IDG 600
Abstract: M61880FP 20P2N-A M61880
Text: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.
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M61880FP
REJ03F0068-0100Z
M61880FP
IDG 600
20P2N-A
M61880
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sod123 diode marking e1
Abstract: marking A2 diode SOD 123 a2 sod-123 1N4448W marking T5 diode marking A2 sod123
Text: SOD-123 Plastic-Encapsulate Diode 1N4448W FAST SWITCHING DIODE SOD-123 Features • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance 1.05 · · 2.70 1.6 Marking: T5
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OD-123
1N4448W
OD-123
020REF
500REF
sod123 diode marking e1
marking A2 diode SOD 123
a2 sod-123
1N4448W
marking T5
diode marking A2 sod123
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1N4448X SOD-523 FAST SWITCHING DIODE FEATURES MARKING: T5 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage
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OD-523
1N4448X
OD-523
100mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes 1N4448W SOD-123 FAST SWITCHING DIODE FEATURES MARKING: T5 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage
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OD-123
1N4448W
OD-123
100mA
150mA
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Untitled
Abstract: No abstract text available
Text: Philips Semicon tTE ] bbS3^31 00Sbl7fl T50 H A P X Silicon planar epitaxial Product specification N AP1E:R PHILIPS/DISCRETE BAL74 high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching
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00Sbl7fl
BAL74
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Untitled
Abstract: No abstract text available
Text: UC1610 UC2610 UC3610 UNITRODE Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
capC1610
UC3610
100mA
030S4
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Untitled
Abstract: No abstract text available
Text: SONY SLP323V High Power Density 1 W Laser Diode Package Outline_Unit : mm Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method*’ . Compared to the R tr« SLD300 Series, this laser diode has a high brightness
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SLD323V
SLD300
SLP323V
SLD323V
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D4JG
Abstract: No abstract text available
Text: NIS6111 Product Preview ORing Diode Ultra Efficient, High Speed Diode The NIS6111 ORing diode is a high speed, high efficiency, hybrid rectifier, designed for low voltage, high current systems, such as those required for today’s digital circuits. It couples a high speed
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NIS6111
PLLP32
488AC
NIS6111/D
D4JG
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D4JG
Abstract: No abstract text available
Text: NIS6111 Product Preview Better ORing Diode Ultra Efficient, High Speed Diode The NIS6111 Better ORing diode is a high speed, high efficiency, hybrid rectifier, designed for low voltage, high current systems, such as those required for today’s digital circuits. It couples a high speed
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NIS6111
PLLP32
488AC
NIS6111/D
D4JG
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BZT52B5V6S Preliminary DIODE SURFACE MOUNT SILICON ZENER DIODE DESCRIPTION The UTC BZT52B5V6S is a surface mount silicon Zener Diode using UTC’s advanced technology to provide customers with low power dissipation. The UTC BZT52B5V6S is universally applied in Automated
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BZT52B5V6S
BZT52B5V6S
200mW
BZT52B5V6SL-CB2-R
BZT52B5V6SG-CB2-R
OD-323
QW-R601-065
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BZT52
Abstract: t56 marking zener die diode ZENER SOD323 BZT52 SOD-323
Text: UNISONIC TECHNOLOGIES CO., LTD BZT52 Preliminary DIODE SURFACE MOUNT SILICON ZENER DIODE DESCRIPTION The UTC BZT52 is a surface mount silicon Zener Diode using UTC’s advanced technology to provide customers with low power dissipation. The UTC BZT52 is universally applied in Automated Assembly
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BZT52
BZT52
200mW
OD-323
BZT52L-CB2-R
BZT52G-CB2-R
QW-R601-065
t56 marking
zener die diode
ZENER SOD323
BZT52 SOD-323
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the calculation of the power dissipation for the igbt and the inverse diode in circuits
Abstract: AN4505 AN4506 Calculation of major IGBT operating parameters
Text: AN4504 Application Note AN4504 IGBT Ratings And Characteristics Application Note Replaces September 2000 version, AN4504-3.0 Load AN4504-3.1 July 2002 PNP VD applications this diode acts as a free-wheeling diode or as a protection diode. Fig. 2 illustrates the packages used by Dynex
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AN4504
AN4504
AN4504-3
the calculation of the power dissipation for the igbt and the inverse diode in circuits
AN4505
AN4506
Calculation of major IGBT operating parameters
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1N4448WS
Abstract: No abstract text available
Text: SOD-323 Plastic-Encapsulate Diode 1N4448WS FAST SWITCHING DIODE SOD-323 Features Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance 1.00 • · · · 1.70 0.30 1.30 Marking: T5 2.65 Unit:mm Maximum Ratings @ TA = 25°C unless otherwise specified
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OD-323
1N4448WS
OD-323
019REF
475REF
1N4448WS
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Untitled
Abstract: No abstract text available
Text: 1N4448WS PB FREE PRODUCT SURFACE MOUNT FAST SWITCHING DIODE FEATURES Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z z For General Purpose Switching Applications z High Conductance SOD-323 MARKING: T5 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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1N4448WS
OD-323
100mA
150mA
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cso5
Abstract: MEL12 2SC 1209 1996P
Text: DATA SHEET LASER DIODE NDL7670P 1 310 nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP MQW-DFB LASER DIODE MODULE DESCRIPTION NDL7670P is a 1 310 nm DFB Distributed Feed-Back laser diode, that has a newly developed Multiple Quantum Well (MQW) structure, butterfly package module with optical isolator.
