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    DIODE MARKING CODE JV Search Results

    DIODE MARKING CODE JV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE JV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


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    PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    Q62702-A919

    Abstract: MARKING 54 "Pin Diode"
    Text: Silicon Low Leakage Diode BAS 116 Low-leakage applications ● Medium speed switching times ● Single diode ● Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit


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    PDF Q62702-A919 OT-23 Q62702-A919 MARKING 54 "Pin Diode"

    marking code js

    Abstract: BAS116 low-leakage silicon diode Q62702-A919 MARKING 54 "Pin Diode"
    Text: Silicon Low Leakage Diode BAS 116 Low-leakage applications ● Medium speed switching times ● Single diode ● 2 3 1 Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values


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    PDF Q62702-A919 OT-23 marking code js BAS116 low-leakage silicon diode Q62702-A919 MARKING 54 "Pin Diode"

    diode MARKING CODE jv

    Abstract: jv sod523
    Text: BAT54X Schottky Barrier Diode SOD-523 Features — Extremely fast switching speed. — Low forward voltage—0.35v Typ . Applications — High speed switching application. Dimensions in inches and (millimeters) Ordering Information Type No. Marking BAT54X Package Code


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    PDF BAT54X OD-523 BAT54X 100mA diode MARKING CODE jv jv sod523

    diode SMD MARKING CODE JV

    Abstract: smd marking code diode MARKING CODE jv smd marking codes list "switching Diode" JV SOT-23 marking code jv Marking Code SMD transistors smd diode marking code SMD MARKING CODE transistor
    Text: BAS116 LOW LEAKAGE SWITCHING DIODE Features • Plastic SMD package • Low leakage current • High switching speed 3 2 1 Marking Code: JV SOT-23 Plastic Package Application • Low leakage current applications in surface mounted circuits. Absolute Maximum Ratings Ta = 25 OC


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    PDF BAS116 OT-23 diode SMD MARKING CODE JV smd marking code diode MARKING CODE jv smd marking codes list "switching Diode" JV SOT-23 marking code jv Marking Code SMD transistors smd diode marking code SMD MARKING CODE transistor

    Untitled

    Abstract: No abstract text available
    Text: BAS116. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times BAS116 3 1 2 Type BAS116 Package SOT23 Configuration single Marking JVs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Diode reverse voltage


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    PDF BAS116. BAS116

    BAS116

    Abstract: BCW66
    Text: BAS116. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times BAS116 !  Type BAS116 Package SOT23 Configuration single Marking JVs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage


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    PDF BAS116. BAS116 BAS116 BCW66

    BAS116

    Abstract: BCW66
    Text: BAS116. Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS116 !  Type Package Configuration Marking BAS116 SOT23 single JVs Maximum Ratings at TA = 25°C, unless otherwise specified


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    PDF BAS116. BAS116 BAS116 BCW66

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Low Leakage Diode BAS 116 • Low-leakage applications • Medium speed switching times • Single diode Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 i-o 3 o1-0


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    PDF Q62702-A919 OT-23 023Sb05 235b05 015030b 535b05

    JVs sot23

    Abstract: BAS116
    Text: SIEM EN S Silicon Low Leakage Diode BAS 116 • Low-leakage applications • Medium speed switching times • Single diode Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 ° °- ^ 1-EHA07002


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    PDF Q62702-A919 OT-23 1--------EHA07002 JVs sot23 BAS116

    rs 434 065

    Abstract: 434 diode
    Text: SIEMENS BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Pin Configuration Package < Q62702-B631 II CM Ordering Code S3 I! Marking BBY 51 < Type


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    PDF Q62702-B631 OT-23 rs 434 065 434 diode

    ERB83-006

    Abstract: Collmer SC A349
    Text: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications V oltage ciass


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    PDF ERB83-006 Collmer SC A349

    A348

    Abstract: ERB83-006 jv marking a349
    Text: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications V oltage ciass


