SCHOTTKY DIODE SOT-143
Abstract: 040P
Text: Silicon Schottky Diode Ring Quad Chips MA4E2062 Series MA4E2062 Series Preliminary Specifications Silicon Schottky Diode Ring Quards Features • • • • • • • Package Outlines Small Size Designed for High Volume, Low Cost Closely Matched Junctions
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MA4E2062
OT-143
SCHOTTKY DIODE SOT-143
040P
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DIODE RING QUAD
Abstract: No abstract text available
Text: 5082-2292 SILICON-MATCHED DIODE RING QUAD DESCRIPTION: The 5082-2292 is a Silicon Matched Ring Quad Mixer Diode Designed for Operations From 4.0 GHz to 8.0 GHz. PACKAGE STYLE C4 MAXIMUM RATINGS I 40 mA V 3.0 V PDISS 75 mW @ TC = 25 OC PER JUNCTION TJ -65 OC to +125 OC
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BY 178 DIODE
Abstract: HSCH-9301 handling of beam lead diodes F 9301 HP4271
Text: Agilent HSCH-9301 GaAs Beam Lead Schottky Ring Quad Diode Data Sheet Features • Gold tri-metal system for improved reliability • Low capacitance • Low series resistance • High cutoff frequency • Polyimide passivation Description The HSCH-9301 ring quad uses
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HSCH-9301
HSCH-9301
5965-8852E
5988-5515EN
BY 178 DIODE
handling of beam lead diodes
F 9301
HP4271
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Untitled
Abstract: No abstract text available
Text: F81QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>4.0V; 300mV Barrier
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F81QD-B40
300mV
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Untitled
Abstract: No abstract text available
Text: F84QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier
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F84QD-B40
625mV
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Untitled
Abstract: No abstract text available
Text: F82QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 400mV Barrier
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F82QD-B40
400mV
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Untitled
Abstract: No abstract text available
Text: F83QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 500mV Barrier
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F83QD-B40
500mV
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Untitled
Abstract: No abstract text available
Text: F82QA-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 400mV Barrier
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F82QA-W56
400mV
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Untitled
Abstract: No abstract text available
Text: F82QD-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 400mV Barrier
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F82QD-W56
400mV
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Untitled
Abstract: No abstract text available
Text: F84QC-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier
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F84QC-W56
625mV
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Untitled
Abstract: No abstract text available
Text: F83QA-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 500mV Barrier
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F83QA-W56
500mV
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F81QA-W56
Abstract: No abstract text available
Text: F81QA-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>4.0V; 300mV Barrier
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F81QA-W56
300mV
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Untitled
Abstract: No abstract text available
Text: F83QC-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 500mV Barrier
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F83QC-W56
500mV
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5516 DIODE
Abstract: 5516 schottky diode DME3927 DME3930 DMF3926 DMF3929 DMJ3928 DMJ3931 5512 IF 5514
Text: Silicon Beamless Schottky Diodes Features For Microwave MIC Assembly & Automated High Volume Manufacturing Lines Mechanically Rugged Design Three Barrier Heights for Optimized Mixer Performance Wide Product Range: Series Pair, Ring, Bridge, and 8 Diode Ring
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Untitled
Abstract: No abstract text available
Text: F81QC-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>4.0V; 300mV Barrier
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F81QC-W56
300mV
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Untitled
Abstract: No abstract text available
Text: F84QB-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier
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F84QB-W56
625mV
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SCHOTTKY DIODE SOT-143
Abstract: BAT 58
Text: Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped
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114-099R
Q62702-A1006
OT-143
SCHOTTKY DIODE SOT-143
BAT 58
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Untitled
Abstract: No abstract text available
Text: F83QB-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 500mV Barrier
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F83QB-W56
500mV
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Untitled
Abstract: No abstract text available
Text: F84QA-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier
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F84QA-W56
625mV
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Untitled
Abstract: No abstract text available
Text: F82QC-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 400mV Barrier
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F82QC-W56
400mV
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Untitled
Abstract: No abstract text available
Text: F84QD-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier
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F84QD-W56
625mV
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MA4CS104CR
Abstract: No abstract text available
Text: Ajfa High Volume, High Sigma C rossover Ring Quad * Surface M ount SOT-143 Silicon Schottky Diode Crossover Ring Quad MA4CS104CR Features • Low capacitance for high frequency performance • Low barrier junctions for sensitive double balanced mixers, IQ modulators and
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MA4CS104CR
OT-143
A4CS104CR
MA4CS104CR
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HSCH-5800
Abstract: No abstract text available
Text: Whpì HEWLETT mL'tiM PACKARD Beam Lead Schottky Diode Ring Quads for Double Balanced Mixers Operating to 26 GHz Technical Data HSCH-5800 Series Features • M onolithic Ring Quads Closely Matched Electrical Parameters • Low Capacitance 0.10 pF Max. at 0 V
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HSCH-5800
HSCH-583X
HSCH-581X
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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114-099R
Q62702-A1006
OT-143
EHA07C
E35bG5
D15G3Ã
DlED30*
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