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    DIODE TFK Search Results

    DIODE TFK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE TFK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSML3710-GS08

    Abstract: No abstract text available
    Text: TSML3710 Vishay Telefunken GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PL–CC–2 SMD package. Features D SMT IRED with extra high radiant power D Low forward voltage


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    PDF TSML3710 TSML3710 TEMT3700 D-74025 TSML3710-GS08

    TSML3710-GS08

    Abstract: TEMT3700 TSML3710 diode 178 tfk tfk Phototransistor
    Text: TSML3710 Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PL–CC–2 SMD package. Features D SMT IRED with extra high radiant power D Low forward voltage


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    PDF TSML3710 TSML3710 TEMT3700 D-74025 TSML3710-GS08 TEMT3700 diode 178 tfk tfk Phototransistor

    TFK 450

    Abstract: diode 178 tfk IR diodes TFK 4 tfk 540 TFK diodes tfk Phototransistor TEMT3700 TSML3710 TSML3710-GS08
    Text: TSML3710 VISHAY Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC2 SMD package. Features • • • • • SMT IRED with extra high radiant power


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    PDF TSML3710 TSML3710 TEMT3700 D-74025 06-Jun-03 TFK 450 diode 178 tfk IR diodes TFK 4 tfk 540 TFK diodes tfk Phototransistor TSML3710-GS08

    23 TFK 001

    Abstract: No abstract text available
    Text: MCT6H/ MCT62H Vishay Semiconductors Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.


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    PDF MCT62H MCT62H D-74025 23 TFK 001

    Untitled

    Abstract: No abstract text available
    Text: CNY74–2H/ CNY74–4H Vishay Semiconductors Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead


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    PDF CNY74 CNY74-2H CNY74-4H 16-lead D-74025

    Untitled

    Abstract: No abstract text available
    Text: CNY74–2H/ CNY74–4H Vishay Telefunken Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package.


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    PDF CNY74 CNY74-2H CNY74-4H 16-lead D-74025

    CNY74

    Abstract: CNY74-4H TFK 03 Diode DIN 50014 STANDARD tfk Phototransistor CNY74-2H
    Text: CNY74–2H/ CNY74–4H Vishay Telefunken Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package.


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    PDF CNY74 CNY74-2H CNY74-4H 16-lead D-74025 TFK 03 Diode DIN 50014 STANDARD tfk Phototransistor

    Untitled

    Abstract: No abstract text available
    Text: CNY74–2H/ CNY74–4H Vishay Telefunken Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package.


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    PDF CNY74â CNY74-2H CNY74-4H 16-lead D-74025

    MCT62H

    Abstract: E-76222 Vishay Telefunken tfk
    Text: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using


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    PDF MCT62H MCT62H D-74025 E-76222 Vishay Telefunken tfk

    Untitled

    Abstract: No abstract text available
    Text: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using


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    PDF MCT62H MCT62H D-74025

    3 tfk 206

    Abstract: tfk Phototransistor TFK 201 DIN 50014 STANDARD Vishay Telefunken tfk transistor MCT62H tfk order
    Text: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using


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    PDF MCT62H MCT62H 3 tfk 206 tfk Phototransistor TFK 201 DIN 50014 STANDARD Vishay Telefunken tfk transistor tfk order

    ERG75

    Abstract: T151 T760 T810 A23G
    Text: ERG75 45A : Outline Drawings FAST RECOVERY DIODE Features • t — Pl aner chip • Soft recovery type • Stud mounted : Applications • Switching power supplies • 'f-av't— Free-wheel diode • Others. M axim um Ratings and Characteristics '• Absolute Maximum Ratings


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    PDF ERG75 ERG75 eBTB30Â EaT05 I95t/R89) T151 T760 T810 A23G

