BAR63-02L
Abstract: No abstract text available
Text: BAR63-02L Silicon PIN Diode Preliminary data PIN diode for high speed switching 2 of RF signals Very low forward resistance low insertion loss 1 Very low capacitance (high isolation) small inductance For frequencies up to 3GHz Ultra small leadless package
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BAR63-02L
EHA07001
Aug-27-2001
100MHz
EHD07139
EHD07138
EHD07171
BAR63-02L
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Untitled
Abstract: No abstract text available
Text: BAR 63-02L Silicon PIN Diode Preliminary data PIN diode for high speed switching 2 of RF signals Very low forward resistance low insertion loss 1 Very low capacitance (high isolation) small inductance For frequencies up to 3GHz Ultra small leadless package
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63-02L
EHA07001
Mar-05-2001
100MHz
EHD07139
EHD07138
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BAR63-07F
Abstract: P3S marking TSFP-4
Text: BAR63-07F XYs Silicon PIN Diode Preliminary data 3 PIN diode for high speed switching of RF signals 2 4 1 Very low forward resistance low insertion loss Very low capacitance (high isolation) TSFP-4 small inductance For frequencies up to 3GHz Ultra small SMD package for dual diodes
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BAR63-07F
Mar-08-2002
BAR63-07F
P3S marking
TSFP-4
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RF300RF303
Abstract: RF300 RF303D-5 RF300 motor 9 Volt DPDT Relay RF300D-12 RF303D-12 Teledyne rf300 RF300D-5 dpdt latching relay
Text: Series RF300/RF303 DPDT Non-Latching Electromechanical Relay Signal Integrity up to 10Gbps HIGH REPEATABILITY, BROADBAND TO-5 RELAYS DPDT SERIES RELAY TYPE RF300 Repeatable, RF relay RF300D Repeatable, RF relay with internal diode for coil transient suppression
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RF300/RF303
10Gbps
RF300
RF300D
RF300DD
RF303
RF303D
RF303DD
RF300
RF303
RF300RF303
RF303D-5
RF300 motor
9 Volt DPDT Relay
RF300D-12
RF303D-12
Teledyne rf300
RF300D-5
dpdt latching relay
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Untitled
Abstract: No abstract text available
Text: Series RF300/RF303 DPDT Non-Latching Electromechanical Relay Signal Integrity up to 10Gbps HIGH REPEATABILITY, BROADBAND TO-5 RELAYS DPDT SERIES RELAY TYPE RF300 Repeatable, RF relay RF300D Repeatable, RF relay with internal diode for coil transient suppression
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RF300/RF303
10Gbps
RF300
RF300D
RF300DD
RF303
RF303D
RF303DD
RF300
RF303
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GRF300
Abstract: GRF300GRF303
Text: Series GRF300/GRF303 DPDT Non-Latching Electromechanical Relay Signal Integrity up to 18Gbps SURFACE MOUNT HIGH REPEATABILITY, BROADBAND TO-5 RELAYS DPDT SERIES RELAY TYPE GRF300 Repeatable, RF relay GRF300D Repeatable, RF relay with internal diode for coil transient suppression
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GRF300/GRF303
18Gbps
GRF300
GRF300D
GRF300DD
GRF303
GRF303D
GRF303DD
GRF300
GRF300GRF303\082013\Q3
GRF300GRF303
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Untitled
Abstract: No abstract text available
Text: Series GRF300/GRF303 DPDT Non-Latching Electromechanical Relay Signal Integrity up to 18Gbps SURFACE MOUNT HIGH REPEATABILITY, BROADBAND TO-5 RELAYS DPDT SERIES RELAY TYPE GRF300 Repeatable, RF relay GRF300D Repeatable, RF relay with internal diode for coil transient suppression
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GRF300/GRF303
18Gbps
GRF300
GRF300D
GRF300DD
GRF303
GRF303D
GRF303DD
GRF300
GRF300GRF303\102012\Q3
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SGRF300
Abstract: No abstract text available
Text: Series SGRF300/SGRF303 DPDT Non-Latching Electromechanical Relay Signal Integrity up to 18Gbps SURFACE MOUNT HIGH REPEATABILITY, BROADBAND TO-5 RELAYS DPDT SERIES RELAY TYPE SGRF300 Repeatable, RF relay SGRF300D Repeatable, RF relay with internal diode for coil transient suppression
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SGRF300/SGRF303
18Gbps
SGRF300
SGRF300D
SGRF300DD
SGRF303
SGRF303D
SGRF303DD
SGRF302012\Q3
SGRF300
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BAR63-02W
Abstract: BAR63-02L BAR63-02V
Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)
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BAR63.
Q1011)
BAR63-02.
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
BAR63-02W
BAR63-02L
BAR63-02V
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BAR63-05
Abstract: BAR63-02L BAR63-02V
Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05
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BAR63.
BAR63-02.
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
BAR63-07L4
BAR63-02L
BAR63-02V
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BAR63-02W
Abstract: BAR63-02L BAR63-02V
Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05
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BAR63.
BAR63-02.
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
BAR63-07L4
BAR63-02W
BAR63-02L
BAR63-02V
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BAR63-02W
Abstract: BAR63-02L BAR63-02V
Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05
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BAR63.
