HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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IN5158
Abstract: IN5159 1N5779 IN5779 1N578 IN5781 IN5160 IN5792
Text: i/’ _.’ / i‘ ~“” / ,.a,+ zx’ _P’ r i, I \. :. : :ii‘ : i~<Il 1, :i\ :h $! :. ,\,:,it’,‘. ‘?C 1’ jj I‘rr:\r,“,n? I>‘:. ri’.t, *: ,;: : ii’, i r. * _ -: 8~?1‘< \ * .- ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
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IN5783,
IN5789
IN5784,
IN5790
IN5779,
IN5785,
IN5791
IN5780,
IN5786,
IN5792
IN5158
IN5159
1N5779
IN5779
1N578
IN5781
IN5160
IN5792
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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Clock Generator intel atom n450
Abstract: Clock Generator intel atom n470 Intel atom Dual N455 ATOM intel N570 SODIMM DDR3 Mechanical Dimensions BGA559 l atom n450 pin configuration STPC Clock Generator intel atom n455 nm10 n450
Text: Intel Atom Processor N400 & N500 Series Datasheet - Volume 1 This is volume 1 of 2. Refer to Document Ref# 322848 for Volume 2. June 2011 Revision 003 Document Number: 322847-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,
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N5766
Abstract: N5752A N5772A N5741A N5766A Agilent N5767a N5745A n5741 Lambda EMI N5742
Text: Agilent Technologies System DC Power Supply Series N5700 User’s Guide A Legal Notices Agilent Technologies, Inc. 2004 - 2006 No part of this document may be photocopied, reproduced, or translated to another language without the prior agreement and written consent of Agilent
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N5700
OCP/488
N5766
N5752A
N5772A
N5741A
N5766A
Agilent N5767a
N5745A
n5741
Lambda EMI
N5742
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Thomson Electron Tubes
Abstract: C6878 C4742 M5679 streak camera hamamatsu c5680 M5677 ISO calibration certificate formats ccd detector project C1808-03 C1083
Text: Universal Streak Camera C5680 Series Measurements Ranging From X-Ray to Near Infrared With a Temporal Resolution of 2 ps The streak camera is an ultra high-speed detector which captures light emission phenomena occurring in extremely short time periods. Not only can the streak camera
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C5680
SE-171-41
1046E07
AUG/2003
Thomson Electron Tubes
C6878
C4742
M5679
streak camera hamamatsu c5680
M5677
ISO calibration certificate formats
ccd detector project
C1808-03
C1083
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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.120-80 uns
Abstract: 280/buss 2A
Text: Johanson Phasa-Trim# Adjustable Microwave Diode Holders 3 l©T^p description Johanson Microwave Diode Holders are an efficient and inexpensive means of securing and tuning microwave diodes into precise attitudes for optimum circuit performance. The self
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H6951
FAX-201-334-2954
.120-80 uns
280/buss 2A
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zener diode 1N PH 48
Abstract: zener diode 1N PH 53 1N3020-1 Diodo zener W diodo zener C 18 ph 1N1743 diode ziner 1N4202 ST 41 Diodo Zener 1N32B
Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART C ontaining all JEDEC re gistere d Zener diodes. This popular re fere nce cha rt contains high lig h t inform ation on all JEDEC registered Ze ner diode and re c tifie r types as w ell as M icrosem i types. The follow in g Codes are used:
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BZX83
BZX97
BZX98
BZY97
BZD10
BZW22
BZV40
500mW
DO-35
zener diode 1N PH 48
zener diode 1N PH 53
1N3020-1
Diodo zener W