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    PDF ERB83-006 A348 jv marking a349

    T930

    Abstract: diode code yw marking code YW DIODE T460 ERC13 T151 Shl50
    Text: ERC13 1 .2A — K : Outl i ne Drawings GENERAL USE RECTIFIER DIODE •*(#•§ : Features • High surge current • 'Jv5 2 ,liM • A fflS H i Compact size, lightweight M it T F I Marking High reliability * 9 - 3 - H :# Color code: Blue \ General purpose rectifier applications


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    PDF ERC13 I95t/R89) Shl50 T930 diode code yw marking code YW DIODE T460 T151 Shl50

    A83-006

    Abstract: ERA83-006 T151 T460 T760 T930 marking code a83
    Text: ERA83-006 ia : Outline Drawings SCHOTTKY BARRIER DIODE Features • ftv F H S / jv : Marking low vf t r i ­ -a - K : fl Super high speed sw itching. color code : White •EH: ? 7 Voltage class High reliability by planer d e s ig n . D y b Nq in s e rtio n .


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    PDF I-125 l95t/R89 Shl50 A83-006 ERA83-006 T151 T460 T760 T930 marking code a83

    t930

    Abstract: ERA38 T151 T760
    Text: ERA38 o .5A K Ü S E S k • * » ■ * » : Outline Drawings FAST RECOVERY DIODE 3.0 : Features ■15/jv I Marking Super high speed switching • f f i 'W , 5mmki vT g mmA-siffi Ultra small package. * 7 - □ —K : È Color code : White Possible for 5mm pitch automatic insertion


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    PDF ERA38 I95t/R89) t930 T151 T760

    A-534

    Abstract: ERB06
    Text: ERB06HA : Outline Drawings FAST RECOVERY DIODE Mft-Bk • Features • t ) ? — TV £* |fg?jv : Marking M ost suitable fo r c o lo r T .V . dam per • w r tm z V M E .ir 'fa ' * 7 - 3 - K: ft High voltage by mesa design. Color code : Blue • B it CD High reliability


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    PDF ERB060A) ERB06 A-534

    Untitled

    Abstract: No abstract text available
    Text: ERB06HA : Outline Drawings FAST RECOVERY DIODE Mft-Bk •Features • t ) ? —TV£* |fg?jv : Marking M ost suitable fo r co lo r T .V . dam per • w r t m z V M E . ir 'f a ' * 7- 3- K : ft High voltage by mesa design. Color code : Blue • B it CD High reliability


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    PDF ERB06HA) E95ft--T I95t/R89)

    ERB06

    Abstract: No abstract text available
    Text: ERB06HA : Outline Drawings FAST RECOVERY DIODE M ft-Bk • Features • t ) ? — TV £* |fg?jv : Marking M ost suitable fo r c o lo r T .V . dam per • w r tm z V M E .ir 'fa ' * 7 - 3 - K: f t High voltage by mesa design. C o lo r code : B lu e • B it


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    PDF ERB060A) ERB06

    D360SC6M

    Abstract: L017
    Text: Schottky Barrier Diode Diode Module •¿m u OUTLINE Package I Module D360SC6M Unit : mm W eight 66R T yp> Isi Ö 51 3-M4 nui thickness = 3.2 60V 360A p, Feature •« V • High lo Rating-Module-PKG • Low V f • Small 9 je f • 8 jcÖ ^/JV c^L' 0 1 °


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    PDF D360SC6M CJ533-1 D360SC6M L017

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Twin Diode mwm DE10SC3L o u t lin e E-pack Package Unii I mm Weight 0.326« Typ 30 V 10A Feature • SMD • SMD 1 • (S V f = 0.45V • Low V f=0.45V • P r r s m 7’ K 5 > ì ' i ì ì ì • PnnsM Rating • /Jv3Ü*®3ÎES*


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    PDF DE10SC3L