sfp transceiver
Abstract: No abstract text available
Text: PB4-S4-4103L www.palconnusa.com Product Overview The PB4-S4-4103L of Small Form Factor Pluggable SFP transceiver module is specifically designed for high performance integrated single data link over single mode optical fiber. The high-speed laser diode and photo diode are provided as a light source and a detector, respectively. An EEPROM
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PB4-S4-4103L
PB4-S4-4103L
EN60825,
EN60950.
1550nm
1310nm
10kohms
sfp transceiver
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S4 DIODE schottky
Abstract: MARKING S4 diode schottky s4 schottky diode DIODE marking S4 sod marking code s4 diode sod-523 S4 1SS389 1ss389
Text: 1SS389 Schottky Barrier Diode SOD-523 Features Low forward voltage. Small package. Applications Dimensions in inches and millimeters Schottky diode in surface mounted circuits. Ordering Information Type No. Marking 1SS389 S4 Package Code SOD-523
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1SS389
OD-523
1SS389
100mA
S4 DIODE schottky
MARKING S4 diode schottky
s4 schottky diode
DIODE marking S4 sod
marking code s4 diode sod-523
S4 1SS389
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S4 DIODE schottky
Abstract: MARKING S4 diode schottky DIODE marking S4 sod S4 1SS389 marking code s4 diode sod-523 1SS389 schottky diode 100A Marking S4 SOD 023 galaxy s4 S4 DIODE
Text: BL Galaxy Electrical Production specification Schottky Barrier Diode 1SS389 FEATURES z Low forward voltage. z Small package. Pb Lead-free APPLICATIONS z Schottky diode in surface mounted circuits. SOD-523 ORDERING INFORMATION Type No. Marking 1SS389 S4 Package Code
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1SS389
OD-523
BL/SSSKD005
S4 DIODE schottky
MARKING S4 diode schottky
DIODE marking S4 sod
S4 1SS389
marking code s4 diode sod-523
1SS389
schottky diode 100A
Marking S4 SOD 023
galaxy s4
S4 DIODE
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes SOD-523 1SS389 SCHOTTKY BARRIER DIODE FEATURES High Speed High Reliability Small Package Low Forward Voltage APPLICATIONS High Speed Switching MARKING: S4
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OD-523
OD-523
1SS389
100mA
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S4 DIODE schottky PACKAGE T-1
Abstract: SCHOTTKY DIODE S6 09 SD103CWS SD103AWS SD103BWS
Text: SD103AWS.SD103CWS SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING DESCRIPTION PIN Features • Low Forward Voltage 1 Cathode 2 Anode 2 1 Top View Marking Code: SD103AWS "S4" SD103BWS "S5" SD103CWS "S6" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC
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SD103AWS.
SD103CWS
SD103AWS
SD103BWS
OD-323
S4 DIODE schottky PACKAGE T-1
SCHOTTKY DIODE S6 09
SD103CWS
SD103AWS
SD103BWS
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S4 46a DIODE schottky
Abstract: APT0406 APT0501 APT0502 APTM50HM75SCTG A1012-0
Text: APTM50HM75SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module VBUS CR1A Q3 G3 CR2A Q2 S3 CR4A CR2B CR4B Q4 G2 G4 S2 S4 0/VBUS NTC1 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior
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APTM50HM75SCTG
S4 46a DIODE schottky
APT0406
APT0501
APT0502
APTM50HM75SCTG
A1012-0
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Untitled
Abstract: No abstract text available
Text: TAK CHEONG 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Device Device Type Marking 1SS355 S4 Small Outline Flat Lead Plastic Package High Speed Switching Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted Parameter Power Dissipation
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200mW
OD-323
1SS355
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S4 DIODE schottky
Abstract: S4 55 DIODE schottky device marking code S4 SD103 SD103AWS SD103BWS SD103CWS s6 schottky sd103cws semtech
Text: SD103AWS thru SD103CWS SCHOTTKY DIODE PINNING DESCRIPTION PIN Features • For general purpose applications • The SD103 series is a metal-on-silicon Schottky 1 Cathode 2 Anode 2 1 barrier device which is protected by a PN junction S4 guard ring. • Top View
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SD103AWS
SD103CWS
SD103
SD103AWS:
SD103BWS:
SD103CWS:
OD-323
SD103AWS
SD103BWS
S4 DIODE schottky
S4 55 DIODE schottky
device marking code S4
SD103BWS
SD103CWS
s6 schottky
sd103cws semtech
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SD103
Abstract: SD103AWS SD103BWS SD103CWS device marking code S4 DIODE marking S4 sod
Text: SD103AWS thru SD103CWS SCHOTTKY DIODE PINNING DESCRIPTION PIN Features • For general purpose applications • The SD103 series is a metal-on-silicon Schottky 1 Cathode 2 Anode 2 1 barrier device which is protected by a PN junction S4 guard ring. • Top View
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SD103AWS
SD103CWS
SD103
SD103AWS:
SD103BWS:
SD103CWS:
OD-323
SD103AWS
SD103BWS
SD103BWS
SD103CWS
device marking code S4
DIODE marking S4 sod
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S4 DIODE schottky
Abstract: SD103 SD103AWS SD103BWS SD103CWS sd103cws semtech
Text: SD103AWS thru SD103CWS SCHOTTKY DIODE PINNING DESCRIPTION PIN Features • For general purpose applications • The SD103 series is a metal-on-silicon Schottky 1 Cathode 2 Anode 2 1 barrier device which is protected by a PN junction S4 guard ring. • Top View
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SD103AWS
SD103CWS
SD103
SD103AWS:
