diode MARKING CODE sg
Abstract: marking code SG diode sg 03 sg diode code marking MARKING CODE sg 06 SG DIODE RB520S-30 MARKING SG diode marking sg code sg
Text: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications Features PINNING • Extremely small surface mounting type. DESCRIPTION PIN • High reliability. 1 Cathode 2 Anode 2 1 SG Top View Marking Code: "SG"
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RB520S-30
OD-523
OD-523
diode MARKING CODE sg
marking code SG
diode sg 03
sg diode code marking
MARKING CODE sg 06
SG DIODE
RB520S-30
MARKING SG
diode marking sg
code sg
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SMD MARKING CODE sg
Abstract: diode MARKING CODE sg smd diode marking sG MARKING CODE sg 06 diode sg 01 diode smd marking code SG SG DIODE MARKING diode smd code SG sg smd code smd "code rc" transistor
Text: SB520WT SCHOTTKY BARRIER DIODE Features PINNING • Ultra small SMD package DESCRIPTION PIN • Very low forward voltage 1 Cathode 2 Anode Applications 2 1 • Ultra high speed switching SG RC • Voltage clamping • Low current rectification Top View Top
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SB520WT
OD-523
OD-523
SMD MARKING CODE sg
diode MARKING CODE sg
smd diode marking sG
MARKING CODE sg 06
diode sg 01
diode smd marking code SG
SG DIODE MARKING
diode smd code SG
sg smd code
smd "code rc" transistor
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Untitled
Abstract: No abstract text available
Text: HE7601SG GaAIAs IRED Description T he H E 7 6 0 1 SG is a 770 nm band G aA lA s infrared light em itting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. features Package Type • HE7601SG : SG
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HE7601SG
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BAR19
Abstract: No abstract text available
Text: C T SG S-TH O M SO N ^ 7 # . HDlgœilLIgTOOIfSlDgi BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Repetitive Peak Reverse Voltage
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Untitled
Abstract: No abstract text available
Text: /= T SG S-TH O M SO N BAT 41 SMALL SIGNAL SCHO I IKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex cessive voltage such as electrostatic discharges.
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220v 25a diode bridge
Abstract: No abstract text available
Text: rZ J SG S-THOM SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION ■ CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 jis . VOLTAGE RANGE FROM 120V to 270V ■ Maximum current : lo = 0.5
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away
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FTO-220G
J533-1)
SG30TC12M
50IIz
J533-1
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Untitled
Abstract: No abstract text available
Text: SG S-TH O M SO N RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ BDX53F BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
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BDX53F
BDX54F
BDX53F
T0-220
BDX54F.
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ESM3030DV
Abstract: No abstract text available
Text: SG S-TH O M SO N RülDigœilLIg'iriûiDeS ESM3030DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT
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ESM3030DV
ESM3030DV
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ESM4045DV
Abstract: No abstract text available
Text: SG S-TH O M SO N ESM4045DV NPN DARLINGTON POWER MODULE . . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R,h JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
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ESM4045DV
ESM4045DV
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Untitled
Abstract: No abstract text available
Text: £ ÿ j SG S-TH O M SO N D»ilLiœ s R(|D(êS BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre
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300ns
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220v 25a diode bridge
Abstract: TSI62B5 220v 5a diode bridge TSI120 TSI200B5 TSI120B5 TSI150B5 TSI180B5 TSI270B5 sgs marking code
Text: [= 7 SG S-THO M SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION . CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 xs . VOLTAGE RANGE FROM 62V to 270V ■ Maximum current: lo = 0.5A
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10/700MS
TSI62B5
TSI120B5
TSI150B5
TSI180B5
TSI200B5
TSI270B5
TSI62
TSI120
TSI150
220v 25a diode bridge
220v 5a diode bridge
TSI270B5
sgs marking code
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ByV schottky
Abstract: No abstract text available
Text: C T SG S-TH O M SO N ^T/.llD lgœ ilLIgTrœ M gi BYV10-20A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre
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BYV10-20A
ByV schottky
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Schaffner IU 1237
Abstract: Schaffner 1237 NSG506C 7R2R23
Text: C T SG S-THO M SO N LDP24M TRANSIL LOAD DUMP PROTECTION PRELIMINARY DATASHEET • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION . HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE a COMPLIANT WITH MAIN STANDARDS
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LDP24M
-SAEJ1113A.
