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    DIODE REVERSE VOLTAGE PROTECTION Search Results

    DIODE REVERSE VOLTAGE PROTECTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    TCKE712BNL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 13.2 V, 3.65 A, Latch, Adjustable Over Voltage Protection, WSON10 Visit Toshiba Electronic Devices & Storage Corporation

    DIODE REVERSE VOLTAGE PROTECTION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAY135

    Abstract: BAY13
    Text: BAY135 Vishay Telefunken Silicon Planar Diode Features D Very low reverse current Applications 94 9367 Protection circuits, delay circuits Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage, non repetitive Repetitive peak reverse voltage Reverse voltage


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    PDF BAY135 18-Mar-99 D-74025 BAY135 BAY13

    BAY135

    Abstract: No abstract text available
    Text: BAY135 Silicon Planar Diode Features D Very low reverse current Applications Protection circuits, delay circuits 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage, non repetitive Repetitive peak reverse voltage Reverse voltage Peak forward surge current


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    PDF BAY135 24-Jun-96 D-74025 BAY135

    quad schottky diode array

    Abstract: BAS4002-RPP BFP181
    Text: BAS4002A. Low VF Schottky Diode Array • Reverse voltage: 40 V • Forward current: 0.2 A • Small diode quad array for polarity independance, reverse polarity protection and low loss bridge rectification • Very low forward voltage: 0.55 @ 0.1 A per diode


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    PDF BAS4002A. BAS4002A-RPP BAS4002A-RPP* OT143 quad schottky diode array BAS4002-RPP BFP181

    Untitled

    Abstract: No abstract text available
    Text: BAS4002A. Low VF Schottky Diode Array • Reverse voltage: 40 V • Forward current: 0.2 A • Small diode quad array for polarity independance, reverse polarity protection and low loss bridge rectification • Very low forward voltage: 0.55 @ 0.1 A per diode


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    PDF BAS4002A. BAS4002A-RPP OT143

    bas4002a

    Abstract: quad schottky diode array BFP181
    Text: BAS4002A. Low VF Schottky Diode Array • Reverse voltage: 40 V • Forward current: 0.2 A • Small diode quad array for polarity independance, reverse polarity protection and low loss bridge rectification • Very low forward voltage: 0.55 @ 0.1 A per diode


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    PDF BAS4002A. BAS4002A-RPP OT143 bas4002a quad schottky diode array BFP181

    Untitled

    Abstract: No abstract text available
    Text: BAS3007A. Low VF Schottky Diode Array • Reverse voltage: 30 V • Forward current: 0.9 A • Small diode quad array for polarity independence, reverse polarity protection and low loss bridge rectification • Very low forward voltage: 0.5 V typ. @ 0.7 A per diode


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    PDF BAS3007A. BAS3007A-RPP OT143

    SOT143 E1s

    Abstract: ts-82 switch BAS3007A-RPP BFP181 c75135
    Text: BAS3007A. Low VF Schottky Diode Array • Reverse voltage: 30 V • Forward current: 0.9 A • Small diode quad array for polarity independence, reverse polarity protection and low loss bridge rectification • Very low forward voltage: 0.5 V typ. @ 0.7 A per diode


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    PDF BAS3007A. BAS3007A-RPP OT143 SOT143 E1s ts-82 switch BAS3007A-RPP BFP181 c75135

    SB1540TL

    Abstract: No abstract text available
    Text: SB1520TL.SB15100TL Type Axial Lead Diode Schottky barrier rectifier diodes Forward Current: 15 A Reverse Voltage: 20 to 100 V SB1520TL.SB15100TL Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage Max.


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    PDF SB1520TL. SB15100TL 1520TL 1530TL SB15100TL 1540TL 1545TL 1550TL 1560TL SB1540TL

    Untitled

    Abstract: No abstract text available
    Text: DA221 Switching Diode SOT-523 Features — — Bias circuits Protection circuits MARKING: K Dimensions in inches and millimeters Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃ Symbol Limits Unit Peak reverse voltage VRM 20 V DC reverse voltage


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    PDF DA221 OT-523

    SB 1540 Diode

    Abstract: f 1540 SB
    Text: SB 1520 . SB 15100 Type Axial Lead Diode Schottky barrier rectifier diodes Forward Current: 15 A Reverse Voltage: 20 to 100 V SB 1520 . SB 15100 Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SB 1520S . SB 15100S Type Axial Lead Diode Schottky barrier rectifier diodes Forward Current: 15 A Reverse Voltage: 20 to 100 V SB 1520S . SB 15100S Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage


