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    DIODE OPTOCOUPLERS Search Results

    DIODE OPTOCOUPLERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE OPTOCOUPLERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6N135

    Abstract: 6N136 E91231
    Text: 6N135, 6N136 HIGH SPEED OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 DESCRIPTION These diode-transistor optocouplers use a light emitting diode and an integrated photon detector to provide 2500Volts RMS electrical isolation between


    Original     		PDF 6N135, 6N136 E91231 2500Volts 6N136 DB91035-AAS/A1 6N135 E91231

    6N138

    Abstract: 6N139 E91231
    Text: 6N138, 6N139 HIGH SPEED OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT APPROVALS l UL recognised, File No. E91231 DESCRIPTION These diode-darlington optocouplers use a light emitting diode and an integrated high gain photon detector to provide 2500Volts RMS electrical isolation


    Original     		PDF 6N138, 6N139 E91231 2500Volts 300kBits/s 6N139 6N138 DB91037-AAS/A2 E91231

    6N138

    Abstract: 6N139 E91231
    Text: 6N138, 6N139 HIGH SPEED OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT APPROVALS l UL recognised, File No. E91231 DESCRIPTION These diode-darlington optocouplers use a light emitting diode and an integrated high gain photon detector to provide 2500Volts RMS electrical isolation


    Original     		PDF 6N138, 6N139 E91231 2500Volts 300kBits/s 6N139 6N138 DB91037-AAS/A3 E91231

    TTL transfer switch diode

    Abstract: 5V 50mA optically coupled isolator ICPL4502 E91231
    Text: ICPL4502 HIGH SPEED, NON BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 DESCRIPTION These diode-transistor optocouplers use a light emitting diode and an integrated photon detector to provide 2500Volts RMS electrical isolation between


    Original     		PDF ICPL4502 E91231 2500Volts 0000V/ DB91008-AAS/A2 TTL transfer switch diode 5V 50mA optically coupled isolator ICPL4502 E91231

    E91231

    Abstract: ICPL2531 ICPL2533
    Text: ICPL2533 HIGH SPEED DUAL CHANNEL OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 DESCRIPTION These dual channel diode-transistor optocouplers use a light emitting diode and an integrated photon detector to provide 2500Volts RMS electrical isolation


    Original     		PDF ICPL2533 E91231 2500Volts DB91038-AAS/A3 E91231 ICPL2531 ICPL2533

    ICPL2531

    Abstract: E91231 ICPL2530
    Text: ICPL2530, ICPL2531 HIGH SPEED DUAL CHANNEL OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 DESCRIPTION These dual channel diode-transistor optocouplers use a light emitting diode and an integrated photon detector to provide 2500Volts RMS electrical isolation


    Original     		PDF ICPL2530, ICPL2531 E91231 2500Volts DB92030-AAS/A3 ICPL2531 E91231 ICPL2530

    H11GX

    Abstract: H11G1 datasheet H11G2 H11G1 H11G3
    Text: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor


    Original     		PDF H11G1 H11G2 H11G3 H11GX E90700 00045A H11G1 datasheet H11G2 H11G1 H11G3

    Untitled

    Abstract: No abstract text available
    Text: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a


    Original     		PDF MOC8021M, MOC8050M MOC8021M MOC8050M MOC8021M) MOC8050M) E90700,

    H11GX

    Abstract: H11G1 H11G2 H11G3
    Text: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor


    Original     		PDF H11G1 H11G2 H11G3 H11GX E90700 H11G1 H11G2 H11G3

    MOC8050M

    Abstract: MOC8021M MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM optocoupler no base connection fairchild optocoupler
    Text: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a


    Original     		PDF MOC8021M, MOC8050M MOC8021M MOC8050M MOC8021M) MOC8050M) E90700, MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM optocoupler no base connection fairchild optocoupler

    MOC8050

    Abstract: MOC8050M MOC8021M MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM
    Text: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a


    Original     		PDF MOC8021M, MOC8050M MOC8021M MOC8050M MOC8021M) MOC8050M) E90700, MOC8050 MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM

    Untitled

    Abstract: No abstract text available
    Text: MOC215M, MOC216M, MOC217M Small Outline Surface Mount Phototransistor Optocouplers Features Description • U.L. recognized File #E90700, Volume 2 These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon


    Original     		PDF MOC215M, MOC216M, MOC217M E90700, MOC205VM) MOC217M

    marking codes fairchild 61

    Abstract: MOC211M MOC211VM MOC212M MOC213M
    Text: MOC211M, MOC212M, MOC213M Small Ouline Optocouplers Transistor Output Features Description • These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small


    Original     		PDF MOC211M, MOC212M, MOC213M E90700, MOC211VM) MOC213M marking codes fairchild 61 MOC211M MOC211VM MOC212M

    MOC207-M

    Abstract: MOC205M MOC205VM MOC206M MOC207M MOC208M Optocouplers 205
    Text: MOC205M, MOC206M, MOC207M, MOC208M Small Outline Optocouplers Transistor Output Features Description • U.L. recognized File #E90700, Volume 2 These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon


