DIODE SG 35 Search Results

BAR19

Contextual Info: C T SG S-TH O M SO N ^ 7 # . HDlgœilLIgTOOIfSlDgi BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Repetitive Peak Reverse Voltage

Contextual Info: /= T SG S-TH O M SO N BAT 41 SMALL SIGNAL SCHO I IKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex­ cessive voltage such as electrostatic discharges.

ESM4045DV

Contextual Info: SG S-TH O M SO N ESM4045DV NPN DARLINGTON POWER MODULE . . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R,h JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

Schaffner IU 1237

Abstract: Schaffner 1237 NSG506C 7R2R23
Contextual Info: C T SG S-THO M SO N LDP24M TRANSIL LOAD DUMP PROTECTION PRELIMINARY DATASHEET • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION . HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE a COMPLIANT WITH MAIN STANDARDS

SG40TC10M

Abstract: schottky diode marking A7 marking c1j c1j marking
Contextual Info: Schottky Barrier Diode mtm OUTLINE Twin Diode SG 40TC 1OM 100 V 40 A Feature • Tj=175°C • Full Molded • Tj=175°C • IS I r =60|j A • • L o w Ir = 6 0 | j A • Resistance for thermal run-away • Dielectric Strength 2kV U 1C < 11 • ig iU ÎŒ 2kV«IŒ

Contextual Info: HI TAC HI/ OPTOELECTRONICS S^E D MM T b SG S D0120L42 HL7838G •HIT4 GaAIAs LD Description The HL7838G is a 0.78 pm band GaAIAs laser diode with a double heterojunction structure and is appro­ priate as the light source for various optical application devices, including laser beam printers and laser

SGS25DB070D

Abstract: LC 0809 HALF BRIDGE NPN DARLINGTON POWER MODULE NPN DARLINGTON POWER MODULE sgs25D
Contextual Info: 3QE D • rz 7 ^ 7# TWSB? Q030bcJb D ■ SC S-TH O M SO N KilD DlH] [l[LiOU^(Q lD(gi s g S-THOMSON '" f ‘3> W 5 SG S25DB070D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS) . LOW Rth JUNCTION TO CASE > FREEWHEELING DIODE

FTO-220G

Abstract: J533 J533-1
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 40 T C 1 2 M U n it : m m Package I FTO-220G Weight J.54g Typ o v h i j y iw ! ) 120V 40A 4.5 Feature • T j=175°C • T j= 1 7 S f C • y jis t- ib • Full M olded K • I r=60^A • Low lR=60pA • * W I Æ ® e ï: U C C IA

73b21

Contextual Info: r Z Z SG S -T H O M S O N • 7 f raooasiiLiieTr^omies S T T B 8 0 6 D l TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 8A V rrm 600V t r (typ) 50ns Vf (max) 1.3 V k- w - V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

diode sg 46

Abstract: SG DIODE MARKING diode sg 52 IGBT 2000V .50A
Contextual Info: £ ÿ j SG S-TH O M SO N n0 œ i l L I 0 ra [iïlBCi S T T A 5 1 2 D /F TURB O SW ITC H ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V (typ) 45ns (max) 2.0V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS

semikron skiip 31 nab 12

Abstract: semikron skiip 32 nab 12 SEMIKRON SKIIP 20 NAB 12 T 17 semikron skiip 31 Semikron skiip 31 nab 12 T 16 semikron skiip 31 nab 125 t 12 skiip 31 nab 125 t 12 Semikron skiip 31 nab Semikron skiip 31 nab 12 T 10 semikron skiip nab
Contextual Info: se MIKROn SKiiP 31 NAB GB Absolute Maximum Ratings Symbol Conditions 1 Values Units Theatsink = 25 I SG oC tp < 1 ms; Theatsink = 25 I SG C Theatsink = 25 I SG oC tp < 1 ms; Theatsink = 25 I SG C 6GG ± 2G 5G I 35 1GG I 7G 57 I 3S 114 I 76 V V A A A A SGG

BL0104-21-350

Abstract: SG DIODE diode sr 60
Contextual Info: 26mm LED LAMP CLUSTER ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES BL0104-21-350 SUPER BRIGHT RED BLUE SUPER BRIGHT GREEN Description Features HIGH VISIBILITY. The Super Bright Red source color devices are made WATER PROOF PACKAGE WITH HOOD SUITABLE

diode sg 35

Abstract: diode sg 08
Contextual Info: f Z T SGS-THOMSON ^7# IM »ILI(g¥^®Rl(3S STPR1020CB(-TR HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS If(av) 2x4A V rrm 200 V trr (max) 35 ns PRELIMINARY DATASHEET FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ SUITED FOR SMPS AND DRIVES