    1FI250B-060

    Abstract: No abstract text available
    Text: 1 FI250B-060 250a ^ • *± i W ’+ S i : O u tlin e D r a w in g s FAST RECOVERY DIODE MODULE ■ 4# : Features Short Reverse Recovery Time • t&mimtfm.'M Variety of Connection Menu •mm Insulated Type I Applications • Arc-Welders • Kffl • Free-Wheeling Diode


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    PDF FI250B-060 50/60HZ 300C30C3 1FI250B-060

    S2L20

    Abstract: No abstract text available
    Text: P y + v -w u s K tf-K - P X ^ - K U type Super Fast Recovery Diode Axial Diode • W f5\|->£I2I O U T L IN E D IM E N S IO N S S2L20U 200V 1.5A ■ R A T IN G S Absolute Maximum Ratings m ~~-—-_ ££ S3 E3 bLTt" Symbol g Item _ _ _ C onditions


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    PDF S2L20U S2L20

    semikron skiip 1242 gb 120

    Abstract: SKiiP 1242 GB 120 . 407 CTV N 407 Diode SKIIP DRIVER 1242 F 407 Diode
    Text: s e M IK R O n SKiiP 1242 GB 120 - 407 CTV Absolute Maximum Ratings Symbol | Conditions 1> Values Units 12 0 0 V 900 V 1200 A °c V A A A kA2s IQBT & Inverse Diode V c es V c c 9 lc T i3) Viso!41 If I fm I fsm A Diode) Operating DC link voltage Theatsink —2 5 °C


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    PDF 900tion semikron skiip 1242 gb 120 SKiiP 1242 GB 120 . 407 CTV N 407 Diode SKIIP DRIVER 1242 F 407 Diode

    TFK 03 Diode

    Abstract: diode s .* tfk S3L20 diode tfk s DIODE s3l20u
    Text: P — T A rv -W U S K tf-K K U type Super Fast Recovery Diode Axial Diode • O U T L IN E D IM E N S IO N S S3L20U 2 0 0 V 3A ■ R A TIN G S Absolute Maximum Ratings * IE # a Item Symbol a ffir m T yp e No. ■—-_ a O perating J u n c tio n Tem perature


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    PDF S3L20U S3L20U 50HzIE3£ TFK 03 Diode diode s .* tfk S3L20 diode tfk s DIODE s3l20u

    tfk 731

    Abstract: TFK BPW 41 N 74140 CQY 38 CQY 66 Fotodiode TFK 925 diode tfk diode s .* tfk Scans-0010327
    Text: CQY 38 H 'W GaUliumarsenid-Lumineszenzdiode GaAs Infrared Emitting Diode Anwendung: Strahlungsquelle im nahen Infrarot-Bereich Application: Radiation source in near infrared range Besondere Merkmale: Features: • Metallsockel mit Kunststofflinse • Metal base with plastic lens


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    cv 1924

    Abstract: HM-TR F760 ERC80-004 T151 T460 T810 T930 VU48
    Text: ERC80-004 5A '> 3 SCHOTTKY BARRIER DIODE I Features • ttV F Low V F Super high speed switching. Connection Diagram High reliability by planer design. • ElSs I Applications High speed power switching. Maximum Ratings and Characteristics • £ * * * * $ * * : Absolute Maximum Ratings


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    PDF ERC80-004 SC-46 500ns e3TB30Â I95t/R89 Shl50 cv 1924 HM-TR F760 T151 T460 T810 T930 VU48

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    TFK 715

    Abstract: BAW56S
    Text: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 Q62702-A1253 Package 2/5 = C2 3/6 = A1/2 SOT-363


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    PDF Q62702-A1253 OT-363 100ns, TFK 715 BAW56S

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    diode tfk s 220

    Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
    Text: 17E I I B^SDDRb ODD^bS^ 3 • m ilF iy iim iM electronic Crt*tiv«1«chnolo$tt ALGG i l ? ■ TFK 3080 D TELEFUNKEN ELECTRONIC [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T-33-3£~ Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)


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    PDF S1000 O888E T0126 15A3DIN diode tfk s 220 tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321