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    DIODE PR30 Search Results

    DIODE PR30 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE PR30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PR308S31ESU

    Abstract: shin-etsu g747 LR63705 PR308S41ESU R9051479 application note triac protection 8A260VAC Dow Corning 747
    Text: PR308S41ESU ∗ IT rms ≤8A, Built-in snubber circuit Reinforced Insulation Type Zero Cross type SIP 4pin Triac output SSR • Description ■ Agency approvals/Compliance PR308S41ESU Solid State Relays (SSR) are an integration of an infrared emitting diode (IRED), a Phototriac Detector and a main output Triac. These devices


    Original     		PDF PR308S41ESU PR308S41ESU UL508, E94758 PR308S41) LR63705 EN60950 R9051479 PR308S31ESU shin-etsu g747 LR63705 R9051479 application note triac protection 8A260VAC Dow Corning 747

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    new bright R288-2

    Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
    Text: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz


    Original     		PDF 200/266/333MHZ Y1-27MHz Y2-14 318MHz ICS950405 M10/M11 K8T800 Y5-32 768MHz 266/533MB/s new bright R288-2 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT

    CH2507S

    Abstract: lm3931 FBJ3216HS800 MAX1999 QUANTA SSM14 imz2 lm3932 LM393-1 LM393 SOP8
    Text: 5 4 ADP IN 135W D 3 VA_ADP BEAD 2 1 VA_DOCK MOS FOR N.B. VA MAX: 150W N-MOS DIODE CONN. D ADP IN (150W) VA_ADP 3V(4A) & 5V(5A) CONN. SUSON ISOLATE RC DELY SYSTEM'S VA SUSON_PR MOS S0 C V +2.5V V 3VPCU V V +3VSUS V V +3V V 5VPCU V V +5VSUS V V +5V V BUS_PWR


    Original     		PDF MAX1999 127178MA060GX10ZR-60P-LUV RE110X181 RE110X181 H-C197D118P2 CH2507S lm3931 FBJ3216HS800 MAX1999 QUANTA SSM14 imz2 lm3932 LM393-1 LM393 SOP8

    PR3002 diode

    Abstract: lt pr3002 AN 15525 AN 15524 PR3003 15525 PR3001 PR3002 PR3004 PR3005
    Text: PR3001–PR3005 Vishay Lite–On Power Semiconductor 3.0A Fast Recovery Rectifier Features D Diffused junction D Fast switching for high efficiency D High current capability and low forward voltage drop D Surge overload rating to 150A peak D Low reverse leakage current


    Original     		PDF PR3001 PR3005 PR3001 PR3002 PR3003 PR3004 D-74025 24-Jun-98 PR3002 diode lt pr3002 AN 15525 AN 15524 PR3003 15525 PR3002 PR3004 PR3005

    3007G

    Abstract: PR3001G PR3002G PR3003G PR3004G PR3005G PR3006G PR3007G
    Text: PR3001G–PR3007G Vishay Lite–On Power Semiconductor 3.0A Fast Recovery Glass Passivated Rectifier Features D D D D Glass passivated die construction Diffused junction Fast switching for high efficiency High current capability and low forward voltage drop


    Original     		PDF PR3001G PR3007G PR3001G PR3002G PR3003G PR3004G PR3005G PR3006G D-74025 3007G PR3002G PR3003G PR3004G PR3005G PR3006G PR3007G

    8A260VAC

    Abstract: LR63705 PR308T11ESZ PR308T21ESZ shin-etsu g747
    Text: PR308T11ESZ IT rms ≤8A, Reinforced Insulation Type Non-Zero Cross type Low profile SIP 4pin Triac output SSR PR308T11ESZ ∗ Zero cross type is also available. (PR308T21ESZ) • Description ■ Agency approvals/Compliance PR308T11ESZ reinforced insulation type Solid


    Original     		PDF PR308T11ESZ PR308T21ESZ) PR308T11ESZ UL508, E94758 PR308T11) LR63705 EN60950 8A260VAC LR63705 PR308T21ESZ shin-etsu g747

    PR308S31ESU

    Abstract: power supply 240V rms, 50Hz LR63705 PR308S41ESU triac 600V 80A
    Text: PR308S31ESU ∗ IT rms ≤8A, Built-in snubber circuit Reinforced Insulation Type Non-Zero Cross type SIP 4pin Triac output SSR • Description ■ Agency approvals/Compliance PR308S31ESU reinforced insulation type Solid State Relays (SSR) are an integration of an infrared


    Original     		PDF PR308S31ESU PR308S31ESU UL508, E94758 PR308S31) LR63705 EN60950 R9051479 D4-A03601EN power supply 240V rms, 50Hz LR63705 PR308S41ESU triac 600V 80A

    BY228 equivalent

    Abstract: BYD14G RU20A cross reference
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vSE-db0112-1009 BY228 equivalent BYD14G RU20A cross reference

    diode cross reference

    Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
    Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS


