ALPs modulator
Abstract: BY438 diode BY438 JI75 TRANSISTOR D 819
Text: SbE ]> 7110ÖSL 0 040 45 1 SOfl • P H I N BY438 P H IL IP S INTERNATIONAL T-OI-is SbE D PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television receivers. The
|
OCR Scan
|
BY438
OD-64.
BY438.
7Z77828
ALPs modulator
BY438
diode BY438
JI75
TRANSISTOR D 819
|
PDF
|
aml 10 series
Abstract: Scans-001779
Text: DAF 40 DAF 4 0 Diode-R.F. pentode battery valve The D A F 40 is a diode-pentode for b a tte ry operation; th e p entode section is designed for R .F . an d I.F . am plification, th e diode section for d etectio n a n d A.G.C. A b a tte ry w ith a nom inal voltage of 1.4 V can be used for th e
|
OCR Scan
|
-DAF40
aml 10 series
Scans-001779
|
PDF
|
marking v6 07 diode
Abstract: No abstract text available
Text: BAP64-02 Silicon PIN diode Rev. 8 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD523 ultra small plastic SMD package. 1.2 Features and benefits High voltage, current controlled
|
Original
|
BAP64-02
OD523
sym006
marking v6 07 diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAP64-02 Silicon PIN diode Rev. 9 — 15 December 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD523 ultra small plastic SMD package. 1.2 Features and benefits High voltage, current controlled
|
Original
|
BAP64-02
OD523
|
PDF
|
sfh450
Abstract: No abstract text available
Text: SIEMENS Plastic Fiber O ptic T ransm itte r Diode Plastic C onnector Housing SFH 450 SFH 450V Features • • • • 2.2 mm aperture holds standard 1000 micron plastic fiber No fiber stripping required Good linearity Molded microlens for efficient coupling
|
OCR Scan
|
62702-P
Q62702-P265
OH000364
OHROQ535
Gpx06525
sfh450
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FEATURES PIN CONFIGURATION • • • • • DTL/TTL COMPATIBLE INPUTS 1103 AND 1103A RAM COMPATIBLE OUTPUTS HIGH OUTPUT SOURCE/SINK CURRENT CAPABILITY — 100mA HIGH SPEED — 45ns MAX. tD WITH 200 pFd LOAD INPUT AND OUTPUT DIODE CLAMPING TO MINIMIZE LINE RE
|
OCR Scan
|
100mA
|
PDF
|
SFH415 applications
Abstract: No abstract text available
Text: SFH 415 SFH 416 SIEMENS GaAs Infrared Emitter Dimensions in inches mm C t»p Position .217(5.5) .024(0.6) .016(0.4) .100(2.54) sp a ri a^ng T (1.ÔL, (12p .071(14 .047 T A. Cathode (Diode) ' Collector (Transistor) Approx. weight 0.4g CoHector SFH416 FEATURES
|
OCR Scan
|
SFH416
SFH415
416-R
-SFH415
SFH416
SFH415 applications
|
PDF
|
Z18-2
Abstract: No abstract text available
Text: SIEMENS LR Z181 LR Z182-189/180 SINGLE 2 to 10 DIODE ARRAYS Red Miniature LED Lamp Package Dimensions in Inches mm .094 (2.4) .083 (2.1 f 1 _.112 (2.84) .088 (2.24) r~ \ 086 (2 2) .079 (2.0) F .079 {2.0) .071 (1.8) .1 2 6 (3 .2 ) . 1 1 0 ( 2 .8 ) .378 (9.6) _
|
OCR Scan
|
Z182-189/180
Z181-CO
Z183-CO
Z184-CO
Z185-CO
Z186-CO
Z187-CO
Z188-CO
Z189-CO
Z18-2
|
PDF
|
RRMH
Abstract: RRME selenium rectifier RRM27 asea RRME RRMH ASEA RRM17 "selenium rectifier" 8 pin relay device 220 volt 4 uf 400 volt ac capacitor
