BAY135
Abstract: BAY13
Text: BAY135 Vishay Telefunken Silicon Planar Diode Features D Very low reverse current Applications 94 9367 Protection circuits, delay circuits Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage, non repetitive Repetitive peak reverse voltage Reverse voltage
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BAY135
18-Mar-99
D-74025
BAY135
BAY13
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BAY135
Abstract: No abstract text available
Text: BAY135 Silicon Planar Diode Features D Very low reverse current Applications Protection circuits, delay circuits 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage, non repetitive Repetitive peak reverse voltage Reverse voltage Peak forward surge current
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BAY135
24-Jun-96
D-74025
BAY135
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quad schottky diode array
Abstract: BAS4002-RPP BFP181
Text: BAS4002A. Low VF Schottky Diode Array • Reverse voltage: 40 V • Forward current: 0.2 A • Small diode quad array for polarity independance, reverse polarity protection and low loss bridge rectification • Very low forward voltage: 0.55 @ 0.1 A per diode
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BAS4002A.
BAS4002A-RPP
BAS4002A-RPP*
OT143
quad schottky diode array
BAS4002-RPP
BFP181
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Untitled
Abstract: No abstract text available
Text: BAS4002A. Low VF Schottky Diode Array • Reverse voltage: 40 V • Forward current: 0.2 A • Small diode quad array for polarity independance, reverse polarity protection and low loss bridge rectification • Very low forward voltage: 0.55 @ 0.1 A per diode
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BAS4002A.
BAS4002A-RPP
OT143
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bas4002a
Abstract: quad schottky diode array BFP181
Text: BAS4002A. Low VF Schottky Diode Array • Reverse voltage: 40 V • Forward current: 0.2 A • Small diode quad array for polarity independance, reverse polarity protection and low loss bridge rectification • Very low forward voltage: 0.55 @ 0.1 A per diode
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BAS4002A.
BAS4002A-RPP
OT143
bas4002a
quad schottky diode array
BFP181
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Untitled
Abstract: No abstract text available
Text: BAS3007A. Low VF Schottky Diode Array • Reverse voltage: 30 V • Forward current: 0.9 A • Small diode quad array for polarity independence, reverse polarity protection and low loss bridge rectification • Very low forward voltage: 0.5 V typ. @ 0.7 A per diode
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BAS3007A.
BAS3007A-RPP
OT143
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SOT143 E1s
Abstract: ts-82 switch BAS3007A-RPP BFP181 c75135
Text: BAS3007A. Low VF Schottky Diode Array • Reverse voltage: 30 V • Forward current: 0.9 A • Small diode quad array for polarity independence, reverse polarity protection and low loss bridge rectification • Very low forward voltage: 0.5 V typ. @ 0.7 A per diode
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BAS3007A.
BAS3007A-RPP
OT143
SOT143 E1s
ts-82 switch
BAS3007A-RPP
BFP181
c75135
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SB1540TL
Abstract: No abstract text available
Text: SB1520TL.SB15100TL Type Axial Lead Diode Schottky barrier rectifier diodes Forward Current: 15 A Reverse Voltage: 20 to 100 V SB1520TL.SB15100TL Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage Max.
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SB1520TL.
