DIODE SG 9C Search Results
DIODE SG 9C Datasheets Context Search
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IC-R20Contextual Info: 10mm BI-COLOR & BI-POLAR BIG LED LAMPS L-819II HIGH EFFICIENCY RED / HIGH EFFICIENCY RED L-819YY YELLOW/YELLOW L-819GG GREEN /GREEN L-819EG HIGH EFFICIENCY RED / GREEN L-819SRSG SUPER BRIGHT RED / SUPER BRIGHT GREEN Kingbright Package Dimensions Features • UNIFORM LIGHT OUTPUT. |
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L-819II L-819YY L-819GG L-819EG L-819SRSG L-819SRSGW-CC IC-R20 | |
Contextual Info: Datasheet R2A20056BM Lithium-Ion Battery Charger IC with Auto Load Current Distribution R03DS0075EJ0100 Rev. 1.23 Apr 15,2013 Description R2A20056BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC. Built-in Input current limitation circuit compliant with USB requirements and dual output system and battery |
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R2A20056BM R03DS0075EJ0100 R2A20056BM mA/1000mA/1500mA/1800mA/Limitless/Suspend | |
9CTIContextual Info: LIGHT BARS DE/2 7.5x14mm DE/4 15x15mm DF-3 6.8x19.9mm Features D escription •UNIFORM LIGHT EMITTING AREA. The Green and Super Bright Green source color devices •EASILY MOUNTED ON P.C. BOARDS OR are made with Gallium Phosphide Green Light Emitting Diode. |
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5x14mm 15x15mm 9CTI | |
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
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N300VContextual Info: 1MBI300F-060 300A IGBT M )\> i l : Outline Drawings IGBT MODULE Features • ‘l & f & in B S Low Saturation Voltage • W ± I E i i (M O S - y — M ffifi) • Voltage Drive Variety of Pow er Capacity Series • £ ]& : Applications • i — 9 — E t t f f l'f |
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1MBI300F-060 30S3-t I95t/R89) N300V | |
Contextual Info: CCD Signal Processor with Vertical Driver and Precision Timing Generator AD9925 FEATURES GENERAL DESCRIPTION Integrated 10-channel V-driver Register-compatible with the AD9991 and AD9995 3-field 6-phase vertical clock support 2 additional vertical outputs for advanced CCDs |
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AD9925 10-channel AD9991 AD9995 10-bit 12-bit 96-Lead BC-96) AD9925BBCZ1 AD9925BBCZRL1 | |
Contextual Info: CCD Signal Processor with Vertical Driver and Precision Timing Generator AD9925 FEATURES GENERAL DESCRIPTION Integrated 10-channel V-driver Register-compatible with the AD9991 and AD9995 3-field 6-phase vertical clock support 2 additional vertical outputs for advanced CCDs |
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AD9925 10-channel AD9991 AD9995 10-bit 12-bit 96-Lead BC-96) AD9925BBCZ1 AD9925BBCZRL1 | |
PSR 4000 SG 100 HF
Abstract: AD9995 The13th vertical INDICATOR AD9991 3 POSITION TOGGLE SWITCH 6 pin CSM 8700 Timing Generator for Frame Readout ups D6-11 AD9925
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AD9925 10-channel AD9991 AD9995 10-bit 12-bit 96-Lead BC-96) AD9925BBCZ1 AD9925BBCZRL1 PSR 4000 SG 100 HF AD9995 The13th vertical INDICATOR 3 POSITION TOGGLE SWITCH 6 pin CSM 8700 Timing Generator for Frame Readout ups D6-11 AD9925 | |
H124
Abstract: AD9925 AD9991 AD9995 2551v
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AD9925 10-channel AD9991 AD9995 10-bit 12-bit MO-205-AB. 96-Lead BC-96) AD9925BBCZ1 H124 AD9925 AD9995 2551v | |
Contextual Info: 14-Bit CCD Signal Processor with V-Driver and Precision TimingTM Generator AD9927 FEATURES GENERAL DESCRIPTION Integrated 18-channel V-driver 1.8 V AFETG core Internal LDO regulator and charge pump circuitry Compatibility with 3 V or 1.8 V systems 24 programmable vertical clock signals |
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14-Bit AD9927 18-channel 10-bit 14-bit, MO-225 128-Lead BC-128) AD9927BBCZ AD9927BBCZRL1 | |
bc128 connections
Abstract: XV18 AD9927 GP01 GP08 black diagram of 4bit by 3bit binary multiplier V7-V15 xv23 XV16
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14-Bit AD9927 18-channel 10-bit 14-bit, MO-225 128-Lead BC-128) AD9927BBCZ AD9927BBCZRL1 bc128 connections XV18 AD9927 GP01 GP08 black diagram of 4bit by 3bit binary multiplier V7-V15 xv23 XV16 | |