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NDL7670P
NDL7670P
SM-9427S2S
NDL7680P
NDL7650P
NDL7660P
NDL7672P
NDL7673P
cso5
MEL12
2SC 1209
1996P
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BAT54
Abstract: No abstract text available
Text: BAT54 CDU SCHOTTKY BARRIER DIODE BAT54 single diode PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking B A T54 -4L 0 .1 4 -|p TÔ9 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE -W ABSOLUTE MAXIMUM RATINGS Continuous reverse voltage Forward current Forward voltage at Ip = 10 mA
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BAT54
BAT54
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 483401 SFH 483406 GaAlAs-LASER DIODE 1000 mW WITH FC-CONNECTOR 750 m W 2 Package Dimensions in mm SFH 483401 1 2 3 4 SFH 483406 11.7 ±0 3 NC NTC NTC laserdiode Cathode 5 6 7 8 Laserdiode Anode Monitor Diode Anode Monitor Diode Cathode NC ' 59
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A53b3Eb
aE3b32b
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Untitled
Abstract: No abstract text available
Text: ERE24* ERE74 2 oa FAST RECOVERY DIODE I Features • Glass passivated chip • 7 *9 vj Y16 Stud mounted : Applications + .T A 'V l - 's y ^ 31 • ?-3 'y '< — Switching power supplies Free-wheel diode fr 'fJ ir • •' <7— Snubber diode • Others. Maximum Ratings and Characteristics
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ERE24*
ERE74
I95t/R89)
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pj 71 diode
Abstract: No abstract text available
Text: SKN 71 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode 3$>@ 3$$@ =H$@> V 0Y2 M T5,Z65.5 &,*.% N ' 7):+6:.). )/%',+6):X 3 C22 A22 0E22 0C22 3 C22 A22 0E22 0C22 >IG [0B2C >IG [0B2A >IG [0B0E >IG [0B0C =HM3 V [2 M T(6:¥ 0A2] ;7 V 0EY ^OX >I$ [0B2C >I$ [0B2A
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Minn
Abstract: No abstract text available
Text: DATA SHEET PHOTO DIODE NDL5551P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS ^50 //m InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5551P Series are InGaAs avalanche photo diode modules with multimode fiber. They are designed for detectors of long wavelength transmission systems and cover the wavelength range between 1 000 and 1 600 nm.
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NDL5551P
GI-50/125)
NDL5551P1
NDL5551P2
NDL5551P
GI-50/125
Minn
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Untitled
Abstract: No abstract text available
Text: SONY SLD322XT High Power Density 0.5 W Laser Diode D escription 3ackage Outline Unit : mm The S L D 3 2 2 X T is a high power, gain-guided laser diode produced by M O C V D method*’ . Com pared lo the S L D 3 0 0 Series, this laser diode has a high brightness
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SLD322XT
3fl23fl3
002DlDfi
S3fl23fl3
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"Digital Comparators"
Abstract: computer mother board circuit diagram 2N3904 LM84 LM84CIMQA LM84CIMQAX A14 zener
Text: LM84 Diode Input Digital Temperature Sensor with Two-Wire Interface General Description The LM84 is a remote diode temperature sensor, Delta-Sigma analog-to-digital converter, and digital over-temperature detector with an SMBus interface. The LM84 senses its own temperature as well as the temperature of a target IC with a diode junction, such as a Pentium
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2N3904.
"Digital Comparators"
computer mother board circuit diagram
2N3904
LM84
LM84CIMQA
LM84CIMQAX
A14 zener
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marking t54
Abstract: 2pa30
Text: L BAT54 SCHOTTKY BARRIER DIODE BAT54 single diode PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BA T54 -4L J .Q 2.8 0.14 0.48 -*^p d 3§ 038 Pin configuration L 0.70 0.50 3 1= ANODE 2 = NC 3 = CATHODE t .4 2.6 2.4 1.2 R0.1 ÔÔÔ4T ii.8<r 0 .6 0 . 2.00
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BAT54
BAT54
marking t54
2pa30
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