Untitled
Abstract: No abstract text available
Text: STS5DNF20V N-channel 20 V, 0.030 Ω typ, 5 A STripFET II Power MOSFET in a SO-8 package Datasheet - production data Features Order code VDSS STS5DNF20V 20 V RDS on max. ID 0.040 Ω @ 4.5 V 0.045 Ω @ 2.7 V 5A • Ultra low threshold gate drive (2.7 V)
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STS5DNF20V
DocID7608
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Untitled
Abstract: No abstract text available
Text: STS8C5H30L N-channel 30 V, 0.018 Ω typ., 8 A, P-channel 30 V, 0.045 Ω typ., 5 A Power MOSFET in a SO-8 package Datasheet - production data Features Order code Channel VDS 5 N 8 STS8C5H30L 30 V P RDS on max ID 0.022 Ω 8A 0.055 Ω 5A • Conduction losses reduced
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STS8C5H30L
DocID10809
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Untitled
Abstract: No abstract text available
Text: STL150N3LLH5 N-channel 30 V, 0.0014 Ω typ., 35 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Order code VDS RDS on max. ID STL150N3LLH5 30 V 0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb
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STL150N3LLH5
DocID14092
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Untitled
Abstract: No abstract text available
Text: STL4N10F7 N-channel 100 V, 0.062 Ω typ., 4.5 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Features 1 2 Order code VDS RDS on max ID STL4N10F7 100 V 0.07 Ω 4.5 A • N-channel enhancement mode
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STL4N10F7
DocID023898
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Untitled
Abstract: No abstract text available
Text: STS8C6H3LL N-channel 30 V, 0.019 Ω typ., 8 A, P-channel 30 V, 0.024 Ω typ., 6 A STripFET Power MOSFET in a SO-8 package Datasheet - preliminary data Features Order code Channel VDS RDS on max ID 0.021 Ω 8A 0.030 Ω 5A N STS8C6H3LL 30 V P • STripFET™V N-channel Power MOSFET
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DocID023495
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P40NF10
Abstract: STP40NF10 d1 marking code dpak transistor p40nf S2180
Text: STP40NF10 N-channel 100 V, 0.025 Ω, 50 A TO-220 low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STP40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 3 1 2 TO-220
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STP40NF10
O-220
P40NF10
STP40NF10
d1 marking code dpak transistor
p40nf
S2180
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Untitled
Abstract: No abstract text available
Text: STL160N3LLH6 N-channel 30 V, 0.0011 Ω typ., 45 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet − production data Features Order code VDSS RDS on max ID STL160N3LLH6 30 V 0.0013 Ω 45 A (1) 1. The value is rated according Rthj-pcb
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STL160N3LLH6
DocID18223
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54NM65ND
Abstract: No abstract text available
Text: STW54NM65ND N-channel 650 V, 0.055 Ω typ., 49 A FDmesh II Power MOSFET with fast diode in a TO-247 package Datasheet — production data Features Order code VDSS (@Tjmax) RDS(on) max. ID STW54NM65ND 710 V < 0.065 Ω 49 A • The worldwide best RDS(on) * area amongst the
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STW54NM65ND
O-247
O-247
54NM65ND
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54NM65ND
Abstract: No abstract text available
Text: STW54NM65ND N-channel 650 V, 0.055 Ω, 49 A TO-247 FDmesh II Power MOSFET with fast diode Features Order code VDSS (@Tjmax) RDS(on) max. ID STW54NM65ND 710 V < 0.065 Ω 49 A • The worldwide best RDS(on) * area amongst the fast recovery diode devices
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STW54NM65ND
O-247
O-247
54NM65ND
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STW56NM60N
Abstract: No abstract text available
Text: STW56NM60ND N-channel 600 V, 0.047 Ω typ., 50 A FDmesh II Power MOSFET in TO-247 package Datasheet — preliminary data Features Order code VDSS @ TJMAX RDS on max ID STW56NM60ND 650 V < 0.06 Ω 50 A • The worldwide best RDS(on) * area amongst the fast recovery diode devices
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STW56NM60ND
O-247
O-247
STW56NM60N
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Untitled
Abstract: No abstract text available
Text: STE60N105DK5 N-channel 1050 V, 0.1 Ω typ., 44 A Zener protected SuperMESH 5 Power MOSFET in a ISOTOP package Datasheet — preliminary data Features Oreder code VDSS STE60N105DK5 1050 V RDS on max ID PTOT 0.120 Ω 44 A 625 W • Worldwide best RDS(on)*area
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STE60N105DK5
STE60N105DK5
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Untitled
Abstract: No abstract text available
Text: STY50N105DK5 N-channel 1050 V, 0.1 Ω typ., 44 A Zener-protected SuperMESH 5 Power MOSFET in a Max247 package Datasheet — preliminary data Features Order code VDS STY50N105DK5 1050 V RDS on max ID PTOT 0.120 Ω 44 A 625 W • Worldwide best RDS(on)*area
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STY50N105DK5
Max247
STY50N105DK5
Max247
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stw62nm60n
Abstract: No abstract text available
