Untitled
Abstract: No abstract text available
Text: ES51998 60000counts DMM Analog front end/Insulation/Peak Features • 60000 counts dual-slope SADC (2 cnvs/s.) • Input signal full scale: 630mV (Max. 63000 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20 times/s • 100L LQFP package
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ES51998
60000counts)
630mV
000nF
ES636)
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LOG112
Abstract: LOG114 OPA132 OPA2380 OPA300 OPA335 OPA350 OPA380
Text: OPA380 OPA2380 SBOS291B − NOVEMBER 2003 − REVISED MAY 2004 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)
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OPA380
OPA2380
SBOS291B
90MHz
90MHz
OPA380
LOG112
LOG114
OPA132
OPA2380
OPA300
OPA335
OPA350
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LOG112
Abstract: LOG114 OPA132 OPA2380 OPA300 OPA335 OPA350 OPA380
Text: OPA380 OPA2380 SBOS291B − NOVEMBER 2003 − REVISED MAY 2004 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)
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OPA380
OPA2380
SBOS291B
90MHz
90MHz
OPA380
LOG112
LOG114
OPA132
OPA2380
OPA300
OPA335
OPA350
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Untitled
Abstract: No abstract text available
Text: ES51997 60000counts DMM Analog front end/Peak Features • 60000 counts dual-slope SADC (2 cnvs/s.) • Input signal full scale: 630mV (Max. 63000 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20 times/s • 100L LQFP package
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ES51997
60000counts)
630mV
000nF
counte70nF
ES636)
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far uv photodiode
Abstract: LOG112 LOG114 OPA132 OPA2380 OPA300 OPA335 OPA350 OPA380 SBOA060
Text: OPA380 OPA2380 SBOS291C − NOVEMBER 2003 − REVISED JUNE 2004 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)
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OPA380
OPA2380
SBOS291C
90MHz
far uv photodiode
LOG112
LOG114
OPA132
OPA2380
OPA300
OPA335
OPA350
OPA380
SBOA060
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OPA380 OPA2380
Abstract: AB-050 equivalent SBOS291A photodiode has capacitance of 5pf. bandwidth
Text: OPA380 OPA2380 SBOS291A − NOVEMBER 2003 − REVISED MARCH 2004 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)
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OPA380
OPA2380
SBOS291A
90MHz
OPA380 OPA2380
AB-050 equivalent
photodiode has capacitance of 5pf. bandwidth
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diode FS601
Abstract: No abstract text available
Text: ES51970 6000counts DMM Analog front end with Inrush Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s • 100L LQFP package
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ES51970
6000counts)
630mV
000nF
ES636)
diode FS601
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Untitled
Abstract: No abstract text available
Text: ES51990 6000counts DMM Analog front end Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s • 100L LQFP package
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ES51990
6000counts)
630mV
000nF
470nF
ES636)
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Untitled
Abstract: No abstract text available
Text: ES51995 6000counts DMM Analog front end with PEAK Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s • 100L LQFP package
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ES51995
6000counts)
630mV
000nF
ES636)
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Untitled
Abstract: No abstract text available
Text: ES51980 6000counts DMM Analog front end/Insulation/Inrush Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s
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ES51980
6000counts)
630mV
000nF
ES636)
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Untitled
Abstract: No abstract text available
Text: ES51996 6000counts DMM Analog front end/Insulation Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s • 100L LQFP package
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ES51996
6000counts)
630mV
000nF
60SCL
ES636)
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SCR 1989
Abstract: No abstract text available
Text: TCM1030, TCM1050 DUAL TRANSIENT-VOLTAGE SUPPRESSORS SCTS040B – JUNE 1989 – REVISED JUNE 1997 D D D D D D Meet or Exceed Bell Standard LSSGR Requirements Externally-Controlled Negative Firing Voltage . . . – 90 V Max Accurately Controlled, Wide Negative
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TCM1030,
TCM1050
SCTS040B
TCM1030
SCR 1989
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134 kHz RFID antenna design
Abstract: No abstract text available
Text: LMV221 www.ti.com SNWS018C – DECEMBER 2006 – REVISED MARCH 2013 LMV221 50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA Check for Samples: LMV221 FEATURES DESCRIPTION • • • • • • • The LMV221 is a 40 dB RF power detector intended
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LMV221
SNWS018C
LMV221
134 kHz RFID antenna design
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Untitled
Abstract: No abstract text available
Text: LMV221 www.ti.com SNWS018C – DECEMBER 2006 – REVISED MARCH 2013 LMV221 50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA Check for Samples: LMV221 FEATURES DESCRIPTION • • • • • • • The LMV221 is a 40 dB RF power detector intended
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LMV221
SNWS018C
LMV221
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Untitled
