philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
|
Original
|
PDF
|
1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
|
smd dual diode code A7
Abstract: smd code A7 smd diode marking A7 SOT-23 smd marking a7 smd dual diode code 68 A7 SMD sot23 Code sot-23 on semiconductor pdf marking a7 SMD a7 Transistor smd diode marking 77 smd marking A7 SOT-23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODE 3 CMBD226 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = CATHODE 3 = ANODE/ 2 1 CATHODE Marking Code A7 Ultra High-Speed Dual Switching Diodes in Series
|
Original
|
PDF
|
CMBD226
OT-23
C-120
CMBD226Rev300802E
smd dual diode code A7
smd code A7
smd diode marking A7 SOT-23
smd marking a7
smd dual diode code 68
A7 SMD sot23
Code sot-23 on semiconductor pdf marking a7
SMD a7 Transistor
smd diode marking 77
smd marking A7 SOT-23
|
IRF3710SPBF
Abstract: IRF3710 IRF3710L AN-994 IRL3103L IRF3710LPBF IRF3710S
Text: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A
|
Original
|
PDF
|
IRF3710SPbF
IRF3710LPbF
EIA-418.
IRF3710SPBF
IRF3710
IRF3710L
AN-994
IRL3103L
IRF3710LPBF
IRF3710S
|
DIODE marking S6 57
Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
Text: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
|
Original
|
PDF
|
GMM3x60-015X1
IF110
ID110
3x60-015X1
3x60-015X1
DIODE marking S6 57
DIODE marking S4 57
smd diode code s1 96
GMM3x60-015X1
DIODE marking S6 96
smd diode .S6 22
smd diode S4 96
smd diode g6
Control of Starter-generator
S4 DIODE
|
smd diode g6
Abstract: marking G3 IF110 GMM3x60-015X1
Text: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
|
Original
|
PDF
|
GMM3x60-015X1
IF110
ID110
3x60-015X1
3x60-015X1
smd diode g6
marking G3
IF110
GMM3x60-015X1
|
IRF3710L
Abstract: AN-994 IRF3710 IRF3710S IRF530S
Text: PD - 94201 IRF3710S IRF3710L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description
|
Original
|
PDF
|
IRF3710S
IRF3710L
IRF3710L
AN-994
IRF3710
IRF3710S
IRF530S
|
Untitled
Abstract: No abstract text available
Text: Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed
|
Original
|
PDF
|
DMN3112S
AEC-Q101
J-STD-020
MIL-STD-202,
|
Untitled
Abstract: No abstract text available
Text: S-5724 Series www.sii-ic.com LOW VOLTAGE OPERATION HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.2_00 Seiko Instruments Inc., 2012-2013 The S-5724 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates at a low voltage with a highsensitivity, a high-speed detection and low current consumption.
|
Original
|
PDF
|
S-5724
OT-23-3
|
unipolar transistor magnetic sensor
Abstract: 5713ANSL S-5713ANSL-M3T1S
Text: Rev.2.0_00 HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC S-5713A Series The S-5713A Series, developed by CMOS technology, is a unipolar detection type Hall IC with high-speed detection. The output voltage changes when the S-5713A Series detects the intensity level of flux density and a polarity. Using the
|
Original
|
PDF
|
S-5713A
OT-23-3
unipolar transistor magnetic sensor
5713ANSL
S-5713ANSL-M3T1S
|
Untitled
Abstract: No abstract text available
Text: S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH www.sii-ic.com Rev.2.4_00 Seiko Instruments Inc., 2011-2013 The S-5725 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with a high-sensitivity, a highspeed detection and low current consumption.
|
Original
|
PDF
|
S-5725
OT-23-3
|
S5723
Abstract: hall sensor 40 L
Text: Rev.2.0_00 HIGH-SPEED BIPOLAR DETECTION TYPE HALL IC S-5723A Series The S-5723A Series, developed by CMOS technology, is a bipolar detection type Hall IC with a high-sensitivity and high-speed detection. The output voltage changes when the S-5723A Series detects
|
Original
|
PDF
|
S-5723A
OT-23-3
S5723
hall sensor 40 L
|
AN-1005
Abstract: IRFL014 marking 31A marking CODE 001 pd 223 marking code TR
Text: PD - 95312A IRFL024ZPbF HEXFET Power MOSFET Features l l l l l l D Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS on = 57.5mΩ G ID = 5.1A
|
Original
|
PDF
|
5312A
IRFL024ZPbF
OT-223
EIA-418-1.
