BA182
Abstract: tfk 4 SOD 23 TFK diode br351 SOD-23
Text: BA 182 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Bereichsumschaltung in VHF-Tunern A p p lic a tio n s : Band se le cto r in VHF-tuners Abmessungen in mm D im en sio n s in mm 2 ,4 KATHODE 1 2 ,5 0 ,2 1,2 0 ,7 5 fdsHf CA TH OD E
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BA182
BA182
tfk 4
SOD 23
TFK diode
br351
SOD-23
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T 4512 H diode
Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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--25-OÃ
T 4512 H diode
ABB thyristor modules
T 3512 H diode
diode T 4512 H
free of LA 4508
7508H
diode T 3512 H
V10-40
vez300
CLA 80 E 1200
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nec laser diode OTDR
Abstract: NEC LASER DIODE PIN DIP NDL5070 NDL5060 NDL5061 NDL5071 NDL5762P NDL5772P PULSED LASER DIODE
Text: N E C ELECTRONICS INC b2E J> m b427S2S GD37c1cib 131 « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5772P ELECTRON DEVICE 1 5 5 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DC-PBH PULSED LASER DIODE MODULE DESCRIPTION N D L 5 77 2P is a 1 5 5 0 nm pulsed laser diode DIP m odule w ith singlem ode fib er and internal th erm o -electric cooler. It is
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bM5752S
D37e1cib
NDL5772P
NDL5772P
b42752S
NDL5060
NDL5061
NDL5070
NDL5071
nec laser diode OTDR
NEC LASER DIODE PIN DIP
NDL5762P
PULSED LASER DIODE
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Thyristor ABB ys 150
Abstract: No abstract text available
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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RSZ5243B
Abstract: No abstract text available
Text: Diodes 225mW Zener Diode for Voltage Control RSZ5200B Series *T h is p ro d u ct is m arketed o n ly in co u n trie s o th e r th a n Japan •A p p lic a tio n s »External dim ensions Units: mm C o n s ta n t vo lta g e control £ ,9 + 0.2 0 .9 5 + ^ 3.4 5 + 0,1
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225mW
RSZ5200B
RSZ5243B
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MI32T
Abstract: No abstract text available
Text: CRO INFRARED EMITTING DIODE 02.94 “ 0.116 DESCRIPTION r 5 .L M I32T is GaAlAs infrared emiitting diode m olded in 3mm MI32T diam eter > Th 1.02 J V S ') (0.04) 0.75(0.03)_j max. 1J u clear transparent lens. 0.5 (0.02)~~ •2.5(0.1) ABSOLUTE MAXIMUM RATINGS
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MI32T
MI32T
100mA
160mW
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1-GT-38
Abstract: Triangle Microwave Triangle Microwave attenuator 1-GT-10 KDI triangle 2-gt attenuator
Text: TEMPERATURE COMPENSATED, VOLTAGE CONTROLLED, ABSORPTIVE, CONTINUOUSLY VARIABLE ATTENUATORS, PIN DIODE 0.25-18 GHz SERIES 1-GT-TT/TR CI.12 5 / 0 3 2 0 01 A . TH RU 4 M T6 . H O LES -aio GENERAL INFORMATION: KDI/Triangle’s pin diode attenuators continuously change
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IRKCL91-02S02
Abstract: IRKCL91-04S02 IRKDL71-06S02 IRKDL56-06S02 B40DL100S05 IRKJL91-04S02 B40CL10S02 B40CL20S02 B40CL40S02 B40CL60S02
Text: 4ÖS5MS5 0010737 ì • SbE D INTE RNATIONAL RECTI FIE R International ì »r |Rectifier T - 0 3 'û i Power Modules, Diode/Diode, Fast V RRM !F AV Tc 50Hz 60Hz Part number (6 ) (7) V FM (8 ) (V) V (2 ) (5) R th J C D C (3) Case Case Outline Notes (A) (°C)
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B40DL10S02
B40DL20SQ2
B40DL40S02
B40DL60S02
B40CL10S02
B40CL20S02
B40CL40S02
B40CL60S02
B40JL10S02
B40JL20S02
IRKCL91-02S02
IRKCL91-04S02
IRKDL71-06S02
IRKDL56-06S02
B40DL100S05
IRKJL91-04S02
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IRKCL91-06S02
Abstract: ior e78996 158lf B40DL100S05 IRKJL91-02S02 E78996 ior fm50h 1406 diode 1RKC IRKCL91-04S02
