CT25
Abstract: Q62702-B499 marking code BB Diode
Text: BB 419 Silicon Variable Capacitance Diode ● BB 419 For VHF tuned circuit applications Type Marking Ordering Code tape and reel BB 419 white 2 Q62702-B499 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR
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Q62702-B499
OD-123
CT25
Q62702-B499
marking code BB Diode
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tp 127
Abstract: Code sod-123 on semiconductor
Text: BAS85W SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • Voltage clamping • Protection circuits 1 Cathode 2 Anode 2 1 MB Top View Marking Code: "MB" Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25 OC
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BAS85W
OD-123
OD-123
tp 127
Code sod-123 on semiconductor
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zener diode E2
Abstract: ZENER DIODE E1 zener diode J3 DIODE H5 c2 marking C5 87 marking code MM zener MMSZ5240 MMSZ5257B RoHS MMSZ5221B MMSZ5222B
Text: Surface Mount Zener Diode MMSZ52XXB Series A suffix of "-C" specifies halogen & lead-free 500mW,5% SOD-123 Electrical Characteristics @ T A=25 C unless otherwise specified Type Number Marking Code Zener Voltage Range Note 1 Nom V 2.4 2.5 2.7 3.0 3.3 3.6
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MMSZ52XXB
500mW
OD-123
01-Jun-2002
zener diode E2
ZENER DIODE E1
zener diode J3
DIODE H5 c2
marking C5 87
marking code MM zener
MMSZ5240
MMSZ5257B RoHS
MMSZ5221B
MMSZ5222B
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Diode marking CODE 5M SOD
Abstract: SOD-123 marking code A1 MBR130T1G Diode SOd-123 marking cu 5M MARKING CODE SCHOTTKY DIODE marking code EE sod-123 marking code DV MBR130T1 MBR130T3 MBR130T3G
Text: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR130T1,
MBR130T3
OD-123
Diode marking CODE 5M SOD
SOD-123 marking code A1
MBR130T1G
Diode SOd-123 marking cu
5M MARKING CODE SCHOTTKY DIODE
marking code EE
sod-123 marking code DV
MBR130T1
MBR130T3
MBR130T3G
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diode marking 74 SOD123
Abstract: diode sod-123 marking code b3 schottky diode sod-123 marking code 120 sod123 B3 diode sod-123 marking code 120 ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
Text: MBR0530T1, MBR0530T3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR0530T1,
MBR0530T3
OD-123
OD-123
diode marking 74 SOD123
diode sod-123 marking code b3
schottky diode sod-123 marking code 120
sod123 B3
diode sod-123 marking code 120
ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
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JS SOD123
Abstract: ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
Text: MMSD103T1 Preferred Device High Voltage Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 200 mAdc IFM surge 625 mAdc Characteristic Symbol Value Unit Forward Power Dissipation, FR−5 Board (Note 1.) @ TA = 25°C
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MMSD103T1
JS SOD123
ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
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schottky diode sod-123 marking code 120
Abstract: MARKING S3 Marking "s3" Schottky barrier diode sod-123 marking code 120
Text: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR130T1,
MBR130T3
OD-123
1085C/W
OD-123
schottky diode sod-123 marking code 120
MARKING S3
Marking "s3" Schottky barrier
diode sod-123 marking code 120
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schottky diode sod-123 marking code 120
Abstract: diode marking 74 SOD123 MBR0530T1G MARKING B3 SOD marking 74 A11E MBR0530T1 MBR0530T1G MBR0530T3 MBR0530T3G SOD123 marking 74
Text: MBR0530T1, MBR0530T3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD−123 Package The MBR0530T1/3 uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity
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MBR0530T1,
MBR0530T3
OD-123
MBR0530T1/3
schottky diode sod-123 marking code 120
diode marking 74 SOD123
MBR0530T1G MARKING B3
SOD marking 74
A11E
MBR0530T1
MBR0530T1G
MBR0530T3
MBR0530T3G
SOD123 marking 74
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MBR130T1
Abstract: MBR130T1G MBR130T3 MBR130T3G
Text: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR130T1,
MBR130T3
OD-123
MBR130T1/D
MBR130T1
MBR130T1G
MBR130T3
MBR130T3G
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MBR130T1
Abstract: MBR130T1G MBR130T3 MBR130T3G
Text: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR130T1,
MBR130T3
OD-123
MBR130T1/D
MBR130T1
MBR130T1G
MBR130T3
MBR130T3G
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MBR130T1
Abstract: MBR130T1G MBR130T3 MBR130T3G S3M-G
Text: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR130T1,
MBR130T3
OD-123
MBR130T1/D
MBR130T1
MBR130T1G
MBR130T3
MBR130T3G