SD103BWS:
SD103CWS:
OD-323
SD103AWS
SD103BWS
S4 DIODE schottky
SD103BWS
SD103CWS
sd103cws semtech
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Untitled
Abstract: No abstract text available
Text: GWM 160-0055P3 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode
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160-0055P3
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smd diode code SL
Abstract: smd diode g6 DIODE S4 39 smd diode smd diode code g3 SMD mosfet MARKING code TC S4 SMD Marking Code SMD MARKING CODE s4 smd diode code g4 smd diode code s3 smd diode marking s4 smd diode S6
Text: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode
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160-0055P3
smd diode code SL
smd diode g6 DIODE S4 39 smd diode
smd diode code g3
SMD mosfet MARKING code TC
S4 SMD Marking Code
SMD MARKING CODE s4
smd diode code g4
smd diode code s3
smd diode marking s4
smd diode S6
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Untitled
Abstract: No abstract text available
Text: STANDARD SP4T SWITCHES The S4 series of single pole, four throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible
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10MHz
18GHz
26GHz
/-12V,
/-15V
S4-0205
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Untitled
Abstract: No abstract text available
Text: SINGLE-POLE, FOUR-THROW SWITCHES The S4 series of single pole, four throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible
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10MHz
18GHz
/-12V
-2-12-RC"
MIL-C-22750
26GHz
S4-1209
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smd diode code g3
Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
Text: Advanced Technical Information Three phase full Bridge GWM 160-0055X1 VDSS = 55 V ID25 = 160 A RDSon typ. = 2.3 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C
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160-0055X1
160-0055X1-BL
160-0055X1-SL
160-0055X1-SMD
160-0055X1
smd diode code g3
smd diode code g4
smd diode g6 DIODE S4 39 smd diode
smd diode S4
smd diode code mj
smd diode S6
DIODE marking S4 45
SMD S6 55 A
smd diode code SL
SMD diode MARKING CODE g6
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smd diode S6
Abstract: smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V =1 80 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004P3
220-003P3-SMD
220-004P3
20081126f
smd diode S6
smd diode S4
S4 DIODE
SMD MARKING g5
smd diode g5
smd diode g6
Diode S4
g1 smd diode
S3 marking DIODE
SMD MARKING s6
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smd diode S4
Abstract: No abstract text available
Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004P3
100-01X1-SMD
220-004P3
20070906c
smd diode S4
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smd diode S4
Abstract: smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5
Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004P3
diod007
20070628b
220-004P3-SL
220-04P3-BL
220-004P3
smd diode S4
smd diode code g3
SMD MARKING CODE 503 K
smd diode S6
S4 DIODE
S6 diode
smd diode marking code L2
SMD MARKING g3
smd diode code s6
SMD MARKING g5
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smd diode g6
Abstract: smd S4 36 SMD diode MARKING CODE g6 smd g5
Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004P3
220-003P3-SMD
220-004P3
20080527e
smd diode g6
smd S4 36
SMD diode MARKING CODE g6
smd g5
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Diode smd s6 95
Abstract: DIODE S4 66 smd diode S6 48 Diode smd s6 46 Diode smd s6 68 Diode smd s4 95 SMD MARKING g5 DIODE 542 SMD smd diode code g3 smd diode g6
Text: GWM 100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 100
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100-01X1
160-0055X1
20081126c
Diode smd s6 95
DIODE S4 66
smd diode S6 48
Diode smd s6 46
Diode smd s6 68
Diode smd s4 95
SMD MARKING g5
DIODE 542 SMD
smd diode code g3
smd diode g6
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Untitled
Abstract: No abstract text available
Text: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS
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160-0055X1
20070906d
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S4 DIODE
Abstract: No abstract text available
Text: 0 G lû 3 b 2 L IO • MITSUBISHI OPTICAL DEVICES FU-52SDU-F2/S2/F4/S4 DUPLEXER MODULE WITH SINGLEMODE FIBER PIGTAIL (1.3 um LD AND 1.3 miti PD) DESCRIPTION FEATU RES Duplexer module FU-52SDU series incorporate a 1.3um laser diode, an InGaAs photodiode and
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FU-52SDU-F2/S2/F4/S4
FU-52SDU
S4 DIODE
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S4 DIODE sma
Abstract: Diode S4 sma S4L2
Text: SP4T SWITCHES Components The S4 series of single pole, four throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible
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10MHz
18GHz
MIL-STD-883
26GHz
/-12V,
/-15V
S4 DIODE sma
Diode S4 sma
S4L2
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Untitled
Abstract: No abstract text available
Text: SP4T SWITCHES Advanced Control Components Inc. The S4 series of single pole, four throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible
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OCR Scan
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10MHz
18GHz
26GHz
/-12V,
/-15V
S4-0303B
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