Photo diode TFK S 186 P
Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission
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MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
LL914
LL4150,
MMBD2104
Transistor NEC 05F
hp2835 diode
ZENER DIODE t2d
what is the equivalent of ZTX 458 transistor
MMBD2103
T2D DIODE 3w
T2D 8N
2n2222 as equivalent for bfr96
mmbf4932
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AEG TFK TELEFUNKEN
Abstract: TFK diodes 148 IR diodes TFK 4 040 thyristor aeg varactor diode bb 205 aeg thyristor tfk U 264 Pertinax AEG drill electrical connection diagram MINI MELF MARKING CODE GP
Text: TELEFUNKEN Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example: Material
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AEG TFK TELEFUNKEN
Abstract: TFK 802 BB205 thyristor aeg TFK 148 aeg rectifier varactor diode capacitance measurement aeg thyristor varactor s1 BA282
Text: Diodes Data Book 1996 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selector Guide – Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
MMBD2103
ZENER DIODE t2d
MMBD2101
MMBD2102
MMBD2104
SMD codes
bc107 TRANSISTOR SMD CODE PACKAGE SOT23
Transistor NEC 05F
BAT15-115S
NDS358N
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SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
SMD Codes
TRANSISTOR SMD T1P
MMBD2104
BAW92
smd transistor A6a
schottky diode s6 81A
a4s smd transistor
Transistor SMD a7s
transistor SMD P2F
MMBD2101
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Photo diode TFK S 186 P
Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Text: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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S2L20
Abstract: No abstract text available
Text: P y + v -w u s K tf-K - P X ^ - K U type Super Fast Recovery Diode Axial Diode • W f5\|->£I2I O U T L IN E D IM E N S IO N S S2L20U 200V 1.5A ■ R A T IN G S Absolute Maximum Ratings m ~~-—-_ ££ S3 E3 bLTt" Symbol g Item _ _ _ C onditions
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S2L20U
S2L20
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TFK 03 Diode
Abstract: diode s .* tfk S3L20 diode tfk s DIODE s3l20u
Text: P — T A rv -W U S K tf-K K U type Super Fast Recovery Diode Axial Diode • O U T L IN E D IM E N S IO N S S3L20U 2 0 0 V 3A ■ R A TIN G S Absolute Maximum Ratings * IE # a Item Symbol a ffir m T yp e No. ■—-_ a O perating J u n c tio n Tem perature
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S3L20U
S3L20U
50HzIE3£
TFK 03 Diode
diode s .* tfk
S3L20
diode tfk s
DIODE s3l20u
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1FI250B-060
Abstract: No abstract text available
Text: 1 FI250B-060 250a ^ • *± i W ’+ S i : O u tlin e D r a w in g s FAST RECOVERY DIODE MODULE ■ 4# : Features Short Reverse Recovery Time • t&mimtfm.'M Variety of Connection Menu •mm Insulated Type I Applications • Arc-Welders • Kffl • Free-Wheeling Diode
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FI250B-060
50/60HZ
300C30C3
1FI250B-060
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3 tfk 206
Abstract: SHINDENGEN DIODE
Text: ÿ i ' t - K ï v - i -;u 3 Pha>e Bridge Diode Diode Module mmtt'ikm S15VT o u t l i n e d im e n s io n s S15VTA 800V 15A •S Q IP A '^ -y •  ÎH Œ - B l FSM •y'jy V T A iM : ? ffl i t •I73> im-<yn—? •fa , RATINGS Absolute Maximum Ratings
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S15VT
S15VTA
S15VT60
S15VT80
S15VTA60
S15VTA80
50HziK3Srt,
3 tfk 206
SHINDENGEN DIODE
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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semikron skiip 1242 gb 120
Abstract: SKiiP 1242 GB 120 . 407 CTV N 407 Diode SKIIP DRIVER 1242 F 407 Diode
Text: s e M IK R O n SKiiP 1242 GB 120 - 407 CTV Absolute Maximum Ratings Symbol | Conditions 1> Values Units 12 0 0 V 900 V 1200 A °c V A A A kA2s IQBT & Inverse Diode V c es V c c 9 lc T i3) Viso!41 If I fm I fsm A Diode) Operating DC link voltage Theatsink —2 5 °C
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900tion
semikron skiip 1242 gb 120
SKiiP 1242 GB 120 . 407 CTV
N 407 Diode
SKIIP DRIVER 1242
F 407 Diode
