Untitled
Abstract: No abstract text available
Text: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm
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Original
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T8514VB
2002/95/EC
2002/96/EC
T8514VB
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm
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Original
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T8514VB
2002/95/EC
2002/96/EC
T8514VB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm
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Original
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T8514VB
2002/95/EC
2002/96/EC
T8514VB
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm
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Original
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T8514VB
2002/95/EC
2002/96/EC
T8514VB
11-Mar-11
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PDF
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T8514VB
Abstract: No abstract text available
Text: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm
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Original
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T8514VB
2002/95/EC
2002/96/EC
T8514VB
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: T8514VB www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm
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Original
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T8514VB
T8514VB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
|
Untitled
Abstract: No abstract text available
Text: T8514VB www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm
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Original
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T8514VB
T8514VB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Fast Recovery Diodes T-Modules , 40 A/70 A/85 A FEATURES • Fast recovery time characteristics • Electrically isolated base plate • 3500 VRMS isolating voltage • Standard JEDEC package • Simplified mechanical designs, rapid assembly
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Original
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T40HFL,
T70HFL,
T85HFL
E78996
2002/95/EC
11-Mar-11
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PDF
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40HF
Abstract: 70HFL lem module 100-S
Text: T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Fast Recovery Diodes T-Modules , 40 A/70 A/85 A FEATURES • Fast recovery time characteristics • Electrically isolated base plate • 3500 VRMS isolating voltage • Standard JEDEC package • Simplified mechanical designs, rapid assembly
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Original
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T40HFL,
T70HFL,
T85HFL
E78996
2002/95/EC
18-Jul-08
40HF
70HFL
lem module 100-S
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PDF
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40HF
Abstract: 70HFL 41E3-1
Text: T40HFL, T70HFL, T85HFL Series Vishay Semiconductors Fast Recovery Diodes T-Modules , 40 A/70 A/85 A FEATURES • Fast recovery time characteristics • Electrically isolated base plate • 3500 VRMS isolating voltage • Standard JEDEC package • Simplified mechanical designs, rapid assembly
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Original
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T40HFL,
T70HFL,
T85HFL
E78996
2002/95/EC
11-Mar-11
40HF
70HFL
41E3-1
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PDF
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Untitled
Abstract: No abstract text available
Text: T40HF., T70HF., T85HF., T110HF. Series Vishay Semiconductors Power Rectifier Diodes T-Modules , 40 A to 110 A FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly
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Original
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T40HF.
T70HF.
T85HF.
T110HF.
E78996
2002/95/EC
11-Mar-11
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PDF
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8563T
Abstract: No abstract text available
Text: T40HF., T70HF., T85HF., T110HF. Series Vishay Semiconductors Power Rectifier Diodes T-Modules , 40 A to 110 A FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly
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Original
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T40HF.
T70HF.
T85HF.
T110HF.
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
8563T
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PDF
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T85HF
Abstract: 8563T
Text: T40HF., T70HF., T85HF., T110HF. Series Vishay Semiconductors Power Rectifier Diodes T-Modules , 40 A to 110 A FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly
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Original
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T40HF.
T70HF.
T85HF.
T110HF.
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
T85HF
8563T
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PDF
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95313
Abstract: T40hf IFM 204
Text: T40HF., T70HF., T85HF., T110HF. Series Vishay Semiconductors Power Rectifier Diodes T-Modules , 40 A to 110 A FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly
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Original
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T40HF.
T70HF.
T85HF.
T110HF.
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
95313
T40hf
IFM 204
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PDF
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|
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8563T
Abstract: 40HF 70HF 85HF T110HF T40HF T70HF T85HF T110HF80 T70HF100
Text: T40HF., T70HF., T85HF., T110HF. Series Vishay Semiconductors Power Rectifier Diodes T-Modules , 40 A to 110 A FEATURES • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly
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Original
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T40HF.
T70HF.
T85HF.
T110HF.
