mcma
Abstract: c750g MCMA265P1600KA Y1-CU weight thyristor code
Text: MCMA 265 PD 1600 KB preliminary V RRM = I T RMS = I T(AV)M = Thyristor \ Diode Module Voltage range: 1200 - 1800 V Phase leg 3 Part number 1 5 4 1600 V 421 A 268 A 2 MCMA 265 PD 1600 KB Features / Advantages: Applications: Package: ● Thyristor for line frequency
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60747and
mcma
c750g
MCMA265P1600KA
Y1-CU weight
thyristor code
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MCMA265P1600KA
Abstract: Al2O3
Text: MCMA 265 P 1600 KA preliminary V RRM = I T RMS = I T(AV)M = Thyristor Module Voltage range: 1200 - 1800 V Phase leg Part number 3 6 7 1 5 4 1600 V 421 A 268 A 2 MCMA 265 P 1600 KA Features / Advantages: Applications: Package: ● Thyristor for line frequency
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60747and
MCMA265P1600KA
Al2O3
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MOSFET IRFB 630
Abstract: IRFB 630 93804B MOSFET IRFB 630 Datasheet transistor IRF 630 AN1001 IRF1010 IRFB41N15D IRFIB41N15D IRFS41N15D
Text: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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93804B
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
AN1001)
O-220AB
O-220
O-262
IRFB41N15D
MOSFET IRFB 630
IRFB 630
93804B
MOSFET IRFB 630 Datasheet
transistor IRF 630
AN1001
IRF1010
IRFIB41N15D
IRFS41N15D
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IRFB 630
Abstract: MOSFET IRFB 630 Datasheet MOSFET IRFB 630 transistor IRF 630 120V DC to DC Converter 10A TO-220 FULLPAK Package AN1001 IRF1010 IRFB41N15D IRFIB41N15D
Text: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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93804B
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
AN1001)
O-220AB
O-220
O-262
IRFB41N15D
IRFB 630
MOSFET IRFB 630 Datasheet
MOSFET IRFB 630
transistor IRF 630
120V DC to DC Converter 10A
TO-220 FULLPAK Package
AN1001
IRF1010
IRFIB41N15D
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IRF3706
Abstract: IRF3706L IRF3706S IRF530S IRL3103L ED marking code diode to262 pcb footprint
Text: PD - 93936C IRF3706 IRF3706S IRF3706L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS
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93936C
IRF3706
IRF3706S
IRF3706L
O-220AB
O-262
AN-994.
IRF3706
IRF3706L
IRF3706S
IRF530S
IRL3103L
ED marking code diode
to262 pcb footprint
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L3103L
Abstract: l3103 AN-994 IRF3706 IRF3706L IRF3706S Marking Code YE
Text: PD - 95385 SMPS MOSFET Applications High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free IRF3706PbF IRF3706SPbF IRF3706LPbF HEXFET Power MOSFET
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IRF3706PbF
IRF3706SPbF
IRF3706LPbF
O-220AB
IRF3706
IRF3706S
O-262
IRF3706L
IRF3706/S/LPbF
L3103L
l3103
AN-994
IRF3706
IRF3706L
IRF3706S
Marking Code YE
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L3103L
Abstract: to262 pcb footprint mosfet p-channel 04 mb l3103 pulse transformer 1039 AN-994 IRF3706 IRF3706L IRF3706S mosfet marking LY
Text: PD - 95385 SMPS MOSFET Applications High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free IRF3706PbF IRF3706SPbF IRF3706LPbF HEXFET Power MOSFET
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IRF3706PbF
IRF3706SPbF
IRF3706LPbF
O-220AB
IRF3706
IRF3706S
O-262
IRF3706L
IRF3706/S/LPbF
L3103L
to262 pcb footprint
mosfet p-channel 04 mb
l3103
pulse transformer 1039
AN-994
IRF3706
IRF3706L
IRF3706S
mosfet marking LY
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IR520NS
Abstract: IR520
Text: PD- 95592 IRL520NSPbF IRL520NLPbF Lead-Free www.irf.com 1 07/21/04 IR520NS/LPbF 2 www.irf.com IRL520NS/LPbF www.irf.com 3 IR520NS/LPbF 4 www.irf.com IRL520NS/LPbF www.irf.com 5 IR520NS/LPbF 6 www.irf.com IRL520NS/LPbF Peak Diode Recovery dv/dt Test Circuit
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IRL520NSPbF
IRL520NLPbF
IR520NS/LPbF
IRL520NS/LPbF
Wavef957)
EIA-418.
IR520NS
IR520
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irf 44 n
Abstract: IRF Power MOSFET code marking "thermal via" PCB D2PAK IRF MOSFET driver 9936 B TO-220AB transistor package IRF1010 TO-262 MOSFET 2F 1 marking 9936
Text: PD - 93936B IRF3706 IRF3706S IRF3706L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS
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93936B
IRF3706
IRF3706S
IRF3706L
O-220AB
O-262
IRF3706/3706S/3706L
irf 44 n
IRF Power MOSFET code marking
"thermal via" PCB D2PAK
IRF MOSFET driver
9936 B
TO-220AB transistor package
IRF1010
TO-262 MOSFET
2F 1 marking
9936
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P-Channel MOSFET 800v
Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30SPbF
IRFBE30LPbF
IRFBE30S
O-262
IRFBE30L
Dissi957)
EIA-418.
