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Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev A1, Page 1/42 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers
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QFN28
QFN28-5x5
D-55294
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Abstract: No abstract text available
Text: Laser Diodes y inar m i l pre iC-HT DUAL CW LASER DIODE DRIVER FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ APPLICATIONS ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers
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QFN28
QFN28-5x5
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Untitled
Abstract: No abstract text available
Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode
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QFN28
QFN28-5x5
D-55294
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Untitled
Abstract: No abstract text available
Text: FFA60UP30DN 60 A, 300 V, Ultrafast Dual Diode Features • Ultrafast Recovery, Trr = 55 ns @IF = 30 A Description • Max. Forward Voltage, VF = 1.5 V (@ TC = 25°C) • Reverse Voltage: VRRM = 300 V The FFA60UP30DN is an ultrafast diode with low forward
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FFA60UP30DN
FFA60UP30DN
TT3P0-003.
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Text: FFA60UA60DN UItrafast ll Dual Diode Features Description • Ultrafast Recovery, Trr = 90ns @ IF = 30 A The FFA60UA60DN is an ultrafast ll dual diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of
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FFA60UA60DN
FFA60UA60DN
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F60UP30DN
Abstract: No abstract text available
Text: FFA60UP30DN 60 A, 300 V, Ultrafast Dual Diode Description Features • Ultrafast Recovery, Trr = 55 ns @IF = 30 A The FFA60UP30DN is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a
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FFA60UP30DN
FFA60UP30DN
TT3P0-003.
F60UP30DN
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Text: FFA40UP35S 40 A, 350 V Ultrafast Diode Features Description • Ultrafast Recovery, trr < 55ns @ IF = 40 A The FFA40UP35S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching
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FFA40UP35S
FFA40UP35S
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FFA60UP20DN
Abstract: No abstract text available
Text: FFA60UP20DN 60 A, 200 V, Ultrafast Dual Diode Features Description • • • • • The FFA60UP20DN is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other
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FFA60UP20DN
FFA60UP20DN
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Text: FFA60UP20DN 60 A, 200 V, Ultrafast Dual Diode Features Description • • • • • The FFA60UP20DN is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other
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FFA60UP20DN
FFA60UP20DN
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Text: PL IA NT Features CO M • *R oH S ■ ■ Applications RoHS compliant* Protects 1 line ESD protection 30 kV max. ■ ■ ■ ■ RS-232, RS-422 & RS-423 data lines Portable electronics Wireless bus protection Control & monitoring systems CDSOT23-T03LC~T36LC — Low Capacitance TVS Diode Array Series
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RS-232,
RS-422
RS-423
CDSOT23-T03LC
T36LC
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IN4003
Abstract: 1N4003A 175t2
Text: 7020^^^ GDOTGlb T03 iRHn Page ROHrn Speculation Products ] 01 Type Glass Sealed Rectifying Diode IN4003A Glass Sealed Rectifying Diode 1. PRODUCTS Silicon diffused junction 1N4003A 2. TYPE 3. APPLICATION General rectification 'Glass seal 4. FEATURES 'Snail size
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1N4003A
1N4003A
D0-41)
175t2
-65-175t
IN4003
175t2
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BAS32
Abstract: diode bas32 IEC134 BAS32 sod80
Text: 41E D 711002b 00533bt. eSPHIN PHILIPS INTERNATIONAL BAS32 T-03-09 HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications. This SM diode is a leadless diode in a h e rm e tica lly sealed SOD- 8 O envelope w ith tin -p la te d m etal discsat
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711002b
00533bt.
