DIODE RECTIFIER 4001 Search Results

SM4001-SM4007

Abstract: J17G
Contextual Info: SM 4001.SM 4007 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /5 Surface mount diode Standard silicon rectifier diodes SM 4001.SM 4007  5  

Contextual Info: SUF 4001 . SUF 4007 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module /5 Surface mount diode Ultrafast silicon rectifier diodes SUF 4001 . SUF 4007  5   0

Contextual Info: 1N 4001.1N 4007, 1N 4007-1300 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter ,2 Axial lead diode Standard silicon rectifier diodes 1N 4001.1N 4007, 1N 4007-1300 8  9  3  9  9 +

Contextual Info: UF 4001.UF 4007, UF 4007-1200 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter -3 Axial lead diode Ultrafast silicon rectifier diodes UF 4001.UF 4007, UF 4007-1200 8  9  4  9  9 +

85713

Abstract: 85713 B SF4004 SF4007
Contextual Info: VISHAY SF400X_PSpice Vishay Semiconductors SF400X Spice Parameters SF 4001 .SF4004 SF 4005 .SF4007 * Technology: DISCRETE DEVICE * Device: Rectifier Diode SF4004 * Description: * Type: Typical nom * Subcircuit: 16.12.1996, by S.Reuter, TM1iC63-HN * Remarks:

DO-213AB 4007

Abstract: 4007 diode do-213AB melf diodes color DO213-AB color band 4003 diode rectifier DO-213AB diode rectifier 4001 DIODE 4005 SM4001-SM4007 IN 4004 diodes
Contextual Info: SM 4001.SM 4007 Type Polarity color band Repetitive peak reverse voltage Surge peak reverse voltage Maximum forward voltage Tj = 25 °C Maximum reverse recovery time IF = 1 A IF = - A IR = - A IRR = - A VRRM Surface mount diode Standard silicon rectifier

T161-160

Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
Contextual Info: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.

1N6757

Abstract: lm 4011 MIL-PRF19500 1N675
Contextual Info: INCH-POUND MIL-PRF-19500/641 1 April 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARSENIDE, POWER RECTIFIER, TYPE 1N6757, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.

1N6840

Abstract: 1N6840U3 1N6841 1N6841U3 MIL-PRF19500 smd code marking pk oh SMD diode MARKING CODE Z2 MARKING CODE LR1 DIODE
Contextual Info: INCH-POUND MIL-PRF-19500/678 1 July 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON,DUAL SCHOTTKY CENTER TAP POWER RECTIFIER, SURFACE MOUNTED, TYPES 1N6840U3 AND 1N6841U3, JAN, JANTX, JANTXV, JANS This specification is approved for use by all Departments

1n6831

Abstract: 1N6826US 1N6826 MIL-PRF19500 1N6831US
Contextual Info: INCH-POUND MIL-PRF-19500/670 19 June 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N6826, 1N6826US, 1N6831 and 1N6831US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments

1N6688

Abstract: 1N6689 MIL-STD-129 1N6689US
Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 25 September 1997 INCH POUND MIL-PRF-19500/627A 25 June 1997 SUPERSEDING MIL-S-19500/627 18 November 1994 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

lm 4011

Abstract: MIL-PRF19500 1N6753 1N675
Contextual Info: INCH-POUND MIL-PRF-19500/640 21 October 1996 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARSENIDE, POWER RECTIFIER, COMMON CATHODE TYPE 1N6753, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 January 2014. MIL-PRF-19500/645D 31 October 2013 SUPERSEDING MIL-PRF-19500/645C 24 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

1N6664 R

Contextual Info: * METRIC The documentation and process conversion measures necessary to comply shall with this document shall be completed by 3 March 2011. * MIL-PRF-19500/594B 3 December 2010 SUPERSEDING MIL-PRF-19500/594A 3 July 1998 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

1N6773R

Abstract: JAN1N6772 JAN1N6772R 1N6772 1N6772R 1N6773
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 November 2007. MIL-PRF-19500/645C 24 August 2007 SUPERSEDING MIL-PRF-19500/645B 24 October 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

schottky diode 100A inventory

Abstract: 1N6930UTK1 JS6930 1N6932UTK1 BT 342 project 1N693 ms 1051 1n6930
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2005. MIL-PRF-19500/725A 7 September 2005 SUPERSEDING MIL-PRF-19500/725 28 October 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 July 2007. MIL-PRF-19500/503E 11 April 2007 SUPERSEDING MIL-PRF-19500/503D 27 December 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 2013. MIL-PRF-19500/647E 21 June 2013 SUPERSEDING MIL-PRF-19500/647D 5 November 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

1N6910

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 January 2012. INCH-POUND MIL-PRF-19500/723C 12 October 2011 SUPERSEDING MIL-PRF-19500/723B 28 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,

DIODE 1N649

Abstract: diode 351 1N649 JANTX diode 1n645 1N649-1 JANTX 1N647-1 JANTX equivalent 1N647-1 1N647-1 JANTXV 1N649-1 1N649UR1 JAN
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/240R 13 August 2009 SUPERSEDING MIL-PRF-19500/240P 5 September 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER,

BT 342 project

Abstract: 1N692 1N6920UTK2 1n6920
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2005. MIL-PRF-19500/724A 7 September 2005 SUPERSEDING MIL-PRF-19500/724 28 October 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,

JANTX1N6779

Abstract: 1N6778 1N6779 JAN1N6778 JANTX1N6778 JANTXV1N6778 647c
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 February 2007. MIL-PRF-19500/647D 5 November 2007 SUPERSEDING MIL-PRF-19500/647C 4 August 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

1N6873

Abstract: 1N6875UTK2 1n6872 1N687 1N6872UTK2AS MIL PRF 19500 diode thermal profile 1n6875 1N6874UTK2 BT 342 project 1N6874UTK2CS
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2005. * MIL-PRF-19500/719A 7 September 2005 SUPERSEDING MIL-PRF-19500/719 28 October 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,

ir21015

Abstract: 1N688 1N6882UTK4 1n6885 1N6884UTK4CS BT 342 project 1n6882 MIL PRF 19500 diode thermal profile
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2005. MIL-PRF-19500/720A 7 September 2005 SUPERSEDING MIL-PRF-19500/720 28 October 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,