Text: STW62NM60N N-channel 600 V, 0.042 Ω, 55 A TO-247 MDmesh II Power MOSFET Preliminary data Features Order code VDSS RDS on max ID STW62NM60N 600 V < 0.048 Ω 55 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ 2 Low gate input resistance
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STW62NM60N
O-247
O-247
stw62nm60n
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STD40NF10
Abstract: D40NF
Text: STD40NF10 N-channel 100 V, 0.025 Ω, 50 A DPAK low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STD40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 3 1 DPAK Application
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STD40NF10
STD40NF10
D40NF
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STW56NM60N
Abstract: 56NM60N
Text: STW56NM60N N-channel 600 V, 0.05 Ω, 45 A TO-247 MDmesh II Power MOSFET Preliminary data Features Order code VDSS RDS on max ID STW56NM60N 600 V < 0.06 Ω 45 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ 2 Low gate input resistance
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STW56NM60N
O-247
O-247
STW56NM60N
56NM60N
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STW58NM60N
Abstract: No abstract text available
Text: STW58NM60N N-channel 600 V, 0.05 Ω, 45 A TO-247 MDmesh II Power MOSFET Preliminary data Features Order code VDSS RDS on max ID STW58NM60N 600 V < 0.06 Ω 45 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ 2 Low gate input resistance
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STW58NM60N
O-247
O-247
STW58NM60N
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STS3N95K3
Abstract: No abstract text available
Text: STS3N95K3 N-channel 950 V, 5 Ω, 0.4 A SO-8 Zener-protected SuperMESH3 Power MOSFET Preliminary data Features Order code VDSS RDS on max ID Pw STS3N95K3 950 V < 6.3 Ω 0.4 A 2W • 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized
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STS3N95K3
STS3N95K3
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5DNF20V
Abstract: STS5DNF20V 5DNF
Text: STS5DNF20V N-channel 20 V, 0.030 Ω, 5 A SO-8 2.7 V, drive STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STS5DNF20V 20 V < 0.040Ω @ 4.5 V < 0.045Ω @ 2.7 V 5A • Ultra low threshold gate drive (2.7 V) ■ Standard outline for easy automated surface
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STS5DNF20V
STS5DNF20V
5DNF20V
5DNF
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S6NF
Abstract: No abstract text available
Text: STS6NF20V N-channel 20 V, 0.030 Ω typ., 6 A 2.7 V drive STripFET II Power MOSFET in a SO-8 package Datasheet — production data Features Order code VDSS STS6NF20V 20 V RDS on < 0.040 Ω (@4.5 V) < 0.045 Ω (@2.7 V) ID 6A • Ultra low threshold gate drive (2.5 V)
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STS6NF20V
STS6NF20V
S6NF
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f10nk50z
Abstract: f10nk f10nk50 STF10NK F10N STF10NK50Z
Text: STF10NK50Z N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH Power MOSFET in TO-220FP package Datasheet — production data Features Order code VDSS RDS on max ID PTOT STF10NK50Z 500 V < 0.7 Ω 9A 30 W • Extremely high dv/dt capability ■ 100% avalanche tested
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STF10NK50Z
O-220FP
O-220FP
f10nk50z
f10nk
f10nk50
STF10NK
F10N
STF10NK50Z
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W12NK90Z
Abstract: STW12NK90Z W12NK w12nk90 NC 9615
Text: STW12NK90Z N-channel 900 V, 0.72 Ω, 11 A TO-247 Zener-protected SuperMESH Power MOSFET Features Order code VDSS RDS on max STW12NK90Z 900 V < 0.88 Ω ID Pw 11 A 230 W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized
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STW12NK90Z
O-247
W12NK90Z
STW12NK90Z
W12NK
w12nk90
NC 9615
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W20NK50
Abstract: w20nk50z W20NK50Z ST STW20NK50Z ST W20NK STW20NK50Z
Text: STW20NK50Z N-channel 500 V, 0.23 Ω, 20 A SuperMESH Power MOSFET Zener-protected in TO-247 package Datasheet — production data Features Order code VDSS RDS on max STW20NK50Z 500 V < 0.27 Ω • Extremely high dv/dt capability ■ 100% avalanche tested
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STW20NK50Z
O-247
STW20NK50Z
O-247
W20NK50
w20nk50z
W20NK50Z ST
STW20NK50Z ST
W20NK
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STW26NM60-H
Abstract: W26NM60 stw26nm60h w26nm60 equivalent STW26NM60 18162 W26nm
Text: STW26NM60-H N-channel 600 V, 0.125 Ω, 30 A TO-247 MDmesh II Power MOSFET Features Order code VDSS RDS on max ID STW26NM60-H 600 V < 0.135 Ω 30 A • High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge ■ Low gate input resistance
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STW26NM60-H
O-247
STW26NM60-H
W26NM60
stw26nm60h
w26nm60 equivalent
STW26NM60
18162
W26nm
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STP130N10F3
Abstract: 130N10F3 Part Marking TO-220 STMicroelectronics
Text: STP130N10F3 N-channel 100 V, 6.2 mΩ, 180 A STripFET Power MOSFET TO-220 Preliminary data Features Order codes VDSS RDS on max. ID STP130N10F3 100 V 8.4 mΩ 130 A • Ultra low on-resistance ■ 100% avalanche tested 3 1 Application 2 TO-220 High current switching applications
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STP130N10F3
O-220
130N10F3
STP130N10F3
130N10F3
Part Marking TO-220 STMicroelectronics
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