DIODE MARKING V8 Search Results

Contextual Info: SDV708D Variable Capacitance Diode Variable Capacitance Diode Features and Benefits  Suitable for UHF band VCO  Low series resistance : rs=0.7 Typ. SOD-323 Ordering Information Part Number Marking Code Package Packaging SDV708D V8□ SOD-323 Tape & Reel

smd code marking v8 sot23

Abstract: philips marking 06
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PMBD354 Schottky barrier double diode Product specification 2002 Aug 06 Philips Semiconductors Product specification Schottky barrier double diode FEATURES PMBD354 MARKING • Low forward voltage • Small SMD package

Contextual Info: SDV708D Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708D V8 SOD-323 unit : mm 1.25±0.1 0.3~0.35 Outline Dimensions 2.5±0.1 1.7±0.1 1 2

C10V

Abstract: SDV708D DIODE marking V8
Contextual Info: SDV708D Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708D V8 SOD-323 unit : 1.25±0.1 0.3~0.35 Outline Dimensions mm 2.5±0.1 1.7±0.1 1 2

C10V

Abstract: SDV708Q
Contextual Info: SDV708Q Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708Q V8 SOD-523 Outline Dimensions unit : mm 0.70~0.90 0.32 Max. 1.50~1.70 1.10~1.30 1

Contextual Info: SDV708Q Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708Q V8 SOD-523 unit : mm 1.6±0.1 1.2±0.1 0.8±0.1 0.2 Min. Outline Dimensions 0~0.1

C10V

Abstract: SDV708Q
Contextual Info: SDV708Q Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708Q V8 SOD-523 unit : mm 1.6±0.1 1.2±0.1 0.8±0.1 0.2 Min. Outline Dimensions 0~0.1

C10V

Abstract: SDV708D
Contextual Info: SDV708D 얗 Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708D V8 SOD-323 unit : mm 1.25±0.1 0.3~0.35 Outline Dimensions 2.5±0.1 1.7±0.1

Contextual Info: V8PM12-M3, V8PM12HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available

Contextual Info: V8P45-M3, V8P45HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available

Contextual Info: V8P8-M3, V8P8HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available

Contextual Info: V8P8-M3, V8P8HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available

Contextual Info: V8P45-M3, V8P45HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available

Contextual Info: V8P6-M3, V8P6HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.37 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available

zener zp 278

Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
Contextual Info: MCC TM Micro Commercial Components ZENER DIODES 500mW ZENER DIODE / DODO-35 MCC PART NUMBER NOMINAL ZENER VOLTAGE VZ @ IZT VOLTS TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE ‘B’ SUFFIX ONLY ZZT @ IZT Ω 1N5221B 2.4 20 30 1N5222B 2.5 20 30 1N5223B 2.7 20

Contextual Info: Diodes SMD Type General Purpose PIN Diode BAP1321-03 SOD-323 Unit: mm • Features +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 ● High voltage, current controlled ● RF resistor for RF attenuators and switches ● Low diode capacitance +0.1

Contextual Info: Product specification BAP1321-03 SOD-323 Unit: mm • Features +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 ● High voltage, current controlled ● RF resistor for RF attenuators and switches ● Low diode capacitance +0.1 2.6-0.1 1.0max ● Low diode forward resistance

BAP1321-03

Abstract: SC-76 DIODE S4 92
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAP1321-03 Silicon PIN diode Product specification Supersedes data of 2001 May 11 2004 Feb 17 Philips Semiconductors Product specification Silicon PIN diode BAP1321-03 FEATURES PINNING • High voltage, current controlled

BAV70-A4

Abstract: Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 BAV70
Contextual Info: FERRANTI 4 semiconductors BAV70 H ig h S peed S w itc h in g D io d e Pair C o m m o n C a th o d e DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and thick film

Contextual Info: DISCRETE SEMICONDUCTORS DAT BAP1321-03 Silicon PIN diode Product specification Supersedes data of 2001 May 11 2004 Feb 17 NXP Semiconductors Product specification Silicon PIN diode BAP1321-03 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION

DIODE marking S4 06

Abstract: SMD MARKING CODE s4 BAP1321-03 SC-76
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAP1321-03 Silicon PIN diode Product specification Supersedes data of 2001 May 11 2004 Feb 17 NXP Semiconductors Product specification Silicon PIN diode BAP1321-03 FEATURES PINNING • High voltage, current controlled PIN

A2 DIODE SMD CODE MARKING

Abstract: smd code marking sot23 DIODE package sot23 smd marking A1 marking CODE R SMD DIODE smd diode marking code a2 SMD MARKING CODE M 4 Diode PMBD354
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PMBD354 Schottky barrier double diode Product specification Supersedes data of 2002 Aug 06 2003 Mar 25 Philips Semiconductors Product specification Schottky barrier double diode FEATURES PMBD354 PINNING

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 PMBD354 Schottky barrier double diode Product data sheet Supersedes data of 2002 Aug 06 2003 Mar 25 NXP Semiconductors Product data sheet Schottky barrier double diode PMBD354 PINNING FEATURES • Low forward voltage

smd code marking v8 sot23

Abstract: smd code marking WV DIODE package sot23 smd marking A1 PMBD354 NXP SMD diode MARKING CODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD354 Schottky barrier double diode Product data sheet Supersedes data of 2002 Aug 06 2003 Mar 25 NXP Semiconductors Product data sheet Schottky barrier double diode FEATURES PMBD354 PINNING • Low forward voltage