Untitled
Abstract: No abstract text available
Text: Surface Mount PIN Diode SP2T Switches MSW2060-206, MSW2061-206 & MSW2062-206 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 100 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power (500 W)
|
Original
|
PDF
|
MSW2060-206,
MSW2061-206
MSW2062-206
-180V
MSW2061-206,
|
153 tss
Abstract: R1243S001-E2-FE GRM32EB31C476KE GRM32EB31C476K r1243
Text: R1243x SERIES 30V Input 2A Buck DC/DC Converter NO.EA-206-100512 OUTLINE The R1243x Series is the CMOS-based Step-Down DC/DC Converter with internal Nch high side Tr. 0.175Ω , which can provide the maximum 2A output current. The IC consists of an Oscillator, a PWM control circuit, a
|
Original
|
PDF
|
R1243x
EA-206-100512
Room403,
Room109,
153 tss
R1243S001-E2-FE
GRM32EB31C476KE
GRM32EB31C476K
r1243
|
R1243S001-E2-FE
Abstract: No abstract text available
Text: R1243x SERIES 30V Input 2A Buck DC/DC Converter NO.EA-206-100928 OUTLINE The R1243x Series is the CMOS-based Step-Down DC/DC Converter with internal Nch high side Tr. 0.175Ω , which can provide the maximum 2A output current. The IC consists of an Oscillator, a PWM control circuit, a
|
Original
|
PDF
|
R1243x
EA-206-100928
Room403,
Room109,
R1243S001-E2-FE
|
Untitled
Abstract: No abstract text available
Text: R1 2 4 3 x SERI ES 30V Input 2A Buck DC/DC Converter NO.EA-206-111123 OUTLINE The R1243x Series is the CMOS-based Step-Down DC/DC Converter with internal Nch high side Tr. 0.175Ω , which can provide the maximum 2A output current. The IC consists of an Oscillator, a PWM control circuit, a
|
Original
|
PDF
|
EA-206-111123
R1243x
Room403,
Room109,
10F-1,
|
SDB3101F
Abstract: ksd2065
Text: SDB3101F Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. SDB3101F Marking Package Code DB1 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC KSD-2065-000
|
Original
|
PDF
|
SDB3101F
OT-23F
KSD-2065-000
SDB3101F
ksd2065
|
PD-2062
Abstract: 2062
Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-2062 1. Scope : This specification applies to NIP silicon photodiode chips, Device No. PD-2062 2. Structure : 2-1. Planar type : NIP diode. 2-2. Electrodes : Top side Cathode : Aluminum alloy. Back side ( Anode ) : Gold alloy.
|
Original
|
PDF
|
PD-2062
038mm)
153mm×
voltag25
100uA
905nm
PD-2062
2062
|
Untitled
Abstract: No abstract text available
Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-2065 1. Scope : This specification applies to NIP silicon photodiode chips, Device No. PD-2065 2. Structure : 2-1. Planar type : NIP diode. 2-2. Electrodes : Top side Cathode : Aluminum alloy . Back side ( Anode ) : Gold alloy.
|
Original
|
PDF
|
PD-2065
2870K
850nm
|
HSCH-5318
Abstract: rt duroid 5082-2207 diode
Text: Broadband Microstrip Mixer Design – The Butterfly Mixer Application Note 976 Introduction In Agilent Technologies Application Note 963, Impedance Matching Techniques for Mixers and Detectors, a technique for designing broadband matching circuits was developed and illustrated with
|
Original
|
PDF
|
HSCH-5318
rt duroid
5082-2207 diode
|
Untitled
Abstract: No abstract text available
Text: Bulletin PD-20695 rev. D 10/06 15ETL06 15ETL06S 15ETL06-1 15ETL06FP Ultra-low VF Hyperfast Rectifier for Discontinuous Mode PFC Features • • • • • • Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current 175°C Operating Junction Temperature
|
Original
|
PDF
|
PD-20695
15ETL06
15ETL06S
15ETL06-1
15ETL06FP
E78996
15Amp
08-Mar-07
|
71794
Abstract: 2SJ615
Text: Ordering number : ENN7179 2SJ615 P-Channel Silicon MOSFET 2SJ615 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2062A [2SJ615] 4.5 1.6 0.4 1.0 2.5
|
Original
|
PDF
|
ENN7179
2SJ615
2SJ615]
25max
71794
2SJ615
|
2SK3293
Abstract: No abstract text available
Text: Ordering number:ENN6345 N-Channel Silicon MOSFET 2SK3293 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3293] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3 1.5 2
|
Original
|
PDF
|
ENN6345
2SK3293
2SK3293]
25max
250mm2
2SK3293
|
ta2313
Abstract: TA 2313 2SK3292
Text: Ordering number:ENN6414 N-Channel Silicon MOSFET 2SK3292 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3292] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3 1.5 2
|
Original
|
PDF
|
ENN6414
2SK3292
2SK3292]
25max
