VF-45
Abstract: EM012-V3EA VF-45TM fiber 100base TM-1310
Text: 3.3V VF-45 Transceiver for 100Base-FX TM 1310 nm LED for Multimode Fiber E2O Communications, Inc. EM012-V3EA Preliminary Data Sheet The transmitter consists of a high-performance 1310-nm LED while the receiver consists of an Indium Gallium Arsenide InGaAs PIN and a preamplifier.
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VF-45
100Base-FX
EM012-V3EA
1310-nm
EM012-V3
EN55022
EM012-V3EA
VF-45TM
fiber 100base
TM-1310
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sda 5708
Abstract: fan speed lm358 fan speed control lm358 lm358 pin diagram report on colpitts oscillator FDC658 LM358 temperature controlled fan fan speed control circuit using lm358 automatic fan speed control by room temperature AUTOMATIC fan speed control circuit using lm358
Text: www.fairchildsemi.com FMS2704/FMS2704L Smart TTV Hardware Monitor Features • • • • • • • • • • • Tachometer inputs are monitored continuously with speeds compared with internal limits stored in registers. Individual fan speeds can be sensed through the six TACH inputs.
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FMS2704/FMS2704L
DS30001117
sda 5708
fan speed lm358
fan speed control lm358
lm358 pin diagram
report on colpitts oscillator
FDC658
LM358 temperature controlled fan
fan speed control circuit using lm358
automatic fan speed control by room temperature
AUTOMATIC fan speed control circuit using lm358
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Untitled
Abstract: No abstract text available
Text: SIEMENS IGBT Transistors • • • • • • • • • N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low tem perature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode
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OM6508SA
Abstract: OM6509SA RS1002
Text: OM6508SA OM6509SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package FEATURES • • • • • • • • • Isolated Hermetic Metal Package
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O-254AA
MIL-S-19500,
125-C
OM6508SA
OM6509SA
RS1002
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TO-264 Jedec package outline
Abstract: No abstract text available
Text: nixYS ADVANCEDTECHNICAL INFORMATION High Speed IGBT with Diode IXSH30N60BD1 IXSK30N60BD1 IXST30N60BD1 V CES 600 V 55 A ^C25 V CE sat tfi Short Circuit SOA Capability 2.0 V 140 ns TO-247AD (IXSH) Symbol Test Conditions vCES T j =25°C to150°C VcOR T j = 25° C to 150° C; RGE=
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IXSH30N60BD1
IXSK30N60BD1
IXST30N60BD1
O-247AD
to150
O-264
O-268
TO-264 Jedec package outline
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Untitled
Abstract: No abstract text available
Text: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient
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50N60BU1
50N60BU1
to150
PLUS247TM
O-264AA
IXSX50N60BU1
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DS4307
Abstract: ite60f06 L120A "welding circuit " IGBT 12v dc motor igbt control
Text: Si G E C P L E S S E Y PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4307 -1.2 ITE60F06/ITE60C06 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The IT E 6 0X 06 is a robust n-channel, enhancem ent mode insulated gate bipolar transistor IG BT designed for
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ITE60X06
002m07
ITE60X06
37bfl522
002bMQfi
37bflS22
002b41D
DS4307
ite60f06
L120A
"welding circuit " IGBT
12v dc motor igbt control
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Untitled
Abstract: No abstract text available
Text: BIXYS Advanced Technical Information Ultra-Low VCE sat IGBT with Diode IXGH 31N60D1 IXGT 31N60D1 CES C25 V CE (sat) 600 V = 60 A = 1.7 V oc Combi Pack §_ü^3 i ) ÒB Symbol Test Conditions Maximum Ratings V CES T j = 2 5 °C to 1 5 0 °C 600 V V CGR T j = 25=C to 150° C; RGE = 1 M ii
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31N60D1
31N60D1
O-268
O-247
B2-97
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Untitled
Abstract: No abstract text available
Text: nixY S HiPerFAST IGBT with Diode IXGH39N60BD1 V CES ^C25 V CE sat tn Symbol Test Conditions V CHS T j = 2 5 ° C to 1 5 0 c C 600 V V C GR T , = 25° C to 150° C; RGF = 1 M il 600 V V GES Continuous 120 V Transient +J30 V <c2S T c = 2 5 °C 76 A C90
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IXGH39N60BD1
O-247
125CC,
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irgni120f06
Abstract: No abstract text available
Text: International H Rectifier PD-9.974C IRGNI120F06 "CHOPPER" IGBT INT-A-PAK Fast Speed IGBT VŒ = 600V •Rugged Design •Simple gate-drive •Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses lc = 120 A
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10KHz
50KHz
IRGNI120F06
C-199
C-200
irgni120f06
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DIODE C817
Abstract: DIODE C813 953B IRGTI050U06 C814 C817 C813
Text: International ï «k Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE" IGBTINT-A-PAK Ultra-fast Speed 1GBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 2 5K H z hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
