100 % DUTY CYCLE RANGE PRECISE ±2 % ON-CHIP REFERENCE SWITCHING FREQUENCY UP TO 200 KHz VERY HIGH EFFICIENCY (UP TO 90 %) VERY FEW EXTERNAL COMPONENTS


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    L296P L296P) L296P 58930 vogt s1 vogt V5 L296 l296 datasheet vogt v6 L296HT L296PHT PDF

    vogt s1

    Abstract: cogema 946044 vogt s2 vogt V5 L296 58930 scr v12 L296HT L296P L296PHT
    Text: L296 L296P HIGH CURRENT SWITCHING REGULATORS . . . . . . . 4 A OUTPUT CURRENT 5.1 V TO 40 V OUTPUT VOLTAGE RANGE 0 TO 100 % DUTY CYCLE RANGE PRECISE ±2 % ON-CHIP REFERENCE SWITCHING FREQUENCY UP TO 200 KHz VERY HIGH EFFICIENCY (UP TO 90 %) VERY FEW EXTERNAL COMPONENTS


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    L296P L296P) L296P vogt s1 cogema 946044 vogt s2 vogt V5 L296 58930 scr v12 L296HT L296PHT PDF

    scr preregulator

    Abstract: vogt v6 L296 vogt s1 vogt v5 58930 Siemens EC 35/17/10 thomson gup toroid transistor 6c x vogt l4
    Text: L296 L296P HIGH CURRENT SWITCHING REGULATORS . . . . . . . 4 A OUTPUT CURRENT 5.1 V TO 40 V OUTPUT VOLTAGE RANGE 0 TO 100 % DUTY CYCLE RANGE PRECISE ±2 % ON-CHIP REFERENCE SWITCHING FREQUENCY UP TO 200 KHz VERY HIGH EFFICIENCY (UP TO 90 %) VERY FEW EXTERNAL COMPONENTS


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    L296P L296P) L296P scr preregulator vogt v6 L296 vogt s1 vogt v5 58930 Siemens EC 35/17/10 thomson gup toroid transistor 6c x vogt l4 PDF

    vogt s1

    Abstract: Siemens EC 35/17/10 58930 scr preregulator vogt v6 l296 circuit diagram transistor 6c x ROE capacitor cogema ekr 1000
    Text: L296 L296P  HIGH CURRENT SWITCHING REGULATORS . . . . . . . 4 A OUTPUT CURRENT 5.1 V TO 40 V OUTPUT VOLTAGE RANGE 0 TO 100 % DUTY CYCLE RANGE PRECISE ±2 % ON-CHIP REFERENCE SWITCHING FREQUENCY UP TO 200 KHz VERY HIGH EFFICIENCY (UP TO 90 %) VERY FEW EXTERNAL COMPONENTS


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    L296P L296P) andL296P vogt s1 Siemens EC 35/17/10 58930 scr preregulator vogt v6 l296 circuit diagram transistor 6c x ROE capacitor cogema ekr 1000 PDF

    LTC2990

    Abstract: 2991 0x09-0x1B LTC2991IMS-PBF CET3904
    Text: LTC2991 Octal I2C Voltage, Current, and Temperature Monitor FEATURES DESCRIPTION n The LTC 2991 is used to monitor system temperatures, voltages and currents. Through the I2C serial interface, the eight monitors can individually measure supply voltages and can be paired for differential measurements of current sense resistors or temperature sensing transistors.


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    LTC2991 10ppm 10ppm/ LTC6102HV) 12-Bit 2991fa LTC2990 2991 0x09-0x1B LTC2991IMS-PBF CET3904 PDF

    diode V6

    Abstract: LTC2991 LTC2991IMS diode 14-V6 sunon fan LTC2990 LTC2991C LTC2991CMS LTC2991I LT624
    Text: LTC2991 Octal I2C Voltage, Current, and Temperature Monitor FEATURES DESCRIPTION n The LTC 2991 is used to monitor system temperatures, voltages and currents. Through the I2C serial interface, the eight monitors can individually measure supply voltages and can be paired for differential measurements of current sense resistors or temperature sensing transistors.


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    LTC2991 10ppm LTC2991 LTC2978 LTC4151 12-Bit LTC2487 16-Bit LM134 diode V6 LTC2991IMS diode 14-V6 sunon fan LTC2990 LTC2991C LTC2991CMS LTC2991I LT624 PDF

    fairchild micrologic

    Abstract: SH2002 Diode Transistor ScansUX983 FAIRCHILD DIODE diode 1-35 L V6
    Text: SH2002 DTnL HIGH POWER DRIVER FAIRCHILD HYBRID CIRCUITS • LOGIC FLEXIBILITY.LATCHABLE 4 INPUT NAND WITH INHIBIT NOR INPUT PHYSICAL DIMENSIONS • HIGH CURRENT CAPABILITY . . . UP TO 150 mA TO-lOO • HIGH VOLTAGE CAPABILITY . . . 40 VOLTS LVCEO


    OCR Scan
    SH2002 C-10pF-WIRING fairchild micrologic Diode Transistor ScansUX983 FAIRCHILD DIODE diode 1-35 L V6 PDF