Eye Safety
Abstract: No abstract text available
Text: Eye Safety www.vishay.com Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC 62471 based on CIE S009 INTRODUCTION RISK ASSESSMENT FOR LED - APPLICATIONS Product safety legislation (e.g. general product safety laws
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22-Jan-15
Eye Safety
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diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
Text: Eye Safety Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC EN DIN 60825-1 LEDs are removed from IEC 60825-1 but are still covered by the free air communication safety standard IEC 60825-12. Therefore LEDs for free air communication are still to be
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11-Sep-08
diode SR 360
IEC 62471
60825-1
IEC-60825
diode sr 60
IEC62471
DIN 875
VSLB3940X01
IEC 60825-1
diode SR 360 datasheet
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Untitled
Abstract: No abstract text available
Text: STL60N10F7 N-channel 100 V, 0.013 Ω typ., 12 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features Order code VDS STL60N10F7 100 V RDS on max PTOT ID 0.0165 Ω 12 A 5W 1 2 • Ultra low on-resistance
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STL60N10F7
DocID024453
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Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0103-0810
Leader 8020 schematics Oscilloscope
smd diode schottky code marking GW
sn 16848
APPLICATION NOTE BpW77
IEC-60050
BPw104
PHOTO TRANSISTOR BPW77
BPW34 PHOTODIODE THEORY
Marking Code SMD databook 2010
bpw104s
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Untitled
Abstract: No abstract text available
Text: STL60N10F7 N-channel 100 V, 0.0145 Ω typ., 12 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Order code VDS RDS on max ID PTOT STL60N10F7 100 V 0.018 Ω 12 A 5W 2 3 • Ultra low on-resistance
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STL60N10F7
DocID024453
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FAN6206
Abstract: fan4801 1N4148 JESD22-A114 dual-Forward fan6210
Text: FAN6206 Highly Integrated Dual-Channel Synchronous Rectification Controller for Dual-Forward Converter Features Description Highly Integrated Dual-Channel SR Controller Internal Linear-Predict Timing Control for DCM Operation The highly integrated FAN6206 is a dual-channel
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FAN6206
FAN6206
fan4801
1N4148
JESD22-A114
dual-Forward
fan6210
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TSHA440
Abstract: TSHA4400 TSHA4401
Text: TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 20°
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TSHA4400,
TSHA4401
2002/95/EC
2002/96/EC
TSHA440.
11-Mar-11
TSHA440
TSHA4400
TSHA4401
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TSHF5210
Abstract: No abstract text available
Text: TSHF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES DESCRIPTION • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off
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TSHF5210
2002/95/EC
2002/96/EC
TSHF5210
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm
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TSFF5210
2002/95/EC
2002/96/EC
TSFF5210
11-Mar-11
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TSHG6200
Abstract: No abstract text available
Text: TSHG6200 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES DESCRIPTION • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 850 nm
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TSHG6200
2002/95/EC
2002/96/EC
TSHG6200
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: TSHG8200 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Peak wavelength: λp = 830 nm High reliability
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TSHG8200
2002/95/EC
2002/96/EC
TSHG8200
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: TSHF6210 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Peak wavelength: λp = 890 nm High reliability
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TSHF6210
2002/95/EC
2002/96/EC
TSHF6210
11-Mar-11
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FAN480X
Abstract: fairchild TL431 programmable 1.0.2 FAN6210MY FCP20N60 JESD22-A114 diode dual SR2. 8 pc817 dual
Text: FAN6210 Primary-Side Synchronous Rectifier SR Trigger Controller for Dual Forward Converter Features Description Primary-Side Trigger Controller for Dual Forward Converters with Synchronous Rectifier (SR) Specialized SR Controller for Dual Forward
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FAN6210
FAN6210
FAN6206.
FAN480X
fairchild TL431 programmable 1.0.2
FAN6210MY
FCP20N60
JESD22-A114
diode dual SR2. 8
pc817 dual
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FSR630
Abstract: FSR660 pc817 fairchild FAN480X FCP20N60 FAN6210MY JESD22-A114 zd 5.6v uf1007 DIODE pc817 dual
Text: FAN6210 Primary-Side Synchronous Rectifier SR Trigger Controller for Dual Forward Converter Features Description Primary-Side Trigger Controller for Dual Forward Converters with Synchronous Rectifier (SR) FAN6210 is a primary-side trigger Integrated Circuit (IC)
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FAN6210
FAN6210
FSR660/630.
FSR630
FSR660
pc817 fairchild
FAN480X
FCP20N60
FAN6210MY
JESD22-A114
zd 5.6v
uf1007 DIODE
pc817 dual
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Untitled
Abstract: No abstract text available
Text: TSHG6200 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 850 nm • • • • High reliability
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TSHG6200
2002/95/EC
2002/96/EC
TSHG6200
11-Mar-11
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ICE2HS01G
Abstract: ice2hs01 LLC resonant transformer gate driver LLC resonant transformer RESONANT CONTROLLER 11-May-2010
Text: Datasheet, Version 2.0, 11 May 2010 ICE2HS01G High Performance Resonant Mode Controller Power Management & Supply N e v e r s t o p t h i n k i n g . ICE2HS01G Revision History: 11 May 2010 Previous Version: 1.0 Page Subjects major changes since last revision
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ICE2HS01G
ICE2HS01G
ice2hs01
LLC resonant transformer gate driver
LLC resonant transformer
RESONANT CONTROLLER
11-May-2010
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Untitled
Abstract: No abstract text available
Text: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm
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TSFF5210
2002/95/EC
2002/96/EC
TSFF5210
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: TSHF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 94 8390 Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off
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TSHF5210
2002/95/EC
2002/96/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm
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TSFF5210
2002/95/EC
2002/96/EC
TSFF5210
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: TSHF6210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5
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TSHF6210
2002/95/EC
2002/96/EC
TSHF6210
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: TSHG8200 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : 5 Peak wavelength: p = 830 nm • • • • High reliability
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TSHG8200
2002/95/EC
2002/96/EC
TSHG8200
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: TSHG8200 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : 5 Peak wavelength: p = 830 nm • • • • High reliability
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TSHG8200
2002/95/EC
2002/96/EC
TSHG8200
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: TSHG6200 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 850 nm • • • • High reliability
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TSHG6200
2002/95/EC
2002/96/EC
TSHG6200
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: TSHF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 94 8390 Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off
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TSHF5210
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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