DIMMABLE dali
Abstract: led constant current driver 500mA WU-M-293-SB x79x33
Text: A New Lighting Experience • overload protection • short circuiting protection • SELV equivalent LED Constant Current Drivers • 50,000 hrs service life time LEDLine ECX Konstantstromquellen ECX GB 1/5 January, 2011 Electronic converters for LED modules
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350mA/42W
DIMMABLE dali
led constant current driver 500mA
WU-M-293-SB
x79x33
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WU-M-293-SB
Abstract: EN 55015 class B 18619 DIMMABLE dali WU-M-392 x79x33 WU-M-293-W
Text: A New Lighting Experience • overload protection • short circuiting protection • SELV equivalent LED Constant Current Drivers • 50,000 hrs service life time LEDLine ECX Konstantstromquellen ECX GB 1/5 November, 2010 Electronic converters for LED modules
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350mA/42W
WU-M-293-SB
EN 55015 class B
18619
DIMMABLE dali
WU-M-392
x79x33
WU-M-293-W
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220V LED Bulb circuit
Abstract: SY5120 SY7000-27-2F-Q SY7000-27-1F-Q AN200-KM10 SY9000-27-2F-Q KQ2P-04 SY5220 SY5000-27-1F-Q eb 102
Text: Body Ported Valves Series SY3/5/7/9000 Body Ported Valves Series SY3/5/7/9000 Features Wide range of sizes Choice of electrical entries Body ported valves can be manifold mounted One touch fittings for direct connection How to Order SY 5 1 20 5 LO Q 01F
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SY3/5/7/9000
SY3000
SY5000
SY7000
SY9000
220V LED Bulb circuit
SY5120
SY7000-27-2F-Q
SY7000-27-1F-Q
AN200-KM10
SY9000-27-2F-Q
KQ2P-04
SY5220
SY5000-27-1F-Q
eb 102
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1762A Bi-CMOS IC LV58063MX Step-down Switching Regulator Overview LV58063MX is a 1ch step-down switching regulator. 0.13Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed.
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ENA1762A
LV58063MX
LV58063MX
200mil)
A1762-5/5
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LV58063MX
Abstract: CDRH105RNP-100NC 62510 SBM30-03
Text: Ordering number : ENA1762A Bi-CMOS IC LV58063MX Step-down Switching Regulator Overview LV58063MX is a 1ch step-down switching regulator. 0.13Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed.
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ENA1762A
LV58063MX
LV58063MX
200mil)
A1762-5/5
CDRH105RNP-100NC
62510
SBM30-03
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1762A Bi-CMOS IC LV58063MX Step-down Switching Regulator Overview LV58063MX is a 1ch step-down switching regulator. 0.13Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed.
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ENA1762A
LV58063MX
LV58063MX
200mil)
A1762-5/5
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PDF
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VVQ4000-50B-C8
Abstract: SMC - SY5120 SY3120-5LOU-C6-Q jst connector JST p-2 58A03 SY3140-5LOU-Q SY5120-L-C6 DIN43650C 664AB JISC0704
Text: CAT.EUS11-83 B -UK 5 Port Solenoid Valve Power Consumption With Power Saving Circuit SY Series Improved pilot valve Pilot valve cover is stronger using stainless steel. Mounting thread is also reinforced from size M1.7 to M2. Flow Characteristics Series
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EUS11-83
SY3000
SY5000
SY7000
SY9000
G15-10-01)
ARBY3000
ARBY3000-05--2
VVQ4000-50B-C8
SMC - SY5120
SY3120-5LOU-C6-Q
jst connector JST p-2
58A03
SY3140-5LOU-Q
SY5120-L-C6
DIN43650C
664AB
JISC0704
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PDF
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TPC 8028
Abstract: MAB 2650 A HD6417622BP80 PJ0D* DIODE HD6417622BP100 HD6417622FL80 PDIUSBP11 SH7622 Philips 2222 168 SH2-DSP programming manual
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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whatsoeve53
FP-208C)
FP-208C
SH7622
TPC 8028
MAB 2650 A
HD6417622BP80
PJ0D* DIODE
HD6417622BP100
HD6417622FL80
PDIUSBP11
Philips 2222 168
SH2-DSP programming manual
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PDF
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TPC 8028