diodo zener C 18 ph
1N1743
diode ziner
1N4202
ST 41 Diodo Zener
1N32B
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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DSAIH0002554
Abstract: No abstract text available
Text: B K C IN T E R N A T IO N A L 03E D | 117^03 GQODEQ7 Type No. 1 N571 7 T '0 3 - 0 7 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES Low forward voltage drop— low power consumption
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MIL-S-19500,
DSAIH0002554
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Untitled
Abstract: No abstract text available
Text: 1 N 5 7 2 8 thru Microsemi Corp. 1 N f The diode expens 5 7 5 7 S C O r rS D A L E , A l F of m ore inform ation call: 602 94I-630Ö FEATURES • ZENER VOLTAGE 4.7 TO 75 V SILICON 400 mW ZENER DIODES • SMALL RUGGEO DOUBLE SLUG CONSTRUCTION DO-35 • CONSTRUCTED WITH AN OXIDE PASSIVATED ALL OIFFUSED DIE
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94I-630Ã
DO-35
5729B
375-inches
N5757
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C68001
Abstract: 1N5712 1N5712 JANTX CI 4011 N5712 JANTXV1N5712 1N5712 JANTXV C-68001
Text: SCHOTTKY SWITCHING DIODE MILITARY APPROVED M IL-S -19500/445 H E W L E T T ^ PA CK ARD COMPONENTS JAN 1N5712 JANTX mm m m 15712 Features LOW TURN-ON VOLTAGE Description /Applications Maximum Ratings at T he J A N S e rie s 1 N 5 7 1 2 is an e p ita x ia l, p la n a r p a s s iv a te d
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1N5712
MIL-S-19500/445
N5712
MlL-S-19500/445)
1071E
2036E
1071G
1071E
33mAdc,
C68001
1N5712
1N5712 JANTX
CI 4011
JANTXV1N5712
1N5712 JANTXV
C-68001
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impatt diode
Abstract: impatt DIODE n57 varian
Text: >•} V 439805 '7 5 À 0 2 8 0 I VAR I AN ELECTRON Ufc V LL t 0 7 - ./ Series GALLIUM AR SE NI DE P U L S E D IMP ATT DIODES 8-15 GHz 15W, peak FEATURES OU TLI NE DRAWING C A S E N57 • High peak output - 15 W at 9 GHz • 14 W at 11 GHz 10 W at 1 4 GHz
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A979
Abstract: 9789A A7628 UDN5741M UDN5742M UDN5743M UDN5744M GP-009
Text: ALLEGRO MICROSYSTEMS INC 33E D D5D433Ô G0GS21S SERIES - T - s z - n ALGR • ■ DUAL PERIPHERAL/POWER DBIVERS TRANSIENT-PROTECTED OUTPUTS — Peripheral and pow er drivers com bining dual logic gates, highcurrent saturated output transistors, and transient-suppression diodes
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Q5D433Ã
G0GS21S
UDN5742M
-9790B
-7900B
A979
9789A
A7628
UDN5741M
UDN5742M
UDN5743M
UDN5744M
GP-009
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UDN5707A
Abstract: Power Drivers UDN-5703A UDN-5707A UDN-5733A UDN5700A
Text: SERIES UDN-5700A QUAD PERIPHERAL/POWER DRIVERS SERIES UDN-5700A QUAD 2-INPUT PERIPHERAL/POWER DRIVERS —Transient-Protected Outputs FEATURES: • Fo u r Log ic Types • D T L/ T T iy P M O S / C M O S C o m p a tib le Inpu ts • Low In p u t C u rre n t
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UDN-5700A
UDN-5700A
16-lead
UDN5707A
Power Drivers
UDN-5703A
UDN-5707A
UDN-5733A
UDN5700A
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Untitled
Abstract: No abstract text available
Text: 5 7 0 3 wo 5706 QUAD 2-INPUT PERIPHERAL/POWER DRIVERS -TRANSIENT-PROTECTED OUTPUTS These 16-lead quad 2-input peripheral/power drivers are bipolar monolithic integrated circuits containing AND or OR logic gates, highcurrent switching transistors, and transient-suppression diodes
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UDN5703A
16-lead
UDN5700A
-7628C
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gunn diodes