250mm2
ta2313
TA 2313
2SK3292
|
2SJ563
Abstract: marking JO
Text: Ordering number:ENN6097A P-Channel Silicon MOSFET 2SJ563 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SJ563] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3 1.5 2
|
Original
|
PDF
|
ENN6097A
2SJ563
2SJ563]
25max
250mm2×
2SJ563
marking JO
|
MARKING KU
Abstract: 2SK3121
Text: Ordering number:ENN6104A N-Channel Silicon MOSFET 2SK3121 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3121] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
|
Original
|
PDF
|
ENN6104A
2SK3121
2SK3121]
25max
MARKING KU
2SK3121
|
|
|
j655
Abstract: J655 mosfet 2sj655 IT05384
Text: Ordering number : ENN0000 2SJ655 P-Channl Silicon MOSFET 2SJ655 DC / DC Converter Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2063A [2SJ655] 4.5 2.8 5.6 18.1 16.0 3.2 3.5
|
Original
|
PDF
|
ENN0000
2SJ655
2SJ655]
O-220ML
j655
J655 mosfet
2sj655
IT05384
|
DS-17 SANYO
Abstract: 2SK3122 marking KW
Text: Ordering number:ENN6105A N-Channel Silicon MOSFET 2SK3122 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3122] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5
|
Original
|
PDF
|
ENN6105A
2SK3122
2SK3122]
25max
DS-17 SANYO
2SK3122
marking KW
|
ta2313
Abstract: T M 2313 2SK3292 TA 2313 diode 0.2 V 1A
Text: Ordering number:ENN6414 N-Channel Silicon MOSFET 2SK3292 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3292] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3 1.5 2
|
Original
|
PDF
|
ENN6414
2SK3292
2SK3292]
25max
250mm2
ta2313
T M 2313
2SK3292
TA 2313
diode 0.2 V 1A
|
J652
Abstract: No abstract text available
Text: Ordering number : ENN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. unit : mm 2063A [2SJ652]
|
Original
|
PDF
|
ENN7625
2SJ652
2SJ652]
O-220ML
J652
|
2SK1311
Abstract: K30 mosfet MOSFET K30 DD13t
Text: 2SK1311 2062 LD Low Drive Series V Oss = 6 0 V N Channel Power MOSFET 3 I5 3 A F e a tu re s - Low ON resistance. • Very high-speed switching. - Low-voltage drive. b so lu te M axim um R atin g s at Ta=25°C Drain to Source Voltage Vdss Gate to Source Voltage
|
OCR Scan
|
PDF
|
2SK1311
3I53A
250mm2
S-ID-IS-30-2s
DD13TE1
2SK1311
K30 mosfet
MOSFET K30
DD13t
|
Untitled
Abstract: No abstract text available
Text: I l4flflb51D 0 0 0 0 2 ^ 0 û • ISO MSE D IS OC OM C O M P O N E N T S LTD IS 205X, IS 206X~ '•»t.ïSïS <¿5 ism oM OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT PACKAGE DIMENSIONS IN MM DESCRIPTION The IS205X, IS206X are optically coupled isolators
|
OCR Scan
|
PDF
|
4flflb51D
IS205X,
IS206X
IS206X
10mAf
VCE-10V
-100R,
|
a950
Abstract: A950 O
Text: SIEMENS SFH 205 SFH 205Q2 SFH 206 SILICON PIN PHOTODIODE DAYLIGHT FILTER Package Dimensions in Inches mm 1.336(34) 1.258(32) .100 (2S4) ,-Cathode .024 (.6) 016,(4) ~T~ .145(4.1) ?1»1 (3.7) .161 (4.1 .145 (3.J * =¥ .031 (.8) .016 (.4) *071 (1.8) .047 (1.2)
|
OCR Scan
|
PDF
|
205Q2
205/SFH
205Q2/SI-H
a950
A950 O
|
Untitled
Abstract: No abstract text available
Text: SFH 206K SIEMENS PIN PHOTODIODE Package Dimensions in Inches mm .100 (2.54) ±=c .024 (.6) .016 (.4) 1.336(34) 1.258(32) LL TÉ? 33^ .031 (.8) JT .016 (.4) .071 (1.8) .047(1.2) Cathode .157 (4) Surface not flat _271 (6.9) .248 (6.3) .020 (.5) .012 (.3)~|
|
OCR Scan
|
PDF
|
023b32b
SFH206K
flB3W32b
|
Untitled
Abstract: No abstract text available
Text: 0235bOS OOMbb1^ bOE D 324 « S I E Q SFH 205 SFH 205Q2 SFH 206 SIEMENS SIEMENS AKTIENGESELLSCHAF SILICON PHOTODIODE DAYLIGHT FILTER P a c k a g e D im e n sio n s in In ch e s m m 1 336 (34) Cathode 200 (5 1) 185 (4 7) 161 T * 41) r H (3 7) 145 100 t 336 (34)
|
OCR Scan
|
PDF
|
0235bOS
205Q2
523SbDS
D4b700
205/SFH
20SQ2/SI-H
|
HSMS High frequency detector diode
Abstract: hsch 3486 zero bias schottky diode HSCH-3486 HSMS-2850 HSMS-8101 diode 3L Microwave detector diodes McGraw-Hill
Text: Wfwl HEW LETT« müHÆP A C K A R D The Zero Bias Schottky Detector Diode Application Note 969 In tr o d u c tio n A conventional Schottky diode detector such as the Hewlett-Packard HSMS-8101 requires no bias for high level input power — above one milliwatt. However, a t low
|
OCR Scan
|
PDF
|
HSMS-8101
HSMS High frequency detector diode
hsch 3486 zero bias schottky diode
HSCH-3486
HSMS-2850
diode 3L
Microwave detector diodes
McGraw-Hill
|
