S10045
Abstract: violet laser diode chip
Text: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its
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S10044
S10044
S5106)
S10045)
SE-171
KPIN1076E02
S10045
violet laser diode chip
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Untitled
Abstract: No abstract text available
Text: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its
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S10044
S10044
S5106)
S10045)
SE-171
KPIN1076E02
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S09ZD
Abstract: Tyntek
Text: Si Zener-diode Chip－TKS09ZD-L Preliminary 1. Scope •The specification applies to planar Zener diode. •Extra lower leakage current •Special thickness for special assembly process. 2. Structure •Planar type Zener diode. •Electrode P anode ：Aluminum.
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ChipTKS09ZD-L
100uA
S09ZD
Tel886-3-5781616
Fax886-3-5780545
Tel886-37-582997
Fax886-37-582908
S09ZD
Tyntek
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Untitled
Abstract: No abstract text available
Text: Si Zener-diode Chip－TKS09ZD-L Preliminary 1. Scope •The specification applies to planar Zener diode. •Extra lower leakage current •Special thickness for special assembly process. 2. Structure •Planar type Zener diode. •Electrode P anode ：Aluminum.
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ChipTKS09ZD-L
100uA
S09ZD
Tel886-3-5781616
Fax886-3-5780545
Tel886-37-582997
Fax886-37-582908
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diode zener ZD 12
Abstract: diode zd 12 diode zener ZD zener diode chip
Text: Si Zener-diode Chip－TKT16ZD 1. Scope ‧The specification applies to planar Zener diode. ‧Extra lower leakage current ‧Special thickness for special assembly process. 2. Structure ‧Planar type Zener diode. ‧Electrode P anode ：Aluminum. (Gold for option)
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ChipTKT16ZD
13mil
16mil
330mm
406mm
110mm
152mm
10mil
101mm
254mm
diode zener ZD 12
diode zd 12
diode zener ZD
zener diode chip
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zenerdiode 5v
Abstract: No abstract text available
Text: Si Zener-diode Chip－TKS06ZD 1. Scope ‧The specification applies to planar Zener diode. ‧Extra lower leakage current ‧Special thickness for special assembly process. 2. Structure ‧Planar type Zener diode. ‧Electrode P anode ：Aluminum. (Gold for option)
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ChipTKS06ZD
152mm
110mm
122mm
Tel886-3-5781616
Fax886-3-5780545
Tel886-37-582997
zenerdiode 5v
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Untitled
Abstract: No abstract text available
Text: Si Zener-diode Chip－TKS09ZD 1. Scope ‧The specification applies to planar Zener diode. ‧Extra lower leakage current ‧Special thickness for special assembly process. 2. Structure ‧Planar type Zener diode. ‧Electrode P anode ：Aluminum. (Gold for option)
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ChipTKS09ZD
228mm
110mm
152mm
142mm
Tel886-3-5781616
Fax886-3-5780545
Tel886-37-582997
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S10045
Abstract: No abstract text available
Text: PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its active area has a specially processed surface structure that maintains good photocurrent linearity up to an incident light level 10 times
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S10044
S10044
S5106)
S10045)
SE-171
KPIN1076E02
S10045
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Untitled
Abstract: No abstract text available
Text: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power semiconductor laser diode. Its active area has a specially processed surface structure that maintains good photocurrent linearity up to an incident light level 10 times higher than that
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S10044
S10044
S5106)
S10045)
SE-171
KPIN1076E01
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diode zener ZD 56
Abstract: diode zener ZD 12
Text: Si Zener-diode Chip－TKN09ZD 1. Scope ‧The specification applies to planar Zener diode. ‧Extra lower leakage current ‧Special thickness for special assembly process. 2. Structure ‧Planar type Zener diode. ‧Electrode N cathode ：Aluminum. (Gold for option)
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ChipTKN09ZD
228mm
110mm
152mm
142mm
Tel886-3-5781616
Fax886-3-5780545
Tel886-37-582997
diode zener ZD 56
diode zener ZD 12
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din 46247
Abstract: No abstract text available
Text: Click on outline no. Rectifier Diode Bridges Tvj max outline °C 125 B2 250/225-30 Si 700 250 17/15* ø 5.3 24 23.2 ~ B2 500/450-30 Si 1500 500 ~ 4.2 0.9 6.3 125 B6 250/330-40 Si 700 250 23.2 BK2 BK2 24/22* Flachstecker Spade plug/ Fiche DIN 46247 23.2 BK1
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diode zener 3v
Abstract: ZENER Vr 3V
Text: Si Zener-diode Chip－TKS09ZD-L 1. Scope ‧The specification applies to planar Zener diode. ‧Extra lower leakage current ‧Special thickness for special assembly process. 2. Structure ‧Planar type Zener diode. ‧Electrode P anode ：Aluminum. ‧Electrode N (cathode) side: Gold.
