Untitled
Abstract: No abstract text available
Text: DLA10IM800UC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 10 A VF = 1.16 V Single Diode Part number DLA10IM800UC Marking on Product: MARLUI Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-252 DPak ● Planar passivated chips
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DLA10IM800UC
O-252
60747and
20130121b
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zener diode 4.7V
Abstract: marking h2 SOD-323 ZENER Zener Diode SOD-323 marking code 2b marking 2h SOD-323 ZENER A25 ZENER DIODE E1 sod323 diode marking code 2E zener diode 4.7V current rating diode F4 8a marking code 8A
Text: Surface Mount Zener Diode MMSZ52XXBS Series A suffix of "-C" specifies halogen-free 200mW, SOD-323 Electrical Characteristics @ T A=25 C unless otherwise specified Zener Voltage Range Note 1 Type Number Marking Code Nom V 2.4 2.5 2.7 3.0 3.3 3.6 3.9 4.3
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MMSZ52XXBS
200mW,
OD-323
150OC
01-Jun-2002
zener diode 4.7V
marking h2 SOD-323 ZENER
Zener Diode SOD-323 marking code 2b
marking 2h SOD-323
ZENER A25
ZENER DIODE E1
sod323 diode marking code 2E
zener diode 4.7V current rating
diode F4 8a
marking code 8A
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zener diode E2
Abstract: ZENER DIODE E1 zener diode J3 DIODE H5 c2 marking C5 87 marking code MM zener MMSZ5240 MMSZ5257B RoHS MMSZ5221B MMSZ5222B
Text: Surface Mount Zener Diode MMSZ52XXB Series A suffix of "-C" specifies halogen & lead-free 500mW,5% SOD-123 Electrical Characteristics @ T A=25 C unless otherwise specified Type Number Marking Code Zener Voltage Range Note 1 Nom V 2.4 2.5 2.7 3.0 3.3 3.6
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MMSZ52XXB
500mW
OD-123
01-Jun-2002
zener diode E2
ZENER DIODE E1
zener diode J3
DIODE H5 c2
marking C5 87
marking code MM zener
MMSZ5240
MMSZ5257B RoHS
MMSZ5221B
MMSZ5222B
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M1MA142WKT1
Abstract: dual reverse diode
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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M1MA141WKT1
M1MA142WKT1
SC-70
70/SOT
M1MA141/2WKT1
inch/3000
M1MA141/2WKT3
inch/10
M1MA142WKT2
M1MA142WKT1
dual reverse diode
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode M1MA141KT1 M1MA142KT1 This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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M1MA141KT1
M1MA142KT1
M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
70/SOT
M1MA142KT2
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dual switching diode
Abstract: diode MARKING CODE MN diode code marking MN MN DIODE
Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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M1MA141WAT1
M1MA142WAT1
SC-70/SOT-323
M1MA141/2WAT1
inch/3000
M1MA141/2WAT3
inch/10
M1MA142WAT2
dual switching diode
diode MARKING CODE MN
diode code marking MN
MN DIODE
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort M1MA141KT1 M1MA142KT1 Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
M1MA141KT1
M1MA142KT1
M1MA142KT1
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort M1MA141WAT1 M1MA142WAT1 Common Anode Silicon Dual Switching Diode ON Semiconductor Preferred Devices This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low
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M1MA141/2WAT1
inch/3000
M1MA141/2WAT3
inch/10
M1MA141WAT1
M1MA142WAT1
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DIODE 436
Abstract: 141WK
Text: ON Semiconductort M1MA141WKT1 M1MA142WKT1 Common Cathode Silicon Dual Switching Diode ON Semiconductor Preferred Devices This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low
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M1MA141/2WKT1
inch/3000
M1MA141/2WKT3
inch/10
M1MA141WKT1
M1MA142WKT1
DIODE 436
141WK
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E72873
Abstract: No abstract text available
Text: VUO 120-xxNO2T Three Phase Rectiier Bridge with NTC VRRM = 1200/1600 V 188 A IDAVM = IFSM = 1100 A Preliminary data Part name Marking on product VUO120-12NO2T VUO120-16NO2T M1/O1 W5 ~ K6 ~ E6 ~ A6 W6 E72873 M10/ O10 Pin coniguration see outlines. Features:
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120-xxNO2T
VUO120-12NO2T
VUO120-16NO2T
E72873
120-12NO2T
120-16NO2T
E72873
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E72873
Abstract: 120-16NO2T VUO120-16NO2T ntc application vuo120-16no2
Text: VUO 120-xxNO2T Three Phase Rectifier Bridge with NTC VRRM = 1200/1600 V 188 A IDAVM = IFSM = 1100 A Preliminary data Part name Marking on product VUO120-12NO2T VUO120-16NO2T M1/O1 W5 ~ K6 ~ E6 ~ A6 W6 E72873 M10/ O10 Pin configuration see outlines. Features:
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120-xxNO2T
1200/1600V
VUO120-12NO2T
VUO120-16NO2T
E72873
120-12NO2T
120-16NO2T
E72873
VUO120-16NO2T
ntc application
vuo120-16no2
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bzd27c
Abstract: diode z62
Text: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA / M1F FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener capability Low differential resistance
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BZD27C
DO-219AA
2002/95/EC
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
JESD22-B102.
diode z62
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BZD27C
Abstract: Z15 marking diode diode Z47 diode z36 cathode bzd27
Text: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA / M1F FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener capability Low differential resistance
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BZD27C
DO-219AA
2002/95/EC
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
JESD22-B102.