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    PDF 1520S 15100S 1520S 1530S 15100S 1540S 1545S 1550S 1560S

    DIODE S4 Schottky SOD-323

    Abstract: DIODE marking S4 sod diode SOD-323 S4 DIODE schottky SD103CWS SD103AWS SD103BWS diode s6 28 diode x sod 323
    Text: SOD-323 Plastic-Encapsulate Diode SD103AWS-SD103CWS SCHOTTKY DIODE SOD-323 Features • · 1.00 Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance 1.70 1.30 Marking: SD103AWS:S4


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    PDF OD-323 SD103AWS-SD103CWS OD-323 SD103AWS SD103BWS SD103CWS SD103AWS SD103BWS SD103CWS DIODE S4 Schottky SOD-323 DIODE marking S4 sod diode SOD-323 S4 DIODE schottky diode s6 28 diode x sod 323

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD103AWS-SD103CWS SCHOTTKY DIODE SOD-323 Features • · 1.00 Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance


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    PDF OD-323 SD103AWS-SD103CWS OD-323 SD103AWS SD103BWS SD103CWS SD103AWS SD103BWS SD103CWS

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode SD103AW-SD103CW SCHOTTKY DIODE SOD-123 Features 1.05 • · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance


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    PDF OD-123 SD103AW-SD103CW OD-123 SD103AW SD103BW SD103CW SD103AW SD103BW SD103CW

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD SD103AWS DIODE SCHOTTKY BARRIER SWITCHING DIODE „ FEATURES * Low Forward Voltage Drop * Fast Switching * Negligible Reverse Recovery Time * Low Reverse Capacitance * Designed for Surface Mount Application * PN Junction Guard Ring for Transient and ESD Protection


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    PDF SD103AWS SD103AWSL-CB2-R SD103AWSG-CB2-R OD-323 QW-R601-082

    Untitled

    Abstract: No abstract text available
    Text: RECTRON SD103CW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 20 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA


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    PDF SD103CW OD-123 MIL-STD-202E

    Untitled

    Abstract: No abstract text available
    Text: RECTRON SD103AW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 40 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA


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    PDF SD103AW OD-123 MIL-STD-202E

    SD103CW

    Abstract: No abstract text available
    Text: RECTRON SD103CW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 20 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA


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    PDF SD103CW OD-123 MIL-STD-202E SD103CW

    SD103BW

    Abstract: No abstract text available
    Text: RECTRON SD103BW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 30 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA


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    PDF SD103BW OD-123 MIL-STD-202E SD103BW

    SD103AW

    Abstract: No abstract text available
    Text: RECTRON SD103AW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 40 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA


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    PDF SD103AW OD-123 MIL-STD-202E SD103AW

    Untitled

    Abstract: No abstract text available
    Text: RECTRON SD103BW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 30 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA


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    PDF SD103BW OD-123 MIL-STD-202E

    Untitled

    Abstract: No abstract text available
    Text: XBS303V29R-G ETR16021-001 Schottky Barrier Diode FEATURES APPLICATIONS Forward Voltage : VF=0.39V TYP. Forward Current : IF(AVE)=3A Repetitive Peak Reverse Voltage : VRM=30V Rectification Protection against reverse connection of battery PACKAGING INFORMATION


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    PDF XBS303V29R-G ETR16021-001

    Untitled

    Abstract: No abstract text available
    Text: XBS204V19R-G ETR16020-001 Schottky Barrier Diode FEATURES APPLICATIONS Forward Voltage : VF=0.46V TYP. Rectification Forward Current : IF(AVE)=2A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=40V PACKAGING INFORMATION


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    PDF XBS204V19R-G ETR16020-001

    Untitled

    Abstract: No abstract text available
    Text: BAY135 V IS HAY Vishay Telefunken Silicon Planar Diode Features • Very low reverse current % Applications Protection circuits, delay circuits Absolute Maximum Ratings Tj = 25° C Parameter Peak reverse voltage, non repetitive Repetitive peak reverse voltage


    OCR Scan
    PDF BAY135 18-Mar-99