    Original     		PDF MOC205M, MOC206M, MOC207M, MOC208M E90700, MOC205VM) MOC208M MOC207-M MOC205M MOC205VM MOC206M MOC207M Optocouplers 205

    Untitled

    Abstract: No abstract text available
    Text: CNG35 CNG36 JV GaAIAs OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor w ith accessible base in a SOT90B envelope, designed for low input current and long life operation. The application o f an IR emitting diode, based on a special GaAIAs intrinsic process results in a


    OCR Scan     		PDF CNG35 CNG36 OT90B E90700 003S234 CNG36. CIMG36. 003SSTS

    HD H101

    Abstract: CNG36 CNG35 SOT-90B SOT90B
    Text: CNG35 CNG36 T O GaAIAs OPTOCOUPLERS O ptica lly coupled isolators consisting o f an infrared em itting GaAIAs diode and a silicon npn photo­ transistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life operation. The application o f an IR em ittin g diode, based on a special GaAIAs intrinsic process results in a


    OCR Scan     		PDF CNG35 CNG36 OT90B E90700 CNG36. 7Z24Q93 CNG35. HD H101 CNG36 CNG35 SOT-90B SOT90B

    Untitled

    Abstract: No abstract text available
    Text: TIL197, TIL198, TIL199, TIL197A, TILI98A, TILI199A TIL197B, TIL198B, TIL199B SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS 8003023 03437. MAY 199C * Gallium-Arsenide Diode Infrared Source


    OCR Scan     		PDF TIL197, TIL198, TIL199, TIL197A, TILI98A, TILI199A TIL197B, TIL198B, TIL199B E65085

    Untitled

    Abstract: No abstract text available
    Text: TIL917, TIL917A, TIL917B, TIL917C, TIL918, TIL918A TIL918B, TIL918C, TIL919, TIL919A, TIL919B, TIL919C SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS SOOS030 - FEBRUARY 1992 • Gallium-Arsenide Diode Infrared Source


    OCR Scan     		PDF TIL917, TIL917A, TIL917B, TIL917C, TIL918, TIL918A TIL918B, TIL918C, TIL919, TIL919A,

    Untitled

    Abstract: No abstract text available
    Text: I PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MCT2200 MCT2201 MCT2202 PACKAGE DIMENSIONS DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an NPN


    OCR Scan     		PDF MCT2200 MCT2201 MCT2202 MCT2200, MCT2201 MCT2202 E90700 C2079 C1683 C1296A

    ST2122

    Abstract: H11AG1 H11AG2 H11AG3 GE-MOV 2N4256 C2079 gemov SC160B
    Text: PHOTOTRANSiSTOR OPTOCOUPLERS DPTDELECTBflKICS ._ H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS •The H11AG series consists of a galiium-aluminumarsenide infrared emitting diode coupled with a silicon photoiransistor in a dual in-tine package. This device


    OCR Scan     		PDF H11AG1 H11AG2 H11AG3 H11AG ST1603 C2079 3VSVocS10V ol2125 ST2122 GE-MOV 2N4256 gemov SC160B

    C1679

    Abstract: C1680 C2079 MCT2200 MCT2201 MCT2202 C1682 transistor NPN C1685 C1685 transistor transistor c1684 NPN
    Text: tsO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELEETBöHStS MCT2200 MCT2201 MCT2202 PACKAGE DIMENSIONS DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an NPN


    OCR Scan     		PDF MCT2200 MCT2201 MCT2202 l2-54! C2079 STI603A MCT2200, E90700 C1679 C1680 C1682 transistor NPN C1685 C1685 transistor transistor c1684 NPN

    C1775

    Abstract: h11dx C2079 C1770 C1771 H11D1 H11D2 H11D3 C1773 RBE1
    Text: [su HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11D1 H11D2 H11D3 PACKAGE DIMENSIONS DESCRIPTION The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled


    OCR Scan     		PDF H11D1 H11D2 H11D3 H11DX H11D1-D2, H11D3, H11D1, H11D2, H11D3â E90700 C1775 C2079 C1770 C1771 H11D3 C1773 RBE1

    RT2700

    Abstract: ST20E
    Text: [ 5 Q MICROPROCESSOR COMPATIBLE CaAs SCHMITT TRIGGER OPTOCOUPLERS DPrCELECTISIIItS H11L1 H11L2H11L3 The H11L series has a mediunvtO'high speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. The output incorporates a


    OCR Scan     		PDF H11L1 H11L2H11L3 ST16D 3T2069 T2070 ST2015 S72017 ST201B RT2700 ST20E

    C1243

    Abstract: C2090
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS MCT276 PACKAGE IENSIONS The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode Is selectively coupled with a high speed NPN silicon phototransistor. r~ 6.86


    OCR Scan     		PDF MCT276 MCT276 E5015CAL C1686 C1679 C1680 C1243 C1243 C2090