SB15100TL
1520TL
1530TL
SB15100TL
1540TL
1545TL
1550TL
1560TL
SB1540TL
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Untitled
Abstract: No abstract text available
Text: DA221 Switching Diode SOT-523 Features Bias circuits Protection circuits MARKING: K Dimensions in inches and millimeters Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃ Symbol Limits Unit Peak reverse voltage VRM 20 V DC reverse voltage
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DA221
OT-523
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SB 1540 Diode
Abstract: f 1540 SB
Text: SB 1520 . SB 15100 Type Axial Lead Diode Schottky barrier rectifier diodes Forward Current: 15 A Reverse Voltage: 20 to 100 V SB 1520 . SB 15100 Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage
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Untitled
Abstract: No abstract text available
Text: SB 1520S . SB 15100S Type Axial Lead Diode Schottky barrier rectifier diodes Forward Current: 15 A Reverse Voltage: 20 to 100 V SB 1520S . SB 15100S Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage
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1520S
15100S
1520S
1530S
15100S
1540S
1545S
1550S
1560S
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DIODE S4 Schottky SOD-323
Abstract: DIODE marking S4 sod diode SOD-323 S4 DIODE schottky SD103CWS SD103AWS SD103BWS diode s6 28 diode x sod 323
Text: SOD-323 Plastic-Encapsulate Diode SD103AWS-SD103CWS SCHOTTKY DIODE SOD-323 Features • · 1.00 Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance 1.70 1.30 Marking: SD103AWS:S4
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OD-323
SD103AWS-SD103CWS
OD-323
SD103AWS
SD103BWS
SD103CWS
SD103AWS
SD103BWS
SD103CWS
DIODE S4 Schottky SOD-323
DIODE marking S4 sod
diode SOD-323
S4 DIODE schottky
diode s6 28
diode x sod 323
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD103AWS-SD103CWS SCHOTTKY DIODE SOD-323 Features • · 1.00 Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance
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OD-323
SD103AWS-SD103CWS
OD-323
SD103AWS
SD103BWS
SD103CWS
SD103AWS
SD103BWS
SD103CWS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode SD103AW-SD103CW SCHOTTKY DIODE SOD-123 Features 1.05 • · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance
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OD-123
SD103AW-SD103CW
OD-123
SD103AW
SD103BW
SD103CW
SD103AW
SD103BW
SD103CW
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD SD103AWS DIODE SCHOTTKY BARRIER SWITCHING DIODE FEATURES * Low Forward Voltage Drop * Fast Switching * Negligible Reverse Recovery Time * Low Reverse Capacitance * Designed for Surface Mount Application * PN Junction Guard Ring for Transient and ESD Protection
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SD103AWS
SD103AWSL-CB2-R
SD103AWSG-CB2-R
OD-323
QW-R601-082
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Untitled
Abstract: No abstract text available
Text: RECTRON SD103CW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 20 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA
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SD103CW
OD-123
MIL-STD-202E
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Untitled
Abstract: No abstract text available
Text: RECTRON SD103AW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 40 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA
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SD103AW
OD-123
MIL-STD-202E
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SD103CW
Abstract: No abstract text available
Text: RECTRON SD103CW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 20 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA
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SD103CW
OD-123
MIL-STD-202E
SD103CW
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SD103BW
Abstract: No abstract text available
Text: RECTRON SD103BW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 30 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA
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SD103BW
OD-123
MIL-STD-202E
SD103BW
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SD103AW
Abstract: No abstract text available
Text: RECTRON SD103AW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 40 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA
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SD103AW
OD-123
MIL-STD-202E
SD103AW
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Untitled
Abstract: No abstract text available
Text: RECTRON SD103BW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 30 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA
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SD103BW
OD-123
MIL-STD-202E
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Untitled
Abstract: No abstract text available
Text: XBS303V29R-G ETR16021-001 Schottky Barrier Diode FEATURES APPLICATIONS Forward Voltage : VF=0.39V TYP. Forward Current : IF(AVE)=3A Repetitive Peak Reverse Voltage : VRM=30V Rectification Protection against reverse connection of battery PACKAGING INFORMATION
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XBS303V29R-G
ETR16021-001
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Untitled
Abstract: No abstract text available
Text: XBS204V19R-G ETR16020-001 Schottky Barrier Diode FEATURES APPLICATIONS Forward Voltage : VF=0.46V TYP. Rectification Forward Current : IF(AVE)=2A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=40V PACKAGING INFORMATION
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XBS204V19R-G
ETR16020-001
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Untitled
Abstract: No abstract text available
Text: BAY135 V IS HAY Vishay Telefunken Silicon Planar Diode Features • Very low reverse current % Applications Protection circuits, delay circuits Absolute Maximum Ratings Tj = 25° C Parameter Peak reverse voltage, non repetitive Repetitive peak reverse voltage
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OCR Scan
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BAY135
18-Mar-99
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