Abstract: pf7dt Hitachi DSAUTAZ006 xab 0133 HA200
Text: Hitachi SuperH RISC engine SH7622 Hardware Manual ADE-602-212 Rev. 1.0 1/25/01 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in
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SH7622
ADE-602-212
FP-208C
FP-208C)
SH7622
TPC 8028
pf7dt
Hitachi DSAUTAZ006
xab 0133
HA200
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PDF
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15HEX
Abstract: Hitachi DSA00279 SH2-DSP programming manual
Text: Hitachi SuperH RISC engine SH7622 Hardware Manual ADE-602-212A Rev. 2.0 9/19/01 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in
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SH7622
ADE-602-212A
FP-208C
FP-208C)
SH7622
15HEX
Hitachi DSA00279
SH2-DSP programming manual
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PDF
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TPC 8028
Abstract: a888 513 CKE 2009 PJ0D* DIODE 2015 static ram HD6417622BP100 induction heating 2010 LS 2027 nls pf5 TAD 2073
Text: Hitachi SuperH RISC engine SH7622 Hardware Manual ADE-602-212A Rev. 2.0 9/19/01 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in
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SH7622
ADE-602-212A
ever53
FP-208C)
FP-208C
SH7622
TPC 8028
a888 513
CKE 2009
PJ0D* DIODE
2015 static ram
HD6417622BP100
induction heating 2010
LS 2027
nls pf5
TAD 2073
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PDF
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HD6417622FL80
Abstract: PDIUSBP11 SH7622 J-158 HA200 db311
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003.
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whatsoeve53
FP-208C)
FP-208C
SH7622
HD6417622FL80
PDIUSBP11
J-158
HA200
db311
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PDF
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diode sy 170
Abstract: diode sy-170
Text: Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. Tne device is Intended for use In
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BUK581-60A
OT223
diode sy 170
diode sy-170
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telefunken transistoren
Abstract: service-mitteilungen halbleiter telefunken funkschau Radio Fernsehen Elektronik Servicemitteilungen telefunken dioden VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN stassfurt diode sy 526
Text: SERVICE-MITTEILUNGEN V EB IN D U S T R IE V E R T R IE B R U N D F U N K U N D FE R N S E H E N AUSGABE: r a d i o -television 675 J ü N I S S IT Ï 1-6 Der "CHASAR - 401" wird aus der Sowjetunion importiert« Ss handelt sich bei diesem Gerät um einen Kofferempfänger der unteren Preisgruppe. Die tech
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13t681·
III/18/379
telefunken transistoren
service-mitteilungen
halbleiter telefunken
funkschau
Radio Fernsehen Elektronik
Servicemitteilungen
telefunken dioden
VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN
stassfurt
diode sy 526
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PDF
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transistor BU 5027
Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Text: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im
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KT315
Indikatoransteuerung02
136/G
ASZ1016
transistor BU 5027
transistor KT 816
transistor SD 5024
J 5027-R
bu 5027
KT 817 transistor
Transistor KU 607
MDA 2020
RFT e 355 d
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PDF
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VEB mikroelektronik
Abstract: Datenblattsammlung SY 625 V40511D mikroelektronik datenblattsammlung Diode KD 514 KD512A mikroelektronik Berlin "halbleiterwerk frankfurt" VEB Kombinat mikroelektronik Erfurt
Text: \ñ ñ lB rW *m X S á B Í4 ti& * 311' ill c e l e k t r o n i k - b a u e i e m e n t e ? 2/86 . Die vorliegenden Datenblätter beinhalten Listen i Infonmatic-aen ü b e r elektronischer Sie können abgeleitet beinhalten n ur z u r Information» Halbleiterbauelemente
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PDF
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Diode SY 345