BAS32
T-03-09
diode bas32
IEC134
BAS32 sod80
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BA221
Abstract: IR 10D DIODE
Text: Philips Semiconductors Product specification High-speed diode BA221 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BA221 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
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BA221
DO-35)
BA221
711Dfi2b
ilDfl437
IR 10D DIODE
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BY509
Abstract: BY 509 diode BY509 z650 T0309
Text: _ ~ N AMER PHILIPS/DISCRETE — _LI_ QbE D • ^53=131 OOllQÌS 4 b y oua T-03-09 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODE E.H.T. rectifier diode in a glass envelope intended for use in high-voltage applications such as multi
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T-03-09
7Z82240
BY509
BY 509
diode BY509
z650
T0309
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DD50R
Abstract: No abstract text available
Text: O rd e rin g n u m b e r: EN 2800A _ DD50R Diffused Junction Type Silicon Diode Ultrahigh-Definition Display Damper Diode Features • High breakdown voltage Vrrm : 1500V . • High reliability. • Capable of being mounted easily and dissipating heat rapidly because of one-point fixing type plastic
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DD50R
DD50R
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transistor t05
Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
Text: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A
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5flMfl35g
DETRdf\J515TQR
2N327A
N328A
2N329A
2N330
2N726
2N863
2N939
2N945
transistor t05
N2907
N2907A
2N3040
t05 transistor
2N2927A
2N2280
2N3064
2N1921
2N3058
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Untitled
Abstract: No abstract text available
Text: O K I electronic components OLP223 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The O LD 223 is a high-output GaA IAs infrared light em ission diode sealed with flat glass in a TO -18 case. Its light em ission w ave peaks at 910 nm. Because o f its high reliability, theO L D 223 can
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OLP223
910nm
OLD223
001flfl34
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BY509
Abstract: diode BY509
Text: _ U _ N AMER PHILIPS/DISCRETE QbE D ^53= 131 D 0H 01S 4 • EJYDUa T-03-09 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODE E.H.T. rectifier diode in a glass envelope intended fo r use in high-voltage applications such as m ulti pliers, e.g. tripler circuits. The device features non-snap-off characteristics. Because o f the smallness of
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T-03-09
0011CH7
BY509
7Z82239
bL53T31
BY509
diode BY509
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE = TOD D 0800160 AMPEREX, 90D 10652 D • ^ 5 3 1 3 1 OOlQbSS S SLATERSVILLE t-03-M PHSD51 JV SCHOTTKY-BARRIEB RECTIFIER DIODE High-efficiency rectifier diode in a DO—5 metal envelope, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. It is intended for use in low
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PHSD51
bb53T31
Lb53T31
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BAV45
Abstract: No abstract text available
Text: 5bE D TllD öSh GQ402Ö 1 4Ö3 • PHIN BAV45 » SbE 3> PHILIPS INTERNA TI O NA L T - 0 3 - 0 * 1 PICOAMPERE DIODE Silicon diode in a metal envelope. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. It is intended for clamping,
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BAV45
711002b
711Qfl2b
T-03-09
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BY509
Abstract: diode BY509 GQ11G1S 7Z82239 T-03-09 T0309
Text: mz N AMER PHILIPS /DISCRETE QbE D u_ _ ^53^31 GQ11Q1S 4 • : B YO ua T-03-09 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODE E .H .T . rectifier diode in a glass envelope intended fo r use in high-voltage applications such as m u lti pliers, e.g. tripler circuits. The device features non-snap-off characteristics. Because o f the smallness of
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GQ11G1S
T-03-09
BY509
7Z82240
BY509
diode BY509
7Z82239
T-03-09
T0309
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2SC3953
Abstract: TRANSISTOR T0220 2SC3597
Text: Horizontal deflection output composite transistor Absolute maximum ratings _ . I Package . Application T IT Vcbo Vcbo nn (V) HPA72R* T03PBL °"!fk (wilh high-speed damper diode) HPA100R T03PBL “ H PA.M T03PBL * “ “ “ Ä T Vceo Vceo lc >c Electrical characteristics (T, = 25 deg. C)
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HPA72R*
T03PBL
HPA100R
2SC4256
2SC4257
2SC3675
2SC3676
2SC4450
2SC3953
TRANSISTOR T0220
2SC3597
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n925
Abstract: No abstract text available
Text: Ordering number : EN2583A smyo i i No.2583A _ S B 8 - 1 8 Schottky Barrier Diode Twin Type • Cathode Common 180V, 8A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers)
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EN2583A
N92583-3/3
n925
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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