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    DIODE R3 Search Results

    DIODE R3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE R3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    R22A

    Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
    Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener


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    110VAC ZPS60-3 R22A transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E PDF

    transistor R1d

    Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
    Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener


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    110VAC ZPS40-3 transistor R1d transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F PDF

    zd1 1014

    Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
    Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky


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    110VAC ZPD40-512 zd1 1014 217F C10A C12A capacitor ceramic optocupler transistor MTBF PDF

    ltc4352iddpbf

    Abstract: TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A 12-PIN LTC4352C LTC4352CDD LTC4352IDD
    Text: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES DESCRIPTION n The LTC 4352 creates a near-ideal diode using an external N-channel MOSFET. It replaces a high power Schottky diode and the associated heat sink, saving power and board area. The ideal diode function permits low loss


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    LTC4352 12-Pin 1TC4412HV 8V/36V, TSOT-23 LTC4413/LTC4413-1 DFN-10 LTC4414 LTC4416/LTC4416-1 ltc4352iddpbf TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A LTC4352C LTC4352CDD LTC4352IDD PDF

    217F

    Abstract: resistor film transistor MTBF L2 diode 725
    Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    ZPSA40-5 217F resistor film transistor MTBF L2 diode 725 PDF

    ZPSA60-15

    Abstract: FR 306 Diode 217F
    Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-15 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    ZPSA60-15 ZPSA60-15 FR 306 Diode 217F PDF

    DIODE 4008

    Abstract: "DIODE" 4008 217F capacitor Electrolytic zener3 optocupler 105 capacitor
    Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-12 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    ZPSA40-12 DIODE 4008 "DIODE" 4008 217F capacitor Electrolytic zener3 optocupler 105 capacitor PDF

    217F

    Abstract: ZPSA60-12 capacitor variable ceramic zd1 1014 105 capacitor
    Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-12 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    ZPSA60-12 217F ZPSA60-12 capacitor variable ceramic zd1 1014 105 capacitor PDF

    variable resistor 502

    Abstract: OPTOCUPLER HAND BOOK 217F ZPSA40-24 zpsa40 capacitor Electrolytic
    Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-24 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode, Fast 1 D2 6.1 Diode,General 1 BR1 6.1 Diode,General


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    ZPSA40-24 variable resistor 502 OPTOCUPLER HAND BOOK 217F ZPSA40-24 zpsa40 capacitor Electrolytic PDF

    731 zener diode

    Abstract: FR 309 diode 217F diode zener c5 R27A
    Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    ZPSA60-5 731 zener diode FR 309 diode 217F diode zener c5 R27A PDF

    Untitled

    Abstract: No abstract text available
    Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev A1, Page 1/42 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers


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    QFN28 QFN28-5x5 D-55294 PDF

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes y inar m i l pre iC-HT DUAL CW LASER DIODE DRIVER FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ APPLICATIONS ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers


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    QFN28 QFN28-5x5 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIODE MODULE Spec.No.SR2-SP-09003 R3 MDM750H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .


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    SR2-SP-09003 MDM750H65E2 PDF

    W66ESF002X13

    Abstract: generators winding circuit diagrams EHT COIL EHT COIL transformer W66ESF 335NF circuit diagram of pulse position modulator DSADA0016983 AN96099
    Text: APPLICATION NOTE Diode modulator for linear zoom. AN96099 Philips Semiconductors Diode modulator for linear zoom. Application Note AN96099 Abstract A short description is given on the existing diode modulator functioning and the changes which have to be made


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    AN96099 W66ESF002X13 generators winding circuit diagrams EHT COIL EHT COIL transformer W66ESF 335NF circuit diagram of pulse position modulator DSADA0016983 AN96099 PDF

    DW84C2V4NND03-DW84C39NND03

    Abstract: Jiangsu Changjiang Electronics Technology
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Diode - WBFBP-03B DW84C2V4NND03-DW84C39NND03 1.2x1.2×0.5 ZENER DIODE DESCRIPTION Epitaxial planar type Silicon diode TOP + 1. ANODE - 2. NC, 3.CATHODE FEATURES: z Ultra-Small Surface Mount Package


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    WBFBP-03B WBFBP-03B DW84C2V4NND03-DW84C39NND03 DW84C24NND03 DW84C27NND03 DW84C30NND03 DW84C33NND03 DW84C36NND03 DW84C39NND03 DW84C2V4NND03-DW84C39NND03 Jiangsu Changjiang Electronics Technology PDF

    ECONO2-6PACK IGBT module

    Abstract: IC 7425 datasheet IR E78996 IR E78996 105 IRF E78996 E78996 IR ic 4075 datasheet or gate GB35XF120K
    Text: PD - 94570 GB35XF120K IGBT 6PACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics


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    GB35XF120K ECONO2-6PACK IGBT module IC 7425 datasheet IR E78996 IR E78996 105 IRF E78996 E78996 IR ic 4075 datasheet or gate GB35XF120K PDF

    78996

    Abstract: ci 4538 12v to 220 v ac inverter IC 4538 IC td 4538 GB15RF120K application of IC 4538
    Text: PD - 94571 GB15RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics


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    GB15RF120K 78996 ci 4538 12v to 220 v ac inverter IC 4538 IC td 4538 GB15RF120K application of IC 4538 PDF

    GB25RF120K

    Abstract: No abstract text available
    Text: PD - 94552 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics


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    GB25RF120K indicated360V GB25RF120K PDF

    C-150

    Abstract: IRFI840G IRGIB6B60KD PD944
    Text: PD-94427C IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PD-94427C IRGIB6B60KD O-220 IRFI840G O-220 C-150 IRFI840G IRGIB6B60KD PD944 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PD-95321 IRGIB6B60KDPbF O-220 O-220 PDF

    C-150

    Abstract: IRGIB6B60KD
    Text: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PD-94427D IRGIB6B60KD O-220 O-220 C-150 IRGIB6B60KD PDF

    transistor c 2335

    Abstract: C-150 IRFI840G IRGIB15B60KD1
    Text: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    IRGIB15B60KD1 O-220 IRFI840G O-220 transistor c 2335 C-150 IRFI840G IRGIB15B60KD1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94385A IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    4385A IRGB5B120KD O-220 O-220AB IRF1010 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 94914 IRGIB15B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    IRGIB15B60KD1PbF O-220 O-220 PDF