DIODE SS10 Search Results

MCH3339

Abstract: MCH5823 SS10015M
Contextual Info: MCH5823 Ordering number : ENN7757 MCH5823 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a P-Channel Silicon MOSFET MCH3339 and a Schottky Barrier Diode (SS10015M)

D1004

Abstract: MCH3405 MCH5811 SS10015M
Contextual Info: MCH5811 Ordering number : ENN8059 MCH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3405 and a schottky barrier diode (SS10015M)

ss1001

Abstract: MCH3445 MCH5812 SS10015M
Contextual Info: MCH5812 Ordering number : ENN7998 MCH5812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3445 and a schottky barrier diode (SS10015M)

86886

Abstract: diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001
Contextual Info: CPH5846 Ordering number : EN8688 SANYO Semiconductors DATA SHEET CPH5846 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET MCH3309 and a Schottky Barrier Diode (SS10015M)

SS1001

Abstract: ENA0781A MCH5837 SS10015M
Contextual Info: MCH5837 Ordering number : ENA0781A SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a schottky barrier diode SS10015M

SS1001

Abstract: MCH5837 mosfet yb SS10015M TA72
Contextual Info: MCH5837 Ordering number : ENA0781 SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a schottky barrier diode SS10015M

SS1001

Abstract: MCH3307 MCH5836 SS10015M
Contextual Info: MCH5836 Ordering number : ENA0780A SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)

MCH3307

Abstract: MCH5836 SS10015M
Contextual Info: MCH5836 Ordering number : ENA0780 SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)

SS10015M

Abstract: VEC2820
Contextual Info: VEC2820 Ordering number : ENA0849 SANYO Semiconductors DATA SHEET VEC2820 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET and a schottky barrier diode SS10015M contained in one

Contextual Info: CPH5848 Ordering number : EN8690 SANYO Semiconductors DATA SHEET CPH5848 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Applications • DC / DC converters. Features • Composite type with a P-Channel Sillicon MOSFET MCH3306 and a Schottky Barrier Diode (SS10015M)

PV-Module

Contextual Info: PV-Module Table of Contents Concentrators, Bypass Diode. 3 Crystalline, Junction Box. 4

SS1003M3

Contextual Info: SS1003M3 Ordering number : ENN8372 SS1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=0.35mA, VF max=0.43V).

Contextual Info: SS10015M Ordering number : ENN7979 Schottky Barrier Diode SS10015M 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.32V) (IF=0.5A, VF max=0.35V).

Contextual Info: SS1030 SCHOTTKY BARRIER DIODE • General rectification • Small power mold type PMDU • Low IR • High reliability • Silicon epitaxial planar APPLICATIONS ABSOLUTE MAXIMUM RATINGS ( TA = 25OC ) PARAMETER SYMBOL LIMITS Reverse Voltage (repetitive peak)

MARKING G5

Abstract: SS1040 SS1040-T1 schottky diode sod-123 marking code 120
Contextual Info: SS1040 WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application C ! Plastic Material – UL Recognition Flammability

Contextual Info: SS1020 / SS1040 WTE POWER SEMICONDUCTORS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application C ! Plastic Material – UL Recognition Flammability

SS1003M3

Contextual Info: SS1003M3 Ordering number : EN8372A SANYO Semiconductors DATA SHEET SS1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=1.0A, VF max=0.43V).

Contextual Info: SS1040 WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features  Low Turn-on Voltage   Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability

"Marking SC"

Abstract: SS1003M
Contextual Info: SS1003M Ordering number : ENN8347 SS1003M Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small Switching noise. Low forward voltage(IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).

diode sod-123 marking code 120

Contextual Info: SS1040 WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features  Low Turn-on Voltage   Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability

SOD-123FL

Abstract: marking code SOD-123fl G10 5410 SS1020FL-T1 SS1030FL SS1030FL-T1 SS1040FL SS1040FL-T1 SS1060FL SS1020FL
Contextual Info: SS1020FL – SS10100FL WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application C ! Plastic Material – UL Recognition Flammability

marking DF

Abstract: ECSP1608-4 N3004 SS1003EJ
Contextual Info: SS1003EJ Ordering number : ENN8157 SS1003EJ Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).

Contextual Info: SS10150FL – SS10200FL 1.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Turn-On Voltage   Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application

SS1040HE

Abstract: SS1040HEWS J75 DIODE marking EV
Contextual Info: SS1040HEWS SCHOTTKY BARRIER DIODE SOD-323HE Unit: inch mm FEATURES 0.107(2.70) • SOD-323HE low profile package 0.090(2.30) 0.077(1.95) • Low forward voltage drop, low reverse current 0.055(1.40) 0.004(0.10) 0.047(1.20) 0.030(0.75) 0.017(0.45) APPLICATIONS