E78996
2002/95/EC
11-Mar-11
8563T
40HF
70HF
85HF
T110HF
T40HF
T70HF
T85HF
T110HF80
T70HF100
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PDF
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SLIC TIP RING PTC surge
Abstract: L9510 ic 3524 internal block diagram ring detector T8531 T8532 T8536 TR57
Text: Data Sheet May 2002 L9520 POTS/DSL Enhanced Line Interface Low-Power SLIC and Ring Relay with Integrated Test Introduction • When paired with T8531/2 codec provides hardware and software for GR844 testing The Agere Systems Inc. L9520 is a combination fullfeature, ultralow-power SLIC, solid-state ringing
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Original
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L9520
T8531/2
GR844
68-pin
s32/F,
DS02-206ALC-1
DS02-206ALC)
SLIC TIP RING PTC surge
L9510
ic 3524 internal block diagram
ring detector
T8531
T8532
T8536
TR57
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PDF
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13002
Abstract: No abstract text available
Text: PL IA NT CO M *R oH S T85 5 007 4 Features Applications • Superior circuit protection ■ Ethernet ports ■ Overcurrent and overvoltage protection ■ Protection modules and dongles ■ Blocks surges up to rated limits ■ Process control equipment ■ High-speed performance
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: PL IA NT CO M *R oH S T85 5 007 4 Features Applications • Superior circuit protection ■ Ethernet ports ■ Overcurrent and overvoltage protection ■ Protection modules and dongles ■ Blocks surges up to rated limits ■ Process control equipment ■ High-speed performance
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: PL IA NT CO M *R oH S T85 5 007 4 Features Applications • Superior circuit protection ■ Ethernet ports ■ Overcurrent and overvoltage protection ■ Protection modules and dongles ■ Blocks surges up to rated limits ■ Process control equipment ■ High-speed performance
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: PL IA NT CO M *R oH S T85 5 007 4 Features Applications • Superior circuit protection ■ Ethernet ports ■ Overcurrent and overvoltage protection ■ Protection modules and dongles ■ Blocks surges up to rated limits ■ Process control equipment ■ High-speed performance
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Original
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PDF
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232 GFP smd diode
Abstract: Diode SMD SJ 8C low noise amplifier amp 77 medical ultrasound guide smd type T3rd CLC425 CLC425A8B CLC425AIB CLC425AJE CLC425AJP
Text: Ultra Low Noise Wideband Op Amp SComlinear A National Semiconductor Company CLC425 APPLICATIONS: • instrumentation sense amplifiers • ultrasound pre-amps • magnetic tape & disk pre-amps • photo-diode transimpedance amplifiers • wide band active filters
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OCR Scan
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CLC425
CLC425
05nV/VHz,
OA-15
232 GFP smd diode
Diode SMD SJ 8C
low noise amplifier amp 77
medical ultrasound guide
smd type T3rd
CLC425A8B
CLC425AIB
CLC425AJE
CLC425AJP
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bRE D • b b S S ' m DD3QaflD 33T W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK655-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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OCR Scan
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BUK655-500B
O220AB
bbS3T31
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PDF
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diode t87
Abstract: No abstract text available
Text: £ -i K /D io d es 1SS245 1S S 245 Silicon Epitaxial Planar High-Voltage Switching Diode • Dimensions U n it: mm 1) ra H U T' <fc -5 o 2) 3) /MS! (D O -3 5 )? * 3 0 t:-4AV(. 4) # 7 : * t W : ? * 3 0 • Features High dielectric strength. High reliability.
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OCR Scan
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1SS245
DO-35)
52mmte
T-80A
diode t87
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PDF
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2N1100 Power Transistor
Abstract: DTG-2400 2n4280 germanium transistor pnp 2n277 2N2912 2n58a DTG2400 2N2567 2n1039 2N5435
Text: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s
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OCR Scan
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DDDD141
2N58A
2N1073
2N2158
2N5325
2N143/13
2N1073A
2N2158A
2N5435
2N174A
2N1100 Power Transistor
DTG-2400
2n4280
germanium transistor pnp 2n277
2N2912
DTG2400
2N2567
2n1039
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PDF
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