Abstract: No abstract text available
Text: LMV221 www.ti.com SNWS018C – DECEMBER 2006 – REVISED MARCH 2013 LMV221 50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA Check for Samples: LMV221 FEATURES DESCRIPTION • • • • • • • The LMV221 is a 40 dB RF power detector intended
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LMV221
SNWS018C
LMV221
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diode RP 4040
Abstract: diode RP 6040 DIODE REDRESSEMENT 4040 DIODE REDRESSEMENT RP 8040 X diode RP 6020 ic 4040 RC snubber circuit ku1010 RP 1240 M
Text: o THOMSON-CSF rectifier diode > 100A selector guide guide de sélection diodes de redressement ^ 100 A 143 new standard single phase all diodes metal stacks nouveaux ponts métalliques standards monophasés tout diodes IHOMSON-CSF T ype A v e ra g e o u tp u t
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TNF300
diode RP 4040
diode RP 6040
DIODE REDRESSEMENT 4040
DIODE REDRESSEMENT
RP 8040 X
diode RP 6020
ic 4040
RC snubber circuit
ku1010
RP 1240 M
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DIODE REDRESSEMENT 4040
Abstract: RP 8040 X diode RP 4040 la 8040 G 402 rp 402 rp KU 612 RP8040 DRA402 LA 4040
Text: rectifier diodes < 100 A diodes de redressement Types < 100 A T H O M S O N -C S F •o V r MVI I f SM 10 m s vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B ,(R ) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R)
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1000A2
2500A2
TNF300
DIODE REDRESSEMENT 4040
RP 8040 X
diode RP 4040
la 8040
G 402 rp
402 rp
KU 612
RP8040
DRA402
LA 4040
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diode RP 1040
Abstract: DRA 402 DIODE 1N SERIES DIODE DRA402 DRA 402 diode RP 4040 diode 1N 3768 r RP8040R fr 608 diode DIODE REDRESSEMENT 4040
Text: rectifier diodes < 100 A diodes de redressement < 100 A Types TH O M S O N -C SF •o V r MVI If SM 10 m s vF A (V) (A ) (V ) / if m ax 20 A 1N 1N 1N 1N 1N 1N 1N RN RN RN RN / T c a s e = 1 5 0 °C 248 B, (R) 249 B ,(R ) 250 B, (R) 1195 A , (R) 1196 A, (R)
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1000A2
2500A2
CB-3191
diode RP 1040
DRA 402 DIODE
1N SERIES DIODE
DRA402
DRA 402
diode RP 4040
diode 1N 3768 r
RP8040R
fr 608 diode
DIODE REDRESSEMENT 4040
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fr 608 diode
Abstract: DIODE REDRESSEMENT 1N SERIES DIODE B-408 diode ku 611 KU 612 diode 736 diode RP 4040 fr 608 KU1506
Text: rectifier diodes < 100 A diodes de redressement < 100 A Types THOMSON-CSF •o V r MVI I f SM 10 ms vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B,(R) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R) 1N 1198 A, (R)
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1000A2
2500A2
6xCB80
6xP150
6xTNF150
fr 608 diode
DIODE REDRESSEMENT
1N SERIES DIODE
B-408 diode
ku 611
KU 612
diode 736
diode RP 4040
fr 608
KU1506
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PA 0016 PIONEER
Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete
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J-23548
K28742
PA 0016 PIONEER
Pioneer PA 0016
transistors br 6822
MPF104
I9951D
Johnson motor 2 607 022 013
2SK109 equivalent
V01000J
DG5043CK
IRF4431
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Untitled
Abstract: No abstract text available
Text: TCM1030, TCM1050 DUAL TRANSIENT-VOLTAGE SUPPRESSORS S C TS 040B - J U N E 1989 - R EVISED JU NE 1997 • • Meet or Exceed Bell Standard LSSGR Requirements D OR P PACKAGE TOP VIEW Externally-Controlled Negative Firing Voltage . . . -9 0 V Max • Accurately Controlled, Wide Negative
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TCM1030,
TCM1050
TCM1030
TCM1030.
TCM1050
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74VHC4040
Abstract: No abstract text available
Text: S E M I C O N D U C T O R -n 74VHC4040 12-Stage Binary Counter General Description Features The VH C4040 is an advanced high-speed CM OS device fabricated w ith silicon g a le CM OS technology. It achieves the high-speed operation sim ilar to equivalent B ipolar Schottky T T L w hile m aintaining the CM OS low pow er dissipation.
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74VHC4040
12-Stage
C4040
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74LS82
Abstract: 74245 BIDIRECTIONAL BUFFER IC ic 4583 schmitt trigger core bit excess 3 adder using IC 7483 advantages for ic 7473 4 BIT COUNTER 74669 la 4508 ic schematic diagram XF107 74295 random number generator by using ic 4011 and 4017
Text: General Features The SCxD4 series of high performance CMOS gate arrays offers the user the ability to realise customised VLSI inte grated circuits featuring the speed performance previously obtainable only with bipolar technologies whilst retaining all the advantages of CMOS technology; low power consum p
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diode RP 4040
Abstract: APT4040B APT4030 j0501
Text: ADVANCED POW ER Te c h n o l o g y q O D r APT4030BN APT3530BN APT4040BN APT3540BN Ô S ¡5 WER MOS m 400V 350V 400V 350V 18.5A 18.5A 16.0A 16.0A 0.300 0.30Q 0.40Q 0.40Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T c = 25°C unless otherwise specified.
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APT4030BN
APT3530BN
APT4040BN
APT3540BN
3530BN
4030BN
3540BN
4040BN
APT4030/3530/4040/3540BN
APT4030/4040BN
diode RP 4040
APT4040B
APT4030
j0501
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