DIODE S 488 Search Results

Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS79SB40 FEATURES DESCRIPTION • Low forw ard voltage Planar S chottky barrier diode encapsulated in an S C -79 S O D 523 ultra sm all

PHILIPS SMALL SIGNAL DIODE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page Datasheet M3D054 BAS32L/S High-speed diode Product specification 2001 Mar 01 Philips Semiconductors Product specification High-speed diode BAS32L/S FEATURES DESCRIPTION • Small hermetically sealed glass SMD package

nec d 588

Abstract: NEC DIODE LASER PS2001
Contextual Info: DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.

NX5501

Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.

S20LC20U

Abstract: kl 05 diode kl diode
Contextual Info: 7 -f> S U tipe Super Fast Recovery Diode Twin Diode I W v f-j& lg l S20LC20U OUTLINE DIMENSIONS Case : MTO-3P ü 200V 20A •trr3 5 n s •*È *» B Œ 2 K V S M S £5 * • S H « ÎS •yu-TU'fio t mm. OA • W g , FA RATINGS •Îê W it^ S Ë fë m A bsolute M ax im u m Ratings

nec d 588

Abstract: PX10160E
Contextual Info: DATA SHEET LASER DIODE NX8517XC Series 1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8517XC is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical

NX7314UA

Abstract: NX7315UA NX7312UA NX7313UA NX8310UA NX8311UD NX8510UD STM-16
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8510UD Series 1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8510UD is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical

BAI 59 DIODE

Abstract: T346 1PS59SB20 AN 6752
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T 1PS59SB20 Schottky barrier diode Product specification File under Discrete Semiconductors, SC10 Philips Sem iconductors 1998 Jul 28 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20

1PS59SB21

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T 1PS59SB21 Schottky barrier diode Product specification File under Discrete Semiconductors, SC10 Philips Sem iconductors 1998 Jul 28 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS59SB21

IRF7101

Abstract: IRF7421D1
Contextual Info: PD - 91411C IRF7421D1 PRELIMINARY FETKYä MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A A D A 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V

5M MARKING CODE SCHOTTKY DIODE

Abstract: HEXFET SO-8 marking ky fet MOSFET SO-8 IRF7807D1 EIA-541 807D1
Contextual Info: PD- 95304 IRF7421D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint Lead-Free Description A A D A 1 8 S 2 7 D S 3 6 D G 4

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Jul 16 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS76SB40 FEATURES DESCRIPTION • Low forw ard voltage Planar S chottky b a rrie r diode encapsulated in a S O D 323 ve ry sm all plastic

BAP51-03

Abstract: DIODE S4 52 diode AY 101 AY106 AY103
Contextual Info: DISCRETE SEMICONDUCTORS [M m S M EET BAP51 -03 General purpose PIN diode Preliminary specification Supersedes data of 1999 Apr 01 Philips Semiconductors 1999 May 10 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-03

Contextual Info: PD- 95304 IRF7421D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint Lead-Free A A D 1 8 S 2 7 D S 3 6 D G 4 5 D A VDSS = 30V

BFY 99

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8508 BFY10
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8508 Series 1 470 TO 1 610 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s, CWDM DESCRIPTION The NX8508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode coaxial module with an

Contextual Info: PD- 91411D IRF7421D1 FETKYä MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A A D 1 8 S 2 7 D S 3 6 D G 4 5 D A VDSS = 30V RDS on = 0.035Ω

EIA-541

Abstract: IRF7421D1 IRF7807D1 807d1
Contextual Info: PD- 91411D IRF7421D1 FETKYä MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A A D 1 8 S 2 7 D S 3 6 D G 4 5 D A VDSS = 30V RDS on = 0.035Ω

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAV199W Low-leakage double diode Product specification Supersedes data of 1998 Jan 09 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV199W

n 943 y

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBD6100 High-speed double diode Product specification Supersedes data of 1996 Sep 18 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode PMBD6100 FEATURES

smd p5c

Abstract: smd AYA
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBD7000 High-speed double diode Product specification Supersedes data of 1996 Sep 18 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode PMBD7000 FEATURES

double diode SMD A7p

Abstract: smd code A7p A7P smd a7p smd diode smd A7p diode A7p bav 17 diode A7P DIODE
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAV99 High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAV99 FEATURES DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAW156 Low-leakage double diode Product specification Supersedes data of 1996 Mar 13 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification Low-leakage double diode FEATURES BAW156 PINNING

Contextual Info: DISCRETE SEMICONDUCTORS P Â T Â S ln lE E T BAS216 High-speed switching diode 1999 Apr 22 Product specification Supersedes data of 1996 Apr 03 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed switching diode

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAW56 High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAW56 FEATURES DESCRIPTION