DIODE RG 2M Search Results

Contextual Info: 1SS268 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 s S 2 68 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS FEATURES : • Small Package. • Small Total Capacitance : CFj,= i.2pF Max. • Low Series Resistance ; rg = 0,60 (Typ,) MAXIMUM RATINGS (Ta = 255C)

IRLHS2242

Abstract: IRLHS2242TR2PBF
Contextual Info: PD - 96360 IRLHS2242PbF HEXFET Power MOSFET VDS -20 V VGS max ±12 V RDS on max 31 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg typ ID (@Tc(Bottom) = 25°C) T OP VIEW 53 mΩ 9.6 nC -8.5 i D 1 D 6 D D G D D 2 D 5 D D G 3 S 4 S D S S 2mm x 2mm PQFN A Applications

Contextual Info: PD - 96360 IRLHS2242PbF HEXFET Power MOSFET VDS -20 V VGS max ±12 V RDS on max 31 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg typ ID (@Tc(Bottom) = 25°C) T OP VIEW D 1 D 6 D D G D 53 mΩ 9.6 nC D 2 D 5 D D -8.5 G 3 S 4 S D S S 2mm x 2mm PQFN i A

Contextual Info: IRLHS2242PbF HEXFET Power MOSFET VDS -20 V VGS max ±12 V RDS on max 31 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg typ ID (@Tc(Bottom) = 25°C) T OP VIEW 53 mΩ 9.6 nC -8.5 i D 1 D 6 D D D D 2 D 5 D D S G 3 G 4 S D S S 2mm x 2mm PQFN A Applications

Contextual Info: IRLHS2242PbF HEXFET Power MOSFET VDS -20 V VGS max ±12 V RDS on max 31 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg typ ID (@Tc(Bottom) = 25°C) T OP VIEW 53 mΩ 9.6 nC -8.5 i D 1 D 6 D D D D 2 D 5 D D S G 3 G 4 S D S S 2mm x 2mm PQFN A Applications

irlhs6342pbf#2

Contextual Info: IRLHS6342PbF HEXFET Power MOSFET VDS 30 V VGS ±12 V RDS on max 15.5 mΩ (@VGS = 4.5V) Qg (typical) ID 11 (@TC (Bottom) = 25°C) 12 nC i A TOP VIEW 6 D D 1 D 2 G 3 D S D D D 5 D 4 S D D G S S 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application

IRLHS6342TR2

Abstract: IRLHS6342TRPBF IRLHS6342 IRLHS6342TR2PBF AN-1154 PQFN footprint
Contextual Info: PD - 96339A IRLHS6342PbF VDS 30 V VGS ±12 V RDS on max 15.5 mΩ (@VGS = 4.5V) Qg (typical) ID 11 (@TC (Bottom) = 25°C) 12 nC i A HEXFET Power MOSFET TOP VIEW 6 D D 1 D 2 D S G 3 D D D 5 D 4 S D D G S S 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application

irlhs6242pbf

Contextual Info: PD - 97582A IRLHS6242PbF 20 V VGS ±12 V RDS on max 11.7 mΩ RDS(on) max D 6  A 6 (@TC (Bottom) = 25°C) d  * 8.5 G '  ID ' (@VGS = 2.5V) mΩ D D  ' 15.5 D '   ' (@VGS = 4.5V) HEXFET Power MOSFET X D@ ÃW Q P U VDS D S S 2mm x 2mm PQFN Applications

IRLHS6242

Abstract: IRLHS6242TR2PBF IRLHS6242TRPBF AN-1154 PQFN footprint d020d irlhs6242pbf
Contextual Info: PD - 97582B IRLHS6242PbF HEXFET Power MOSFET ±12 RDS on max 11.7 mΩ (@VGS = 4.5V) RDS(on) max D 6  A G '  (@TC (Bottom) = 25°C) d 6 12  * ID mΩ  ' (@VGS = 2.5V) D D ' 15.5 D '  VGS V V X D@ ÃW Q P U 20  ' VDS D S S 2mm x 2mm PQFN Applications

IRFHS9351

Abstract: st 9351
Contextual Info: PD - 97572A IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) TOP VIEW S 1 6 D S2 D d A G 2 D 3 G2 D2 5 G D D1 4 S D1 D2 S1 G1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

IRFHS9351

Contextual Info: PD - 97572B IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

Contextual Info: PD - 97572B IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) T OP VIEW S1 1 D1 6 D1 G2 S2 D1 ID -3.4 (@TC = 25°C) d G1 2 FET 1 D1 D2 5 G2 A D2 D2 3 G1 4 S2 S1 D2 FET 2 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

Contextual Info: PD - 97582B IRLHS6242PbF HEXFET Power MOSFET ±12 RDS on max 11.7 mΩ (@VGS = 4.5V) RDS(on) max G '  D A 6  (@TC (Bottom) = 25°C) d 6 12  * ID mΩ  ' (@VGS = 2.5V) D D ' 15.5 D '  VGS V V X D@ ÃW Q P U 20  ' VDS D S S 2mm x 2mm PQFN Applications