P-Channel MOSFET 800v
800v irf
IRF P CHANNEL MOSFET
IRF P CHANNEL MOSFET 100v
IRFBE30L
IRFBE30S
IRL3103L
P-Channel mosfet 400v
P Channel Power MOSFET IRF
ED marking code diode
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Untitled
Abstract: No abstract text available
Text: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive
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IRGS4620DPbF
IRGB4620DPbF
IRGP4620D
IRGP4620DPbF
O-247AC
O-220AC
IRGP4620D-EPbF
O-247AD
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L3103L
Abstract: l3103 3103L
Text: PD- 95593 IRL530NSPbF IRL530NLPbF Lead-Free www.irf.com 1 07/21/04 IRL530NS/LPbF 2 www.irf.com IRL530NS/LPbF www.irf.com 3 IRL530NS/LPbF 4 www.irf.com IRL530NS/LPbF www.irf.com 5 IRL530NS/LPbF 6 www.irf.com IRL530NS/LPbF Peak Diode Recovery dv/dt Test Circuit
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IRL530NSPbF
IRL530NLPbF
IRL530NS/LPbF
EIA-418.
L3103L
l3103
3103L
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Equivalent IRL3713
Abstract: IRL3713 transistor IRF 630 IRF1010 IRF530S IRL3103L IRL3713L IRL3713S GS Logo Marking 30A TP1500
Text: PD - 94184D IRL3713 IRL3713S IRL3713L SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested HEXFET Power MOSFET
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94184D
IRL3713
IRL3713S
IRL3713L
O-220AB
O-262
AN-994.
Equivalent IRL3713
IRL3713
transistor IRF 630
IRF1010
IRF530S
IRL3103L
IRL3713L
IRL3713S
GS Logo Marking 30A
TP1500
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Untitled
Abstract: No abstract text available
Text: IRF3704Z IRF3704ZS IRF3704ZL D2Pak IRF3704ZS TO-220AB IRF3704Z TO-262 IRF3704ZL Applications High Frequency Synchronous Buck Converters for Computer Processor Power l Benefits l Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
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IRF3704Z
IRF3704ZS
IRF3704ZL
IRF3704ZS
O-220AB
IRF3704Z
O-262
O-220AB
AN-994.
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Untitled
Abstract: No abstract text available
Text: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.
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94925B
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
O-220AB
O-262
I20AB
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d 1830
Abstract: No abstract text available
Text: PD - 94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.
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94925C
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
O-220AB
O-262
I20AB
d 1830
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FSL3206
Abstract: No abstract text available
Text: IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G Benefits l Improved Gate, Avalanche and Dynamic
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IRFB3206PbF
IRFS3206PbF
IRFSL3206PbF
O-220AB
FSL3206
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3711S
Abstract: IRF3711L IRF3711 IRF3711S IRF1010 IRF530S IRL3103L
Text: PD- 94062C IRF3711 IRF3711S IRF3711L SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck
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94062C
IRF3711
IRF3711S
IRF3711L
O-220AB
O-262
O-220AB
3711S
IRF3711L
IRF3711
IRF3711S
IRF1010
IRF530S
IRL3103L
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FB4410Z
Abstract: FB4410
Text: IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
O-220AB
O-262
IRFSL4410Z
FB4410Z
FB4410
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irfb3306
Abstract: FS3306
Text: IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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IRFB3306PbF
IRFS3306PbF
IRFSL3306PbF
O-220AB
irfb3306
FS3306
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SMD Schottky Barrier Diode 0402 D1
Abstract: SMD Schottky Barrier Diode 0402 smd marking BA SMD diode MARKING CODE 03
Text: SMD Schottky Barrier Diode CDBQR0230L I o = 200 mA V R = 30 Volts RoHS Device Features 0402/SOD-923F -Low forward voltage. 0.041 1.05 0.037(0.95) -Designed for mounting on small surface. -Extremely thin / leadless package. 0.026(0.65) 0.022(0.55) -Majority carrier conduction.
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CDBQR0230L
0402/SOD-923F
0402/SOD-923F
MIL-STD-750
OD-923F)
QW-A1118
CDBQR0230L
SMD Schottky Barrier Diode 0402 D1
SMD Schottky Barrier Diode 0402
smd marking BA
SMD diode MARKING CODE 03
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IRF1010
Abstract: IRF634N IRF634NL IRF634NS
Text: PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF634NPbF IRF634NSPbF IRF634NLPbF l l HEXFET Power MOSFET
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IRF634NPbF
IRF634NSPbF
IRF634NLPbF
O-220
O-220A
AN-994.
IRF634N)
IRF634NS
IRF634NL)
IRF1010
IRF634N
IRF634NL
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBER0230L-HF RoHS Device Io = 200 mA V R = 30 Volts 0503(1308) Features 0.053(1.35) 0.045(1.15) Halogen free. Low forward voltage. 0.034(0.85) 0.026(0.65) Designed for mounting on small surface. Extremely thin / leadless package.
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CDBER0230L-HF
MIL-STD-750
ER/0503
QW-G1046
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR0130L-HF RoHS Device Io = 100 mA V R = 30 Volts 0402(1005) Features 0.041(1.05) 0.037(0.95) Halogen free. Low forward voltage. 0.026(0.65) 0.022(0.55) Designed for mounting on small surface. Extremely thin / leadless package.
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CDBQR0130L-HF
MIL-STD-750
QR/0402
QW-G1098
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