Abstract: VSA-9210 gunn diode varian x-band gunn diode n34 zener diagram of gunn diode Gunn diode x band gunn diode gunn diode x band radar yig oscillator 002
Text: FEATURES • LOW FM AND AM NOISE • LOW VOLTAGE OPERATION • OPERATION TO 60 GHz • HIGH RELIA BILITY DESCRIPTION V a ria n G unn-effect diodes a re g a lliu m -arsen id e d ev ices fo r con verting low -voltage d -c pow er d ire c tly to m icrow ave frequency pow er. They
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N55B
Abstract: 1N38A DIODE 1N38a 1n34a germanium diode 1N38B DIODE 1N34A 1N55B diode germanium 1N34A 1N34A germanium 1N51
Text: 3DE D K C I NTERNATI ONAL BKC International Electronics Inc. • 117^^03 00GD3S4 D ■ " p O l- C T ? 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 « TeleFax (617) 681-9135 • Telex 928377 TYPE 1N34A Low forward voltage drop —low power consumption
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00GD3S4
1N34A
150mA
MIL-S-19500,
N55B
1N38A
DIODE 1N38a
1n34a germanium diode
1N38B
DIODE 1N34A
1N55B
diode germanium 1N34A
1N34A germanium
1N51
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marking 2U diode t5
Abstract: diode hp 2800 hp 2800 diode diode hp 2835 schottky schottky diode marking A7 marking 2U diode C3 SOT23 HSMS2820 B7 SOT23 HSMS-2820
Text: rh p % H E W L E T T ftX fl PA CK A RD Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features Package Lead Code Identification • Surface Mount SOT-23/SOT143 Package • Low Turn-On Voltage A s Low as 0.34 V at 1 mA • Low FIT (Failure in Time)
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HSMS-28XX
OT-23/SOT143
OT-23)
OT-23
OT-143
OT-143)
marking 2U diode t5
diode hp 2800
hp 2800 diode
diode hp 2835 schottky
schottky diode marking A7
marking 2U diode
C3 SOT23
HSMS2820
B7 SOT23
HSMS-2820
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UDN5752M
Abstract: A7900 UDN5732M A1174 GP-009 GP009
Text: AL L E GRO MI C R OS Y S T E MS I NC 33E D • 050433Ô 0 Q0 S 2 1 Ô S ■ ALGR DUAL PERIPHERAL AND POWER DRIVER — TRANSIENT-PROTECTED OUTPUTS Com bining dual AND logic gates, high-current switching transistors, and transient suppression diodes in a bipolar m onolithic integrated
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UDN5752M
-9790B
-7900B
UDN5752M
A7900
UDN5732M
A1174
GP-009
GP009
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UDN5722
Abstract: A7900 UDN-5722M A7626 UDN5722M
Text: SPRAGUE/SENICOND GR OU P TE 8514 01 9 SPRAGUE^ S E M I C O N D S / ICS D • Ô S 1 3 0 S O □ □ □ 2 b clcï □ 92D 02699 ■ 7^ SERIES U D N -5 72 0 M , U D N -5 74 0 M , U D N-5750 M DUAL PERIPHERAL/POWER DRIVERS D 5 3 -0 SERIES UDN-5720M, UDN-5740M, UDN-5750M
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S130SO
N-5750
UDN-5720M,
UDN-5740M,
UDN-5750M
-7900B
UDN5722
A7900
UDN-5722M
A7626
UDN5722M
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLI» SbE » • 5544200 0000502 b04 ■ LITT GALLIUM ARSENIDE PULSED IMPATT DIODES 9251 Series • • • • • • 5-21 GHz High Peak Output Power High Efficiency— Typically 18-20% Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF
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554M5D0
000G503
N57/N58
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IN5717
Abstract: IN5718 IN5714 7C3 diode IN5421
Text: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces M V830-M V840 DO-7 G lass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X
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100pf
CV830-CV840
MV830-MV84G
CV1006-16-CV1106-16
FV1006-16,
FV1106-16
CV1620-CV1650
MV1620-MV1650
CV1652-CV1666
MV1652-MV1666
IN5717
IN5718
IN5714
7C3 diode
IN5421
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