Contextual Info: IRLHS6242PbF HEXFET Power MOSFET VDS 20 VGS ±12 V V RDS on max 11.7 mΩ (@VGS = 4.5V) RDS(on) max 15.5 (@VGS = 2.5V) ID (@TC (Bottom) = 25°C) 12 d T OP VIEW D 1 mΩ D 2 A G 3 6 D D S D D D 5 D D 4 S D S S 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application

Contextual Info: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

Contextual Info: PD - 97596 IRFHS8342PbF HEXFET Power MOSFET VDS VGS max RDS on max (@VGS = 10V) Qg (typical) ID (@Tc(Bottom) = 25°C) 30 ±20 V V 16.0 mΩ D 1 8.7 nC D 2 A G 3 8.5 d T OP VIEW D 6 D D D D 5 D D S G 4 S D S S 2mm x 2mm PQFN Applications • Control MOSFET for Buck Converters

Contextual Info: PD - 97596A IRFHS8342PbF HEXFET Power MOSFET VDS 30 V VGS max ±20 V RDS on max 16.0 mΩ (@VGS = 10V) T OP VIEW D 1 (@VGS = 4.5V) ID (@Tc(Bottom) = 25°C) 4.2 8.5 D G 5 D nC D S G 3 d D D D 2 Qg(typical) D 6 D 4 S D S S 2mm x 2mm PQFN A Applications • Control MOSFET for Buck Converters

IRFHS9301

Abstract: irfhs9301tr2pbf
Contextual Info: PD - 97581A IRFHS9301PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V RDS on max (@VGS = -10V) Qg (typical) ID (@TC = 25°C) TOP VIEW D 1 37 mΩ 13 nC D 2 A G 3 -8.5 d D 6 D D D D 5 D D S G 4 S D S S 2mm x 2mm PQFN Applications l l Charge and Discharge Switch for Battery Application

Contextual Info: PD - 97581A IRFHS9301PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V RDS on max (@VGS = -10V) Qg (typical) ID (@TC = 25°C) 37 mΩ 13 nC -8.5 d A TOP VIEW D 1 D 6 D D G D D 2 D 5 D D S G 3 D 4 S S S 2mm x 2mm PQFN Applications l l Charge and Discharge Switch for Battery Application

IRFHS8342

Abstract: IRFHS8342PbF AN-1154
Contextual Info: PD - 97596A IRFHS8342PbF HEXFET Power MOSFET VDS 30 V VGS max ±20 V RDS on max 16.0 mΩ (@VGS = 10V) T OP VIEW D 1 (@VGS = 4.5V) ID (@Tc(Bottom) = 25°C) 4.2 8.5 D D S G 3 G 5 D nC d D D D 2 Qg(typical) D 6 D 4 S D S S 2mm x 2mm PQFN A Applications • Control MOSFET for Buck Converters

Contextual Info: IRFHS9301PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V RDS on max (@VGS = -10V) Qg (typical) ID (@TC = 25°C) TOP VIEW D 1 37 mΩ 13 nC D 2 A G 3 -8.5 d D 6 D D D D 5 D D S G 4 S D S S 2mm x 2mm PQFN Applications l l Charge and Discharge Switch for Battery Application

97570B

Abstract: IRLHS6276 irlhs6276pbf IRLHS6276TRPBF
Contextual Info: PD - 97570B IRLHS6276PbF HEXFET Power MOSFET 20 V VGS ±12 V RDS on max 45 mΩ  '  D1 D1  *  D2 6  A  ' d  ' 3.4 G1 S1 2mm x 2mm Dual PQFN 7 )( (@Tc(Bottom) = 25°C) mΩ   ' ID 62   * (@VGS = 2.5V) S2 G2 D2 7 )( RDS(on) max  6 (@VGS = 4.5V)

AN-1154

Abstract: IRLHS6276TR2PBF
Contextual Info: PD - 97570A IRLHS6276PbF HEXFET Power MOSFET 20 V VGS ±12 V RDS on max 45 mΩ D1 D1 *  D2 6  ' d A  ' (@Tc(Bottom) = 25°C) 3.4 mΩ '  ID 62 G2 D2  * (@VGS = 2.5V) S2 ' RDS(on) max  6 (@VGS = 4.5V) X D@ ÃW Q UP VDS G1 S1 2mm x 2mm Dual PQFN Applications

IRFHS8342

Abstract: irfhs8342pbf IRFHS8342TRPBF
Contextual Info: PD - 97596B IRFHS8342PbF HEXFET Power MOSFET VDS 30 V VGS max ±20 V RDS on max 16.0 mΩ (@VGS = 10V) T OP VIEW D 1 (@VGS = 4.5V) ID (@Tc(Bottom) = 25°C) 4.2 8.5 D D S G 3 G 5 D nC d D D D 2 Qg(typical) D 6 D 4 S D S S 2mm x 2mm PQFN A Applications • Control MOSFET for Buck Converters