supplies817
IRGTI050U06
10OnH
C-818
DIODE C817
DIODE C813
953B
C814
C817
C813
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM200HC-M APPLICATION Robotics, W elders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dim ensions in mm BO — f - t j - - W V -4 — •f-AAA'-t- EO —-'j' ex ó
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QM200HC-M
VCO200V
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12 VOLT 150 AMP smps
Abstract: IGBT 50 amp 1000 volt LC BRIDGE CIRCUIT diode v3e igbt 500V 15A OM9034SF OM9035SF 12 VOLT 100 AMP smps IGBT gate driver schematic 10 AMP 1000V RECTIFIER DIODE
Text: OM9034SF OM9Q35SF HALF BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 30 And 25 Amp IGBT Module With Soft Recovery Rectifier, Half Bridge Configuration With Gate Drivers FEATURES • • • • • Hermetic Isolated Metal Package
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OM9034SF
OM9Q35SF
6c5G73
12 VOLT 150 AMP smps
IGBT 50 amp 1000 volt
LC BRIDGE CIRCUIT
diode v3e
igbt 500V 15A
OM9035SF
12 VOLT 100 AMP smps
IGBT gate driver schematic
10 AMP 1000V RECTIFIER DIODE
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diode b24a
Abstract: diode v3e Mitsubishi transistor QM600H
Text: MITSUBISHI TRANSISTOR MODULES f QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Forklifts, W elders OUTLINE DRAWING 8t CIRCUIT DIAGRAM Dimensions in mm 9e B°-r—C - V 'A - — wE O Ô BX M4 2 - 210 OE | S MITSUBISHI TRANSISTOR MODULES
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QM600HD-M
diode b24a
diode v3e
Mitsubishi transistor
QM600H
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Untitled
Abstract: No abstract text available
Text: OM6OL6OHB QM50F60HB Prelim inary Data Sheet OM45LI20HB OM35F12QHB HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 A m p IG BT s With F R E D Diodes. Half -Br id ge Con fig ura tio n FEATURES •
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QM50F60HB
OM45LI20HB
OM35F12QHB
MIL-S-19500,
L120HB
50F60HB
35F120HB
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dt300
Abstract: J600C
Text: FUJI 2 [!^ [M â T ü S O Ë M B I 7 5 2-Pack IGBT 1200 V 75 A F - 1 2 Û IGBT MODULE { F series • Features • Low Saturation Voltage • Voltage Drive • Variety of Power Capacity Series ■ Applications • Inverter for Motor Drive • AC and DC Servo Drive Amplifier
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L82988
dt300
J600C
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OM9038SF
Abstract: OM9039SF 12 VOLT 100 AMP smps diode v3e
Text: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design
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12-Pin
OM9038SF
0M9Q39SF
OM9039SF
12 VOLT 100 AMP smps
diode v3e
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Untitled
Abstract: No abstract text available
Text: OM6529SS OM653QSS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability
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OM6529SS
OM653QSS
MIL-S-19500,
150-C
OM6529SS
QM6530SS
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OM6512SC
Abstract: OM6513SC
Text: OM6512SC OM6513SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off
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OM6512SC
OM6513SC
O-258AA
MIL-S-19500,
OM6513SC
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Untitled
Abstract: No abstract text available
Text: OM6518SS OM6519SS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability
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OM6518SS
OM6519SS
MIL-S-19500,
OM6518SS
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SD2108-Silicon NPN Triple Diffused Low Frequency Power Amplifier Absolute M aximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage v cao 80 V Collector to emitter voltage VC£0 80 V Emitter to base voltage V ebq 7 V Collector current
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2SD2108----Silicon
O-220FM
2SD1604.
2SD2108
2SD21
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200v dc motor igbt
Abstract: 005D
Text: 2-Pack IGBT 600 V 75 A FU J! êü M Ië IGBT MODULE L series Outline Drawings • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter fo r M otor Drive • AC and DC Servo Drive A m p lifier • Uninterruptible P ow er Supply
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diode 65d
Abstract: No abstract text available
Text: FUJI SüJMsulJälJK 2SK2754-01L,S FAP-IIS Series > Features - N-channel MOS-FET 450V 0,65D 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated
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2SK2754-01
diode 65d
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MP 130B
Abstract: 35 VOLT 3 AMP smps schematics UPS schematics OM6527SC OM6528SC
Text: OM6527SC OM6528SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 15 Am p, N-Channel IGBT In A H erm etic Metal Package FEATURES • • • • • • • • Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage
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OM6527SC
OM6528SC
O-258AA
MIL-S-19500,
-15Ap/S
MP 130B
35 VOLT 3 AMP smps schematics
UPS schematics
OM6528SC
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