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TFK diode
Abstract: diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3
Text: 17E D I ÖSSODSb DOOMS'} 3 m k l G G ^ ¡r milFWKSM electronic TFK 3080 D TELEFUNKEN ELECTRONIC C » « tiv « lK h f 0l09* tt [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T -3 3 ~ 3 r- Applications: • Motor-control 380 V-mains)
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S1000
2/1997-0888E
T0126
15A3DIN
TFK diode
diode tfk
TRANSISTOR BC 277
diode s .* tfk
tfk 045
TFK 220
transistor bf 244
76 TFK
244 tfk
diode 12A3
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diode B14A
Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
Text: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato*1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)
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00CHb51
000Rb52
T0126
15A3DIN
diode B14A
B14A diode
TFK 03 Diode
TFK3070D
TFK 001
B14A
23 TFK 001
TFK u 269
TFK 03
TFK3070
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tfk 19
Abstract: TFK 102 TFK 19 001 TFK 105 5070d TFK 282 TFK diode tfk 3b diode s .* tfk telefunken ta 750
Text: TELEFUNKEN ELECTRONIC 17E D • TTltUiPdDMKlMelectronic 6 1 2 0 0 % DODTbbS TFK 5070 D Crwtivt Tfchnolog* Preliminary specifications NPN Silicon Darlington Power Transistor r - 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)
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T0126
15A3DIN
tfk 19
TFK 102
TFK 19 001
TFK 105
5070d
TFK 282
TFK diode
tfk 3b
diode s .* tfk
telefunken ta 750
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diode tfk s 220
Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
Text: 17E I I B^SDDRb ODD^bS^ 3 • m ilF iy iim iM electronic Crt*tiv«1«chnolo$tt ALGG i l ? ■ TFK 3080 D TELEFUNKEN ELECTRONIC [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T-33-3£~ Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)
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S1000
O888E
T0126
15A3DIN
diode tfk s 220
tfk s 220
diode 12A3
rg4 77 diode
tfk s 92
TFK diode
tfk 3b
tfk transistor
Tfk 237
TCA 321
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Untitled
Abstract: No abstract text available
Text: M MOnOflOi4 MC74F40 Advance Information D ual 4-Input N AN O B uffer DUAL 4-INPUT NANO BUFFER FAST SC H O TfKY TTL CONNECTION DIAGRAM G UARANTEED OPERATING RANG ES Min Typ M ax Vcc Supply Voltage Parameter 74 4.5 5 5.5 V Ta Operating Ambient Temperature Range
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MC74F40
G32S6
51A-02
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SE110N
Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1488
2SA1492
SE110N
A4032
SE130N
SE005N
SE090N
high hfe transistor
FMQG5FM
SLA7022M
SE012
3gu diode
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ID73
Abstract: No abstract text available
Text: OM6021SC OM6023SC OM6Q22SC OM6Q24SC POWER MOSFETS IN HERMETIC PACKAGE 100V Thru 500V, Up To 35 Amp, N-Channel Power MOSFETs In JEDEC TO-259AA Package FEATURES • Isolated Side-Tab Hermetic Metal Package • Fast Switching, Low Drive Current • Ease of Paralleling For Added Power
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OM6021SC
OM6023SC
OM6Q22SC
OM6Q24SC
O-259AA
MIL-S-19500,
O-259AA
G0G1317
ID73
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TFK 03 Diode
Abstract: TLHR0400 tfk 605 R0400 tfk 635
Text: TELEFUNKEN ELECTRONIC 17E D • Ô^EOCHb OOOöTMQ IAL66 Q TLH.0400 •¡mySRSMKIM electronic CrMtiv* Techno o9 4 S High Efficiency LEDs 0 10 mm in tinted diffused packages Technology Color Type High Efficiency Bed TLHR 040. GaAsP on GaP Yellow TLHY 040. GaAsP on GaP
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IAL66
000BT44
TFK 03 Diode
TLHR0400
tfk 605
R0400
tfk 635
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IRF7316
Abstract: tfr 586
Text: International lOR Rectifier PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V q ss = -30V Rds oh = 0.058Q Description Fifth Generation HEXFETs from international Rectifier
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IRF7316
EIA-S41.
IRF7316
tfr 586
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