diode sg 52

Abstract: diode sg 5 ts diode sg 79 SG-52 diode 131706 diode sg 38 h07v-k UL VlI15 diode sg 69 1N4007 BL
Contextual Info: Feed-through terminals for initiators and actuators DLI 2.5 DLI 2.5 LD W Dimensions Width / length / height mm with TS 35 x 7,5 W Insulation stripping length/clamping screw/screwdriver blade VDE rated data, VDE 0611 Part 1/8.92/IEC 947-7-1 Rated voltage / current / cross-section

diode 1n4007

Abstract: diode sg 38 Diode -1N4007 diode,1N4007 diode sg 5 ts f10sg 31916
Contextual Info: Feed Through Terminals Screw Clamp 35 mm DIN-Rail Terminals Multiple Level S ensors DLI 2.5 The DLI and DLD see pages 2/10-11 well-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring power to the assembly. The

p217s

Abstract: p317 w55c p217 ic 17358 17356 C82 to-220 DIODE C06 15 C82J W25-C
Contextual Info: S G S-THOnSON D7E 1 73C 1 7 355 SGSP216/P2I7 1 SGSP316/P317 ] SGSP516/P517 ; HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V DGR V qs Id Idlm •! P.0« "^stg Tl o Q01?flSû 1 T 3 9 - / / N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cell silicon gate

SGSP256

Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
Contextual Info: S G S-THOMSON D7E D | ÏTSTSB? 0017630 b | / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

SGS911

Abstract: IC 638S SGS910 BU911 1421sg S912 638s
Contextual Info: S-THOMSON 0 7 E D | 7=12^537. 0 0 1 7 4 4 0 4 | 6 7C 15 350 D T-33-29 MULT1EPITAXIAL PLANAR NPM H IG H V O L T A G E P O W E R D A R L IN G T O N S The S G S9 1 0 , S G S 9 1 1, S G S 9 1 2 and B U 910, B U 9 1 1, B U 9 1 2 are silicon multiepitaxial planar

STTA3006PI

Abstract: stta 50 a diode 600v high
Contextual Info: £ ÿ j SGS-THOMSON n0œilLI0ÎIM [iïlBCi STTA3006P I TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 30A V rrm 600V tr r V f (typ) 35ns (max) 1.5V FEATURES AND BENEFITS • SPECIFICTO ’’FREEWHEEL MODE” OPERA­

SGS-Thomson mosfet

Contextual Info: £Z7 SGS-THOMSON ^ 7 # M »iLiOT(s iOOS STTA3006CW TURBOSWITCH ”A ”. ULTRA-FAST HIGH VOLTAGE DIODES MAIN PRODUCTS CHARACTERISTICS 2 x 15A I f (a v ) V Vf 600V rrm (typ) 35ns (max) 1.6V trr P R E L IM IN A R Y D A T A S H E E T FEATURES AND BENEFITS

Contextual Info: SGM9116 Triple, 35MHz, 6th Order HDTV Video Filter Driver PRODUCT DESCRIPTION FEATURES The SGM9116 is a video buffer which integrates triple • Triple 6th Order 35MHz HD Filters 6dB Gain rail-to-rail output driver and triple 6th output • Transparent Input Clamping

sg3625a

Abstract: application notes sg2525a SG3525A application note SG3527A application note SG2526A SG352SA 3527am
Contextual Info: LINEAR INTEGRATED CIRCUITS TYPES SG1525A, SG1527A, SG2525A, SG2527A, SG3525A, SG3527A PULSE-WIDTH MODULATION CONTROLLERS 02 8 0 6 , SEPTEM BER 1983 • Complete PWM Power Control Circuitry • 8-Volt to 35-Volt Operation • 5.1-Volt Reference Trimmed to ± 1 %

SEMIKRON SKIIP 20 NAB 12 T 17

Abstract: semikron skiip 21 nab 12 T 31 semikron skiip 21 nab 063 T 40 Semikron skiip 31 nab 12 skiip 10 nab 063 T 10 Semikron skiip 31 nab 12 T 10 SKiiP 31 NAB 12 T 16 semikron skiip nab 06 semikron skiip 32 nab 12 semikron skiip 32 nab 12 t 7
Contextual Info: se MIKROn SKiiP SG NAB GB Absolute Maximum Ratings Symbol C onditions 1 Values Units T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C 6GG ± 2G S6 I 25 72 I 5G 57 I SS 114 I 76 V V A A A

LT/SG3527A

Abstract: 27aj LT/SG3525A
Contextual Info: Regulating Pulse Width Modulators KATURCS DCSCRIPTIOn •Undervoltage Lockout with Hysteresis ■Guaranteed 1% 5.1V Reference ■Guaranteed 10mV/1000 Hr Long Term Stability ■Latching PWM ■8V to 35V Operation ■100Hz to 400kHz Oscillator ■400mA Source and Sink Current