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ChipTKS09ZD-L
S09ZD
Tel886-3-5781616
Fax886-3-5780545
Tel886-37-582997
Fax886-37-582908
diode zener 3v
ZENER Vr 3V
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A2 9 zener diode
Abstract: A2 12 zener diode diode zener ZD 150 diode zener ZD 12 diode zd 12 A2 zener diode 6 a3 diode zener zener diode A3 Zener LED diode zener ZD 5
Text: Si Zener-diode Chip－TKT16ZD-L 1. Scope ‧The specification applies to planar Zener diode. ‧Extra lower leakage current ‧Special thickness for special assembly process. 2. Structure ‧Planar type Zener diode. ‧Electrode P anode ：Aluminum. ‧Electrode N (cathode) side: Gold.
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ChipTKT16ZD-L
Size16mil
016inch
013inch
100um)
Tel886-3-5781616
Fax886-3-5780545
Tel886-37-582997
Fax886-37-582908
A2 9 zener diode
A2 12 zener diode
diode zener ZD 150
diode zener ZD 12
diode zd 12
A2 zener diode
6 a3 diode zener
zener diode A3
Zener LED
diode zener ZD 5
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diode zener ZD 12
Abstract: diode zener ZD 56
Text: Si Zener-diode Chip－TK009ZD-G 1. Scope ‧The specification applies to planar Zener diode. ‧Extra lower leakage current ‧Special thickness for special assembly process. 2. Structure ‧Planar type Zener diode. ‧Electrode P anode ：Au ‧Electrode N (cathode) side: Au
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ChipTK009ZD-G
009inch
100um)
150um)
Tel886-3-5781616
Fax886-3-5780545
Tel886-37-582997
Fax886-37-582908
diode zener ZD 12
diode zener ZD 56
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H 48 zener diode
Abstract: 48 H diode diode zd 48 zener diode chip
Text: Si Zener-diode Chip－TKN06ZD-L 1. Scope ‧The specification applies to planar Zener diode. ‧Extra lower leakage current ‧Special thickness for special assembly process. 2. Structure ‧Planar type Zener diode. ‧Electrode N cathode ：Aluminum. ‧Electrode P (anode) side: Gold.
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ChipTKN06ZD-L
006inch
100um)
Tel886-3-5781616
Fax886-3-5780545
Tel886-37-582997
Fax886-37-582908
H 48 zener diode
48 H diode
diode zd 48
zener diode chip
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H 48 zener diode
Abstract: diode zd 48
Text: Si Zener-diode Chip－TK006ZD-L 1. Scope ‧The specification applies to planar Zener diode. ‧Extra lower leakage current ‧Special thickness for special assembly process. 2. Structure ‧Planar type Zener diode. ‧Electrode P anode ：Aluminum. ‧Electrode N (cathode) side: Gold.
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ChipTK006ZD-L
006inch
100um)
Tel886-3-5781616
Fax886-3-5780545
Tel886-37-582997
Fax886-37-582908
H 48 zener diode
diode zd 48
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A2 9 zener diode
Abstract: zener diode a2 11 A2 zener diode diode zener ZD 150 A2 12 zener diode Zener Diode 6 a2 diode zd 12 diode zener ZD 12 diode ZENER A2 6
Text: Si Zener-diode Chip－TKD11ZD-L 1. Scope ‧The specification applies to planar Zener diode. ‧Extra lower leakage current ‧Special thickness for special assembly process. 2. Structure ‧Planar type Zener diode. ‧Electrode P anode ：Aluminum. ‧Electrode N (cathode) side: Gold.