Text: Power Modules International IOR' R e c tifie r Diode/Diode, Fast lF A V @ T c Part Nu m be r (7) (8) (V) V FM 50 H z Vr rm (6) >FS M d > (A) (°C ) (A) 60 H z (A) (2) (V) trr (5) (ns) A th JC DC (°C/W ) B40DL10S02 B40DL20S02 B40DL40S02 B40DL60S02 B40CL10S02
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B40DL10S02
B40DL20S02
B40DL40S02
B40DL60S02
B40DL10S05
B40DL20S05
B40DL40S05
B40DL60S05
B40DL80S05
B40DL100S05
IRKCL91-06S02
ior e78996
158lf
IRKJL91-02S02
E78996 ior
fm50h
1406 diode
1RKC
IRKCL91-04S02
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J533
Abstract: 5KV fast recovery DIODE
Text: Super Fast Recovery Diode Single Diode Wtm D3L60 OUTLINE 600V 3A Feature • rüIitEEFRD • High V oltage S u p er FRD • trr=50ns • trr= 5 0 n s • Z> lÆ -JU K • Full M o ld e d • « lIÎ E 1 .5 k V « |Œ • D ielectric S tre n g th 1,5kV • PFC
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D3L60
J533
5KV fast recovery DIODE
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W3100
Abstract: DIODE REDRESSEMENT T-25-23 ABB thyristor modules k4101 K21-0120A Diodes de redressement
Text: A S E A BROUN/ABB “ñ3 SEMICON Netz-Thyristor-Diode-Module iT | □□4ñ30ñ □□□Dns 2 1 ~ -^ -_ 2 5 -2 3 Phase control Thyristor-Diode-Modules D aten pro D iode Oder T h y ris to r/d a ta p e r d io d e o r th y r is to r /ie s ca racté ristiq u es se ra p p o rte n t à 1 d io d e ou à 1 th y ris to r
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OG4030a
K21-0120
K21-0180
K21-0265
W3100
DIODE REDRESSEMENT
T-25-23
ABB thyristor modules
k4101
K21-0120A
Diodes de redressement
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IR E78996
Abstract: E78996 rectifier module E78996 Diode E78996 E78996 IR IRKH136-16D25 14D20 IR E78996 135 KL23014
Text: International H ]Rectifier Power Modules Thyristor with high voltage diode Voltage Range lT A V @ T c i f (a v (1) (2) (3) (4) Diode •TSM' >FSM (5) R th JC DC ) (3) (4) Thyristor (V) (V) (A) (°C ) 50 H z (A) IRKH136-14D20 IRKH136-16D25 IRKL136-14D20
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IRKH136-14D20
IRKH136-16D25
IRKH142-14D20
IRKH142-16D25
IRKH142-18D28
IRKH142-20D32
IRKH162-14D20
IRKH162-16D25
170-14D20
IRKH170-16D25
IR E78996
E78996 rectifier module
E78996 Diode
E78996
E78996 IR
14D20
IR E78996 135
KL23014
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SOT23 M
Abstract: 100S BAS31 MA840 GENERAL PURPOSE DIODE
Text: BAS31 9 D iscrete POWER & S ign al Technologies National Semiconductor" BAS31 M CONNECTION DIAGRAM SOT-23 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* T A = 2 5 ° C unless o th e rw ise noted Parameter Symbol Value
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BAS31
OT-23
SOT23 M
100S
BAS31
MA840
GENERAL PURPOSE DIODE
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1SS315
Abstract: No abstract text available
Text: TOSHIBA 1SS315 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS31 5 UHF BAND MIXER APPLICATIONS. U n i t in m m + 0.2 1.2 5 - 0 . il 0*tH ÖÖ i +I 0 ± 0.05 M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current
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1SS315
1SS315
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Untitled
Abstract: No abstract text available
Text: n ^EGsG RETICON TH Series Solid State Scanners General Description [ — I 22 ] Start Temp. Diode 1 [ 2 21 ] 01 Antiblooming Drain [ 3 20 V DDG £ 4 19 ] N/C [ 5 18 ] N/C v Sub t 6 17 ' v Sub N/C I Reset Gate Temp Diode 2 Active Video 7 16 N/C E 8 15 ] End-Of*Scan Enable
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22-pin
128-element
RL0256TH
RL0512TH
RL0128THQ-011
RL0256THQ-011
RL0512THQ-011
RC1031LNN-011
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Untitled
Abstract: No abstract text available