philips ecg master replacement guide
Abstract: smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024
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32R2105RW 32R2110RW 32R2111RW 32R2112RU 32R2124RV philips ecg master replacement guide smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024 | |
6ca DIODE
Abstract: TD2A hybrid ic pwm dc motor "regenerative braking" motor EN4553 hybrid pwm dc motor mosfet equivalent ic 4553 3 phase regenerative braking hybrid ic pwm
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EN4553 STK6855 STK6855 6ca DIODE TD2A hybrid ic pwm dc motor "regenerative braking" motor EN4553 hybrid pwm dc motor mosfet equivalent ic 4553 3 phase regenerative braking hybrid ic pwm | |
logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
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TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 | |
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p011h
Abstract: presettable shift register UPD17010 SKF4
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japanese transistor manual 1981
Abstract: p011h presettable shift register TRANSISTOR 545 AM tuner " Japanese Transistor Manual" 1981
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PD17010 PD17010 16-bit 12-bit japanese transistor manual 1981 p011h presettable shift register TRANSISTOR 545 AM tuner " Japanese Transistor Manual" 1981 | |
STK6100Contextual Info: SANYO SEMICONDUCTOR CORP b3E ]> • 7 cn ? D 7 b 0010*^2 4^5 M T S A J Ordering number : EN4290 Thick-film Hybrid Integrated Circuit HIC STK6103 i SA W O DC 3-phase Brushless Motor Driver (Output Current 3A) Overview The STK6103 is a hybrid IC incorporating a 3-phase |
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EN4290 STK6103 STK6103 STK6100 | |
Contextual Info: Preliminary Datasheet HITK0203MP Silicon N Channel MOS FET Power Switching R07DS0481EJ0100 Rev.1.00 Jun 22, 2011 Features • Low on-resistance RDS on = 68 m typ (VGS = 4.5 V, ID = 1.5 A) Low drive current High speed switching 2.5 V gate drive |
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HITK0203MP R07DS0481EJ0100 PLSP0003ZB-A | |
VM312Contextual Info: 4H l V M 3 1 2 10-CHANNEL, HIGH PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1991 TWO-TERMINAL READ/WRITE PREAMPS F E A TU R ES CONNECTION DIAGRAMS • High Performance: - Read mode gain = 150V/V - Low input noise = 0.8nV/VHz maximum - Input capacitance = 30pF maximum |
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10-CHANNEL, 50V/V 200nH VM3128PM34J 34-lead VM3129PMJ 32-lead VM3128PMJ VM312 | |
Contextual Info: Preliminary Datasheet RQK0203SGDQA R07DS0303EJ0400 Previous: REJ03G1323-0300 Rev.4.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 68 m typ (VGS = 4.5 V, ID = 1.5 A) Low drive current High speed switching |
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RQK0203SGDQA R07DS0303EJ0400 REJ03G1323-0300) PLSP0003ZB-A | |
Contextual Info: Preliminary Datasheet RQK0203SGDQA R07DS0303EJ0500 Rev.5.00 Jan 10, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS on = 68 mΩ typ (VGS = 4.5 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5 V gate drive |
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RQK0203SGDQA R07DS0303EJ0500 PLSP0003ZB-A | |
Contextual Info: Preliminary Datasheet RQK0203SGDQA R07DS0303EJ0400 Previous: REJ03G1323-0300 Rev.4.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 68 m typ (VGS = 4.5 V, ID = 1.5 A) Low drive current High speed switching |
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RQK0203SGDQA R07DS0303EJ0400 REJ03G1323-0300) PLSP0003ZB-A | |
Contextual Info: Preliminary Datasheet HITK0203MP Silicon N Channel MOS FET Power Switching R07DS0481EJ0100 Rev.1.00 Jun 22, 2011 Features • Low on-resistance RDS on = 68 m typ (VGS = 4.5 V, ID = 1.5 A) Low drive current High speed switching 2.5 V gate drive |
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HITK0203MP R07DS0481EJ0100 PLSP0003ZB-A | |
diode E1110
Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
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