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ChipTKD11ZD-L
Size11mil
11mil
011inch
100um)
Tel886-3-5781616
Fax886-3-5780545
Tel886-37-582997
Fax886-37-582908
A2 9 zener diode
zener diode a2 11
A2 zener diode
diode zener ZD 150
A2 12 zener diode
Zener Diode 6 a2
diode zd 12
diode zener ZD 12
diode ZENER A2 6
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Untitled
Abstract: No abstract text available
Text: Gleichrichterdioden-Brücken Rectifier diode bridges Ponts redresseurs Typ V rrm V rms I fsm Type V B 40.C, 800 SI, „ Ä ä P D - '' B 80 Ç 800 Si, .D, .SD ^ V B f » C £00 Si, .D, .SD * B 380 C 800 Si, .D. .SD : 40 B 380 C 1000 Si 80 125 R /C
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1000Si
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220-10 diode
Abstract: DIODE B2
Text: Rectifier diode bridges Type V rrm V hm s I fsm If a v m t « 10 ms ^v| max Last, Load Charge: R /C A A °c t»j= V V ^vj max Outline 100 190 300 600 900 40 80 125 250 380 50 0,9/0,8 125 Si : 102 D : 103 SD: 104 Si Si Si Si Si 100 190 300 600 900 40 80 125
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hlb/2200
220-10 diode
DIODE B2
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ECG584 schottky
Abstract: diode ECG109 diode ecg 588 vat 2000 ge ECG575 Z3 DIODE ECG577 Z4 diode Diode ECG110A ECG113
Text: Diodes and R<£ctifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description ECG109 ECG110A Gen Purp Ge Gen Purp Ge 100 40 ECG110MP Matched Diode Pair Ge 30 ECG112 UHF Mixer (Schottky) Si Common Cathode Si Dual Diode, CenterTap TV Horiz ECG114
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ECG109
ECG110A
ECG110MP
ECG112
ECG113A
ECG114
ECG115
ECG592
ECG593
ECG694
ECG584 schottky
diode ECG109
diode ecg 588
vat 2000 ge
ECG575
Z3 DIODE
ECG577
Z4 diode
Diode ECG110A
ECG113
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B-500 diode
Abstract: 220-10 diode c 5000 3300 C5000-3300 C3700-2200 B380 J 380 B 80 C3700 - 2200 B38OC B250C150
Text: Gleichrichterdioden-Brücken Rectifier diode bridges Ponts redresseurs Typ Type V rms V rrm I favm ^vi max Last, Load C harge R /C A A °c 0,9/0,8 1 2 fe « .»Hii tv ,= V ¿fO.C.ÇÔOBi, 8 0 Ç 800 Si, 1 2 8 0 ^8 0 0 Si, f » C 500 Si, 380 C 800 Si, .D „,-S D ,
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150CFSi
1500/1000SÃ
C3700/2200
B-500 diode
220-10 diode
c 5000 3300
C5000-3300
C3700-2200
B380
J 380
B 80 C3700 - 2200
B38OC
B250C150
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Leistungsdiode
Abstract: "RECTIFIER DIODE" B2-380/340-30SI
Text: Rectifier Diode Bridges Type V rrm V rms V Gleichrichterdioden Brücken Ifsm I favm "i"vj max A A °c V 10 ms, V Tyjmax B2 60/ 52-30 SI 150 60 B2 125/110-30 SI 300 125 B2 250/225-30 Si 700 250 B2 380/340-30 SI 1100 380 outline Last, load Charge: R/C 280 10/9
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diode B2 sm
Abstract: B2125
Text: Rectifier Diode Bridges ui V rrm V 1 > > Type Ifsm Ifavm A A V T y jm a x 60/ 52-30 Si 150 60 B2 125/110-30 Si 300 125 B2 250/225-30 Si 700 250 B2 380/340-30 Si 1100 380 outline ° C Last, load Charge: R/C 10 ms, B2 T . , max 10/9 280 BK1 175 17/15* B2 500/450-30 Si 1500 500
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B-500 diode
Abstract: 3700/2200 250C1500 B250C 8250 C3700-2200 TT 2200 b80c din 46247 B380
Text: Rectifier Diode Bridges Type V rrm V rms V V Ifsm Ifav m A A Last 10 ms load tvj=tvjma change: Type tvj max outline O c V rrm V rms Ifsm Ifavm V V A A Last load change: tvj= tvjmax R/C B 40 C 800 Si,.D,.SD 100 40 145 B2 30/ 25-30 Si 75 30 B 80 C 800 Si, .D.SD
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0D0216Ã
B-500 diode
3700/2200
250C1500
B250C
8250
C3700-2200
TT 2200
b80c
din 46247
B380
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