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    DIODE MARKING CODE CG Search Results

    DIODE MARKING CODE CG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE CG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    Untitled

    Abstract: No abstract text available
    Text: Comchip Low Profile SMD Bridge Rectifiers SMD Diode Specialist CGRHD101-G Thru. CGRHD107-G Reverse Voltage: 50 to 1000 Volts Forward Current: 1.0 A RoHS Device Features MDLS - Surge overload ratings to 35 amperes peak. 0.063 1.60 0.055(1.40) 0.035 (0.90)


    Original     		PDF CGRHD101-G CGRHD107-G E321971 UL94-V0 CGRHD101-G CGRHD102-G CGRHD103-G CGRHD104-G CGRHD105-G CGRHD106-G

    Untitled

    Abstract: No abstract text available
    Text: Comchip Low Profile SMD Bridge Rectifiers SMD Diode Specialist CGRHD101-G Thru. CGRHD107-G Reverse Voltage: 50 to 1000 Volts Forward Current: 1.0 A RoHS Device Features MDLS - Surge overload ratings to 35 amperes peak. 0.063 1.60 0.055(1.40) 0.035 (0.90)


    Original     		PDF CGRHD101-G CGRHD107-G E321971 UL94-V0 CGRHD102-G CGRHD103-G CGRHD104-G CGRHD105-G CGRHD106-G

    smd marking code 8A

    Abstract: No abstract text available
    Text: Comchip General Purpose Rectifiers SMD Diode Specialist CGR860T-G Reverse Voltage: 600 V Forward Current: 8.0 A RoHS Device Features TO-220AC -Soft recovery characteristic. 0.108 2.75 -Low forward voltage. -Low recovery loss. 0.413(10.50) 0.374( 9.50) 0.153(3.90)


    Original     		PDF CGR860T-G O-220AC O-220AC, 50eristics QW-BG020 8FR060T smd marking code 8A

    CGR860T-G

    Abstract: General Purpose Rectifier
    Text: Comchip General Purpose Rectifiers SMD Diode Specialist CGR860T-G Reverse Voltage: 600 V Forward Current: 8.0 A RoHS Device Features TO-220AC -Soft recovery characteristic. 0.108 2.75 -Low forward voltage. -Low recovery loss. 0.413(10.50) 0.374( 9.50) 0.153(3.90)


    Original     		PDF CGR860T-G O-220AC O-220AC, QW-BG020 8FR060T CGR860T-G General Purpose Rectifier

    CW laser diode 808 nm

    Abstract: cg85 laser 850 SPL CG94 YB device marking Code CG94 Q62702-P1617 Q62702-P358 808 semiconductor SPLCG81
    Text: Laser Diode on Submount 1.0 W cw Class 4 Laser Product SPL CGxx (SFH 4804x2) Features • Efficient radiation source for cw and pulsed operation • Reliable InGa(Al)As strained quantum-well material • Single emitting area 200 µm x 1 µm • Small C-type copper submount for OEM designs


    Original     		PDF 4804x2) Q62702-P358 Q62702-P1617 CW laser diode 808 nm cg85 laser 850 SPL CG94 YB device marking Code CG94 Q62702-P1617 Q62702-P358 808 semiconductor SPLCG81

    STTH2003CG

    Abstract: STTH2003CT diode MARKING CODE CG
    Text: STTH2003CT/CG HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF AV A1 K 2 x 10 A VRRM 300 V VF (max) 1V trr (max) 35 ns A2 K FEATURES AND BENEFITS A1 COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ULTRAFAST, SOFT AND NOISE-FREE


    Original     		PDF STTH2003CT/CG O-220AB STTH2003CT STTH2003CG O-220AB STTH2003CG STTH2003CT diode MARKING CODE CG

    CG94

    Abstract: Q62702-P1617 Q62702-P358
    Text: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur


    Original     		PDF GSOY6600 CG94 Q62702-P1617 Q62702-P358

    Amplifier Micro-X "marking code" D

    Abstract: MMIC Amplifier Micro-X marking D micro-X Package MARKING CODE C Amplifier Micro-X c5 marking code marking d "micro x" CGY41 MMIC marking CODE c4 Micro-X marking D d marking "Micro-X"
    Text: CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier • HiRel Discrete and Microwave Semiconductor • Single-stage monolithic microwave IC MMIC-amplifier • Application range: 100 MHz to 3 GHz 4 3 1 2 • Gain: 9.5 dB typ. @ 1.8 GHz • Low noise figure: 2.7 dB typ. @ 1.8 GHz


    Original     		PDF CGY41 QS9000 Amplifier Micro-X "marking code" D MMIC Amplifier Micro-X marking D micro-X Package MARKING CODE C Amplifier Micro-X c5 marking code marking d "micro x" CGY41 MMIC marking CODE c4 Micro-X marking D d marking "Micro-X"

    Amplifier Micro-X "marking code" D

    Abstract: MARKING CODE l3 monolithic amplifier Amplifier Micro-X CGY41 MMIC Amplifier Micro-X marking 4 pin MMIC marking CODE c4 micro-X Package MARKING CODE C CGY41 H S-Band Power Amplifier intercept point MMIC Amplifier Micro-X marking g
    Text: CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier • HiRel Discrete and Microwave Semiconductor • Single-stage monolithic microwave IC MMIC-amplifier • Application range: 100 MHz to 3 GHz 4 3 1 2 • Gain: 9.5 dB typ. @ 1.8 GHz • Low noise figure: 2.7 dB typ. @ 1.8 GHz


