DIODE SG 5 TS Search Results

SG30TC15M

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE SG 30T C 1 5 M 15 0 V 3 0 A Feature • Tj= 175°C • 7 ; iÆ • Tj=175°C • High lo Rating • Full Molded -,/b F • <£Ir=40|jA • Low Ir=40|jA • U le < l i • igüIÎŒ 2kV{*IŒ • Resistance for thermal run-away

transistor 467 sgs

Abstract: 0809 al diode sg 5 ts sgs30da070
Contextual Info: 30E i • 7*121237 QQ3Qbb4 =1 ■ /T T SCS-THOMSON ^ 7 # s IL E « ! ' T i3 3 - ' S 5 " SG S30D A 070D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE ■ FREEWHEELING DIODE

SGS25DB070D

Abstract: LC 0809 HALF BRIDGE NPN DARLINGTON POWER MODULE NPN DARLINGTON POWER MODULE sgs25D
Contextual Info: 3QE D • rz 7 ^ 7# TWSB? Q030bcJb D ■ SC S-TH O M SO N KilD DlH] [l[LiOU^(Q lD(gi s g S-THOMSON '" f ‘3> W 5 SG S25DB070D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS) . LOW Rth JUNCTION TO CASE > FREEWHEELING DIODE

S-40T

Abstract: SGS40TA045 SGS40
Contextual Info: 3DE D • 7^2^537 DG3GbS2 S ■ ' T ‘3>3' 5 fZ 7 SGS-THOMSON ^ 7# s SG S40T A 045D IL I « ! S G S-THQMSON NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS) . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING

diode sg 46

Abstract: SG DIODE MARKING diode sg 52 IGBT 2000V .50A
Contextual Info: £ ÿ j SG S-TH O M SO N n0 œ i l L I 0 ra [iïlBCi S T T A 5 1 2 D /F TURB O SW ITC H ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V (typ) 45ns (max) 2.0V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS

TCA 2025 b

Abstract: transistor v63 TCA 2025 STH4N90 STH4N90FI 0C183
Contextual Info: Zu SGS-THOMSON S TH 4 N90 S TH 4 N9 0 FI « M L Iig T T IM O tS S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STH4N90 STH4N90F! dss 900 V 900 V R DS on Id < 3.2 Q < 3.2 Q 4.2 A 2.7 A . TYPICAL RDS(on) = 2.9 Q . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED

diode sg 52

Abstract: diode sg 5 ts diode sg 79 SG-52 diode 131706 diode sg 38 h07v-k UL VlI15 diode sg 69 1N4007 BL
Contextual Info: Feed-through terminals for initiators and actuators DLI 2.5 DLI 2.5 LD W Dimensions Width / length / height mm with TS 35 x 7,5 W Insulation stripping length/clamping screw/screwdriver blade VDE rated data, VDE 0611 Part 1/8.92/IEC 947-7-1 Rated voltage / current / cross-section

diode 1n4007

Abstract: diode sg 38 131706 diode sg 46 diode,1N4007 Diode -1N4007 SG DIODE MARKING diode sg 5 ts diode 1N4007 terminal 131270
Contextual Info: Feed-through terminals for initiators and actuators DLI 2.5 DLI 2.5 LD W Dimensions Width/length/height mm With TS 35 x 7.5 W DLI 2.5 LD PNP W DLD 2.5 NPN W W 6/65/49 6/65/49 6/65/49 6/82/49 Wire strip length/terminal screw/blade dimension 7 mm/M 2.5/3.5 x 0.6

sgsp365

Abstract: sp365 SGSP465 p466 sgsp466 SGSP464 sgsp564 S 566 b P565 SGSP566
Contextual Info: S 6 S-THOHSON 0 7 E ' •• : - , SGSP364/P365/P366 SGSP464/P465/P466 ; . SG SP 56 4 /P 56 5 /P 5 6 6 73C D | 17395 HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V ds •d l m • Ptot Tstg Tj (•) Pulse w idth lim ited b y safe operating area

SG DIODE

Abstract: diode sg-64 diode sg 71
Contextual Info: W83773G/SG W83773G / W83773SG Nuvoton H/W Monitoring IC DATE: OCTOBER 21TH, 2009 REVISION: 1.2 -I- W83773G/SG TABLE OF CONTENTS- 1. GENERAL DESCRIPTION . 1

SEMIKRON SKIIP 20 NAB 12 T 17

Abstract: semikron skiip 21 nab 12 T 31 semikron skiip 21 nab 063 T 40 Semikron skiip 31 nab 12 skiip 10 nab 063 T 10 Semikron skiip 31 nab 12 T 10 SKiiP 31 NAB 12 T 16 semikron skiip nab 06 semikron skiip 32 nab 12 semikron skiip 32 nab 12 t 7
Contextual Info: se MIKROn SKiiP SG NAB GB Absolute Maximum Ratings Symbol C onditions 1 Values Units T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C 6GG ± 2G S6 I 25 72 I 5G 57 I SS 114 I 76 V V A A A