Text: Catalogue RK 78-1 E E d itio n 2 F e b ru a ry 1973 F ils R. p a rt 2 Plug-in components Capacitor, resistor and diode devices V e rs io n s a n d m o u n tin g C o n te nts In th e A S E A pJog-in relay -system, d iffe re n t If a p o sitio n id e n tific a tio n p la te is re q u i
|
OCR Scan
|
RK78-1
RRMH
RRME
selenium rectifier
RRM27
asea RRME
RRMH ASEA
RRM17
"selenium rectifier"
8 pin relay device 220 volt
4 uf 400 volt ac capacitor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3030738 E G & G R E T IC O N 91D E G & G RETICON ~TL 02624 D! DE^J 3DB073Û j-41-55 QDG2bH4 R00720B RETICON Circular Array General Description SUBSTRATE IPOS 28 bC t[ 27 eno t[ The R00720B is a high-resolution circular solid-state scan ner designed specifically for applications such as focusing,
|
OCR Scan
|
3DB073Ã
j-41-55
R00720B
R00720B
R00720B/2
1987EG
|
PDF
|
SFH9101
Abstract: IC 9102 SFH9102
Text: SIEMENS SFH9101/9102 Light Reflection Switch in SMT Package Preliminary Data Dimensions in inches mm .165(4.2) .149 (3.8) .006(0.15) .005 (0.13) 0 -.004 (0 - . 1) .020 f0 .5 )_ J L .0 1 2(0 .3 )~ n r*.228 (5.8) -.050(1.2.7) spacing Anode 1 1 J 6 Cathode
|
OCR Scan
|
SFH9101/9102
SFH9101
SFH9102
18niA
SFH9101/9102
SFH9101
IC 9102
SFH9102
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SKM 600GB066D Absolute Maximum Ratings Symbol Conditions IGBT 123H $R * KL M2 C2 $R * J^L M2 $ ,5& * KLM2@ <'/&55 .- &%785& 59&(8=8&E APP 1 ^AP D $( * _P M2 L^P D _PP D aKP 1 $R * JLP M2 A U5 $( * KL M2 ^PP D $( * _P M2 LJP D _PP D LPP D $:R N OP Q J^L M2
|
Original
|
600GB066D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of FHP2N40E GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
|
OCR Scan
|
FHP2N40E
PHX1N40E
|
PDF
|
T082
Abstract: T092 ZSM300 aaor
Text: SUPPLY VOLTAGE ZSM300 MONITOR DEVICE DESCRIPTION FEATURES The ZSM300 is a three terminal under voltage monitor circuit for use in microprocessor systems. The threshold voltage of the device has been sat to 2.63 volts making it ideal for 3 volt circuits. ●
|
Original
|
ZSM300
ZSM300
OT223
T082
T092
aaor
|
PDF
|
|
|
LTC16251
Abstract: K/LTC16251 TOROIDS transformer 1625CG
Text: L in t A B _ LTC1625 TECHNOLOGY |\j0 Rsense Current M ode Synchronous Step-Down Switching Regulator FEATURES D€SCRIPTIOfl • ■ ■ ■ The LTC 1625 is a synchronous step-down switching regulator controller that drives external N-Channel power
|
OCR Scan
|
LTC1625
150kHz
LTC16251
K/LTC16251
TOROIDS transformer
1625CG
|
PDF
|
amplifier circuit diagram techno 5a
Abstract: TOROIDS transformer 16SA100M T OSCON 3V02
Text: L lfltA R _ u£i<a5 TECHNOLOGY No Rsen se Current M o d e Synchronous Step-D ow n Sw itching R eg u lato r FCflTURCS D € S C R IP T IO n • Highest Efficiency Current Mode Controller ■ No Sense Resistor Required ■ Stable High Current Operation
|
OCR Scan
|
30joA
16-Lead
1625f
amplifier circuit diagram techno 5a
TOROIDS transformer
16SA100M T OSCON