    Original     		PDF CGY41 QS9000 Amplifier Micro-X "marking code" D MARKING CODE l3 monolithic amplifier Amplifier Micro-X CGY41 MMIC Amplifier Micro-X marking 4 pin MMIC marking CODE c4 micro-X Package MARKING CODE C CGY41 H S-Band Power Amplifier intercept point MMIC Amplifier Micro-X marking g

    SPL CG94

    Abstract: CW laser diode 808 nm 039 opto
    Text: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur


    Original     		PDF GSO06600 SPL CG94 CW laser diode 808 nm 039 opto

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    MOSFET IRFB 630

    Abstract: IRFB 630 93804B MOSFET IRFB 630 Datasheet transistor IRF 630 AN1001 IRF1010 IRFB41N15D IRFIB41N15D IRFS41N15D
    Text: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		PDF 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D AN1001) O-220AB O-220 O-262 IRFB41N15D MOSFET IRFB 630 IRFB 630 93804B MOSFET IRFB 630 Datasheet transistor IRF 630 AN1001 IRF1010 IRFIB41N15D IRFS41N15D

    IRFB 630

    Abstract: MOSFET IRFB 630 Datasheet MOSFET IRFB 630 transistor IRF 630 120V DC to DC Converter 10A TO-220 FULLPAK Package AN1001 IRF1010 IRFB41N15D IRFIB41N15D
    Text: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		PDF 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D AN1001) O-220AB O-220 O-262 IRFB41N15D IRFB 630 MOSFET IRFB 630 Datasheet MOSFET IRFB 630 transistor IRF 630 120V DC to DC Converter 10A TO-220 FULLPAK Package AN1001 IRF1010 IRFIB41N15D

    IRFB 630

    Abstract: No abstract text available
    Text: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		PDF 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D AN1001) O-220AB O-220 O-262 IRFB41N15D IRFB 630

    STTH

    Abstract: STTH2003CF STTH2003CG STTH2003CT
    Text: STTH2003CT/CG/CF  HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 300 V Tj (max) 175 °C VF (max) 1V trr (max) 35 ns A1 K K A2 A1 A2 D2PAK STTH2003CG FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE


    Original     		PDF STTH2003CT/CG/CF STTH2003CG O-220AB O-220AB STTH2003CT ISOWATT220AB STTH2003CF STTH STTH2003CF STTH2003CG STTH2003CT

    STTH2003CF

    Abstract: STTH2003CG STTH2003CG-TR STTH2003CT
    Text: STTH2003CT/CG/CF  HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 300 V Tj (max) 175 °C VF (max) 1V trr (max) 35 ns A1 K K A2 A2 A1 D2PAK STTH2003CG FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE


    Original     		PDF STTH2003CT/CG/CF STTH2003CG O-220AB, ISOWATT220AB O-220AB STTH2003CT ISOWATT220AB STTH2003CF STTH2003CF STTH2003CG STTH2003CG-TR STTH2003CT

    STTH2003CF

    Abstract: STTH2003CG STTH2003CG-TR STTH2003CR STTH2003CT diode MARKING CODE CG
    Text: STTH2003CT/CG/CF/CR  HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS A1 IF AV 2 x 10 A VRRM 300 V Tj (max) 175 °C VF (max) 1V trr (max) 35 ns K A2 K A2 FEATURES AND BENEFITS • ■ A2 K A1 A1 D2PAK STTH2003CG COMBINES HIGHEST RECOVERY AND


    Original     		PDF STTH2003CT/CG/CF/CR STTH2003CG STTH2003CR O-220AB, ISOWATT220AB, O-220AB STTH2003CT ISOWATT220Acs. STTH2003CF STTH2003CG STTH2003CG-TR STTH2003CR STTH2003CT diode MARKING CODE CG

    STTH2003CF

    Abstract: STTH2003CG STTH2003CG-TR STTH2003CR STTH2003CT diode MARKING CODE CG
    Text: STTH2003CT/CG/CF/CR HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS A1 IF AV 2 x 10 A VRRM 300 V Tj (max) 175 °C VF (max) 1V trr (max) 35 ns K A2 K A2 FEATURES AND BENEFITS • ■ A2 A1 COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE


    Original     		PDF STTH2003CT/CG/CF/CR STTH2003CG STTH2003CR O-220AB, ISOWATT220AB, O-220AB STTH2003CT ISOWATT220ABcs. STTH2003CF STTH2003CG STTH2003CG-TR STTH2003CR STTH2003CT diode MARKING CODE CG

    MARKING CODE YAG

    Abstract: cg85 CW laser diode 808 nm max and min mode 808 dx
    Text: SIEMENS Laser Diode on Submount 1.0 W cw Class 4 Laser Product SPL CGxx (SFH 4804x2) Features • Efficient radiation source for cw and pulsed operation • Reliable fnGa(AI)As strained quantum-well material • Single emitting area 200 yum x 1 jjm • Small C-type copper submount for OEM designs


    OCR Scan     		PDF 4804x2) Q62702-P358 Q62702-P1617 MARKING CODE YAG cg85 CW laser diode 808 nm max and min mode 808 dx

    Untitled

    Abstract: No abstract text available
    Text: STTH2003CT/CG/CF HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS I f a v 2 x 10 A V rrm 300 V Tj (max) 175 °C V f (max) 1V trr (max) 35 ns d 2p a k STTH2003CG FEATURES AND BENEFITS • COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE


    OCR Scan     		PDF STTH2003CT/CG/CF STTH2003CG T0-220AB, ISOWATT220AB STTH2003CT ISOWATT220AB STTH2003CF