BAR63-02.
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
BAR63-07L4
BAR63-02W
BAR63-02L
BAR63-02V
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BAR63-02V
Abstract: No abstract text available
Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05
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BAR63.
BAR63-02.
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
BAR63-02L
BAR63-02V
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marking G5s
Abstract: BAR63-02L BAR63-02V
Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05
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BAR63.
BAR63-02.
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
BAR63-07L4
marking G5s
BAR63-02L
BAR63-02V
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Pin diode G4S
Abstract: BAR63-02L BAR63-04W BAR63 BAR63-03W BAR63-04 BAR63-05 BAR63-05W BAR63-06 BAR63-06W
Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05
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BAR63.
BAR63-02.
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
SCD80
OD323
OT323
Pin diode G4S
BAR63-02L
BAR63-04W
BAR63
BAR63-03W
BAR63-04
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
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BAR63-02L
Abstract: BAR63-07L4 Pin diode G4S BAR63 BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06
Text: BAR63. Silicon PIN Diodes PIN diode for high speed switching of RF signals Very low forward resistance low insertion loss Very low capacitance (high isolation) For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W
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BAR63.
BAR63-02.
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
SCD80
OD323
OT323
BAR63-02L
BAR63-07L4
Pin diode G4S
BAR63
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
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Pin diode G4S
Abstract: BAR63 BAR63-02L BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W
Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101
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BAR63.
BAR63-02.
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
BAR63-02L
Pin diode G4S
BAR63
BAR63-02L
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
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DIODE marking A2 SCD80
Abstract: BAR63-02W BAR63-02L BAR63-02V BAR63
Text: BAR63. Silicon PIN Diodes PIN diode for high speed switching of RF signals Very low forward resistance low insertion loss Very low capacitance (high isolation) For frequencies up to 3GHz BAR63-02. BAR63-03W 1 BAR63-04 BAR63-04W BAR63-04S BAR63-05
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BAR63.
BAR63-02.
BAR63-03W
BAR63-04
BAR63-04W
BAR63-04S
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
DIODE marking A2 SCD80
BAR63-02W
BAR63-02L
BAR63-02V
BAR63
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Untitled
Abstract: No abstract text available
Text: BAR 64 . W 3 Silicon PIN Diode High voltage current controlled RF resistor for RF attenuator and switches 2 Frequency range above 1MHz Low resistance and short carrier lifetime 1 For frequencies up to 3GHz BAR 64-04W BAR 64-05W VSO05561 BAR 64-06W
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4-04W
4-05W
VSO05561
4-06W
EHA07181
EHA07187
EHA07179
OT-323
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Untitled
Abstract: No abstract text available
Text: BAR 64-02V Silicon PIN Diode 2 High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1MHz 1 Low resistance and short carrier lifetime VES05991 Very low inductance For frequencies up to 3GHz Extremely small plastic SMD package
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4-02V
VES05991
SC-79
Feb-20-2001
900MHz
1800MHz
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SI01-17
Abstract: No abstract text available
Text: SI01-17 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS 10/100 ETHERNET PROTECTION the Ethernet chip. The challenge is to find a TVS transient voltage suppressor that will clamp low enough as to prevent latch-up or damage to the Ethernet IC. Also, the protection device must add
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SI01-17
100Mbps
SRV05-4
SI01-17
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ethernet transformer Application Note
Abstract: SRV05-4 TVS diode Application Note
Text: SI01-17 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS 10/100 ETHERNET PROTECTION the Ethernet chip. The challenge is to find a TVS transient voltage suppressor that will clamp low enough as to prevent latch-up or damage to the Ethernet IC. Also, the protection device must add
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SI01-17
100Mbps
SRV05-4
SRV05-4
ethernet transformer Application Note
TVS diode Application Note
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LTRW
Abstract: RF AMPLIFIER marking S5 RF 900MHz TO 1800MHz MARKING bw SOT23 LTC DWG 05-08-1633 dual directional coupler LTC5505-1 LTC5505-1ES5 LTC5505-2 LTC5505-2ES5
Text: Final Electrical Specifications LTC5505-1/LTC5505-2 RF Power Detector with Buffered Output and >40dB Dynamic Range October 2001 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ The LTC 5505-X is an RF power detector for RF applications operating in the 300MHz to 3GHz range. A temperature compensated Schottky diode peak detector and buffer
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LTC5505-1/LTC5505-2
5505-X
300MHz
LTC5505-1,
28dBm
18dBm
LTC5505-2,
32dBm
12dBm
LTRW
RF AMPLIFIER marking S5
RF 900MHz TO 1800MHz
MARKING bw SOT23
LTC DWG 05-08-1633
dual directional coupler
LTC5505-1
LTC5505-1ES5
LTC5505-2
LTC5505-2ES5
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Untitled
Abstract: No abstract text available
Text: Switches - PIN Diode These solid-state PIN Diode RF switches operate from 10 MHz to 1.5 GHz and can be used to control the RF signal path. The units are available in many package configurations with up to eight 8 throws. Control is obtained through TTL Logic.
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OCR Scan
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TWM5000
TWD5001
TWD5015
TWD5002
TWD5004
TWD5003
D5005
DP-11
TWH7230
TWH5016
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