3V02
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Final E le c tric a l S p e c ific a tio n s r r u n TECHNOLOGY e A B _ LTC1625 No R s e n s e C urre nt M o d e Synchronous S tep-D ow n S w itching R egulator J u ly 1 9 9 8 F€RTUR€S DCSCRIPTIOn • Highest Efficiency Current Mode Controller
|
OCR Scan
|
LTC1625
LTC1436A-PLL
LTC1430
LTC1438
LTC1538-AUX
1625i
|
PDF
|
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
BUK452-60A/B
BUK452
T0220AB
ID/100
|
PDF
|
high efficiency current mode flyback converter
Abstract: 36Vto 4412DY 55206-A2 N CHANNEL MOSFET MIL GRADE 55380-A2 NEC NeoCap AVXTPSD107M010R0065 lt1339 application note pc 817 mosfet gate drive
Text: Final Electrical Specifications r r u v _ LTC1775 m TECHNO LO G Y High Pow er No R s e n s e C urrent M o d e Synchronous S tep-D ow n S w itching R egu lator FCnTURCS D iS C R IP T IO n • Highest Efficiency Current Mode Controller ■ No Sense Resistor Required
|
OCR Scan
|
300mV
30joA
16-Lead
LTC1649
LTC1702
500kHz;
LTC1735
16-Pin
high efficiency current mode flyback converter
36Vto
4412DY
55206-A2
N CHANNEL MOSFET MIL GRADE
55380-A2
NEC NeoCap
AVXTPSD107M010R0065
lt1339 application note
pc 817 mosfet gate drive
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS LD 261 LD 262—269/260 s in g l e d io d e arrays Infrared Emitters Dimensions in inches mm APPLICATIONS • Miniature photointerrupters • Punched tape-readers • Industrial electronics • For control and drive circuits DESCRIPTION The LD260-269 series, GaAs infrared emitting diodes,
|
OCR Scan
|
LD260-269
lE/lE100
OHR0I039
LD260-269
|
PDF
|
BA4422AN
Abstract: ba4422 sumida FM BPWB6A IC ba4422an FEM10C-2F6 sumida bpmb6a SFE10.7MA5 soshin bpf sumida ift coil
Text: # — t V # ffl IC /IC s for Audio Applications ROHM CO LTD 40 E D E l B A 4 4 2 2 A M BA4422AN T f l E S T n 00044=13 1 HRHM- FM /TV Front End 1£ W í \ f ' ¡ i /D im e n s io n s U nit : mm BA4422AN ( i , FM 7 O > h X > KfflO) ^ S 'J '> -y ? ICT'
|
OCR Scan
|
BA4422AN
BA4422AN
ba4422
sumida FM
BPWB6A
IC ba4422an
FEM10C-2F6 sumida
bpmb6a
SFE10.7MA5
soshin bpf
sumida ift coil
|
PDF
|
diode matrix rom 4 x 4
Abstract: S1460AF diode pjo PJO 199 diode matrix rom
Text: Seiko Instruments Inc. Semiconductor Division 199 1.6 .7 S-1460AF CMOS one-chip 4-bit microcomputer 1. PHYSICAL DESCRIPTION The S-1460AF, 4 -b it m icrocom puter integrates ROM, RAM , tim er and I/O ports on one chip. Since this m icrocom puter h a s 4 K x 16-bit ROM , dedicated
|
OCR Scan
|
S-1460AF
S-1460AF,
16-bit
diode matrix rom 4 x 4
S1460AF
diode pjo
PJO 199
diode matrix rom
|
PDF
|
Untitled
Abstract: No abstract text available
Text: r r u TECHNOLOGY n m _ LT1581/LT1581-2.5 1OA, Very Low Dropout Regulator KfìTUlKS DCSCRIPTIOn • Low Dropout, 430mV at 10A Output Current ■ Fast Transient Response ■ Remote Sense ■ 1 mV Load Regulation ■ Fixed 2.5V Output and Adjustable Output
|
OCR Scan
|
LT1581/LT1581-2
10OmV
430mV
LT1584.
LT1581.
100mA
|
PDF
|
