marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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Untitled
Abstract: No abstract text available
Text: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number 1 2 3 Marking on Product: SFMAUI Backside: cathode Applications: Features / Advantages:
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O-252
60747and
20110721a
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IXYS DSA 12
Abstract: No abstract text available
Text: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages:
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O-252
60747and
20110721a
IXYS DSA 12
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6P060AS
Abstract: No abstract text available
Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DSEP6-06AS
6P060AS
6-06AS
60747and
20110915a
6P060AS
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DIODE MARKING CODE B3
Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number DSEP6-06BS 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Applications:
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DSEP6-06BS
Recti10
60747and
20110915a
DIODE MARKING CODE B3
DIODE MARKING B4
marking B4 diode
l4 marking code diode
DSEP6-06BS
diode B4 252
diode marking b2
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Untitled
Abstract: No abstract text available
Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DSEP6-06BS
60747and
20110915a
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Fuji Electric SM
Abstract: YG811S04
Text: 1. SCOPE This sp e c ific a tio n provides the ra tin g s and the te st requirement fo r FUJI SILICON DIODE YG811S04R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot N ol
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OCR Scan
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YG811S04R
MA-41
Fuji Electric SM
YG811S04
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6P060AS
Abstract: No abstract text available
Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DSEP6-06AS
6P060AS
6-06AS
60747and
20110915a
6P060AS
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PDF
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DPG10I300PA
Abstract: No abstract text available
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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60747and
20090323a
DPG10I300PA
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03866
Abstract: 07062
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:
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60747and
20090323a
03866
07062
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PDF
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A-100
Abstract: SC321-2 sc321
Text: SC321 1.0A BaH gatg'ffr-K : Outline Drawings FAST RECOVERY DIODE I I * * : Features 185 : Marking Surface mount device High voltage by mesa design High reliability : Applications High speed switching. M axim um Ratings and Characteristics : Absolute Maximum Ratings
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sc321
SC32K1
A-100
SC321-2
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Untitled
Abstract: No abstract text available
Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number DLA 10 IM 800 UC 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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O-252
60747and
20070320a
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c81-004
Abstract: c81 004 Diode C81 004 C81004 ERC81 ERC81-004 T151 T460 T810 T930
Text: ERC81 -004 2 •6A M f l H ü : Outline Drawings sj~— K SCHOTTKY BARRIER DIODE : Features •te v F IR tf : Marking Low VF * 7 - 3 - K :#l Color code : Silver Super high speed switching. High reliability by planer design Abridged type name Voltage class
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OCR Scan
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ERC81-004
e18-ts
95t/R89
Shl50
c81-004
c81 004
Diode C81 004
C81004
ERC81
T151
T460
T810
T930
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PDF
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ERC01
Abstract: SV 04f
Text: ERC01 F (i •8 A ) _ * ± ' i ' m i 3? 4 * - v : Outline Drawings GENERAL USE RECTIFIER DIODE Features • High cu rre n t • S fffitt mtkTFi : Marking High reliability ■ f f liil : Applications A7 -3 - K: È C olor code : W hite • « S 3 fc
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OCR Scan
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ERC01
ERC01
SV 04f
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PDF
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FAJ 40
Abstract: aba diode 15X15 SC017-2 SC017-4 T460 r930 Diode FAJ ABA SURFACE MOUNT T3B diode
Text: S C O I 7 1 .OA : Outline Drawings GENERAL USE RECTIFIER DIODE * Features • 04 it ' J ESD-Proof I 12*“ m Surface m ount device i/jv : Marking High reliability •Applications Be General purpose rectifier applications □ □ » A utom obile use t>'J —h'7-ÿ
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OCR Scan
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-TeilS19^
I95t/R89)
FAJ 40
aba diode
15X15
SC017-2
SC017-4
T460
r930
Diode FAJ
ABA SURFACE MOUNT
T3B diode
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PDF
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F760
Abstract: GGT DIODE ERB32 F553 H150 T151 T810 T930 J3E diode
Text: ERB32 i .2A • * » ■ * » : Outline Drawings FAST RECOVERY DIODE : Features Super high speed switching H S tF I Marking • te V F A 5- 3 - V ; fi Low V F Color code : Orange • «fifS-ft Abridged type name ŒŒ? « Voltoge class D yh fc Lot No. High reliability
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OCR Scan
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ERB32
TKESTS30
aTi30S3
I95t/R89)
F760
GGT DIODE
F553
H150
T151
T810
T930
J3E diode
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PDF
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Untitled
Abstract: No abstract text available
Text: ERD31 1.5A : Outline Drawings FAST RECOVERY DIODE : Features • Ü /]v : Marking Large current High voltage by mesa design. DKEnfe: W • S fS H S tt f i ' j — K ?—ÿ High reliability 0 3 1 - 0 4 pi . . . . 1 -1 — : Applications • M H z* D-y !±e : 4=6]. T6;
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OCR Scan
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ERD31
5tvlZaTS30S3^
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PDF
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Untitled
Abstract: No abstract text available
Text: E R C 1 2 i . 2 A I Outline Drawings - M t M m m ? * * - k _ GEN ERAL USE R EC TIFIER DIODE -w¿3 5. — 28MIN — /Q8 20MIN — : Features • •0— Hi gh surge current • 'J V£ M $ A • ffifflfitt ■ S/jv i Marking Compact size, lightweight
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OCR Scan
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28MIN
20MIN
I95t/R89)
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PDF
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nfi7
Abstract: marking A95 SC201 SC201-4 SC201-8
Text: S C 2 0 1 o.5A : Outline Drawings FAST RECOVERY DIODE : Features • fm n to v iu k Surface mount device ISfcjv : Marking Cathode Marti High voltage by mesa design, Cod« • ftftfltli High reliability Tv» S C 20I-2 SC201-4 S C 201-8. Cod* a a QB GC : Applications
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OCR Scan
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SC201
SC20I-2
SC201-4
SC201-8
SC20K0
nfi7
marking A95
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PDF
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JT MARKING
Abstract: SC321 SC321-2 marking VM
Text: SC321 1.0A I J H B ' i i i : Outline Drawings m a m # 4 * r- v FAST RECOVERY DIODE I/Ü 'm r < SI ¿ZEH 04 135* ! !2 m ! ! : Features 12-“ ! 135ta* s-t-o? ! \%z7n : Marking S urface m ount device » is « » * H igh voltage by m esa d esign. • S fk 8 &
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OCR Scan
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SC321
SC321-2
f-150
JT MARKING
marking VM
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PDF
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SG10LC20USM
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode • i f 110 SG10LC20USM Package OUTLINE ' Unit • mm FTO-22QG Weight 1.54g Typ 200V 10A L5 Feature • Low Noise • trr=25ns • Full Molded • trr=25ns Main Use • 7. ' i ' y f y ' f W • • • • ffi.FA Switching Regulator
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OCR Scan
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SG10LC20USM
FTO-22QG
J533-1)
SG10LC20USM
CJ533-1
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