S0-10TM
Schaffner IU 1237
Schaffner 1237
NSG506C
7R2R23
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE SG 30TC 15M 150V 30A Feature • Tj=150°C • T j= i5 r c • High lo Rating • 7 / iæ - ju ^ • lR = 4 0 p A • Full Molded • Low Ir=40(jA • *& « £ « & : u c < u • Resistance fo r thermal run-away
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transistor 467 sgs
Abstract: 0809 al diode sg 5 ts sgs30da070
Text: 30E i • 7*121237 QQ3Qbb4 =1 ■ /T T SCS-THOMSON ^ 7 # s IL E « ! ' T i3 3 - ' S 5 " SG S30D A 070D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS . LOW Rth JUNCTION TO CASE ■ FREEWHEELING DIODE
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O-240)
PC-029«
transistor 467 sgs
0809 al
diode sg 5 ts
sgs30da070
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Untitled
Abstract: No abstract text available
Text: £ ÿ j SG S-TH O M SO N n0œilLI0ra [iïlBCi STTA1212D TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 12A V rrm 1200V (typ) ns (max) V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE
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STTA1212D
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CB417
Abstract: smd diode Coloured band marked devices Smd code S08 CB429 DIL20 F126 S020 T0220AB SOD-6 DIMENSIONS CB417
Text: LVT3V3 SMLVT3V3 / = T SG S-THO M SO N * * œ ^ M 0 M ( § s TRANSIL FEATURES • ■ ■ ■ ■ UNDIRECTIONAL TRANSIL DIODE. PEAK PULSE POWER= 600 W @ 1ms. REVERSE STAND OFF VOLTAGE = 3.3 V. LOW CLAMPING FACTOR. FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR -
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CB472.
CB473.
DIL20
T0220AB
00faM52
CB417
smd diode Coloured band marked devices
Smd code S08
CB429
F126
S020
SOD-6
DIMENSIONS CB417
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FTO-220G
Abstract: J533 J533-1
Text: Schottky Barrier Diode Twin Diode OUTLINE SG 40 T C 1 2 M U n it : m m Package I FTO-220G Weight J.54g Typ o v h i j y iw ! ) 120V 40A 4.5 Feature • T j=175°C • T j= 1 7 S f C • y jis t- ib • Full M olded K • I r=60^A • Low lR=60pA • * W I Æ ® e ï: U C C IA
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SG40TC12M
120V40A
60ljA
FTO-220G
J533-1
FTO-220G
J533
J533-1
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diode sg 52
Abstract: mosfet 1200V 25A MOROCCO B 108 B
Text: £ y j SG S-TH O M SO N TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 25A V rrm 1200V (typ) 60ns (max) 1.9V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN
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Diode MARKING S37
Abstract: transient voltage suppressor diode LDP24AS DTR7637 DIODE MARKING CODE 623
Text: r= 7 SG S-TtfO M SO N * 7 £ [M M iL E g ïM O g S LDP24AS TRANSIL LOAD DUMP PROTECTION FEATURES • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION ■ HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE ■ COMPLIANT WITH MAIN STANDARDS
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LDP24AS
Diode MARKING S37
transient voltage suppressor diode
LDP24AS
DTR7637
DIODE MARKING CODE 623
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Untitled
Abstract: No abstract text available
Text: HI TAC HI/ OPTOELECTRONICS S^E D MM T b SG S D0120L42 HL7838G •HIT4 GaAIAs LD Description The HL7838G is a 0.78 pm band GaAIAs laser diode with a double heterojunction structure and is appro priate as the light source for various optical application devices, including laser beam printers and laser
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D0120L42
HL7838G
HL7838G
44Tb205
001204b
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE SG 20TC1OM 100V 20A Feature • • • • • • T j= i5 r c • 7 J IÆ -J U K • (S lR = 3 0 p A • j r iiìè s b c u c < u •« » W Œ 2 k V S S I Tj=150°C Full Molded Low lR=30pA Resistance for thermal run-away
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20TC1OM
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SC-0351
Abstract: No abstract text available
Text: rrr “ 7# sg s -th o m s o n m m s x m iim m im m b u lth s d HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . NPN TRANSISTOR . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE • HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR
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BULT118D
SC-0351
SC-0351
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