Abstract: STR F 6234 VEB mikroelektronik TRANSISTOR KT 837 mikroelektronik RFT STRALSUND RFT KB 100 Mitteilung VEB RFT EY500 aiwa tpr
Text: SERVICE-MITTEILUNGEN VEB RFT I N D U S T R I E V E R T R I E B RUNDFUNK UND FER N SE H EN ¡RimnM l r a d io - t e / e v is io n | Ausgabe 1988 9-11 Seite 1 - 12 1. Mitteilung aus dem VEB RFT Industrievertrieb RuF Leipzig, Bereich S Raduga 726/730 - Neues Äquivalent für den Hochspannungsgleich
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PDF
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VEB mikroelektronik
Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Text: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP
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57AHNSDORP
VEB mikroelektronik
Mikroelektronik Information Applikation
mikroelektronik Heft 12
Radio Fernsehen Elektronik 1977 Heft 9
information applikation
information applikation mikroelektronik
mikroelektronik DDR
Halbleiterbauelemente DDR
aktive elektronische bauelemente ddr
mikroelektronik Heft
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PDF
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pubs
Abstract: CI 556
Text: SYM53C895 PCI-Ultra2 SCSI 1/O Processor with LVDlink Universal Transceivers D ata Manual Version 3.0 MS9983I T he products described in this publication are products of Symbios, Inc. SC R IPT S and LVDlink are tradem arks, and TolerA N T is a registered tradem ark,
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SYM53C895
MS9983I
Fast-20
277199X.
Fast-40
Index-10
53C895
Index-11
pubs
CI 556
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PDF
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Untitled
Abstract: No abstract text available
Text: mtefsil RFG30P05, RFP30P05, RF1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives
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RFG30P05,
RFP30P05,
RF1S30P05SM
TA09834.
RFG30P0S,
RF1S30P05SM
AN7260.
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PDF
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CS-299D
Abstract: No abstract text available
Text: 2A Dual H-Bridge Driver D escription The CS-298 is a p o w e r in teg rated circuit cap ab le of d riv in g resistive an d in d u c tive lo ad s su ch as relays, so len o id s, DC a n d ste p p in g m otors. This device is a q u a d p u s h -p u ll d riv e r half H -b rid g e
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CS-298
CS-298
CS-299D
CS-298M15
CS-298MV15
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PDF
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53C876
Abstract: 53C8xx RST32 53c87 53C885
Text: SYM53C876/876E PCI-Dual Channel SCSI Multi-Function Controller D ata Manual V ersio n 2.0 o I N C R E A S I N G SCSI R E L I A B I L I T Y r lB H R N T A C T I V E T76972I I 197-IMH N E G A T I O N T E C H N O L O G Y T he products described in this publication are products of Symbios Logic Inc.
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SYM53C876/876E
T76972I
197-IMH
Fast-20
277-199X
Index-13
53C876
53C8xx
RST32
53c87
53C885
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PDF
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PMI BUF03
Abstract: RG58 COAXIAL Precision Monolithics, Inc
Text: p m OP-61 D WIDE-BANDWIDTH, PRECISION OPERATIONAL AMPLIFIER A v&10 M o n o îith u s ! n FEATURES • • • • • • High Gain-Bandwidth Product. 200MHz Typ Low Voltage Noise. ZAnVlVHz @ 1 kHz
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OP-61
200MHz
330ns
75V/mVTyp
100fiVTyp
200MHz.
330ns,
OP-61
PMI BUF03
RG58 COAXIAL
Precision Monolithics, Inc
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PDF
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PMI OP AMP
Abstract: No abstract text available
Text: OP-61 WIDE-BAND WIDTH, PRECISION OPERATIONAL AMPLIFIER A va 10 P r e c is io n M o n o li th i c s In c. FEATURES • High G ain-B andw idth P ro d u c t. 200MHz Typ • Low Voltage N o is e . 3.4nV/ \/R z @ 1 kHz
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OP-61
200MHz
330ns
75V/mV
200MHz.
PMI OP AMP
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PDF
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