    Original     		PDF

    melf diode marking

    Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
    Text: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish


    Original     		PDF 5KE100A-B 5KE100A-T 5KE100CA-B 5KE100CA-T 5KE10A-A 5KE10A-B 5KE10A-T 5KE10CA-B 5KE10CA-T 5KE110A-B melf diode marking A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT

    FW82439TX

    Abstract: 442-665 FM 4213 904251 C-569 cyber938 777HFR PC505 12v dc choke inverter circuit Rp1214
    Text: DATA CUT DATE:1998/08/04 * PC;5033TX/SS-001-M/XX-0A/1XB Spare Parts List * A PART_NO 526266553005 .1 416266553012 .3 411665500201 .4 242600000001 .4 242600000145 .4 242600000158 .4 242600000169 .4 242600000170 .4 242600000195 .4 242901300011


    Original     		PDF 5033TX/SS-001-M/XX-0A/1XB LP486 5026VO 200MM 3020F 5033T FW82439TX 442-665 FM 4213 904251 C-569 cyber938 777HFR PC505 12v dc choke inverter circuit Rp1214

    jp1e

    Abstract: HT12S11 D353G 777HFR th 558 cpu cap 100 39p 904251 FPC CON 24P PWA-5033HPM LCD inverter circuit mitac
    Text: 1998/9/29 * PC;5033TX/TH-001-M/JP-1E/1XB JP Spare Parts List * A PART_NO 526266553018 .1 416266553006 .2 431665530002 .3 411665500204 .4 242600000001 .4 242600000145 .4 242600000158 .4 242600000169 .4 242600000172 .4 242600000195


    Original     		PDF 5033TX/TH-001-M/JP-1E/1XB 5033T 3020F jp1e HT12S11 D353G 777HFR th 558 cpu cap 100 39p 904251 FPC CON 24P PWA-5033HPM LCD inverter circuit mitac

    4.7 B2 glass diodes

    Abstract: 1N400* series 1N4001 general diode purpose surface mount tic 41
    Text: CONTENTS ALPHA/NUMERIC LISTING OF PART N UM . 3 BRIDGE RECTIFIER AND DIODE . 4


    OCR Scan     		PDF

    PR3002 diode

    Abstract: mic bridge rectifier 1N5401 mic 1N5408 mic diode bridge 35 Ampere 1000V 1N5404 bridge rectifier diode PR3002 1N5408 Diode 1N5408 Diode 1N5403 PR3003
    Text: 6862229 DO PACCOM ELECTRONICS zr SILICON SINGLE PHASE 3 AMPERE RECTIFIER/FAST RECOVERY DIODE _ -P4CC0I1 ELECTRONICS I • w • High current capability • Low leakage • Low forward voltage drop Type D1 DIMENSIONS A L D1 D2 25 9.53 1.42 5.33 .98 .38 .056


    OCR Scan     		PDF 1-60Hz 1N5400 1N5401 1N5402 148th PR3002 diode mic bridge rectifier 1N5401 mic 1N5408 mic diode bridge 35 Ampere 1000V 1N5404 bridge rectifier diode PR3002 1N5408 Diode 1N5408 Diode 1N5403 PR3003

    RB070L-40

    Abstract: No abstract text available
    Text: ROHm 1. PRODUCT Schottky Barrier Diode Silicon Epitaxial Planar 2 . TYPE R B 0 7 0 L —4 0 3. General rectification APPLICATION 4. FEATURE -Snail power »old type (PUDS) •High reliability *Low VF 5 . ABSOLUTE MAXIMUM RATING (Ta=25*C) VRM Reverse voltage (repetitive peak)


    OCR Scan     		PDF -55--ISO 82X30X RB070L-40 RB070L-40

    PR3002 diode

    Abstract: No abstract text available
    Text: PR3001-PR3005 Vishay Lite-On Power Semiconductor 3.0A Fast Recovery Rectifier Features • Diffused junction • Fast sw itching fo r high efficiency • High current capability and low forw ard voltage drop • Surge overload rating to 150A peak • Low reverse leakage current


    OCR Scan     		PDF PR3001-PR3005 PR3001 PR3002 PR3003 PR3004 PR3005 D-74025 24-Jun-98 PR3002 diode

    Untitled

    Abstract: No abstract text available
    Text: PR3001G-PR3007G Vishay Lite-On Power Semiconductor ▼ 3.0A Fast Recovery Glass Passivated Rectifier Features • G la s s p a s s iv a te d die c o n s tru c tio n • D iffu se d ju n c tio n • F a st s w itc h in g fo r h igh e ffic ie n c y • H igh c u rre n t c a p a b ility and lo w fo rw a rd


    OCR Scan     		PDF PR3001G-PR3007G 3001G 3002G 300iBHAY D-74025 24-Jun-98