DIODE RN2 Search Results

12 pulse diode rectifier

Contextual Info: RN2Z SILICON RECTIFIER DIODE Forward Current – 2.0 Ampere Features • For pulse rectification applications Mechanical Data • Case: Resin molded Absolute Maximum Ratings and Characteristics Symbols Rating Units Transient Peak Reverse Voltage VRSM 200 V

RN262G

Contextual Info: RN262G Diodes PIN diode RN262G External dimensions Unit : mm Applications High frequency switching Land size figure (Unit : mm) Features 1) Ultra small mold type. (VMD2) 2) Low high-frequency forward resistance / low capacitance (CT). Structure Construction

RN242

Contextual Info: RN242CS PIN diode RN242CS zDimensions Unit : mm zLead size figure (Unit : mm) 0.55 0.45 0.5 0.45 zApplications High frequency switching zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and lowcapacitance VMN2 zStructure zConstruction

RN262CS

Contextual Info: PIN diode RN262CS zDimensions Unit : mm zApplications High frequency switching zLand size figure (Unit : mm) 0.45 0.5 0.45 0.55 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high-frequency forward resistance / low capacitance (C T ). VMN2 zStructure

Contextual Info: AEC-Q101 Qualified PIN diode RN242CSFH zApplications High frequency switching zLead size figure Unit : mm zDimensions (Unit : mm) 0.45 0.5 0.45 0.55 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and lowcapacitance VMN2 zStructure

Contextual Info: PIN diode RN242CS Applications High frequency switching Dimensions Unit : mm Lead size figure (Unit : mm) 0.45 0.5 0.45 0.55 Features 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and lowcapacitance VMN2 Structure Construction Silicon epitaxial planer

Contextual Info: RN262CS PIN diode RN262CS zDimensions Unit : mm zApplications High frequency switching zLand size figure (Unit : mm) 0.45 0.5 0.45 0.55 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high-frequency forward resistance / low capacitance (C T ). VMN2 zStructure

RN242CS

Abstract: 8312MV
Contextual Info: PIN diode RN242CS zDimensions Unit : mm zLead size figure (Unit : mm) 0.55 0.45 0.5 0.45 zApplications High frequency switching zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and lowcapacitance VMN2 zStructure zConstruction Silicon epitaxial planer

Contextual Info: AEC-Q101 Qualified PIN diode RN262CSFH zApplications High frequency switching zLand size figure Unit : mm zDimensions (Unit : mm) 0.45 0.5 0.45 0.55 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high-frequency forward resistance / low capacitance (C T ).

Contextual Info: PIN diode RN242CS zApplications High frequency switching zDimensions Unit : mm zLead size figure (Unit : mm) 0.45 0.5 0.45 0.55 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and lowcapacitance VMN2 zStructure zConstruction Silicon epitaxial planer

Contextual Info: SANKEN ELECTRIC CO., LTD. RN2Z 1. Scope The present specifications shall apply to an RN2Z. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 030711 1／5 61426-01 SANKEN ELECTRIC CO., LTD.

Contextual Info: PIN diode RN262CS zApplications High frequency switching zDimensions Unit : mm zLand size figure (Unit : mm) 0.45 0.5 0.45 0.55 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high-frequency forward resistance / low capacitance (C T ). zConstruction Silicon epitaxial planar

Contextual Info: PIN diode RN262CS Applications High frequency switching Dimensions Unit : mm Land size figure (Unit : mm) 0.45 0.5 0.45 0.55 Features 1) Ultra small mold type. (VMN2) 2) Low high-frequency forward resistance / low capacitance (C T ). Construction Silicon epitaxial planar

Contextual Info: RN262G Diodes PIN diode RN262G zApplications High frequency switching zExternal dimensions Unit : mm zLand size figure (Unit : mm) 0.5 0.13±0.03 0.5 0.6±0.05 1.0±0.05 1.4±0.05 1.2 zFeatures 1) Ultra small mold type. (VMD2) 2) Low high-frequency forward resistance / low

RN262G

Contextual Info: RN262G Diodes PIN diode RN262G zApplications High frequency switching zExternal dimensions Unit : mm zLand size figure (Unit : mm) 0.5 0.13±0.03 0.5 0.6±0.05 1.0±0.05 1.4±0.05 1.2 zFeatures 1) Ultra small mold type. (VMD2) 2) Low high-frequency forward resistance / low

RN242CS

Contextual Info: RN242CS Diodes PIN diode RN242CS zExternal dimensions Unit : mm zApplication High frequency switching zLead size figure (Unit : mm) 0.55 0.45 0.16±0.05 0.6±0.05 0.45 1.0±0.05 0.9±0.05 0.5 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and low

Contextual Info: RN242CS Diodes PIN diode RN242CS zExternal dimensions Unit : mm zApplication High frequency switching zLead size figure (Unit : mm) 0.55 0.45 0.16±0.05 0.6±0.05 0.45 1.0±0.05 0.9±0.05 0.5 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high frequency resistance and low

RN262G

Contextual Info: RN262G RN262G Diodes PIN diode RN262G zApplications High frequency switching zExternal dimensions Unit : mm zLand size figure (Unit : mm) 0.5 0.13±0.03 0.5 0.6±0.05 1.0±0.05 1.4±0.05 1.2 zFeatures 1) Ultra small mold type. (VMD2) 2) Low high-frequency forward resistance / low

Contextual Info: RN262CS Diodes PIN diode RN262CS zApplications High frequency switching zExternal dimensions Unit : mm zLand size figure (Unit : mm) 0.55 0.45 0.16±0.05 0.6±0.05 0.45 1.0±0.05 0.9±0.05 0.5 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high-frequency forward resistance / low

RN262CS

Contextual Info: RN262CS Diodes PIN diode RN262CS zApplications High frequency switching zExternal dimensions Unit : mm zLand size figure (Unit : mm) 0.55 0.45 0.16±0.05 0.6±0.05 0.45 1.0±0.05 0.9±0.05 0.5 zFeatures 1) Ultra small mold type. (VMN2) 2) Low high-frequency forward resistance / low

Contextual Info: RN262GFH Diodes PIN diode AEC-Q101 Qualified RN262GFH zExternal dimensions Unit : mm zApplications High frequency switching zLand size figure (Unit : mm) 0.5 0.13±0.03 0.5 0.6±0.05 1.0±0.05 1.4±0.05 1.2 zFeatures 1) Ultra small mold type. (VMD2) 2) Low high-frequency forward resistance / low

RN262G

Contextual Info: REFERENCE 29-Sep-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RN262G No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current XTI

RN262CS

Contextual Info: REFERENCE 29-Sep-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RN262CS No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

RN242CS

Contextual Info: REFERENCE 29-Sep-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RN242CS No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current