AN-1005
IRFL014
marking 31A
marking CODE 001
pd 223
marking code TR
|
AN-1005
Abstract: IRFL014
Text: PD - 95250 AUTOMOTIVE MOSFET IRFL024ZPbF HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 57.5mΩ G ID = 5.1A
|
Original
|
PDF
|
IRFL024ZPbF
EIA-418-1.
AN-1005
IRFL014
|
Untitled
Abstract: No abstract text available
Text: S-57A1 A Series www.sii-ic.com FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC Rev.1.1_00 Seiko Instruments Inc., 2013 The S-57A1 A Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with high temperature and
|
Original
|
PDF
|
S-57A1
S-57A1
OT-23-3
|
|
|
TSM2306
Abstract: TSM2306CX IDA57 n-channel mosfet transistor n-channel mosfet SOT-23
Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
|
Original
|
PDF
|
TSM2306
OT-23
TSM2306CX
TSM2306
IDA57
n-channel mosfet transistor
n-channel mosfet SOT-23
|
S-5711ANDL-I4T1G
Abstract: MP003-C-P-SD-1
Text: Rev.2.7_00 BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC S-5711A Series The S-5711A Series, developed by CMOS technology, is a Hall IC with a high-sensitivity and operates on a low current. The output voltage changes when the S-5711A Series detects the intensity
|
Original
|
PDF
|
S-5711A
OT23-3
S-5711ANDL-I4T1G
MP003-C-P-SD-1
|
Untitled
Abstract: No abstract text available
Text: S-57K1 A Series www.sii-ic.com FOR AUTOMOTIVE 125°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.2_00 Seiko Instruments Inc., 2013 The S-57K1 A Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with high temperature and
|
Original
|
PDF
|
S-57K1
OT-23-3
|
Untitled
Abstract: No abstract text available
Text: Rev.2.1_00 BIPOLAR DETECTION TYPE HALL IC WITH POWER-DOWN FUNCTION S-5721A/5722A Series The S-5721A/5722A Series, developed using CMOS technology, is a bipolar detection type Hall IC with a high-sensitivity that operates on a low current. The output voltage changes when the S-5721A/5722A Series detects the
|
Original
|
PDF
|
S-5721A/5722A
S5721A/5722A
|
CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power
|
Original
|
PDF
|
400F415
460F460
500F500
630F415
730F460
800F500
570F575
630F660
870F575
1000F660
CSG3001-18A04
thyristor BBC
thyristor aeg
BBC DSDI 35
WG15013B8C
WG9017
abb sami star
SM18CXC805
sm13cxc174
CSG2001-18A04
|
Untitled
Abstract: No abstract text available
Text: 32E D • fl23L.32Q 0Qlb57b T H S I P Silicon Tuning Diode ~ T - 0 'i ^ ^ .SIEMENS/ SPCL-. SEMICONDS For Hyperband TV/VTR tuners. Bd I BB 620 _:_ Cathode B B620 Type Ordering code Q62702-B403 Marking red/S Maximum ratings Reverse voltage
|
OCR Scan
|
PDF
|
fl23L
0Qlb57b
Q62702-B403
23b32Ã
T-07-19
capac150
|
st Diode marking EE
Abstract: No abstract text available
Text: ERC81-004 2.6A Ifl-JUN'Sc : Outline Drawings SCHOTTKY BARRIER DIODE Features I^Tjv : Marking L ow V F * 7 - 3 - K rta S u p e r h ig h sp ee d s w itc h in g . Color code : S ilver • T V — t - S iB l-iS B ftS tt H ig h reliability by p la n e r d e s ig n .
|
OCR Scan
|
PDF
|
ERC81-004
ERC81
st Diode marking EE
|
Diode marking CODE 1M
Abstract: Marking Code "1m" diode
Text: SIEMENS BBY 57-03W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation for VCO’s in mobile communications equipment
|
OCR Scan
|
PDF
|
7-03W
Q62702-B918
OD-323
Diode marking CODE 1M
Marking Code "1m" diode
|
Untitled
Abstract: No abstract text available
Text: BBY 57-05W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For control elements such as TCXOs and VCXOs
|
OCR Scan
|
PDF
|
7-05W
Q62702-B933
OT-323
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BBY 57-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation for VCO's in mobile communications equipment
|
OCR Scan
|
PDF
|
7-02W
Q62702-B915
SCD-80
|
