DIODE R4 Search Results

MDM1200H45E2-H

Abstract: mbn1200h45e2-h MBN1200H45
Contextual Info: DIODE MODULE Spec.No.SR2-SP-09005 R4 MDM1200H45E2-H P1 Preliminary Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.

R22A

Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener

transistor R1d

Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener

R451570

Abstract: microwave detector diode Microwave Diode "zero-bias schottky diode" DIODE RF DETECTOR 33KOHM of resistance 33kohm
Contextual Info: A. NATIONAL MICROWAVE DIODE For 2.45 GHz nd 915 MHz Partnr: R451570 MICROWAVE DETECTOR DIODE. R 451570 is a general-purpose zero-bias Schottky diode microwave coaxial detector, intended primarily for 915 MHz and 2450MHz industrial applications. The detector delivers well-scaled DC voltages as a function of microwave power.

zd1 1014

Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky

ltc4352iddpbf

Abstract: TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A 12-PIN LTC4352C LTC4352CDD LTC4352IDD
Contextual Info: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES DESCRIPTION n The LTC 4352 creates a near-ideal diode using an external N-channel MOSFET. It replaces a high power Schottky diode and the associated heat sink, saving power and board area. The ideal diode function permits low loss

217F

Abstract: resistor film transistor MTBF L2 diode 725
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General

ZPSA60-15

Abstract: FR 306 Diode 217F
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-15 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General

DIODE 4008

Abstract: "DIODE" 4008 217F capacitor Electrolytic zener3 optocupler 105 capacitor
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-12 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General

217F

Abstract: ZPSA60-12 capacitor variable ceramic zd1 1014 105 capacitor
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-12 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General

variable resistor 502

Abstract: OPTOCUPLER HAND BOOK 217F ZPSA40-24 zpsa40 capacitor Electrolytic
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-24 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode, Fast 1 D2 6.1 Diode,General 1 BR1 6.1 Diode,General

731 zener diode

Abstract: FR 309 diode 217F diode zener c5 R27A
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General

Contextual Info: DIODE MODULE Spec.No.SR2-SP-09003 R4 MDM750H65E2 FEATURES  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.  Isolated heat sink terminal to base .

Contextual Info: DIODE MODULE Spec.No.SR2-SP-09007 R4 MDM500H65E2 Preliminary Specification FEATURES  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.  Isolated heat sink terminal to base .

DW84C2V4NND03-DW84C39NND03

Abstract: Jiangsu Changjiang Electronics Technology
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Diode - WBFBP-03B DW84C2V4NND03-DW84C39NND03 1.2x1.2×0.5 ZENER DIODE DESCRIPTION Epitaxial planar type Silicon diode TOP + 1. ANODE - 2. NC, 3.CATHODE FEATURES: z Ultra-Small Surface Mount Package

MIL-W-85

Abstract: 4433 support R422C MIL-F-3922/54-003
Contextual Info: Agilent R422C mm-Wave Planar-Doped Barrier Detector Data Sheet 26.5 to 40.0 GHz Outstanding Performance The Planar-Doped Barrier PDB diode technology combines the best characteristics of point-contact and low barrier Schottky to provide exceptional performance. This PDB diode technology provides

Contextual Info: DUAL DIODE MODULE Spec.No.SR2-SP-08004 R4 MDM1200E17D OUTLINE DRAWING Unit in mm FEATURES ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . CIRCUIT DIAGRAM C(K) C(K)

78996

Abstract: ci 4538 12v to 220 v ac inverter IC 4538 IC td 4538 GB15RF120K application of IC 4538
Contextual Info: PD - 94571 GB15RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics

transistor c 2335

Abstract: C-150 IRFI840G IRGIB15B60KD1
Contextual Info: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD- 94914 IRGIB15B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRGIB10B60KD1P
Contextual Info: PD - 94913 IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRGIB15B60KD1P

Abstract: C-150
Contextual Info: PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

transistor BR 9013

Abstract: C-150 IRFI840G IRGIB15B60KD1 transistor c 2335
Contextual Info: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

diode 10a 400v

Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
Contextual Info: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.