Z15 marking diode
diode Z47
diode z36
cathode bzd27
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Untitled
Abstract: No abstract text available
Text: Rectiier Diode Surface Mounting Device Single Diode OUTLINE M1FE40 400V 2A • • • Unit : mm Weight : 0.027g typ. Package M1F 2.8 カソードマーク Cathode mark ① SMD E88 1.8 ＋① ②− ② ロット記号（例） Date code 品名略号 Type No.
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M1FE40
J534-1
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Untitled
Abstract: No abstract text available
Text: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener capability Low differential resistance
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BZD27C
DO-219AA
AEC-Q101
2011/65/EU
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
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Untitled
Abstract: No abstract text available
Text: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener capability Low differential resistance
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BZD27C
DO-219AA
AEC-Q101
2011/65/EU
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
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smd diode marking 1A
Abstract: diode smd marking 1A m1f60 smd marking 1A M1F80
Text: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE M1F□ Unit : mm Weight : 0.027g （typ.） Package：M1F 800V 1A 特長 • 小型 SMD • 耐湿性に優れ高信頼性 Feature • Small SMD • High-Reliability
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J534-1
M1F60
M1F80
smd diode marking 1A
diode smd marking 1A
m1f60
smd marking 1A
M1F80
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motorola diode marking code
Abstract: Device marking code 1M diode M1MA142W 141WK diode marking code MU 142WK
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M 1M A141W KT1 M1MA142W KT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the S C -7 0 package
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M1MA141/2WKT1
inch/3000
M1MA141/2W
inch/10
A141W
M1MA142W
SC-70/SOT-323
M1MA141WKT1
M1MA142WKT1
141WK
motorola diode marking code
Device marking code 1M diode
diode marking code MU
142WK
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Device marking code 1m diode
Abstract: Diode marking CODE 1M Marking Code "1m" diode diode 1M MARKING CODE motorola diode marking code 141WK diode MARKING CODE jx cq 545 SQT-323 MU diode MARKING CODE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Sw itching Diode M1MA141WKT1 M1MA142WKT1 Motorola Preferred D *v lc * This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the
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OCR Scan
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PDF
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SC-70
M1MA141/2WKT1
inch/3000
M1MA141/2WKT3
inch/10
M1MA141WKT1
M1MA142WKT1
/SOT-323
M1MA142WKT1
Device marking code 1m diode
Diode marking CODE 1M
Marking Code "1m" diode
diode 1M MARKING CODE
motorola diode marking code
141WK
diode MARKING CODE jx
cq 545
SQT-323
MU diode MARKING CODE
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motorola diode marking code
Abstract: VA MARKING SC-70 PACKAGE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 Motorola Preferred Device# This C ommon Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70
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OCR Scan
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PDF
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SC-70
M1MA141/2WAT1
inch/3000
A141/2W
inch/10
M1MA141WAT1
M1MA142WAT1
SC-70/SOT-323
M1MA142WAT1
motorola diode marking code
VA MARKING SC-70 PACKAGE
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DIODE MARKING EA
Abstract: 41KT
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon S w itching Diode M1MA141KT1 M1MA142KT1 This Silicon Epitaxial Planar Diode is designed for use in ultra high speed sw itching applications. This device is housed in the SC-70 package which is designed for low pow er surface m ount applications.
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SC-70
M1MA141KT1
M1MA142KT1
141/2K
inch/3000
A141/2KT3
inch/10
SC-70/SOT-323
DIODE MARKING EA
41KT
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Untitled
Abstract: No abstract text available
Text: Single Diode M1FH3 Schottky Barrier Diode mtmm o u t l in e 30V 1.5A io V - P v - ? C ath o d e m ark CD Feature I Small SMD Super-Low V f= 0 .3 6 V •g e < g V F = 0 .3 6 V Unit-mm Weight 0.027g Typ Package : M1F H92 1 , T y p e No. Main Use • D C /D C
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J532
Abstract: WTT device marking marking BTJ
Text: Schottky Barrier Diode mtmm Single Diode M1FJ4 40V1.5A o u t l in e io V - P v - ? Cathode mark CD Feature l • /J v g y S M D - Small SMD > Tj=150°C 1Tj=150°C 1Low lR=0.05mA 1Resistance for thermal run-away • < S lR = 0 .0 5 m A :u ic < n Unit-mm Weight 0.027g Typ
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OCR Scan
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150lC
50IIz
J532
WTT device marking
marking BTJ
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode M1FH3 30V 1.5A Feature • Small SMD • Super-Low Vf=0.36V • * * S f i V F = 0 .3 6 V Main Use • Reverse connect protection for DC power source • DC/DC Converter • Mobile phone, PC • K y ÿ !L -iîÊ fê B 5 ±
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5011ziEÂ
li501
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