DIODE SMD 30A Search Results

5n fast recovery diodes

Abstract: 30A 45V SCHOTTKY BARRIER RECTIFIER GENERAL SEMICONDUCTOR SMD DIODES smd diode 0.5A fast 600v LOW LOSS FAST RECOVERY DUAL DIODES
Contextual Info: CONTENTS I. II. III. IV. V. SMD RECTIFIER DIODE LIST. SMD PACKAGE OUTLINE DRAWINGS.

smd diode a7

Abstract: schottky diode marking A7 diode marking H2 5011s smd marking 5G smd marking a7 DF30PC3M marking A7 diode SHINDENGEN DIODE A7 diode smd
Contextual Info: Schottky Barrier Diode Twin Diode mm DF30PC3M OUTLINE 30V 30A Feature • SMD • SMD • Ultra-Low Vf=0.4V • High lo Rating-Small-RKG • î 3 V f=0.4V M ain Use • K'.yxU-jS?8Bfi± • Reverse connect protection for DC power source • DC OR-output

STO-220

Abstract: DF30JC4 SHINDENGEN DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF30JC4 o u t lin e 40V 30A Feature • • • • • SMD • filR = 0 .7 m A • jw is æ ç ë c u ic < L ' SMD Low lR=0.7mA Resistance for thermal run-away High lo Rating -Small-PKG Main Use • Secondary rectification for Adapter of

GC smd diode

Abstract: IOA10 smd marking gc diode
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30JC4 Unit-m m W e ig h t 1.5g Typ 10.2 40V 30A Feature • SMD • SMD • <SlR=0.7mA • Low lR=0.7mA • S iy R T È ÎE iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG

smd diode marking JC

Abstract: DIODE BJE DIODE BJE smd marking JC diode df30sc3 smd marking 5G DF30SC3ML hm marking smd DIODE SHINDENGEN DIODE sto220
Contextual Info: Schottky Barrier Diode Twin Diode m n m DF30SC3ML o u tlin e Unit I mm Weight 1.5« Typ Package ! STO-220 0 7h£9(M ) 30V 30A Feature • SMD • SMD 0 45 V • < S V f= . • P rrsm 0 45V • Low V f= . 7 ’K 3 > î / x (S K î Polarity • P r r s m R a t in g

Contextual Info: Schottky Barrier Diode Twin Diode m w m OUTLINE DF30SC4M 40V 30A Feature • SMD • SMD • P rrsm7 K 5 V v i S ’ Œ • P rrsm Rating • High lo Rating'Small-PKG Main Use • DC/DC n y jt — p • m m .r-k .o A m s s • is m .tf- fz r ju m g • •

Contextual Info: Schottky Barrier Diode Twin Diode mtm DF30JC6 OUTLINE Unit-mm Package : STO -220 Weight 1.5g Typ PyhfLig-(ffl) 10.2 60V 30A Feature • SM D • SMD • Tj=150°C • Tj=150°C • Low lR = 0 .7 m A • <S lR =0.7m A • • Resistance for thermal run-away

smd diode SM 97

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30PC3M PyhfLig- ffl U nit-m m W eight 1.5g(Typ) 10.2 30V 30A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M

smd ic marking SH

Contextual Info: Schottky Barrier Diode Twin Diode M fm DF30JC10 O UTLINE Unit-mm Weight 1.5g Typ Package : STO-220 PyhfLig-(ffl) 10.2 100V 30A Feature • SM D • SMD • • (glR=1.0mA • Low Ir =1 .0mA • S iy R T È ÎE iË c I l_y (<_ <L Ui • Resistance for thermal run-away

smd regulator marking

Abstract: DF30NC15 MARKING FY smd diode marking BM smd marking fy SHINDENGEN DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF30NC15 o u t lin e 150V 30A Fea tu re • SM D • SMD • Low lR=0.5mA • f ilR = 0 . 5 m A • Resistance for thermal run-away M ain U s e • Switching Regulator • DC/DC Converter • D C /D C n y K - 9 • OA