S3M-G
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JS SOD123
Abstract: MMSD103T1
Text: MMSD103T1 Preferred Device High Voltage Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 200 mAdc IFM surge 625 mAdc Characteristic Symbol Value Unit Forward Power Dissipation, FR–5 Board (Note 1.) @ TA = 25°C
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MMSD103T1
r14525
MMSD103T1/D
JS SOD123
MMSD103T1
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diode marking 74 SOD123
Abstract: schottky diode sod-123 marking code 120 schottky diode sod-123 marking code 12 MBR0530T1 MBR0530T3 diode sod-123 marking code 120
Text: MBR0530T1, MBR0530T3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR0530T1,
MBR0530T3
r14525
MBR0530T1/D
diode marking 74 SOD123
schottky diode sod-123 marking code 120
schottky diode sod-123 marking code 12
MBR0530T1
MBR0530T3
diode sod-123 marking code 120
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MBR0530T1G
Abstract: MBR0530T1 MBR0530T3 MBR0530T3G diode sod-123 marking code b3
Text: MBR0530T1, MBR0530T3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD−123 Package The MBR0530T1/3 uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity
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MBR0530T1,
MBR0530T3
OD-123
MBR0530T1/3
MBR0530LT1/D
MBR0530T1G
MBR0530T1
MBR0530T3
MBR0530T3G
diode sod-123 marking code b3
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MMSD103T1
Abstract: No abstract text available
Text: MMSD103T1 Preferred Device High Voltage Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 200 mAdc IFM surge 625 mAdc Peak Forward Surge Current http://onsemi.com 1 Cathode THERMAL CHARACTERISTICS
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MMSD103T1
r14525
MMSD103T1/D
MMSD103T1
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MBR130T1G
Abstract: No abstract text available
Text: MBR130T1G, NRVB130T1G, MBR130T3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR130T1G,
NRVB130T1G,
MBR130T3G
MBR130T1/D
MBR130T1G
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Diode SOd-123 marking cu
Abstract: MBR130T1 MBR130T3 Marking "s3" Schottky barrier
Text: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR130T1,
MBR130T3
r14525
MBR130T1/D
Diode SOd-123 marking cu
MBR130T1
MBR130T3
Marking "s3" Schottky barrier
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Untitled
Abstract: No abstract text available
Text: MBR0530T1, MBR0530T3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD−123 Package The MBR0530T1/3 uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity
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MBR0530T1,
MBR0530T3
OD-123
MBR0530T1/3
MBR0530T1/D
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MBR130T1G
Abstract: MBR130T3G
Text: MBR130T1G, NRVB130T1G, MBR130T3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR130T1G,
NRVB130T1G,
MBR130T3G
OD-123
MBR130T1/D
MBR130T1G
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Untitled
Abstract: No abstract text available
Text: MBR130, NRVB130 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR130,
NRVB130
MBR130T1/D
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SOD-123LF
Abstract: MBR120VLSFT1 MBR120VLSFT1G MBR120VLSFT3 MBR120VLSFT3G
Text: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120VLSFT1
OD-123
SOD-123LF
MBR120VLSFT1
MBR120VLSFT1G
MBR120VLSFT3
MBR120VLSFT3G
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SOD-123LF
Abstract: MBR120LSFT1 MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G SOD-123FL
Text: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120LSFT1
OD-123
SOD-123LF
MBR120LSFT1
MBR120LSFT1G
MBR120LSFT3
MBR120LSFT3G
SOD-123FL
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Untitled
Abstract: No abstract text available
Text: SIEMENS • âE3SL05 000^427 74D Silicon Variable Capacitance Diode BB 419 • For VHF tuned circuit applications Type Marking Ordering Code tape and reel BB 419 white 2 Q62702-B499 Pin Configuration Package1) SOD-123 ky- o2 1 i^ i o -1
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OCR Scan
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PDF
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E3SL05
Q62702-B499
OD-123
EHA0700I
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Variable Capacitance Diode BB 419 • For V H F tuned circuit applications Type Marking Ordering Code tape and reel BB 419 white 2 Q62702-B499 Pin Configuration Package1) Ò SOD-123 1 o CMA0700I Maximum Ratings Parameter Symbol Values Unit
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OCR Scan
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PDF
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Q62702-B499
OD-123
A0700I
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