SP571

Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472
Contextual Info: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿| |SGSP571/F572| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field

semikron skiip 31 nab 12

Abstract: semikron skiip 32 nab 12 SEMIKRON SKIIP 20 NAB 12 T 17 semikron skiip 31 Semikron skiip 31 nab 12 T 16 semikron skiip 31 nab 125 t 12 skiip 31 nab 125 t 12 Semikron skiip 31 nab Semikron skiip 31 nab 12 T 10 semikron skiip nab
Contextual Info: se MIKROn SKiiP 31 NAB GB Absolute Maximum Ratings Symbol Conditions 1 Values Units Theatsink = 25 I SG oC tp < 1 ms; Theatsink = 25 I SG C Theatsink = 25 I SG oC tp < 1 ms; Theatsink = 25 I SG C 6GG ± 2G 5G I 35 1GG I 7G 57 I 3S 114 I 76 V V A A A A SGG

diode sg 35

Abstract: diode sg 08
Contextual Info: f Z T SGS-THOMSON ^7# IM »ILI(g¥^®Rl(3S STPR1020CB(-TR HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS If(av) 2x4A V rrm 200 V trr (max) 35 ns PRELIMINARY DATASHEET FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ SUITED FOR SMPS AND DRIVES

diode sg 44

Abstract: SG-45 diode diode sg 03
Contextual Info: r z 7 S C S -T H O M S O N ^ 7 # GfflD G3®ilLiiO T®M ]D©i S T P S 2 0 L 4 0 C F /C W POWER SCHOTTKY RECTIFIERS MAJOR PRODUCTS CHARACTERISTICS lF av 2 x 10 A V rrm 40 V Tj 125°C VF(max) 0.5 V ISOWATT220AB STPS20L40CF FEATURES AND BENEFITS • LOW FORWARD VOLTAGE DROP MEANING

TP10N

Contextual Info: £ 7 7 SGS-THOMSON k7#s. BD glSÌ(S ilLI(@T^ liD(ei Application Specific Discretes a q 25 n TSIxxBI TER M IN AL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION Telecom equipment requiring combined protection against transient overvoltages and

ph-8 diode

Abstract: varactor diode X-band gaas varactor diodes x-band diode
Contextual Info: Package Type GaAs Schottky Barrier Diodes Single diodes Electrical characteristics Ta = 25 tl Absolute maximum ratings Package type Type No. Rs@ IF C tsf Applications lo (mA) VR (V) Cl (pF) f (MHz) Rs CQ) Vf @ If t £ @ f' PLO If (mA) LC (dB) (GHz) Pio (mW)

diode sg 87

Abstract: P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21 SP301
Contextual Info: S G S -T H O M S O N 73C D7E 17 282 | 7 ‘i 2 c] 2 3 ? 00177Ö 5 D Q | y . 0 7 iX V '' SGSP101/P102 * S ^ > SGSP201/P202 N-CHANNEL POWER MOS TRANSISTORS ’ sgsp 301/P30Z HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate

Contextual Info: PS51787 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Intellimod Module Dual-In-Line Intelligent Power Factor Correction Module 20 Amperes/600 Volts G E F D D 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13

PS51787

Abstract: diode sg 71 diode sg 87 diode sg 38 bridgeless ic diode sg 46 bridgeless diode sg 28 SG 27 surge current n2 Diode Zener
Contextual Info: PS51787 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com G E F D D 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 F F D 12 11 10 D F F 6 5 4 9 8 7 M L D D DETAIL "A" 3 2 1 P 29 S 30 J B N K H HEATSINK U SIDE V P

PS51789

Abstract: bridgeless SG 27 surge current power factor correction wiring diode sg 46 diode sg 38
Contextual Info: PS51789 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com G E F D D 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 F F D 12 11 10 D F F 6 5 4 9 8 7 M L D D DETAIL "A" 3 2 1 P 29 S 30 J B N K H HEATSINK U SIDE V P

T+3512+H+diode

Contextual Info: PS51789 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Intellimod Module Dual-In-Line Intelligent Power Factor Correction Module 30 Amperes/600 Volts G E F D D 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13

G10 zener diode

Abstract: "RCA Solid State thyristor SGT03U13 SGT06U13 SGT23U13 Surgector dw0t
Contextual Info: G E SOLI» STATE Gl 3875081 G E SOLID STATE ’" D e | 3fl750àl0Q17fa34 ' 0 ÏÊT 17634 T -K '1 3 ' D - S U R G E C T O R s

Contextual Info: SGT27B27, SGT27B27A, SGT27B27B Bidirectional Transient Surge Suppressors January 1998 S U T Q e C tO r Features Description • Clamping V oltage. 230V or 270V These surgector devices are designed to protect telecom m u­