DIODE MARKING DMX Search Results

712 DIODE marking sot23

Contextual Info: TVS Diode Arrays SPA Diodes Diodes) General Purpose ESD Protection - SM712 SM712 Series 600W Asymmetrical TVS Diode Array RoHS Pb GREEN Description The SM712 TVS Diode Array is designed to protect RS-485 applications with asymmetrical working voltages (-7V to

Contextual Info: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

IRF7403 equivalent

Abstract: marking dmx diode c255
Contextual Info: PD -9.1562A International IOR Rectifier IRF9410 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses • Fully Avalanche Rated V dss ^D S o n = 30V

Contextual Info: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

diode marking dmx

Abstract: forward smps 12v
Contextual Info: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits

IRF4905 equivalent

Abstract: equivalent of irf4905 rs 307 rectifier equivalent of mosfet irf4905 marking dmx diode IRF4905
Contextual Info: PD - 9.1526A International IQR Rectifier IRFI4905 HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4,8mm • P-Channel • Fully Avalanche Rated V dss = -55V

Contextual Info: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits

irfb17n50l

Contextual Info: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits

Contextual Info: MA2418Y10000000 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2418Y1 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

Contextual Info: MA2417C10000000 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2417C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

Contextual Info: MA2518C10000000 Dual N-Ch 20V Fast Switching MOSFET s General Description Product Summery The MA2518C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

Contextual Info: MA2417Y10000000 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2417Y1 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

Contextual Info: N-Ch General Description MA2418C1000000 0 Fast Switching MOSFETs 20V Product Summery The MA2418C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

Contextual Info: MA2608N80000000 N-Ch and P-Ch Fast Switching MOSFE Ts General Description Product Summery The MA2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and

Contextual Info: PD-91902 International IO R Rectifier SMPS MosFET IR F 7 3 0 A HEXFET Power MOSFET Applications • • • Switch Mode Power Supply SM PS Uninterruptable Power Supply High speed pow er switching V dss 400V Rds(on) max Id 1.0i2 5.5A Benefits • Low Gate Charge Qg results in Simple

Contextual Info: MA2606C10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA2606C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and

Contextual Info: MA2415SN8000000 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2415SN8 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and

Contextual Info: MA2411SN8000000 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2411SN8 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and

Contextual Info: MB07N60F0000000 N-Ch 600V Fast Switching MOSFETs General Description Product Summery The MB07N60F is the highest performance N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA2403C10000000 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2403C1 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

Contextual Info: MA2605S10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA2605S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and

Contextual Info: MA2605V10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA2605V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and

Contextual Info: MA2604V10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2604V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and