DIODE S1G Search Results

RB160-40

Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Contextual Info: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148

2510W

Abstract: RS1M diode
Contextual Info: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10

thyristor BT 161

Contextual Info: I . I Bulletin 127104 rev. A 09/97 International i q r Rectifier i r k . f 7 2 „ s e r ie s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features • 71 A Fast turn-off thyristor ■ Fast recovery diode ■ High surge capability

Contextual Info: • . I Bulletin 127093 rev. A 09/97 In te rn a tio n a l I R Rectifier i r k FAST THYRISTOR/ DIODE and . f i 5 2 . s e r i e s INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 150 A ■ Fast tu rn -o ff th yristo r ■ Fast recovery diode ■ High surge capability

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Contextual Info: IDTQS3VH126 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE IDTQS3VH126 QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

Contextual Info: IDTQS3VH126 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH IDTQS3VH126 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

Contextual Info: IDTQS3VH126 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE IDTQS3VH126 QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

Contextual Info: IDTQS3VH125 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE IDTQS3VH125 QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

Contextual Info: IDTQS3VH125 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH IDTQS3VH125 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

S1m diode

Abstract: diode s1m Taiwan SemiConductor S1M diode S1J s1m taiwan semiconductor S1J Diode S1A-35 s1m4
Contextual Info: S1A – S1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss

IDTQS3VH125

Abstract: QS3VH125
Contextual Info: IDTQS3VH125 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH125 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

IDTQS3VH125

Abstract: QS3VH125 3VH125
Contextual Info: IDTQS3VH125 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH IDTQS3VH125 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

Contextual Info: IDTQS3VH125 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH INDUSTRIAL TEMPERATURE RANGE IDTQS3VH125 QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

SMD MARKING CODE JYP

Abstract: JYP SOT23 Marking Code SMD za BAV199 MARKING A53 diode smd A53 SMD
Contextual Info: Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV199 PINNING • Plastic SMD package PIN DESCRIPTION • Low leakage current: typ. 3 pA 1 • Switching time: typ. 0.8 jxs 2 cathode • Continuous reverse voltage: 3 anode; cathode

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

DIODE SOT-23 PACKAGE

Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
Contextual Info: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package

1000C

Abstract: 2600C
Contextual Info: S1A thru S1M SERIES CHENG- YI SURFACE MOUNT RECTIFIER ELECTRONIC VOLTAGE RANGE 50 TO 1000 Volts CURRENT 1.0 Amperes SMB/DO-214AA FEATURES For surface mounted applications High tempreature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers

Contextual Info: Bulletin 127400 rev. A 09/97 International iffiR Rectifier IRK.430. SERIES THYRISTOR / DIODE and THYRISTOR / THYRISTOR SUPER MAGN-A-pak Power Modules Features • High current capability ■ 3000 V RMS Isolating voltage with non-toxic substrate ■ High surge capability

Contextual Info: Bulletin 127099 rev. A 10/97 International IÖ R Rectifier IRK.F200. SERIES MAGN-A-pak Power Modules FAST THYRISTOR/DIODEand THYRISTOR/THYRISTOR Features Fast tu rn -o ff th yristo r Fast recovery diode High surge capability E lectrically isolated baseplate

74F251

Abstract: IDTQS3251 QS3251
Contextual Info: IDTQS3251 HIGH-SPEED CMOS QUICKSWITCH 8:1 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 8:1 MUX/DEMUX FEATURES: • • • • • • • IDTQS3251 DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc

Contextual Info: S1A – S1M 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 60A Peak