Text: Central CLL4689 TH RU CLL4714 Sem icon du ctor Corp. 500mW LOW LEVEL ZENER DIODE 5% TOLERANCE DESCRIPTION: The C E N T R A L S E M IC O N D U C T O R C L L 4 6 8 9 Se rie s Silicon Zener Diode is a high quality voltage regulator designed for applications requiring an
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CLL4689
CLL4714
500mW
CLL4690
CLL4691
CLL4692
CLL4693
CLL4694
CLL4695
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f8l60
Abstract: f8l60usm SF8L60USM 2kv diode fly wheel diode marking code 58 f8l6
Text: Super Fast Recovery Diode Single Diode W tm SF8L60USM OUTLINE 60 0V 8A Feature • m s 'ix • • L o w N oise tr r = 2 5 n s • trr= 2 5 n s • 71 [Æ - J U K • Full M o ld e d • « I M E 2kVSEE • D ie le ctric S tre n g th 2kV Main Use • T.'i
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SF8L60USM
FTQ-220A
F8L60USM
waveli50Hz
f8l60
f8l60usm
SF8L60USM
2kv diode
fly wheel
diode marking code 58
f8l6
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Untitled
Abstract: No abstract text available
Text: S iM IC3QMPUCTQ R MMBD914 CONNECTION DIAGRAM SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1 P. See 1N4148 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units W IV Working Inverse Voltage
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MMBD914
OT-23
1N4148
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Untitled
Abstract: No abstract text available
Text: S iM IC3QMPUCTQ R BAW56 CONNECTION DIAGRAMS SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units W IV Working Inverse Voltage
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BAW56
OT-23
BAV99
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1SS314
Abstract: No abstract text available
Text: 1SS314 TOSHIBA 1 SS31 4 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS. • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.50 (Typ.) U nit in mm + 0.2 1.2 5 - 0 . il 0*tH ÖÖ
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1SS314
1SS314
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baw56 sot-23
Abstract: BAV99 BAW56
Text: BAW56 Discrete POWER & Signal Technologies 9 National Semiconductor" BAW56 CONNECTION 1H SOT-23 13 * 1 DIAGRAMS ET High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* T A = 2 5 ° C unless o th e rw ise noted
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BAW56
OT-23
BAV99
baw56 sot-23
BAW56
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IN5288
Abstract: IN5305 IN5309 diode 0107MA IN5309 1N5298 equivalent CNS 022 1N5305 equivalent 1N5286 IN5283
Text: Microsemi Corp. J T he diode exp erts j SANTA ANA, CA SCOTTSDALE, AZ For more information call: 602 941-6300 / IVI*5 28 3 th ru M *5314 a n d C f5 2 8 3 th ru C f5 3 1 4 HIGH RELIABILITY CURRENT REGULATOR DIODES Features (* ) • A va ila b le as screen ed e q u iva le n ts using p refixes n oted b elo w :
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Cf5283
Cf5314
IN5288
IN5305
IN5309 diode
0107MA
IN5309
1N5298 equivalent
CNS 022
1N5305 equivalent
1N5286
IN5283
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Untitled
Abstract: No abstract text available
Text: D S7830/8830-F.N DESCRIPTION FEATURES The DS7830/DS8830 is a dual d iffe re n tia l line d riv e r th a t also pe rform s th e dual fo u rin p u t N A N D o r dual fo u r-in p u t AN D fu n c tio n . • Single 5 volt power supply • High speed • Diode protected outputs for termination
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S7830/8830-F
DS7830/DS8830
DS7830
DS8Q300
DS7820
DS7B30
DS7830
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode W tm SF10SC6 60V OUTLINE DA Feature • Tj=150°C • T j= 1 5 0°C • PRRSM T ’A ' ^ V Î ' I ' K i E • P rrsm • 7 1 Rating • Full M o ld e d [Æ -J U K • « lf f it E 1 . 5 k V « E • D ie le ctric S tre n g th 1 ,5kV
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SF10SC6
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