STO-220 Shindengen

Abstract: DF30JC6 SHINDENGEN DIODE diode smd 5t
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF30JC6 o u t lin e 60V 30A Feature • SM D • SMD • filR = 0 .7 m A • Low lR=0.7mA • Resistance for thermal run-away • jw is æ ç ë c u ic < L ' • High lo Rating -Small-PKG Main Use • snata 2%ffi8æ • Secondary rectification for Adapter of

DF30JC10

Abstract: J1 smd marking SHINDENGEN DIODE
Contextual Info: Schottky Barrier Diode Twin Diode m n m DF30JC10 o u t lin e 100V 30A Feature • SMD • filR=1.0mA • Low Ir= 1 .0m A • jw is æ ç ë c u ic < L ' • Resistance for thermal run-away • SM D • High lo Rating -Sm all-PK G Main Use • y - h 'P C . L C D t - S 'H

Contextual Info: C30T04QH C30T04QH-11A 30a / 40v SCHOTTKY BARRIER DIODE FEATURES o | SQUARE-PAK | TO-263AB SMD Packaged in 24mm Tape and Reel : C30T04QH o T abless T0-220 : C30T04QH-11A ODual Diodes •Cathode Common OLow Forward Voltage Drop O High Surge Capability O T j = 150°C operation

sm smd diode marking

Abstract: D1FH3
Contextual Info: Single Diode D1FH3 Schottky Barrier Diode mtmm o u t l in e 30V 3A Feature Small SMD Super-Low V f=0.36V • H Î M V f=0.36V Main Use • Reverse connect protection for DC power source • DC/DC Converter • Mobile phone, PC • K u / x U — ïÉ fë B S ih

a17 smd diode

Abstract: marking smd NU JT MARKING smd marking MY SM3 DIODE
Contextual Info: Schottky Barrier Diode Single Diode m tm m o u tlin e Package :G1F DG1M3A Unu:mm W eight O .O llii Typ in 30V 1.5A Feature • g /J 'fflS M D • Ultra-small SMD • |g n i^ = 0 .8 m m • Ultla-thin PKG=0.8mm • < 5V f = 0 .4 6 V • Low V f-0 .46V • 1KIr = 0.05mA

smd marking KM

Abstract: JH MARKING CODE SCHOTTKY DIODE
Contextual Info: Schottky Barrier Diode Single Diode DG1M3A Unit-mm Weight 0.011 g Typ Package : G1F 30V 1.5A Feature • i s i l s y = 0 .8 m m Ultra-small SMD Ultla-thin PKG=0.8mm •< S V f= 0 .4 6 V Low Vf=0.46V • 1 5 I r = 0 .0 5 m A Low lR =0.05m A • If s m = 3 0 A

Contextual Info: Transistors IC MOSFET SMD Type Product specification 2SK3716 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 2700 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127

Contextual Info: IDB30E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 30 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage • Easy paralleling

2SK3716

Abstract: smd diode Mu
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3716 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 2700 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max

D15E60

Abstract: IDP15E60 IDB15E60 Q67040-S4484 Q67040-S4485
Contextual Info: IDP15E60 IDB15E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.

D30E60

Abstract: IDP30E60 IDB30E60 diode 30a 400v
Contextual Info: IDP30E60 IDB30E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 30 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.

Contextual Info: IC Transistors MOSFET SMD Type Product specification 2SK3365 TO-252 MAX. VGS = 4 V, ID = 15A Low Ciss: Ciss = 1300 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.8 0.50-0.7 3.80 RDS(on)3 = 29m Unit: mm +0.1 2.30-0.1 +0.15 5.55-0.15

Contextual Info: IDB15E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage • 175°C operating temperature

D30E120

Abstract: IDP30E120 IDB30E120
Contextual Info: IDP30E120 IDB30E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 30 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.